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TPD2S017DBVR

TPD2S017DBVR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOT23-6

  • 描述:

    ESD抑制器/TVS二极管 VRWM=5V VBR(min)=11V SOT23-6

  • 数据手册
  • 价格&库存
TPD2S017DBVR 数据手册
Product Folder Sample & Buy Support & Community Tools & Software Technical Documents Reference Design TPD2S017 SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 TPD2S017 2-Channel Ultra-Low Clamp Voltage ESD Solution With Series-Resistor Isolation 1 Features 3 Description • The TPD2S017 is a two channel electrostatic discharge (ESD) protection device. This protection product offers two-stage ESD transient voltage suppression (TVS) diodes in each line with a typically 1-Ω series resistor isolation. This architecture allows the device to clamp at a very low voltage during system level ESD strikes. 1 • • • • • • Ultra-Low Clamping Voltage Ensures the Protection of Ultra-Low Voltage Core Chipset During ESD Events IEC 61000-4-2 ESD Protection Matching of Series Resistor (R = 1 Ω) of ±8 mΩ (Typical) Differential Channel Input Capacitance Matching of 0.02 pF (Typical) High-Speed Data Rate and EMI Filter Action at High Frequencies (–3 dB Bandwidth, ≉3 GHz) Available in 6-Pin Small-Outline Transistor [SOT23 (DBV)] Package Easy Straight-Through Routing Packages 2 Applications • • • • • Hi-Speed USBs IEEE 1394 Interfaces Low-Voltage Differential Signaling (LVDS) Mobile Display Digital Interfaces (MDDI) and Mobile Industry Processor Interfaces (MIPI) HS Signals The TPD2S017 conforms to the IEC61000-4-2 ESD protection standard. Due to the series resistor component, the TPD2S017 provides a controlled filter roll-off for even greater spurious EMI suppression and signal integrity. The monolithic silicon technology allows good matching of the component values, including the clamp capacitances and the series resistors between the differential signal pairs. The tight matching of the line capacitance and series resistors ensures that the differential signal distortion due to added ESD clamp remains minimal, and it also allows the part to operate at high-speed differential data rate (in excess of 1.5 Gbps). The DBV package offers a flow-through pin mapping for ease of board layout. Typical applications of this ESD protection device are circuit protection for USB data lines, IEEE 1394 Interfaces, LVDS, MDDI/MIPI and HS signals. Device Information(1) PART NUMBER TPD2S017 PACKAGE SOT-23 (6) BODY SIZE (NOM) 2.90 mm × 1.60 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Application Schematic Power Supply Vcc (optional) TPD2S017 CH1 Ch1_In Ch1_Out Connector (source of ESD) ESD sensitive device CH2 Ch2_In Ch2_Out 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPD2S017 SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 6.7 3 3 3 4 4 4 5 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Dissipation Ratings ................................................... Typical Characteristics .............................................. Detailed Description .............................................. 6 7.1 Overview ................................................................... 6 7.2 Functional Block Diagram ......................................... 6 7.3 Feature Description................................................... 6 7.4 Device Functional Modes.......................................... 6 8 Application and Implementation .......................... 7 8.1 Application Information.............................................. 7 8.2 Typical Application ................................................... 7 9 Power Supply Recommendations........................ 9 10 Layout..................................................................... 9 10.1 Layout Guidelines ................................................... 9 10.2 Layout Example ...................................................... 9 11 Device and Documentation Support ................. 10 11.1 11.2 11.3 11.4 Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 10 10 10 10 12 Mechanical, Packaging, and Orderable Information ........................................................... 10 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (July 2015) to Revision B • Added ƒ = 10 MHz to the test condition of IO capacitance in the Electrical Characteristics table ....................................... 4 Changes from Original (September 2009) to Revision A • 2 Page Page Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 TPD2S017 www.ti.com SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 5 Pin Configuration and Functions DBV Package 6-Pin SOT-23 Top View Ch1_Out 1 6 Ch2_Out GND 2 5 VCC Ch1_In 3 4 Ch2_In Pin Functions PIN NAME NO. Ch1_In 3 Ch2_In 4 Ch1_Out 1 Ch2_Out 6 GND VCC I/O DESCRIPTION I High-speed ESD clamp input O High-speed ESD clamp output 2 — Ground 5 — Optional power 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX 0 5 V Operating temperature –40 85 °C Storage temperature –85 125 °C VIO IO voltage TA Tstg (1) UNIT Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 V(ESD) (1) (2) Electrostatic discharge (1) UNIT ±15000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±1500 IEC 61000-4-2 Contact Discharge ±11000 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN Operating free-air temperature, TA Operating voltage NOM MAX –40 85 VCC 0 5 Ch1_In 0 VCC Ch2_In 0 VCC UNIT Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 °C V 3 TPD2S017 SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 www.ti.com 6.4 Thermal Information TPD2S017 THERMAL METRIC (1) DBV (SOT-23) UNIT 6 PINS RθJA Junction-to-ambient thermal resistance 192.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 166.2 °C/W RθJB Junction-to-board thermal resistance 39.8 °C/W ψJT Junction-to-top characterization parameter 44.7 °C/W ψJB Junction-to-board characterization parameter 39.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Ω R Series resistor 1 IIO Current from I/O pins VIO = 3 V 0.01 0.1 μA ΔRS Channel-to-channel resistance match VIO = 3 V ±8 ±15 mΩ VD Diode forward voltage for lower clamp ID = 8 mA –0.8 –0.95 RDYN Dynamic resistance (for I/O clamp) I=9A CIO IO capacitance VIO = 2.5 V; ƒ = 10 MHz VBR Break-down voltage IO = 1 mA –0.6 11 V 0.8 Ω 1 pF 12 V 6.6 Dissipation Ratings (1) 4 PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR (1) ABOVE TA ≤ 25°C TA = 70°C POWER RATING DBV 463.18 mW –4.63 mW/C 254.75 mW Derating factor is defined as the inverse of the traditional junction-to-ambient thermal resistance (RθJA). Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 TPD2S017 www.ti.com SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 6.7 Typical Characteristics 0 8.0 130 -1 7.2 117 6.4 104 -2 I/O to I/O 5.6 91 Current (A) 4.8 IPP (A) -4 -5 78 4.0 65 Power (W) 3.2 PPP (W) Insertion Loss (dB) -3 52 -6 2.4 39 1.6 26 -8 0.8 13 -9 0.0 -7 1.000E+06 1.000E+07 1.000E+08 1.000E+09 0 0 1.000E+10 5 10 15 20 Frequency (Hz) 30 35 40 45 50 Figure 2. Peak Pulse Waveforms Ch1_Out, PUT with respect to GND, VCC = 5 V Figure 1. Insertion Loss Data (S21) 8.0 130 50 7.2 117 45 6.4 104 40 5.6 91 35 4.8 78 4.0 65 52 2.4 39 PPP (W) Current (A) 3.2 30 Amplitude (V) IPP (A) 25 Time (us) 25 20 15 Power (W) 1.6 26 0.8 13 0.0 0 10 5 0 5 10 15 20 25 30 35 40 45 50 0 Time (us) -5 0 20 40 60 80 100 120 140 160 180 200 Time (ns) Figure 3. Peak Pulse Waveforms Ch2_In, PUT with respect to GND, VCC = 5 V Figure 4. IEC Clamping Waveforms 8-kV Contact, 1-GHz Bandwidth 5 0 -5 -10 -15 Amplitude (V) -20 -25 -30 -35 -40 -45 -50 -55 -60 0 20 40 60 80 100 120 140 160 180 200 Time (nS) Figure 5. IEC Clamping Waveforms –8-kV Contact, 1-GHz Bandwidth Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 5 TPD2S017 SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 www.ti.com 7 Detailed Description 7.1 Overview The TPD2S017 is a two-channel ESD protection device. The two-stage ESD diodes and 1-Ω isolation resistor topology of the device gives the system very robust and good protection during ESD strikes. The TPD2S017 conforms to the IEC61000-4-2 ESD protection standard. The TPD2S017 provides a –3-dB frequency at almost 3 GHz which provides enough bandwidth for a vast majority of applications. Thanks to the monolithic silicon technology, the tight matching of the line capacitances and series resistances ensures a minimum distorted differential signal and a high operating differential data rate. The DBV package offers a flow-through pin mapping for ease of board layout. 7.2 Functional Block Diagram Vcc (optional) TPD2S017 Ch1_In Ch1_Out Ch2_In Ch2_Out 7.3 Feature Description Each channel of the TPD2S017 device has a topology of two-stage clamps with isolation resistor. This topology optimizes the clamping performance while supporting a high bandwidth. Due to the low clamping voltage, the down stream circuits that connect to the output of the channels are well-protected. The high IEC 61000-4-2 level ensures the system's robustness during the ESD events. The good matching of the resistor and capacitance values will yield minimal distortion of the signals. The low resistance and capacitance values make sure that this device supports a high differential data rate. The flow-through pinout ensures no additional layout burden on the printed circuit board (PCB). 7.4 Device Functional Modes The TPD2S017 device stays passive and has low leakage during normal operation when the voltage at the input of each channel is from 0 V to VCC and activates when that voltage exceeds one forward diode drop above VCC or below ground. During IEC ESD events, contact transient voltages as high as ±11 kV can be suppressed. When the voltages on the protected lines fall below the trigger voltage, the device reverts back to the low leakage passive state. 6 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 TPD2S017 www.ti.com SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information When a system contains a human interface connector, it becomes vulnerable to large system-level ESD strikes that standard ICs cannot survive. Protection products are typically used to suppress ESD at these connectors. TPD2S017 is a two-channel ESD protection device. In each channel, it contains two-stage TVS diodes and a resistor between the two clamping stages as an isolation. This implementation provides good clamping performance, minimal signal distortion and the support of high data speed. 8.2 Typical Application VBUS Power Regulator Vcc (optional) TPD2S017 Ch1_In D+ Ch1_Out USB Connector USB Controller Ch2_In D- Ch2_Out GND Figure 6. Typical Application Schematic 8.2.1 Design Requirements For this design example, a TPD2S017 will be used to protect the USB 2.0 high-speed data lines. The following system parameters are known. Table 1. Design Parameters DESIGN PARAMETER VALUE High-speed mode high-level output voltage 400 mV ±10% High-speed mode low-level output voltage 0 V ± 10 mV USB 2.0 high-speed data rate 480 Mbps Required IEC 61000-4-2 ESD Protection ±8-kV Contact Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 7 TPD2S017 SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 www.ti.com 8.2.2 Detailed Design Procedure To begin the design process, some parameters must be decided upon; the designer should make sure: • Voltage range on the protected lines must not go beyond one forward diode drop above the VCC and must no go below one forward diode drop below the ground. • Operating frequency is supported by the IO capacitance CIO. • IEC 61000-4-2 protection requirement is covered by the IEC performance of the TVS diode. For this application, a high speed USB 2.0 signal that ranges from –10 mV to 440 mV will be applied to each line. Connect a 5-V power supply to VCC pin; therefore, the signal will not fall outside of the normal operation range and the TPD2S017 will stay passive and low leakage during normal operation. Next, consider the data rate of this signal and ensure that the TVS I/O capacitance will not distort this signal by filtering it. The speed of a USB 2.0 high-speed signal is 480 Mbit/s. With TPD2S017's ultra low IO capacitance, this device can support 1.5 Gbit/s data rate and thus can pass USB 2.0 high-speed signal with minimal distortion. Finally, TPD2S017 is rated for the IEC 61000-4-2 (Level 4) so it provides sufficient system-level ESD protection to the human interface in this application. See Layout Example for instructions on properly laying out TPD2S017. 8.2.3 Application Curves 50 5 0 45 -5 40 -10 35 -15 30 Amplitude (V) Amplitude (V) -20 25 20 -25 -30 -35 15 -40 10 -45 5 -50 0 -55 -5 -60 0 20 40 60 80 100 120 140 160 180 200 0 20 Time (ns) 8 40 60 80 100 120 140 160 180 200 Time (nS) Figure 7. IEC Clamping Waveforms 8-kV Contact, 1-GHz Bandwidth Submit Documentation Feedback Figure 8. IEC Clamping Waveforms –8-kV Contact, 1-GHz Bandwidth Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 TPD2S017 www.ti.com SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 9 Power Supply Recommendations The optional VCC power supply bias is recommended to lower the I/O capacitances. Ensure that the maximum voltage specifications for each pin are not violated. 10 Layout 10.1 Layout Guidelines • • • • • The optimum placement is as close to the connector as possible. – EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces, resulting in early system failures. – The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TVS and the connector. Route the protected traces as straight as possible. Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded corners with the largest radii possible. – Electric fields tend to build up on corners, increasing EMI coupling. Use thick and short traces for the power and ground paths. Run differential signal lines in pair with small distance to optimize signal integrity. 10.2 Layout Example Ch1_Out Ch2_Out GND Vcc Ch1_In Ch2_In Power Ground LEGEND VIA to Power Ground Plane VIA to Power Supply Plane Figure 9. Layout Recommendation Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 9 TPD2S017 SLLS949B – SEPTEMBER 2009 – REVISED DECEMBER 2015 www.ti.com 11 Device and Documentation Support 11.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.2 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 10 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPD2S017 PACKAGE OPTION ADDENDUM www.ti.com 12-Oct-2015 PACKAGING INFORMATION Orderable Device Status (1) TPD2S017DBVR ACTIVE Package Type Package Pins Package Drawing Qty SOT-23 DBV 6 3000 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM Op Temp (°C) Device Marking (4/5) -40 to 85 NFT (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 12-Oct-2015 Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 12-Oct-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device TPD2S017DBVR Package Package Pins Type Drawing SPQ SOT-23 3000 DBV 6 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 178.0 9.0 Pack Materials-Page 1 3.23 B0 (mm) K0 (mm) P1 (mm) 3.17 1.37 4.0 W Pin1 (mm) Quadrant 8.0 Q3 PACKAGE MATERIALS INFORMATION www.ti.com 12-Oct-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPD2S017DBVR SOT-23 DBV 6 3000 180.0 180.0 18.0 Pack Materials-Page 2 PACKAGE OUTLINE DBV0006A SOT-23 - 1.45 mm max height SCALE 4.000 SMALL OUTLINE TRANSISTOR C 3.0 2.6 1.75 1.45 PIN 1 INDEX AREA 1 0.1 C B A 6 2X 0.95 1.9 1.45 MAX 3.05 2.75 5 2 4 0.50 6X 0.25 0.2 C A B 3 (1.1) 0.15 TYP 0.00 0.25 GAGE PLANE 8 TYP 0 0.22 TYP 0.08 0.6 TYP 0.3 SEATING PLANE 4214840/B 03/2018 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.15 per side. 4. Leads 1,2,3 may be wider than leads 4,5,6 for package orientation. 5. Refernce JEDEC MO-178. www.ti.com EXAMPLE BOARD LAYOUT DBV0006A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 6X (1.1) 1 6X (0.6) 6 SYMM 2 5 3 4 2X (0.95) (R0.05) TYP (2.6) LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X SOLDER MASK OPENING METAL SOLDER MASK OPENING METAL UNDER SOLDER MASK EXPOSED METAL EXPOSED METAL 0.07 MIN ARROUND 0.07 MAX ARROUND NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED SOLDER MASK DETAILS 4214840/B 03/2018 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. www.ti.com EXAMPLE STENCIL DESIGN DBV0006A SOT-23 - 1.45 mm max height SMALL OUTLINE TRANSISTOR PKG 6X (1.1) 1 6X (0.6) 6 SYMM 2 5 3 4 2X(0.95) (R0.05) TYP (2.6) SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:15X 4214840/B 03/2018 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. www.ti.com IMPORTANT NOTICE AND DISCLAIMER TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products. Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2019, Texas Instruments Incorporated
TPD2S017DBVR 价格&库存

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TPD2S017DBVR
  •  国内价格
  • 1+1.91705
  • 30+1.85094
  • 100+1.71873
  • 500+1.58652
  • 1000+1.52041

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