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TLV62090
SLVSBB9F – MARCH 2012 – REVISED JANUARY 2017
TLV62090 3A High Efficiency Synchronous Step-Down Converter with DCS-Control™
1 Features
3 Description
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The TLV62090 device is a high frequency
synchronous step-down converter optimized for small
solution size, high efficiency and suitable for battery
powered applications. To maximize efficiency, the
converter operates in pulse width modulation (PWM)
mode with a nominal switching frequency of 1.4 MHz
and it automatically enters power save mode
operation at light load currents. When used in
distributed power supplies and point of load
regulation, the device allows voltage tracking to other
voltage rails and tolerates output capacitors ranging
from 10 µF up to 150 µF and beyond. Using the
DCS-Control topology, the device achieves excellent
load transient performance and accurate output
voltage regulation.
1
•
•
2.5 V to 5.5 V Input Voltage Range
DCS-Control™
Up To 98% Efficiency
Power Save Mode
20 µA Operating Quiescent Current
100% Duty Cycle for Lowest Dropout
1.4 MHz Typical Switching Frequency
0.8 V to VIN Adjustable Output Voltage
Output Discharge Function
Adjustable Softstart
Hiccup Short Circuit Protection
Output Voltage Tracking
Pin-to-Pin Compatible with TPS62090, TLV62095
and TPS62095
For Improved Feature Set, See TPS62090
Create a Custom Design using the TLV62090 with
the WEBENCH® Power Designer
2 Applications
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Distributed Power Supplies
Notebook, Netbook Computers
Hard Disk Drives (HDD)
Solid State Drives (SSD)
Processor Supply
Battery Powered Applications
The output voltage start-up ramp is controlled by the
softstart pin, which allows operation as either a
standalone power supply or in tracking configurations.
Power sequencing is also possible by configuring the
enable (EN) and power good (PG) pins. In power
save mode, the device operates with typically 20-µA
quiescent current. Power save mode is entered
automatically and seamlessly, maintaining high
efficiency over the entire load current range.
The device is available in a 3 mm x 3 mm 16-pin
VQFN (RGT) package.
Device Information(1)
PART NUMBER
PACKAGE
TLV62090
VQFN (16)
BODY SIZE (NOM)
3.00 mm x 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
spacer
spacer
Typical Application Schematic
TLV62090
12
11
C1
22mF
10
3
C5
10nF
13
7
8
PVIN
SW
PVIN
SW
AVIN
VOS
1
100
Vout
1.8V/3A
R1
200k
2
95
C2
22mF
90
16
DEF
FB 5
EN
PG 4
CP
SS
CN
AGND 6
R2
160k
R3
500k
Power Good
9
C4
10nF
Efficiency (%)
Vin
2.5V to 5.5V
Efficiency vs Output Current
L1
1mH
85
80
75
70
65
PGND PGND
14
60
15
Copyright © 2017, Texas Instruments Incorporated
55
50
100m
VOUT = 3.3 V
L = 1 µH
f = 1.4 MHz
1
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
10
100
I load (mA)
1k
10k
G002
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV62090
SLVSBB9F – MARCH 2012 – REVISED JANUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
7.1
7.2
7.3
7.4
Overview ................................................................... 9
Functional Block Diagram ......................................... 9
Feature Description................................................. 10
Device Functional Modes........................................ 13
8
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application .................................................. 14
9 Power Supply Recommendations...................... 20
10 Layout................................................................... 21
10.1 Layout Guideline ................................................... 21
10.2 Layout Example .................................................... 21
11 Device and Documentation Support ................. 22
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Device Support......................................................
Documentation Support .......................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
23
12 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (January 2016) to Revision F
Page
•
Added Feature: Pin-to-Pin Compatible with TPS62090, TLV62095 and TPS62095 ............................................................. 1
•
Added Feature: For Improved Feature Set, See TPS62090 .................................................................................................. 1
•
Added WEBENCH information to the Features, Detailed Design Procedure, and Device Support sections ........................ 1
•
Added SW (AC, less than 10 ns) to the Absolute Maximum Rating table ............................................................................. 5
•
Added additional frequency curves to the Typical Characteristics section ............................................................................ 7
•
Added Table 1, Power Good Pin Logic ................................................................................................................................ 12
Changes from Revision D (September 2015) to Revision E
Page
•
Changed title From: 3A High Efficient Synchronous To: 3A High Efficiency Synchronous .................................................. 1
•
Changed Features From: 95% Converter Efficiency To: Up To 98% Efficiency.................................................................... 1
•
Changed Features From: Two Level Short Circuit Protection To: Hiccup Short Circuit Protection ....................................... 1
•
Changed text in the Description From: the device operates at typically 20 µA quiescent current. To: the device
operates with typically 20-µA quiescent current. .................................................................................................................... 1
•
Deleted Note from the pinout drawing: The exposed Thermal Pad is connected to AGND. ................................................. 4
•
Changed the Pin Functions table I/O column......................................................................................................................... 4
•
Changed the Pin Functions table Description column for pins FB, EN, and Thermal Pad ................................................... 4
•
Added pins CN and CP to the Voltage range in Absolute Maximum Ratings (1) ................................................................... 5
•
Deleted "Continuous total power dissipation" from Absolute Maximum Ratings (1) ................................................................ 5
•
Deleted Note 1 from Recommended Operating Conditions .................................................................................................. 5
•
Added EN = Low to the Description of RPD in Electrical Characteristics table....................................................................... 6
•
Deleted IPG from the Electrical Characteristics table .............................................................................................................. 6
•
Changed LIMF to ILIMF for High side FET switch current limit in the Electrical Characteristics table ....................................... 6
•
Changed Vs to VOUT for Output voltage range in the Electrical Characteristics table............................................................. 6
•
Changed Figure 1 through Figure 2 ...................................................................................................................................... 7
•
Added Note 1 to the Functional Block Diagram .................................................................................................................... 9
2
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•
Changed "Softstart (SS) and Output Capacitor during Startup" To: Softstart (SS) and Hiccup Current Limit During
Startup ................................................................................................................................................................................. 10
•
Changed text From: "start-up especially for larger output capacitors >22 µF." To: "start-up especially for larger
output capacitors." in Softstart (SS) and Hiccup Current Limit During Startup ................................................................... 10
•
Rewrite the description in Voltage Tracking (SS) ................................................................................................................ 10
•
Deleted text "in PFM mode and with a minimum quiescent current while" from Power Save Mode Operation ................. 13
•
Changed VOUT(max) to VOUT in Equation 4 ............................................................................................................................. 13
•
Deleted text "VOUT(max) = nominal output voltage plus maximum output voltage tolerance" from Equation 4 ...................... 13
•
Added Note to Application and Implementation .................................................................................................................. 14
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Added 10 nF to the description of C4, C5 in Table 3 .......................................................................................................... 15
•
Updated the Isat/DCR (max) column of Table 5 .................................................................................................................. 16
•
Deleted text" The inductor needs to be rated for a saturation current as high as the typical switch current limit, of 4.6
A or according to Equation 5 and Equation 6." from Inductor Selection ............................................................................. 16
•
Changed Equation 5 and Equation 6 .................................................................................................................................. 16
•
Changed the Input and Output Capacitor Selection section ............................................................................................... 16
•
Changed Figure 19 .............................................................................................................................................................. 18
•
Changed Figure 20 .............................................................................................................................................................. 18
Changes from Revision C (May 2014) to Revision D
Page
•
Moved Storage temperature From: ESD Ratings To: Absolute Maximum Ratings (1) ............................................................ 5
•
Changed table From: Handling Ratings To: ESD Ratings .................................................................................................... 5
•
Added PWM mode, TJ = 25°C to Feedback voltage accuracy section of the Electrical Characteristics table ..................... 6
Changes from Revision B (April 2012) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1
•
Deleted text: "TPS62090 adjustable output version" from the Feedback voltage accuracy section of the Electrical
Characteristics table ............................................................................................................................................................... 6
•
Changed Figure 1 From: Resistance (Ω) To: Resistance (mΩ) ............................................................................................. 7
•
Added Application Curves to the Application Information section ........................................................................................ 18
•
Deleted Typical applications from the Application Information section for: 1.8 V Adjustable Version, 1.5 V Adjustable
Version, 1.2 V Adjustable Version and 1.05 V Adjustable Version ...................................................................................... 20
Changes from Revision A (March 2012) to Revision B
•
Page
Changed the Input voltage range MAX value From: 6V To 5.5V in Electrical Characteristics .............................................. 6
Changes from Original (March 2012) to Revision A
•
Page
Changed Vin From: 2.5V to 6V To: 2.5V to 5.5V in Figure 11 ............................................................................................. 14
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SLVSBB9F – MARCH 2012 – REVISED JANUARY 2017
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5 Pin Configuration and Functions
PG
4
EN
14
13
12
11
Exposed
Thermal Pad
10
5
6
7
8
CN
3
PGND
DEF
15
CP
2
PGND
SW
16
AGND
1
FB
SW
VOS
RGT Package
16-Pin VQFN
Top View
9
PVIN
PVIN
AVIN
SS
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
SW
1, 2
I/O
DEF
3
I
This pin is used for internal logic and needs to be pulled high. This pin should not be left floating.
PG
4
O
Power good open drain output. This pin is high impedance if the output voltage is within regulation. This pin is
pulled low if the output is below its nominal value. The pull up resistor can not be connected to any voltage
higher than the input voltage of the device.
FB
5
I
Feedback pin of the device. Connect a resistor divider to set the output voltage.
AGND
6
CP
7
I/O
Internal charge pump flying capacitor. Connect a 10 nF capacitor between CP and CN.
CN
8
I/O
Internal charge pump flying capacitor. Connect a 10 nF capacitor between CP and CN.
SS
9
I
Softstart control pin. A capacitor is connected to this pin and sets the softstart time. Leaving this pin floating
sets the minimum start-up time.
AVIN
10
I
Bias supply input voltage pin.
PVIN
11,12
I
Power supply input voltage pin.
13
I
Device enable. To enable the device this pin needs to be pulled high. Pulling this pin low disables the device.
This pin has a pull down resistor of typically 400 kΩ, which is active when EN is low.
EN
PGND
VOS
4
Analog ground.
14,15
16
Exposed Thermal
Pad
Switch pin of the power stage.
Power ground connection.
I
Output voltage sense pin. This pin needs to be connected to the output voltage.
The exposed thermal pad is connected to AGND. It must be soldered for mechanical reliability.
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6 Specifications
6.1 Absolute Maximum Ratings (1)
VALUE
MIN
Voltage range (2)
Power Good sink current
UNIT
MAX
PVIN, AVIN, FB, SS, EN, DEF, VOS
– 0.3
7
SW (DC), PG
– 0.3
VIN + 0.3
SW (AC, less than 10 ns) (3)
– 3.0
10
CN, CP
– 0.3
VIN + 7
PG
V
1
mA
Operating junction temperature range, TJ
– 40
150
°C
Storage temperature, Tstg
– 65
150
°C
(1)
(2)
(3)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
While switching
6.2 ESD Ratings
MAX
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
TYP
MAX
UNIT
VIN
Input voltage range VIN
2.5
5.5
V
TA
Operating ambient temperature
–40
85
°C
TJ
Operating junction temperature
–40
125
°C
6.4 Thermal Information
THERMAL METRIC (1)
TLV62090
VQFN (16 PINS)
RθJA
Junction-to-ambient thermal resistance
47
RθJC(top)
Junction-to-case (top) thermal resistance
60
RθJB
Junction-to-board thermal resistance
20
ψJT
Junction-to-top characterization parameter
1.5
ψJB
Junction-to-board characterization parameter
20
RθJC(bot)
Junction-to-case (bottom) thermal resistance
5.3
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
VIN = 3.6V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VIN
Input voltage range
IQIN
Quiescent current
Not switching, FB = FB +5%, into PVIN and AVIN
20
Isd
Shutdown current
Into PVIN and AVIN
0.6
5
Undervoltage lockout threshold
VIN falling
2.2
2.3
VUVLO
2.5
2.1
Undervoltage lockout hysteresis
Thermal shutdown
TSD
Temperature rising
Thermal shutdown hysteresis
5.5
V
µA
µA
V
200
mV
150
ºC
20
ºC
0.65
V
CONTROL SIGNAL EN
VH
High level input voltage
VIN = 2.5 V to 5.5 V
VL
Low level input voltage
VIN = 2.5 V to 5.5 V
Ilkg
Input leakage current
EN = GND or VIN
RPD
Pull down resistance
EN = Low
1
0.60
0.4
V
10
100
nA
400
kΩ
SOFTSTART
ISS
Softstart current
6.3
7.5
8.7
µA
Output voltage rising
93%
95%
97%
Output voltage falling
88%
90%
92%
0.4
V
100
nA
POWER GOOD
VTH_PG
Power good threshold
VL
Low level voltage
I(sink) = 1 mA
Ilkg
Leakage current
VPG = 3.6 V
10
High side FET on-resistance
ISW = 500 mA
50
mΩ
Low side FET on-resistance
ISW = 500 mA
40
mΩ
POWER SWITCH
RDS(on)
ILIMF
High side FET switch current
limit
fs
Switching frequency
3.7
IOUT = 3 A
4.6
5.5
1.4
A
MHz
OUTPUT
VOUT
Output voltage range
Rod
Output discharge resistor
EN = GND, VOUT = 1.8 V
0.8
VFB
Feedback regulation voltage
PWM Mode
IFB
(1)
(2)
6
Feedback voltage accuracy
VIN ≥ VOUT + 1 V
IOUT = 1 A, PWM mode
V
-1%
+1%
-1.4%
+1.4%
IOUT = 0 mA, VOUT ≥ 1.2 V, PFM mode
(1)
-1.4%
+3%
IOUT = 0 mA, VOUT < 1.2 V, PFM mode
(2)
-1.4%
+3.7%
10
V
Ω
0.8
IOUT = 1 A, PWM mode, TJ = 25°C
VFB
VIN
200
Feedback input bias current
VFB = 0.8 V
Line regulation
VOUT = 1.8 V, PWM operation
0.016
100
%/V
nA
Load regulation
VOUT = 1.8 V, PWM operation
0.04
%/A
Conditions: L = 1 µH, COUT = 22 µF. For more information, see the Power Save Mode Operation section of this data sheet.
For output voltages < 1.2 V, use a 2 x 22 µF output capacitance to achieve +3% output voltage accuracy in PFM mode.
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6.6 Typical Characteristics
25
70
TA = -40°C
TA = 25°C
TA = 85°C
20
50
Current (PA)
Resistance (m:)
60
40
30
15
10
20
5
TA = 85qC
TA = 25qC
TA = -40qC
10
0
2.5
3
3.5
4
4.5
Input Voltage [V]
5
0
2.5
5.5
3
3.5
D001
VOUT = 1.8 V
Figure 1. High Side FET On-Resistance vs Input Voltage
5
5.5
D004
L = 1 µH
2000
Switching Frequency (kHz)
Switching Frequency (kHz)
4.5
Figure 2. Quiescent Current vs Input Voltage
2000
1500
1000
500
VIN = 2.8 V
VIN = 3.3 V
VIN = 5.0 V
0
0.0
0.5
1.0
VOUT = 1.8 V
1.5
Load (A)
2.0
2.5
1500
1000
500
0
2.5
3.0
3.0
3.5
D033
L = 1 µH
VOUT = 1.8 V
Figure 3. Switching Frequency vs Load Current
4.0
4.5
Input Voltage (V)
5.0
5.5
D040
L = 1 µH
IOUT = 1 A
Figure 4. Switching Frequency vs Input Voltage
2000
Switching Frequency (kHz)
2000
Switching Frequency (kHz)
4
Voltage (V)
1500
1000
500
VIN = 2.8 V
VIN = 3.3 V
VIN = 5.0 V
0
0.0
0.5
VOUT = 1.0 V
1.0
1.5
Load (A)
2.0
2.5
3.0
1500
1000
500
0
2.5
3.0
D030
L = 1 µH
VOUT = 1.0 V
Figure 5. Switching Frequency vs Load Current
3.5
4.0
4.5
Input Voltage (V)
L = 1 µH
5.0
5.5
D039
IOUT = 1 A
Figure 6. Switching Frequency vs Input Voltage
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Typical Characteristics (continued)
2000
Switching Frequency (kHz)
Switching Frequency (kHz)
2000
1500
1000
500
1500
1000
500
VIN = 5.0 V
0
0.0
0.5
VOUT = 3.3 V
1.0
1.5
Load (A)
2.0
2.5
3.0
4.0
D036
L = 1 µH
VOUT = 3.3 V
Figure 7. Switching Frequency vs Load Current
8
0
3.5
4.5
Input Voltage (V)
L = 1 µH
5.0
5.5
D041
IOUT = 1 A
Figure 8. Switching Frequency vs Input Voltage
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7 Detailed Description
7.1 Overview
The TLV62090 synchronous switched mode converter is based on DCS-Control™ (direct control with seamless
transition into power save mode). This is an advanced regulation topology that combines the advantages of
hysteretic and voltage-mode control.
The DCS-Control™ topology operates in pulse width modulation (PWM) mode for medium to heavy load
conditions and in power save mode at light load currents. In PWM mode, the converter operates with its nominal
switching frequency of 1.4 MHz having a controlled frequency variation over the input voltage range. As the load
current decreases, the converter enters power save mode, reducing the switching frequency and minimizing the
current consumption to achieve high efficiency over the entire load current range. DCS-Control™ supports both
operation modes (PWM and PFM) using a single building block having a seamless transition from PWM to power
save mode without effects on the output voltage. The TLV62090 offers excellent DC voltage regulation and load
transient regulation, combined with low output voltage ripple, minimizing interference with RF circuits.
7.2 Functional Block Diagram
PG
CP
PVIN
CN
Charge Pump
for
Gate driver
VFB
Hiccup
current limit
#32 counter
VREF
High Side
Current
Sense
AVIN
Bandgap
Undervoltage
Lockout
Thermal shutdown
EN
PVIN
M1
400kW (1)
SW
MOSFET Driver
Anti Shoot Through
Converter Control
Logic
AGND
SW
DEF
M2
PGND
PGND
Comparator
ramp
Timer
ton
Direct Control
and
Compensation
VOS
Error Amplifier
FB
Vref
0.8V
Vin
DCS - Control™
200Ω
Iss
Voltage clamp
Vref
SS
÷1.56
EN
Output voltage
discharge
logic
M3
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(1)
The resistor is disconnected when EN is high.
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7.3 Feature Description
7.3.1 Enable (EN)
The device is enabled by setting the EN pin to a logic high. Accordingly, shutdown mode is forced if the EN pin is
pulled low with a shutdown current of typically 0.6 µA. In shutdown mode, the internal power switches as well as
the entire control circuitry are turned off. An internal resistor of 200 Ω discharges the output through the VOS pin
smoothly. An internal pull-down resistor of 400 kΩ is connected to the EN pin when the EN pin is low. The pulldown resistor is disconnected when the EN pin is high.
7.3.2 Softstart (SS) and Hiccup Current Limit During Startup
To minimize inrush current during start up, the device has an adjustable softstart depending on the capacitor
value connected to the SS pin. The device charges the softstart capacitor with a constant current of typically 7.5
µA. The feedback voltage follows this voltage with a fraction of 1.56 until the internal reference voltage of 0.8 V is
reached. Softstart operation is completed once the voltage at the softstart capacitor has reached typically 1.25 V.
The softstart time is calculated using Equation 1. The larger the softstart capacitor, the longer the softstart time.
The relation between softstart voltage and feedback voltage is estimated using Equation 2.
1.25V
tSS = CSS x
7.5μA
(1)
VFB =
VSS
1.56
(2)
During startup, the switch current limit is reduced to 1/3 (~1.5 A) of its typical current limit of 4.6 A. Once the
output voltage exceeds typically 0.6 V, the current limit is released to its nominal value. The device provides a
reduced load current of ~1.5 A when the output voltage is below typically 0.6 V. Due to this, a small or no
softstart time may trigger the short circuit protection during startup especially for larger output capacitors. This is
avoided by using a larger softstart capacitance to extend the softstart time. See Short Circuit Protection (HiccupMode) for details of the reduced current limit during startup. Leaving the softstart pin floating sets the minimum
startup time (around 50 µs).
7.3.3 Voltage Tracking (SS)
The SS pin is externally driven by another voltage source to achieve output voltage tracking. The application
circuit is shown in Figure 9. The internal reference voltage follows the voltage at the SS pin with a fraction of 1.56
until the internal reference voltage of 0.8 V is reached. The device achieves ratiometric or coincidental
(simultaneous) output tracking, as shown in Figure 10.
VOUT1
VOUT2
R3
R1
SS
FB
R4
R2
GND
GND
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Figure 9. Output Voltage Tracking
10
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Feature Description (continued)
Voltage
Voltage
1+
VOUT1
VOUT1
VOUT2
VOUT2
R3 æ
R1 ö
1
< ç1 +
÷´
R 4 è R 2 ø 1.56
1+
R3 æ
R1 ö
1
= ç1 +
÷´
R 4 è R 2 ø 1.56
t
t
a) Ratiometric Tracking
b) Coincidental Tracking
Figure 10. Voltage Tracking Options
The R2 value should be set properly to achieve accurate voltage tracking by taking 7.5 μA soft startup current
into account. 1 kΩ or smaller is a sufficient value for R2.
For decreasing the SS pin voltage, the device doesn't sink current from the output when the device is in power
save mode. So the resulting decreases of the output voltage may be slower than the SS pin voltage if the load is
light. When driving the SS pin with an external voltage, do not exceed the voltage rating of the SS pin which is
7 V.
7.3.4 Short Circuit Protection (Hiccup-Mode)
The device is protected against hard short circuits to GND and over-current events. This is implemented by a two
level short circuit protection. During startup and when the output is shorted to GND, the switch current limit is
reduced to 1/3 of its typical current limit of 4.6 A. Once the output voltage exceeds typically 0.6 V, the current
limit is released to its nominal value. The full current limit is implemented as a hiccup current limit. Once the
internal current limit is triggered 32 times, the device stops switching and starts a new startup sequence after a
typical delay time of 66 µS. The device goes through these cycles until the high current condition is released.
7.3.5 Output Discharge Function
To make sure the device starts up under defined conditions, the output gets discharged via the VOS pin with a
typical discharge resistor of 200 Ω whenever the device shuts down. This happens when the device is disabled
or if thermal shutdown, undervoltage lockout or short circuit hiccup-mode are triggered.
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Feature Description (continued)
7.3.6 Power Good Output (PG)
The power good output is low when the output voltage is below its nominal value. The power good becomes high
impedance once the output is within 5% of regulation. The PG pin is an open drain output and is specified to
typically sink up to 1 mA. This output requires a pull-up resistor to be monitored properly. The pull-up resistor
cannot be connected to any voltage higher than the input voltage of the device. The PG output is low when the
device is disabled, in thermal shutdown or UVLO. The PG output can be left floating if unused. Table 1 shows
the PG pin logic.
Table 1. Power Good Pin Logic
PG Logic Status
Device State
Enable (EN=High)
High Impedance
VFB ≥ VTH_PG
Low
√
VFB ≤ VTH_PG
√
√
Shutdown (EN=Low)
UVLO
0.7 V < VIN ≤ VUVLO
Thermal Shutdown
TJ > TSD
Power Supply Removal
VIN ≤ 0.7 V
√
√
√
7.3.7 Undervoltage Lockout (UVLO)
To avoid mis-operation of the device at low input voltages, an undervoltage lockout is included. UVLO shuts
down the device at input voltages lower than typically 2.2 V with a 200 mV hysteresis.
7.3.8 Thermal Shutdown
The device goes into thermal shutdown once the junction temperature exceeds typically 150°C with a 20°C
hysteresis.
7.3.9 Charge Pump (CP, CN)
The CP and CN pins must attach to an external 10 nF capacitor to complete a charge pump for the gate driver.
This capacitor must be rated for the input voltage. It is not recommended to connect any other circuits to the CP
or CN pins.
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7.4 Device Functional Modes
7.4.1 PWM Operation
At medium to heavy load currents, the device operates with pulse width modulation (PWM) at a nominal
switching frequency of 1.4 MHz. As the load current decreases, the converter enters power save mode operation
reducing its switching frequency. The device enters power save mode at the boundary to discontinuous
conduction mode (DCM).
7.4.2 Power Save Mode Operation
As the load current decreases, the converter enters power save mode operation. During power save mode, the
converter operates with reduced switching frequency maintaining high efficiency. Power save mode is based on
a fixed on-time architecture following Equation 3.
V
OUT × 360ns × 2
V
IN
2×I
OUT
f =
æ
ö V -V
V
V
OUT ÷ x IN
OUT
ton2 ç 1 + IN
ç
÷
V
L
OUT
è
ø
ton =
(3)
In power save mode, the output voltage rises slightly above the nominal output voltage in PWM mode, as shown
in Figure 15. This effect is reduced by increasing the output capacitance or the inductor value. This effect is also
reduced by programming the output voltage of the TLV62090 lower than the target value. As an example, if the
target output voltage is 3.3 V, then the TLV62090 can be programmed to 3.3 V - 0.8%. As a result the output
voltage accuracy is now -2.2% to +2.2% instead of -1.4% to 3%. The output voltage accuracy in pulse frequency
modulation (PFM) operation is reflected in the electrical specification table and given for a 22-µF output
capacitor.
7.4.3 Low Dropout Operation (100% Duty Cycle)
The device offers a low input to output voltage difference by entering 100% duty cycle mode. In this mode, the
high-side MOSFET switch is constantly turned on. This is particularly useful in battery powered applications to
achieve longest operation time by taking full advantage of the whole battery voltage range. The minimum input
voltage where the output voltage falls below its nominal regulation value is given by:
VIN(min) = VOUT + IOUT x ( RDS(on) + RL )
(4)
Where
RDS(on) = High side FET on-resistance
RL = DC resistance of the inductor
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TLV62090 is a 3-A high frequency synchronous step-down converter optimized for small solution size, high
efficiency and suitable for battery powered applications.
8.2 Typical Application
TLV62090
Vin
2.5V to 5.5V
12
11
C1
22mF
10
3
C5
10nF
13
7
8
PVIN
SW
PVIN
SW
AVIN
VOS
1
L1
1mH
Vout
1.8V/3A
R1
200k
2
C2
22mF
16
DEF
FB 5
EN
PG 4
CP
SS
CN
AGND 6
R2
160k
R3
500k
Power Good
9
C4
10nF
PGND PGND
14
15
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Figure 11. TLV62090 Typical Application Circuit
8.2.1 Design Requirements
The design guideline provides a component selection to operate the device within the recommended operating
conditions.
For the typical application example, the following input parameters are used. See Table 2.
Table 2. Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUES
Input Voltage Range
2.5 V to 5.5 V
Output Voltage
1.8 V
Transient Response
±5% VOUT
Input Voltage Ripple
400 mV
Output Voltage Ripple
30 mV
Output current rating
3A
Operating frequency
1.4 MHz
Table 3 shows the list of components for the Application Characteristic Curves.
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Table 3. List of Components
REFERENCE
DESCRIPTION
MANUFACTURER
TLV62090
High efficiency step-down converter
Texas Instruments
L1
Inductor: 1 µH
Coilcraft XFL4020-102
C1
Ceramic capacitor: 22 µF
(6.3V, X5R, 0805)
C2
Ceramic capacitor: 22 µF
(6.3V, X5R, 0805)
C4, C5
Ceramic capacitor, 10 nF
Standard
R1, R2, R3
Resistor
Standard
8.2.2 Detailed Design Procedure
8.2.2.1 Custom Design with WEBENCH® Tools
Click here to create a custom design using the TLV62090 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT, and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. The WEBENCH Power Designer provides you with a customized schematic along with a list of materials with
real time pricing and component availability.
4. In most cases, you will also be able to:
– Run electrical simulations to see important waveforms and circuit performance
– Run thermal simulations to understand the thermal performance of your board
– Export your customized schematic and layout into popular CAD formats
– Print PDF reports for the design, and share your design with colleagues
5. Get more information about WEBENCH tools at www.ti.com/WEBENCH.
The first step is the selection of the output filter components. To simplify this process, Table 4 outlines possible
inductor and capacitor value combinations.
Table 4. Output Filter Selection
INDUCTOR VALUE [µH] (1)
OUTPUT CAPACITOR VALUE [µF] (2)
10
0.47
1.0
√
2.2
√
22
47
100
150
√
√
√
√
(3)
√
√
√
√
√
√
√
√
3.3
(1)
(2)
(3)
Inductor tolerance and current de-rating is anticipated. The effective inductance can vary by +20% and
–30%.
Capacitance tolerance and bias voltage de-rating is anticipated. The effective capacitance can vary by
+20% and –50%.
Typical application configuration. Other check mark indicates alternative filter combinations
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8.2.2.2 Inductor Selection
The inductor selection is affected by several parameters like inductor ripple current, output voltage ripple,
transition point into power save mode, and efficiency. See Table 5 for typical inductors.
Table 5. Inductor Selection
INDUCTOR VALUE
COMPONENT SUPPLIER
SIZE (LxWxH mm)
Isat/DCR (max)
0.6 µH
Coilcraft XAL4012-601
4 x 4 x 2.1
7.9A/10.5 mΩ
1 µH
Coilcraft XAL4020-102
4 x 4 x 2.1
6.7A/14.6 mΩ
1 µH
Coilcraft XFL4020-102
4 x 4 x 2.1
4.5 A/11.9 mΩ
0.47 µH
TOKO DFE252012CR47
2.5 x 2 x 1.2
3.7A/39 mΩ
1 µH
TOKO DFE252012C1R0
2.5 x 2 x 1.2
3.0A/59 mΩ
0.68 µH
TOKO DFE322512CR68
3.2 x 2.5 x 1.2
3.5A/35 mΩ
1 µH
TOKO DFE322512C1R0
3.2 x 2.5 x 1.2
3.1A/45 mΩ
In addition, the inductor has to be rated for the appropriate saturation current and DC resistance (DCR).
Equation 5 and Equation 6 calculate the maximum inductor current under static load conditions. The formula
takes the converter efficiency into account. The converter efficiency can be taken from the data sheet graphs or
80% can be used as a conservative approach. The calculation must be done for the maximum input voltage
where the peak switch current is highest.
D IL
=
æ
VO U T
VO U T
x çç 1 h
V IN x h
è
f x L
ö
÷÷
ø
DI
I
=I
+ L
PEAK
OUT
2
(5)
(6)
where
ƒ = Converter switching frequency (typically 1.4 MHz)
L = Selected inductor value
η = Estimated converter efficiency (use the number from the efficiency curves or 0.80 as a conservative
assumption)
Calculating the maximum inductor current using the actual operating conditions gives the minimum saturation
current. A margin of about 20% should be added to cover for load transients during operation.
8.2.2.3
Input and Output Capacitor Selection
For best output and input voltage filtering, low ESR (X5R or X7R) ceramic capacitors are recommended. The
input capacitor minimizes input voltage ripple, suppresses input voltage spikes and provides a stable system rail
for the device. A 22-µF or larger input capacitor is recommended. The output capacitor value can range from 10
µF up to 150 µF and beyond. Load transient testing and measuring the bode plot are good ways to verify stability
with larger capacitor values.
The recommended typical output capacitor value is 22 µF (nominal) and can vary over a wide range as outline in
the output filter selection table. For output voltages above 1.8 V, noise can cause duty cycle jitter. This does not
degrade device performance. Using an output capacitor of 2 x 22 µF (nominal) for output voltages >1.8 V avoids
duty cycle jitter.
Ceramic capacitor have a DC-Bias effect, which has a strong influence on the final effective capacitance. Choose
the right capacitor carefully in combination with considering its package size and voltage rating.
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8.2.2.4 Setting the Output Voltage
The output voltage is set by an external resistor divider according to the following equations:
R1 ö
R1 ö
æ
æ
VOUT = VFB ´ ç 1 +
÷ = 0.8 V ´ ç 1 + R2 ÷
R2
è
ø
è
ø
(7)
V
0.8 V
R2 = FB =
» 160 kΩ
IFB
5 μA
(8)
æV
ö
æV
ö
R1 = R2 ´ ç OUT - 1÷ = R2 ´ ç OUT - 1÷
è 0.8V
ø
è VFB
ø
(9)
When sizing R2, in order to achieve low quiescent current and acceptable noise sensitivity, use a minimum of 5
µA for the feedback current IFB. Larger currents through R2 improve noise sensitivity and output voltage
accuracy. A feed forward capacitor is not required for proper operation.
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100
100
95
95
90
90
85
85
Efficiency (%)
Efficiency (%)
8.2.3 Application Curves
80
75
70
65
60
55
80
75
70
65
VOUT = 3.3 V
L = 1 µH
f = 1.4 MHz
50
100m
1
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
10
100
I load (mA)
1k
55
50
100m
10k
1.83
95
1.825
Output Voltage (V)
Efficiency (%)
90
85
80
75
70
VOUT = 1.05 V
L = 1.0 µH
f = 1.4 MHz
55
50
100m
1
10
100
I load (mA)
VIN = 2.7 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
1k
1.82
VOUT = 1.8 V
L = 1 µH
f = 1.4 MHz
G003
VIN = 5.0 V
VIN = 4.2 V
VIN = 3.7 V
1.81
1.8
1.795
10k
1.79
100m
1
G005
10
100
I load (mA)
1k
10k
G007
Figure 15. Output Voltage vs Load Current
Vsw
2 V/div
Vo
20 mV/div
Vo
20 mV/div
Iinductor
1 A/div
Iinductor
500 mA/div
G012
f = 1.4 MHz
VIN = 3.7 V
L = 1 µH
Figure 16. PWM Operation
18
10k
1.805
Vsw
2 V/div
400 ns/div
VO = 1.8 V/3 A
1k
1.815
Figure 14. Efficiency vs Load Current
VIN = 3.7 V
L = 1 µH
10
100
I load (mA)
Figure 13. Efficiency vs Load Current
100
60
1
G002
Figure 12. Efficiency vs Load Current
65
VIN = 2.7 V
VIN = 3.7 V
VIN = 4.2 V
VIN = 5 V
VOUT = 1.8 V
L = 1 µH
f = 1.4 MHz
60
1 µs/div
VO = 1.8 V/100 mA
G013
f = 1.4 MHz
Figure 17. PFM Operation
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Vo
20 mV/div
VEN
2 V/div
Vo
1 V/div
Io
1 A/div
Iinductor
500 mA/div
Iinductor
500 mA/div
VIN = 3.7 V
L = 1 µH
200 µs/div
VO = 1.8 V
G015
f = 1.4 MHz
VIN = 3.7 V
L = 1 µH
Figure 18. Load Sweep, 0 to 1.5 A
400 µs/div
VO = 1.8 V/600 mA
CSS = 10 nF
G017
Figure 19. Start-Up
Vo
1 V/div
VEN
2 V/div
Vo
1 V/div
Io
2 A/div
Iinductor
500 mA/div
Iinductor
1 A/div
VIN = 3.7 V
L = 1 µH
2 ms/div
VO = 1.8 V/No Load
G018
f = 1.4 MHz
VIN = 3.7 V
L = 1 µH
Figure 20. Shutdown
40 µs/div
VO = 1.8 V
G019
f = 1.4 MHz
Figure 21. Hiccup Short Circuit Protection
Vo
1 V/div
Vo
50 mV/div
Io
2 A/div
Iinductor
1 A/div
Iinductor
1 A/div
VIN = 3.7 V
L = 1 µH
400 µs/div
VO = 1.8 V
G020
f = 1.4 MHz
VIN = 3.7 V
f = 1.4 MHz
Figure 22. Hiccup Short Circuit Protection
40 µs/div
VO = 1.8 V
L = 1 µH
G022
0.3 A to 2.5 A
CO = 22 µF
Figure 23. Load Transient Response
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Vo
50 mV/div
Io
1 V/div
Iinductor
500 A/div
VIN = 3.7 V
f = 1.4 MHz
100 µs/div
VO = 1.8 V
L = 1 µH
G023
20 mA to 1 A
CO = 22 µF
Figure 24. Load Transient Response
9 Power Supply Recommendations
The TLV62090 device has no special requirements for its input power supply. The input power supply's output
current needs to be rated according to the supply voltage, output voltage and output current of the TLV62090.
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10 Layout
10.1 Layout Guideline
•
•
•
•
•
It is recommended to place the input capacitor as close as possible to the IC pins PVIN and PGND.
The VOS connection is noise sensitive and needs to be routed short and direct to the output terminal of the
inductor.
The exposed thermal pad of the package, analog ground (pin 6) and power ground (pin 14, 15) should have a
single point connection at the exposed thermal pad of the package. This minimizes switch node jitter.
The charge pump capacitor connected to CP and CN should be placed close to the IC to minimize coupling of
switching waveforms into other traces and circuits.
See Figure 25 and the evaluation module User Guide (SLVU670) for an example of component placement,
routing and thermal design.
R2x1
R1
AGND
R2
L1x1
10.2 Layout Example
L1
VOUT
C2
SW
PG
SW
DEF
C5
EN
C4
PVIN
CN
SS
PGND
AVIN
VOS
PGND
CP
PVIN
FB
AGND
VIN
GND
C1
Figure 25. Recommended Layout
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Custom Design with WEBENCH® Tools
Click here to create a custom design using the TLV62090 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT, and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. The WEBENCH Power Designer provides you with a customized schematic along with a list of materials with
real time pricing and component availability.
4. In most cases, you will also be able to:
– Run electrical simulations to see important waveforms and circuit performance
– Run thermal simulations to understand the thermal performance of your board
– Export your customized schematic and layout into popular CAD formats
– Print PDF reports for the design, and share your design with colleagues
5. Get more information about WEBENCH tools at www.ti.com/WEBENCH.
11.2 Documentation Support
11.2.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised documen
11.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
is a trademark of ~ Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OUTLINE
RGT0016C
VQFN - 1 mm max height
SCALE 3.600
PLASTIC QUAD FLATPACK - NO LEAD
3.1
2.9
A
B
PIN 1 INDEX AREA
3.1
2.9
C
1 MAX
SEATING PLANE
0.05
0.00
0.08
1.68 0.07
(0.2) TYP
5
12X 0.5
8
EXPOSED
THERMAL PAD
4
9
4X
1.5
SYMM
1
12
16X
PIN 1 ID
(OPTIONAL)
13
16
0.1
0.05
SYMM
16X
0.30
0.18
C A B
0.5
0.3
4222419/B 11/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
RGT0016C
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.68)
SYMM
13
16
16X (0.6)
1
12
16X (0.24)
SYMM
(0.58)
TYP
12X (0.5)
(2.8)
9
4
( 0.2) TYP
VIA
5
(R0.05)
ALL PAD CORNERS
8
(0.58) TYP
(2.8)
LAND PATTERN EXAMPLE
SCALE:20X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4222419/B 11/2016
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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Product Folder Links: TLV62090
25
TLV62090
SLVSBB9F – MARCH 2012 – REVISED JANUARY 2017
www.ti.com
EXAMPLE STENCIL DESIGN
RGT0016C
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.55)
16
13
16X (0.6)
1
12
16X (0.24)
17
SYMM
(2.8)
12X (0.5)
9
4
METAL
ALL AROUND
5
SYMM
8
(R0.05) TYP
(2.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 17:
85% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:25X
4222419/B 11/2016
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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Copyright © 2012–2017, Texas Instruments Incorporated
Product Folder Links: TLV62090
PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TLV62090RGTR
ACTIVE
VQFN
RGT
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SBV
TLV62090RGTT
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
SBV
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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