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TMP821
SLDS152A – JANUARY 2008 – REVISED MAY 2015
TMP821 Two-Phase Half-Wave Motor Predriver
1 Features
3 Description
•
The TMP821 device is a two-phase half-wave motor
predriver that is suited for fan motors, which has
winding in push-pull configuration. It uses differential
hall effect sensors for commutation signals for two of
the switches in power circuit. The device has a very
small pin count, making it very simple to use.
1
•
•
•
Built-In Lock Detection and Rotational Speed
Sensing Mechanisms
Compact 8-Pin Package Reduces Number of
External Components Required
Automatic Restart When Motor Lock Is Undone
Hall Amplifier Inputs Have Hysteresis
Device Information(1)
PART NUMBER
2 Applications
TMP821
Small Server Fans
PACKAGE
SOIC (8)
BODY SIZE (NOM)
4.90 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
VCC 1
8 A2
Regulator
Hall
Amp
H+ 2
+
7 A1
Logic
–
AL 3
H– 4
6 LD
Lock Detect/
Auto Restart
+
–
5 GND
+
–
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TMP821
SLDS152A – JANUARY 2008 – REVISED MAY 2015
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
5
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 6
7.1 Overview ................................................................... 6
7.2 Functional Block Diagram ......................................... 6
7.3 Feature Description................................................... 7
7.4 Device Functional Modes.......................................... 8
8
Application and Implementation .......................... 9
8.1 Application Information.............................................. 9
8.2 Typical Application .................................................... 9
9 Power Supply Recommendations...................... 11
10 Layout................................................................... 11
10.1 Layout Guidelines ................................................. 11
10.2 Layout Example .................................................... 11
10.3 Power Dissipation ................................................. 11
11 Device and Documentation Support ................. 13
11.1
11.2
11.3
11.4
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
13
13
13
13
12 Mechanical, Packaging, and Orderable
Information ........................................................... 13
4 Revision History
Changes from Original (January 2008) to Revision A
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
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SLDS152A – JANUARY 2008 – REVISED MAY 2015
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
VCC
1
8
A2
H+
2
7
A1
AL
3
6
LD
H–
4
5
GND
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
A1
7
O
Driver output
A2
8
O
Driver output
AL
3
O
Speed indication
GND
5
Power GND
H+
2
I
Positive Hall input
H–
4
I
Negative Hall input
LD
6
I
Timing capacitor
VCC
1
Power Supply
Ground
Power input (4 V to 28 V)
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SLDS152A – JANUARY 2008 – REVISED MAY 2015
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MAX
UNIT
VCC
Supply voltage
MIN
30
V
VAL
Output voltage (AL)
30
V
IOUT
Continuous output current (A1, A2)
70
mA
IAL
Continuous output current (AL)
8
mA
TJ
Operating junction temperature
–40
125
°C
Tstg
Storage temperature
–55
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
±1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage
4
28
UNIT
VH
Hall amplifier input voltage
1
VCC – 0.5
V
TA
Operating free-air temperature
–40
100
°C
V
6.4 Thermal Information
TMP821
THERMAL METRIC
(1)
D (SOIC)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
RθJB
(2)
97
°C/W
Junction-to-case (top) thermal resistance
117.8
°C/W
Junction-to-board thermal resistance
71.5
°C/W
ψJT
Junction-to-top characterization parameter
58.3
°C/W
ψJB
Junction-to-board characterization parameter
23.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
57.8
°C/W
(1)
(2)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Package thermal impedance is calculated in accordance with JESD 51-7.
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6.5 Electrical Characteristics
VCC = 12 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
±3
MAX
UNIT
±15
mV
VHYS
Hall amplifier input voltage hysteresis
VAL
Lock alarm signal low-level output voltage
AL
IAL = 5 mA
IAL
Lock alarm signal low-level output current
AL
VAL = 2 V
8
ILDC
Lock Detection capacitor charge current
LD
VLD = 1.5 V
2
3.45
5.25
μA
ILDD
Lock Detection capacitor discharge current
LD
VLD = 1.5 V
0.35
0.8
1.45
μA
rCD
Lock Detection capacitor charge and
discharge current ratio
LD
rCD = ILDC/ILDD
3
4.5
8
VLDCL
Lock Detection capacitor clamp voltage
LD
2.2
2.6
3
V
VLDCP
Lock Detection capacitor comparator voltage
LD
0.4
0.6
0.8
V
V7H
High-level output voltage
A1
IOH = –10 mA
10
10.5
V
V8H
High-level output voltage
A2
IOH = –10 mA
10
10.5
V
ICC
Supply current
0.5
Output off
V
mA
3.2
5
mA
20
12
15
11.5
A1/A2 Output Voltage – V
IAL – Current – mA
6.6 Typical Characteristics
10
5
0
0
2
4
6
8 10 12 14 16
VAL – Supply Voltage – V
18
20
Figure 1. AL Current Consumption vs AL Supply Voltage
(VCC = 12 V)
11
10.5
10
0
20
40
60
A1/A2 Output Current – mA
80
Figure 2. A1/A2 Output Voltage vs A1/A2 Output Current
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7 Detailed Description
7.1 Overview
The TMP821 device is a two phase half wave motor predriver suited for small fan applications. The two switches
are controlled from the logic generated from differential hall sensors connected to the device. The drive logic
operates in push-pull configuration. The TMP821 device is a very small package with minimum external
components required, making the design very simple and easy. Speed information is available on a pin. The lock
detect feature is also part of the features provided by the device whose timing is configured by connecting an
external capacitor.
7.2 Functional Block Diagram
VCC 1
8 A2
Regulator
Hall
Amp
H+ 2
+
7 A1
Logic
–
AL 3
H– 4
6 LD
Lock Detect/
Auto Restart
+
–
5 GND
+
–
6
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7.3 Feature Description
7.3.1 Lock Detection
The TMP821 device comes with the built-in lock detect feature. If it's not able to rotate the rotor for a specific
amount of time, the Lock Detection disables the drive and retries after some time. The timings are dependant on
the capacitor connected at LD Pin.
When a motor lock is detected, the TMP821 device automatically shuts down its output current. When the motor
lock is removed, the TMP821 device automatically restarts. Motor lock is detected when the Hall signal stops
switching, as shown in Figure 3.
Motor Motor lock
locked detected
Motor lock
cleared
Return to
normal operation
Hall Input
On
Motor Output
Off
Clamp voltage
LD
Comparator voltage
tON
tOFF
AL
Figure 3. Motor Lock Diagram
tON and tOFF are determined by the capacitor connected to LD:
tON = (CLD × (VLD_CLAMP – VLD_COMP) / ILD_CHARGE (seconds)
tOFF = (CLD × (VLD_CLAMP – VLD_COMP) / ILD_DISCHARGE (seconds)
(1)
where
•
•
•
•
•
CLD = capacitance of the external capacitor on LD
VLD_CLAMP = LD clamp voltage
VLD_COMP = LD comparator voltage
ILD_CHARGE = LD charge current
ILD_DISCHARGE = LD discharge current
(2)
Power
AL
A few hundred milliseconds
Figure 4. Power-on to AL Delay
7.3.2 Speed Sensing
The TMP821 device gives the speed information on the pin AL. This pin may remain high for few hundred
milliseconds at the start-up. Once the motor attains some speed, the frequency can be observed at this pin.
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Feature Description (continued)
NOTE
After power is supplied to the device, the Lock Detection pin (AL) may remain high for a
few hundred milliseconds (see Figure 4).
7.4 Device Functional Modes
7.4.1 Lock Detection Pin
When rotor is locked, the drive is enabled until the voltage at LD pin reaches a higher threshold. Once the
voltage reaches a higher threshold, the drive is disabled until the LD capacitor discharges to a lower threshold.
7.4.2 Run
If the motor is unlocked and hall sensor inputs and drive signals are connected properly, the motor starts
spinning.
8
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TMP821 device needs very few external components for the features described in Feature Description. The
device needs a 1-µF or more capacitor connected at VCC. The Lock Detection capacitor decides the hiccup
time.
8.2 Typical Application
VCC
8
7
6
5
A2
A1
LD
GND
VCC
H+
AL
H–
1
2
3
4
Hall
Figure 5. Typical Application Circuit
8.2.1 Design Requirements
For this design example, use the following parameters:
• Test setup input voltage: 12-V DC source
• VCC capacitor: 1 µF or more
• H Bridge top side: P-channel FETs
• H Bridge bottom side: N-channel FETs
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Typical Application (continued)
8.2.2 Detailed Design Procedure
Pins:
• Connect hall sensor differential inputs to IN+ and IN–.
• Connect LD to Lock Detection capacitor.
• Connect drive outputs to the gates of the H bridge switches.
• Pull up on FG.
Power Supply:
• Make sure the power supply is set with sufficient current limit at the decided motor voltage (12 V and 1 A are
shown in Application Curves).
Build the circuit with recommended connections at the pins.
Test the motor circuit with hardware connected to it.
8.2.3 Application Curves
Figure 6. Start-up at 12 V (Soft Start)
Figure 7. Motor Outputs and DC Current
Figure 8. Lock Detection and Retries
10
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9 Power Supply Recommendations
Connect a bulk capacitor of 1 µF or greater to VDD and GND. The maximum voltage applied must be less than
30 V.
10 Layout
10.1 Layout Guidelines
A bulk capacitor at the VDD and GND LD capacitor can be connected near the device as shown in Figure 9.
10.2 Layout Example
>1uF
A2
VDD
A1
H+
TMP821
AL
LD
H-
GND
Figure 9. Recommended Layout Example
10.3 Power Dissipation
Figure 10 shows allowable power dissipation versus ambient temperature.
PD – Power Dissipation – W
1
0.8
0.6
0.4
0.2
0
0
75
25
50
TA – Temperature – °C
100
Figure 10. Power Dissipation
Use Equation 3 to calculate total power consumption.
Ptotal = PC1 + PC2 + PC3
where
•
•
•
•
•
•
PC1 = circuit power dissipation
PC1 = VCC × ICC
PC2 = output power dissipation
PC2 = (VCC – VOH) × IO
VOH = A1 and A2 high-level voltage
PC2 can be reduced by increasing the external output transistor's hFE rank to reduce the IO consumption.
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Power Dissipation (continued)
•
•
12
PC3 = AL power dissipation
PC3 = VAL_LOW × IAL
(3)
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11 Device and Documentation Support
11.1 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TMP821DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 100
TMP821
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of