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TPD3S014, TPD3S044
SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
TPD3S0x4 Current Limit Switch and D+/D– ESD Protection for USB Host Ports
1 Features
3 Description
•
•
The TPD3S0x4s are integrated devices that feature a
current-limited load switch and a two-channel
transient
voltage
suppressor
(TVS)
based
electrostatic discharge (ESD) protection diode array
for USB interfaces.
1
•
•
•
•
•
•
•
•
•
Continuous Current Ratings of 0.5 A and 1.5 A
Fixed, Constant Current Limits of 0.85 A and
2.15 A (Typ)
Fast Overcurrent Response – 2 μs
Integrated Output Discharge
Reverse Current Blocking
Short-Circuit Protection
Over Temperature Protection With Auto-Restart
Built-In Soft Start
Ambient Temperature Range: –40°C to 85°C
Product Regulatory Compliance
– UL Recognized Component (UL 2367,
Standard for Solid State Overcurrent
Protectors)
– CB File No. E169910 to IEC 60950-1,
Information Technology Equipment
IEC 61000-4-2 Level 4 ESD Protection (External
Pins)
– ±12-kV Contact Discharge (IEC 61000-4-2)
– ±15-kV Air Gap Discharge (IEC 61000-4-2)
The TPD3S0x4 devices are intended for applications
such as USB where heavy capacitive loads and
short-circuits are likely to be encountered;
TPD3S0x4s provide short-circuit protection and
overcurrent protection. The TPD3S0x4s limit the
output current to a safe level by operating in constant
current mode when the output load exceeds the
current limit threshold. The fast overload response
eases the burden on the main 5-V power supply by
quickly regulating the power when the output is
shorted. The rise and fall times for the current limit
switch are controlled to minimize current surges when
turning the device on and off.
The TPD3S014 and TPD3S044 will allow 0.5 A and
1.5 A of continuous current, respectively. The TVS
diode array is rated to dissipate ESD strikes above
the maximum level specified in the IEC 61000-4-2
international standard.
The high level of integration, combined with its easyto-route DBV package, allows this device to provide
great circuit protection for USB interfaces in
applications like laptops, high-definition digital TVs,
set-top boxes, and electronic point of sale equipment.
2 Applications
•
•
End Equipment:
– Electronic Point of Sale (ESOP)
– USB Hubs
– Laptops, Desktops
– High-Definition Digital TVs
– Set-Top Boxes
Interfaces:
– USB Ports
– 5-V Power Rails
Device Information(1)
PART NUMBER
TPD3S0x4
PACKAGE
DBV (6)
BODY SIZE (NOM)
2.90 mm × 2.80 mm
× 1.45 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
From Processor
TPD3S0x4
IN
OUT
0.1 µF
150 µF
USB3.0 Port
5V Source
EN
D1
D2
GND
VBUS
VBUS
DD-
USB Transceiver
D
+
D+
GND
TX+
TXTPD4E05U06
RX+
RXGND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPD3S014, TPD3S044
SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
4
4
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: TJ = TA = 25°C.................
Electrical Characteristics: –40°C ≤ TJ ≤ 125°C.........
Typical Characteristics ..............................................
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 15
9
Application and Implementation ........................ 16
9.1 Application Information............................................ 16
9.2 Typical Applications ................................................ 16
10 Power Supply Recommendations ..................... 20
11 Layout................................................................... 20
11.1 Layout Guidelines ................................................. 20
11.2 Layout Examples................................................... 20
11.3 Power Dissipation and Junction Temperature ...... 21
12 Device and Documentation Support ................. 23
12.1
12.2
12.3
12.4
12.5
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (January 2015) to Revision B
Page
•
Added electronic point of sale to applications ........................................................................................................................ 1
•
Added package height ........................................................................................................................................................... 1
•
Added EN values to Design Requirements ......................................................................................................................... 16
•
Added Implementing Active Low Logic section to show using EN as active low ................................................................ 17
•
Moved Power Dissipation and Junction Temperature to the Layout section ...................................................................... 21
•
Added Community Resources ............................................................................................................................................. 23
Changes from Original (October 2014) to Revision A
•
2
Page
Updated document to full version datasheet. ........................................................................................................................ 1
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Product Folder Links: TPD3S014 TPD3S044
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SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
5 Device Comparison Table
PART NUMBER
MAXIMUM OPERATING
CURRENT
OUTPUT
DISCHARGE
ENABLE
PACKAGED DEVICE AND MARKING
SOT23-6 (DBV)
TPD3S014
0.5 A
Y
High
SII
TPD3S044
1.5 A
Y
High
SIJ
6 Pin Configuration and Functions
DBV Package
6-Pin SOT-23
Top View
EN
1
6
D2
GND
2
5
D1
IN
3
4
OUT
Pin Functions
PIN
NAME
DESCRIPTION
NO.
D1
5
D2
6
EN
1
Enable input, logic high turns on power switch
GND
2
Ground
IN
3
Input voltage and power-switch drain; Connect a 0.1-µF or greater ceramic capacitor from IN to GND close to the
IC
OUT
4
Power-switch output, connect to load
USB data+ or USB data–
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature (unless otherwise noted) (1) (2)
Input voltage (3)
MIN
MAX
VIN
–0.3
6
VOUT
–0.3
6
EN
–0.3
6
D1
–0.3
6
D2
–0.3
6
Voltage from VIN to VOUT
–6
6
Junction temperature, TJ
Internally limited
Storage temperature, Tstg
(1)
(2)
(3)
–65
UNIT
V
V
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Voltages are with respect to GND unless otherwise noted.
See the Input and Output Capacitance section.
7.2 ESD Ratings
VALUE
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS001 (1)
All pins
±2000
Charged device model (CDM), per JEDEC specification
JESD22-C101 (2)
All pins
±500
(3)
VOUT, Dx pins
±12000
IEC 61000-4-2 air-gap discharge (3)
VOUT, Dx pins
±15000
IEC 61000-4-2 contact discharge
(1)
(2)
(3)
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000
V may actually have higher performance.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V
may actually have higher performance.
VOUT was tested on a PCB with input and output bypassing capacitors of 0.1 µF and 120 µF, respectively.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage
4.5
5.5
V
VEN
Input voltage, EN
0
5.5
V
VIH
High-level Input voltage, EN
2
VIL
Low-level Input voltage, EN
CIN
Input decoupling capacitance, IN to GND
IOUT (1)
TJ
(1)
4
V
0.7
0.1
µF
Continuous output current (TPD3S014)
0.5
Continuous output current (TPD3S044)
1.5
Operating junction temperature
–40
V
125
A
°C
Package and current ratings may require an ambient temperature derating of 85°C
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SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
7.4 Thermal Information
TPD3S0x4
THERMAL METRIC (1) (2)
DBV (SOT-23)
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance
185.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
124.7
°C/W
RθJB
Junction-to-board thermal resistance
32.0
°C/W
ψJT
Junction-to-top characterization parameter
23.7
°C/W
ψJB
Junction-to-board characterization parameter
31.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
RθJA(Custom)
See the Power Dissipation and Junction Temperature section
120.3
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
See Device Comparison Table.
7.5 Electrical Characteristics: TJ = TA = 25°C
Unless otherwise noted: VIN = 5 V, VEN = VIN, IOUT = 0 A. See Device Comparison Table for the rated current of each part
number. Parametrics over a wider operational range are shown in the second Electrical Characteristics: –40°C ≤ TJ ≤ 125°C
table.
TEST CONDITIONS (1)
PARAMETER
MIN
TYP
MAX
TPD3S014
97
110
TPD3S014: –40°C ≤ (TJ, TA) ≤ 85°C
96
130
TPD3S044
74
91
TPD3S044: –40°C ≤ (TJ, TA) ≤ 85°C
74
106
UNIT
POWER SWITCH
RDS(on)
Input – Output resistance
mΩ
CURRENT LIMIT
IOS (2)
Current limit, see Figure 27
TPD3S014
0.67
0.85
1.01
TPD3S044
1.70
2.15
2.50
0.02
1
A
SUPPLY CURRENT
ISD
Supply current, switch disabled
ISE
Supply current, switch enabled
IREV
Reverse leakage current
IOUT = 0A
–40°C ≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A
2
IOUT = 0A
66
–40°C ≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A
74
85
VOUT = 5 V, VIN = 0 V, Measure IVOUT
0.2
–40°C ≤ (TJ, TA) ≤ 85°C, VOUT = 5 V, VIN = 0 V,
measure IVOUT
µA
µA
1
5
µA
OUTPUT DISCHARGE
Output pull-down resistance (3)
RPD
VIN = VOUT = 5 V, disabled
400
456
600
Ω
ESD PROTECTION
ΔCIO
Differential capacitance between
the D1, D2 lines
ƒ = 1 MHz, VIO = 2.5 V
0.02
pF
CIO
(D1, D2 to GND)
ƒ = 1 MHz, VIO = 2.5 V
1.4
pF
RDYN
Dynamic on-resistance D1, D2
IEC clamps (4)
Dx to GND
0.2
Ω
(1)
(2)
(3)
(4)
GND to Dx
Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
See Current Limit for explanation of this parameter.
These Parameters are provided for reference only, and do not constitute a part of TI’s published device specifications for purposes of
TI’s product warranty.
RDYN was extracted using the least squares first of the TLP characteristics between I = 20 A and I = 30 A.
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7.6 Electrical Characteristics: –40°C ≤ TJ ≤ 125°C
Unless otherwise noted: 4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A, typical values are at 5 V and 25°C. See the Device
Comparison Table for the rated current of each part number.
TEST CONDITIONS (1)
PARAMETER
MIN
TYP
MAX
UNIT
TPD3S014
97
154
TPD3S044
74
121
1.45
2
V
POWER SWITCH
RDS(on)
Input – output resistance
mΩ
ENABLE INPUT (EN)
Threshold
Input rising
1
Leakage current
VEN = 0 V
–1
0
1
µA
tON
Turn on time
VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↑
See Figure 26
1
1.6
2.2
ms
tOFF
Turn off time
VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↓
See Figure 26
1.7
2.1
2.7
ms
tR
Rise time, output
CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 25
0.4
0.64
0.9
ms
tF
Fall time, output
CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 25
0.25
0.4
0.8
ms
TPD3S014
0.65
0.85
1.05
TPD3S044
1.60
2.15
2.70
Hysteresis
0.13
V
CURRENT LIMIT
IOS (2)
Current limit, see Figure 27
tIOS
Short-circuit response time (3)
VIN = 5 V (see Figure 27)
One Half full load → RSHORT = 50 mΩ Measure
from application to when current falls below
120% of final value
2
A
µs
SUPPLY CURRENT
ISD
Supply current, switch disabled
IOUT = 0 A
0.02
10
µA
ISE
Supply current, switch enabled
IOUT = 0 A
66
94
µA
IREV
Reverse leakage current
VOUT = 5.5 V, VIN = 0 V, Measure IVOUT
0.2
20
µA
3.77
4
V
UNDERVOLTAGE LOCKOUT
VUVLO
Rising threshold
VIN↑
Hysteresis
VIN↓
3.5
0.14
V
OUTPUT DISCHARGE
RPD
Output pull-down resistance
VIN = 4 V, VOUT = 5 V, Disabled
350
545
1200
VIN = 5 V, VOUT = 5 V, Disabled
300
456
800
In current limit
135
Not in current limit
155
Ω
THERMAL SHUTDOWN
TSHDN
Rising threshold (TJ)
Hysteresis (3)
°C
20
°C
ESD PROTECTION
II
Input leakage current (D1, D2)
VI = 3.3 V
VD
Diode forward voltage (D1, D2);
Lower clamp diode
IO = 8 mA
VBR
Breakdown voltage (D1, D2)
IBR = 1 mA
(1)
(2)
(3)
6
0.02
6
1
µA
0.95
V
V
Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
See Current Limit section for explanation of this parameter.
These parameters are provided for reference only, and do not constitute part of TI’s published device specifications for purposes of TI’s
product warranty.
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7.7 Typical Characteristics
IOUT
VIN
IN
0.1µF1
RLOAD
150µF
Enable
Signal
EN
D1
(1)
VOUT
OUT
D2
GND
During the short applied tests, 300µF is used because of the use of an external supply.
-2
0
2
4
6
Time (ms)
8
10
12
14
-4
-5
0
5
10
15
Time (ms)
0
2
4
6
Time (ms)
8
10
12
14
D001
20
25
Amplitude (V)
Figure 3. TPD3S014 Enable into Short
1.2
IN
1.12
OUT
1.04
EN
IOUT 0.96
0.88
0.8
0.72
0.64
0.56
0.48
0.4
0.32
0.24
0.16
0.08
0
30
35
Current (A)
Amplitude (V)
-2
D001
Figure 2. TPD3S014 Turn ON into 10 Ω
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-10
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
16
IN
OUT
EN
IOUT
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-4
56
-2
0
2
D001
Figure 4. TPD3S014 Pulsed Output Short
IN
52
OUT
IOUT 48
CIN = 300 PF, COUT = 150 PF
4
6
8
Time (µs)
10
12
14
16
44
40
36
32
28
24
20
16
12
8
4
0
-4
18
Current (A)
-4
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
16
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-6
Current (A)
1.5
IN
1.4
OUT
1.3
EN
IOUT 1.2
Amplitude (V)
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-6
Current (A)
Amplitude (V)
Figure 1. Test Circuit for System Operation in Typical Characteristics
D001
Figure 5. TPD3S014 Short Applied
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-4
-2
0
2
4
Time (ms)
6
8
10
12
3.75
IN
3.5
OUT
3.25
EN
IOUT 3
-6
-4
-30
-20
-10
0
10 20 30
Time (ms)
40
50
Amplitude (V)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-0.5
-1
-5
12
5
10
IOUT sinking (mA)
IREV (PA)
6
4
3
2
0
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D001
IN
65
OUT
60
IOUT
0
5
10
15
20
Time (µs)
25
30
35
55
50
45
40
35
30
25
20
15
10
5
0
-5
-10
40
D001
140
-40°C
25°C
85°C
125°C
VIN = 5V
4
0
-2
0
0.5
1
D007
Figure 10. Reverse Leakage Current (IREV) vs Temperature
8
12
6
2
120
10
8
1
20
40
60
80
100
Junction Temperature (qC)
8
Figure 9. TPD3S044 Short Applied
14
0
6
70
Figure 8. TPD3S044 Pulsed Output Short
-20
2
4
Time (ms)
CIN = 300 PF, COUT = 150 PF
D001
7
-1
-40
0
Figure 7. TPD3S044 Enable into Short
3.75
IN
3.5
OUT
3.25
EN
IOUT 3
2.75
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
60 70
Current (A)
Amplitude (V)
Figure 6. TPD3S044 Turn-On into 3.3 Ω
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-40
-2
D001
2.75
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
14
Current (A)
-6
1.65
1.5
1.35
1.2
1.05
0.9
0.75
0.6
0.45
0.3
0.15
0
14
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-8
Current (A)
2.25
IN
2.1
OUT
1.95
EN
IOUT 1.8
Amplitude (V)
7.5
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-8
Current (A)
Amplitude (V)
Typical Characteristics (continued)
1.5
2
2.5
3
3.5
Output Voltage (V)
4
4.5
5
D001
Figure 11. Output Discharge Current vs Output Voltage
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Typical Characteristics (continued)
0.465
2.4
2.2
2
0.435
1.8
0.42
1.6
1.4
0.405
0.39
1.2
0.375
1
0.36
0.8
0.345
0.6
-40
-20
0
20
40
60
80
Junction Temprature (qC)
100
120
0.33
-40
140
20
40
60
80
Junction Temprature (qC)
100
120
140
D001
Figure 13. Output Fall Time (tF) vs Temperature
TPD3S014
TPD3S044
COUT = 1 PF, RLOAD = 100 :
All Unit Types
2.4
2
1.6
ISD (PA)
tR (ms)
1.2
0.8
0.4
0
-0.4
-20
0
20
40
60
80
Junction Temprature (°C)
100
120
-0.8
-40
140
-20
0
D001
20
40
60
80
Junction Temprature (qC)
100
120
140
D001
Figure 15. Disabled Supply Current (ISD) vs Temperature
4
-40 (°C)
25 (°C)
85 (°C)
125 (°C)
All Unit Types
-40 (qC)
25 (qC)
85 (qC)
125 (qC)
3.5
3
All Unit Types, V IN = 0 V
2.5
IREV (PA)
ISD (PA)
0
2.8
Figure 14. Output Rise Time (tR) vs Temperature
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-0.2
-20
D001
Figure 12. Short Circuit Current (IOS) vs Temperature
0.8
0.775
0.75
0.725
0.7
0.675
0.65
0.625
0.6
0.575
0.55
0.525
0.5
0.475
0.45
-40
TPD3S014
TPD3S044
COUT = 1 PF, RLOAD = 100 :
0.45
tF (ms)
IOS (A)
TPD3S014
TPD3S044
VIN = 5V
2
1.5
1
0.5
0
-0.5
4
4.2
4.4
4.6
4.8
5
Input Voltage (V)
5.2
5.4
5.6
4
4.2
D001
Figure 16. Disabled Supply Current (ISD) vs Input Voltage
4.4
4.6
4.8
5
Output Voltage (V)
5.2
5.4
5.6
D001
Figure 17. Reverse Leakage Current (IREV) vs Output Voltage
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Typical Characteristics (continued)
72
85
All Unit Types, VIN = 5.5 V
68
75
66
70
64
60
60
55
58
50
45
-20
0
20
40
60
80
Junction Temprature (qC)
100
120
140
4
4
6
8
10
12
Voltage (V)
14
16
18
20
0
5.2
5.4
5.6
D001
1.6
2.4
3.2
4
4.8
Voltage (V)
5.6
6.4
7.2
8
D001
Figure 21. TPD3S044 D1/D2 Negative TLP Curve
100
0.8
90
0.6
80
D1/D2 Pins
70
Amplitude (V)
0.4
Current (mA)
0.8
D001
Figure 20. TPD3S044 D1/D2 Positive TLP Curve
0.2
0
-0.2
-0.4
60
50
40
30
20
-0.6
10
-0.8
0
-1
1
2
3
4
5 6 7 8
Voltage (V)
9 10 11 12 13 14
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-25
0
25
D001
Figure 22. D1/D2 I-V Curve
10
4.6
4.8
5
Input Voltage (V)
35
32.5
30
27.5
25
22.5
20
17.5
15
12.5
10
7.5
5
2.5
0
1
-2 -1 0
4.4
Figure 19. Enabled Supply Current (ISE) vs Input Voltage
Current (A)
Current (A)
35
32.5
30
27.5
25
22.5
20
17.5
15
12.5
10
7.5
5
2.5
0
2
4.2
D001
Figure 18. Enabled Supply Current (ISE) vs Temperature
0
All Unit Types
65
62
56
-40
-40 (°C)
25 (°C)
85 (°C)
125 (°C)
80
ISE (PA)
ISE (PA)
70
50
75
100 125
Time (ns)
150
175
200
225
D001
Figure 23. D1/D2 IEC61000-4-2 +8-kV Contact
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Typical Characteristics (continued)
20
D1/D2 Pins
10
0
Amplitude (V)
-10
-20
-30
-40
-50
-60
-70
-80
-25
0
25
50
75
100
Time (ns)
125
150
175
D001
Figure 24. D1/D2 IEC61000-4-2 –8-kV Contact
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8 Detailed Description
8.1 Overview
The TPD3S0x4 are highly integrated devices that feature a current limited load switch and a two-channel TVS
based ESD protection diode array for USB interfaces. The TPD3S014 and TPD3S044 provide 0.5 A and 1.5 A,
respectively, of continuous load current in 5-V circuits. These parts use N-channel MOSFETs for low resistance,
maintaining voltage regulation to the load. It is designed for applications where short circuits or heavy capacitive
loads will be encountered. Device features include enable, reverse blocking when disabled, output discharge
pull-down, overcurrent protection, and overtemperature protection. Finally, with two channels of TVS ESD
protection diodes integrated, TPD3S0x4s provide system level ESD protection to all the pins of the USB port.
8.2 Functional Block Diagram
Back Gate
Control
IN
Current Limit
OUT
UVLO
Thermal
Sense
Control Logic
+
Charge Pump
EN
GND
D1
D2
8.3 Feature Description
8.3.1 Undervoltage Lockout (UVLO)
The UVLO circuit disables the power switch until the input voltage reaches the UVLO turn-on threshold. Built-in
hysteresis prevents unwanted on/off cycling due to input voltage drop from large current surges.
8.3.2 Enable
The logic enable input (EN) controls the power switch, bias for the charge pump, driver, and other circuits. The
supply current is reduced to less than 1 µA when the TPD3S0x4s are disabled. The enable input is compatible
with both TTL and CMOS logic levels.
The turn on and turn off times (tON, tOFF) are composed of a delay and a rise or fall time (tR, tF). The delay times
are internally controlled. The rise time is controlled by both the TPD3S0x4s and the external loading (especially
capacitance). TPD3S0x4s fall time is controlled by the loading (R and C), and the output discharge (RPD). An
output load consisting of only a resistor will experience a fall time set by the TPD3S0x4s. An output load with
parallel R and C elements will experience a fall time determined by the (R × C) time constant if it is longer than
the TPD3S0x4’s tF. See Figure 25 and Figure 26 for a pictural description of tR, tF, tON, and tOFF. The enable
should not be left open; it may be tied to VIN.
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Feature Description (continued)
VOUT
tR
tF
90% V
EN
50%
tON
10%
50%
tOFF
90%
VOUT
10%
Figure 25. Power-On and Power-Off Timing
Figure 26. Enable Timing, Active-High Enable
8.3.3 Internal Charge Pump
The device incorporates an internal charge pump and gate drive circuitry necessary to drive the N-channel
MOSFET. The charge pump supplies power to the gate driver circuit and provides the necessary voltage to pull
the gate of the MOSFET above the source. The driver incorporates circuitry that controls the rise and fall times of
the output voltage to limit large current and voltage surges on the input supply, and provides built-in soft-start
functionality. The MOSFET power switch will block current from OUT to IN when turned off by the UVLO or
disabled.
8.3.4 Current Limit
The TPD3S0x4s respond to overloads by limiting output current to the static current-limit (IOS) levels shown in
the Electrical Characteristics: TJ = TA = 25°C table. When an overload condition is present, the device maintains
a constant output current, with the output voltage determined by (IOS × RLOAD). Two possible overload conditions
can occur.
The first overload condition occurs when either:
1. The input voltage is first applied, enable is true, and a short circuit is present (load which draws IOUT > IOS) or
2. The input voltage is present and the TPD3S0x4s are enabled into a short circuit.
The output voltage is held near zero potential with respect to ground and the TPD3S0x4s ramp the output
current to IOS. The TPD3S0x4s will limit the current to IOS until the overload condition is removed or the device
begins to thermal cycle. The device subsequently cycles current off and on as the thermal protection engages.
The second condition is when an overload occurs while the device is enabled and fully turned on. The device
responds to the overload condition within tIOS (Figure 27 and Figure 28) when the specified overload (per
Electrical Characteristics table) is applied. The response speed and shape will vary with the overload level, input
circuit, and rate of application. The current-limit response will vary between simply settling to IOS, or turnoff and
controlled return to IOS. Similar to the previous case, the TPD3S0x4s will limit the current to IOS until the overload
condition is removed or the device begins to thermal cycle.
I OUT
120% x I OS
V IN
Decreasing
Load
Resistance
Slope = -RDS(ON)
VOUT
IOS
0A
tIOS
0V
0A
Figure 27. Output Short Circuit Parameters
IOUT
IOS
Figure 28. Output Characteristic Showing Current
Limit
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Feature Description (continued)
The TPD3S0x4s thermal cycle if an overload condition is present long enough to activate thermal limiting in any
of the above cases. This is due to the relatively large power dissipation [(VIN – VOUT) × IOS] driving the junction
temperature up. The devices turn off when the junction temperature exceeds 135°C (min) while in current limit.
The devices remains off until the junction temperature cools 20°C and then restarts.
There are two kinds of current limit profiles typically available in TI switch products similar to the TPD3S0x4s.
Many older designs have an output I vs V characteristic similar to the plot labeled "Current Limit with Peaking" in
Figure 29. This type of limiting can be characterized by two parameters, the current limit corner (IOC), and the
short circuit current (IOS). IOC is often specified as a maximum value. The TPD3S0x4 parts do not present
noticeable peaking in the current limit, corresponding to the characteristic labeled "Flat Current Limit" in
Figure 29. This is why the IOC parameter is not present in the Electrical Characteristics tables.
Current Limit
with Peaking
Flat Current
Limit
V IN
Decreasing
Load
Resistance
Decreasing
Load
Resistance
Slope = -RDS(ON)
VOUT
VOUT
Slope = -RDS(ON)
V IN
0V
0V
0A
IOUT
IOUT
0A
IOS IOC
IOS
Figure 29. Current Limit Profiles
8.3.5 Output Discharge
A 470-Ω (typical) output discharge resistance will dissipate stored charge and leakage current on OUT when the
TPD3S0x4s are in UVLO or disabled. The pull-down circuit will lose bias gradually as VIN decreases, causing a
rise in the discharge resistance as VIN falls towards 0 V.
8.3.6 Input and Output Capacitance
Input and output capacitance improves the performance of the device; the actual capacitance should be
optimized for the particular application. For all applications, a 0.1 µF or greater ceramic bypass capacitor
between IN and GND is recommended as close to the device as possible for local noise decoupling.
All protection circuits such as the TPD3S0x4s will have the potential for input voltage overshoots and output
voltage undershoots.
Input voltage overshoots can be caused by either of two effects. The first cause is an abrupt application of input
voltage in conjunction with input power bus inductance and input capacitance when the IN terminal is high
impedance (before turn on). Theoretically, the peak voltage is 2 times the applied. The second cause is due to
the abrupt reduction of output short circuit current when the TPD3S0x4s turn off and energy stored in the input
inductance drives the input voltage high. Input voltage droops may also occur with large load steps and as the
TPD3S0x4s outputs are shorted. Applications with large input inductance (for example, connecting the evaluation
board to the bench power-supply through long cables) may require large input capacitance reduce the voltage
overshoot from exceeding the absolute maximum voltage of the device. The fast current-limit speed of the
TPD3S0x4s to hard output short circuits isolates the input bus from faults. However, ceramic input capacitance in
the range of 1 to 22 µF adjacent to the TPD3S0x4s inputs aids in both speeding the response time and limiting
the transient seen on the input power bus. Momentary input transients to 6.5 V are permitted.
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Feature Description (continued)
Output voltage undershoot is caused by the inductance of the output power bus just after a short has occurred
and the TPD3S0x4s have abruptly reduced OUT current. Energy stored in the inductance will drive the OUT
voltage down and potentially negative as it discharges. Applications with large output inductance (such as from a
cable) benefit from use of a high-value output capacitor to control the voltage undershoot. When implementing
USB standard applications, a 120 µF minimum output capacitance is required. Typically a 150-µF electrolytic
capacitor is used, which is sufficient to control voltage undershoots. However, if the application does not require
120 µF of capacitance, and there is potential to drive the output negative, a minimum of 10-µF ceramic
capacitance on the output is recommended. The voltage undershoot should be controlled to less than 1.5 V for
10 µs.
8.4 Device Functional Modes
8.4.1 Operation With VIN < 4 V (Minimum VIN)
These devices operate with input voltages above 4 V. The maximum UVLO voltage on IN is 4 V and the devices
will operate at input voltages above 4 V. Any voltage below 4 V may not work with these devices. The minimum
UVLO is 3.5 V, so some devices may work between 3.5 V and 4 V. At input voltages below the actual UVLO
voltage, these devices will not operate.
8.4.2 Operation With EN Control
The enable rising edge threshold voltage is 1.45 V typical and 2 V maximum. With EN held below that voltage
the device is disabled and the load switch will be open. The IC quiescent current is reduced in this state. When
the EN pin is above its rising edge threshold and the input voltage on the IN pin is above its UVLO threshold, the
device becomes active. The load switch is closed, and the current limit feature is enabled. The output voltage on
OUT will ramp up with the soft start value TON in order to prevent large inrush current surges on VBUS due to a
heavy capacitive load. When EN voltage is lowered below is falling edge threshold, the device output voltage will
also ramp down with soft turn off value TOFF to prevent large inductive voltages being presented to the system in
the case a large load current is following through the device.
8.4.3 Operation of Level 4 IEC61000-4-2 ESD Protection
Regardless of which functional mode the devices are in, TPD3S0x4 will provide Level 4 IEC61000-4-2 ESD
Protection on the pins of the USB connector.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
TPD3S0x4 are devices that feature a current limited load switch and a two-channel TVS based ESD protection
diode array. They are typically used to provide a complete protection solution for USB host ports. USB host ports
are required by the USB specification to provide a current limit on the VBUS path in order to protect the system
from overcurrent conditions on the port that could lead to system damage and user injury. Additionally, USB ports
typically require system level IEC ESD protection due to direct end-user interaction. The following design
procedure can be used to determine how to properly implement TPD3S0x4s in your systems to provide a
complete, one-chip solution for your USB ports.
9.2 Typical Applications
9.2.1 USB2.0 Application
From Processor
TPD3S014
5V Source
EN
OUT
IN
0.1 µF
150 µF
USB Port
D1
D2
GND
VBUS
USB Transceiver
DD+
GND
Figure 30. USB2.0 Application Schematic
9.2.1.1 Design Requirements
For this design example, use the following as the system parameters.
Table 1. Design Parameters
DESIGN PARAMETER
USB port type
VALUE
Standard downstream port
Signal voltage range on VBUS
0 V to 5.25 V
Current range on VBUS
0 mA to 500 mA
Drive EN low (disabled)
0 V to 0.7 V (1)
Drive EN high (enabled)
2 V to 5.5 V (1)
Maximum voltage droop allowed on adjacent USB port
330 mV
Maximum data rate
(1)
16
480 Mbps
If active low logic is desired, see the Implementing Active Low Logic section.
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9.2.1.2 Detailed Design Procedure
To properly implement your USB port with TPD3S0x4s, the first step is to determine what type of USB port you
are implementing in your system, whether it be a Standard Downstream Port (SDP), Charging Downstream Port
(CDP), or Dedicated Charging Port (DCP); this will inform you what your maximum continuous operating current
will be on VBUS. In our example, we are implementing an SDP port, so the maximum continuous current allowed
to be pulled by a device is 500mA. Therefore, we need to choose a current limit switch that is 5.25V tolerant, can
handle 500mA continuous DC current, and has a current limit point is above 500 mA so it will not current limit
during normal operation. TPD3S014 is therefore the best choice for this application, as it has these features, and
in fact was specifically designed for this application.
The next decision point is choosing your input and output capacitors for your current limit switch. A minimum of
0.1 µF is always recommended on the IN pin. For the OUT pin on VBUS, USB standard requires a minimum of
120 µF; typically a 150 µF capacitor is used. The purpose of the capacitance requirement on the VBUS line in
the USB specification is to prevent the adjacent USB port's VBUS voltage from dropping more than 330 mV
during a hot-plug or fault occurrence on the VBUS pin of one USB port. Hot-plugs and fault conditions on one
USB port should not disturb the normal operation of an adjacent USB port; therefore, it is possible to use an
output capacitance lower than 120 µF if your system is able to keep voltage droops on adjacent USB ports less
than or equal to 330 mV. For example, if the DC/DC powering VBUS has a fast transient response, 120 µF may
not be required.
If your USB port is powered from a shared system 5V rail, a system designer may desire to use an input
capacitor larger than 0.1 µF on the IN pin. This is largely dependent on your PCB layout and parasitics, as well
as your maximum tolerated voltage droop on the shared rail during transients. For more information on choosing
input and output capacitors, see Input and Output Capacitance.
The EN pin controls the on and off state of the device, and typically is connected to the system processor for
power sequencing. However, the EN pin can also be shorted to the IN pin to always have the TPD3S014 on
when 5-V power supply on; this also saves a GPIO pin on your processor.
For a USB port with High-Speed 480Mbps operation, low capacitance TVS ESD protection diodes are required to
protect the D+ and D- lines in the event of system level ESD event. TPD3S014 has 2-channels of low
capacitance TVS ESD protection diodes integrated. When placed near the USB connector, TPD3S014 offers
little or no signal distortion during normal operation. TPD3S014 also ensures that the core system circuitry is
protected in the event of an ESD strike. PCB layout is critical when implementing TVS ESD protection diodes in
your system; please read the Layout section for proper guidelines on routing your USB lines with TPD3S014.
9.2.1.3 Implementing Active Low Logic
For active low logic, a transistor can be used with the TPD3S014 EN Pin.
Using an nFET transistor, when the Processor
sends a low signal, the transistor is switched off,
and VLOGIC pulls up EN through R1. When the
Processor sends a “high” signal, the nFET is
switched on and sinks current from the EN Pin
and R1. For 5-V VLOGIC, with the appropriate onresistance (RON) value in the nFET and resistance
for R1, the VIL for EN can be met. For example,
with a transistor with RON of 3-Ω, a pull-up resistor
as low as 11 Ω provides a logic level of 0.7 V. For
power-budgeting concerns, a better choice is R1 of
40-kΩ which provides 0.25 V for EN when the
Processor asserts high, and 4.96 V when the
Processor asserts low.
VLOGIC
40 kO
TPD3S014
EN
R1
Processor
EN_Out
Figure 31. Implementing Active Low Logic for EN Pin
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9.2.1.4 Application Curves
Figure 32. Eye-Diagram Without EVM
Figure 33. Eye-Diagram With EVM, Without TPD3S0x4
Figure 34. Eye-Diagram of TPD3S0x4 on EVM
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9.2.2 USB3.0 Application
From Processor
TPD3S0x4
5V Source
EN
IN
OUT
0.1 µF
150 µF
USB3.0 Port
D1
D2
GND
VBUS
VBUS
DD-
USB Transceiver
D
+
D+
GND
TX+
TXTPD4E05U06
RX+
RXGND
Figure 35. USB3.0 Application Schematic
9.2.2.1 Design Requirements
For this design example, use the following as the system parameters.
Table 2. Design Parameters
DESIGN PARAMETER
USB port type
Signal voltage range on VBUS
Current range on VBUS
Maximum voltage droop allowed on
adjacent USB port
Maximum data rate D+, D- lines
Maximum data rate TX±, RX± lines
VALUE
Standard downstream port
0 V to 5.25 V
0 mA to 900 mA
330 mV
480 Mbps
5 Gbps
9.2.2.2 Detailed Design Procedure
The implementation of the USB3.0 port with TPD3S0x4s is identical to the USB2.0 port, except that in this use
case we must use TPD3S044 because USB3.0 SDP has a maximum VBUS current 900 mA. TPD3S014 current
limit level is too low for USB3.0 operation. In addition to using TPD3S044, USB3.0 has four more Super-Speed
Lines for transferring data 5 Gbps, and these lines also typically require Level 4 IEC61000-4-2 ESD Protection.
With a data rate of 5 Gbps, ultra-low capacitance TVS ESD protection diodes are required to protect the TX± and
RX± lines in the event of system level ESD event. TPD4E05U06 provides 4-channels of ultra-low capacitance
TVS ESD protection diodes for USB3.0 Super-Speed lines, and can be coupled with TPD3S044 to provide a twochip total protection solution for the USB3.0 host port. Please refer to the Layout section of the data sheet for
guidelines on the PCB layout of this two-chip solution.
The rest of the design procedure is identical to the USB2.0 Application section, so refer to it for the rest of the
design procedure.
9.2.2.3 Application Curves
See Application Curves for TPD3S0x4 eye-diagram performance. Refer to the TPD4E05U06 data sheet on
ti.com to see its specifications and eye-diagram performance.
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10 Power Supply Recommendations
These devices are designed to operate from a 5-V input voltage supply. This input should be well regulated. If
the input supply is located more than a few inches away from the TPD3S0x4, additional bulk capacitance may be
required in addition to the recommended minimum 0.1-µF bypass capacitor on the IN pin to keep the input rail
stable during fault events.
11 Layout
11.1 Layout Guidelines
•
•
•
The optimum placement is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer needs to minimize the possibility of EMI coupling by keeping any unprotected traces
away from the protected traces which are between the TVS and the connector.
Route the protected traces as straight as possible.
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
11.2 Layout Examples
GND
GND
D+
Top Layer GND Plane
EN
D2
GND
D1
IN
OUT
D-
VBUS
Via
Figure 36. USB2.0 Type A TPD3S0x4 Board Layout
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Layout Examples (continued)
GND
SSRX-
GND
SSRX+
TPD4E05U06
D2D2+
GND GND
D+
GND
D1D1+
DSSTX-
VBUS
SSTX+
D2
D1
OUT
GND
TPD3S044
EN GND
IN
Top Layer GND Plane
Via
Figure 37. USB3.0 Type A TPD3S044 Board Layout
11.3 Power Dissipation and Junction Temperature
It is good design practice to estimate power dissipation and maximum expected junction temperature of the
TPD3S0x4s. The system designer can control choices of the devices proximity to other power dissipating
devices and printed circuit board (PCB) design based on these calculations. These have a direct influence on
maximum junction temperature. Other factors, such as airflow and maximum ambient temperature, are often
determined by system considerations. It is important to remember that these calculations do not include the
effects of adjacent heat sources, and enhanced or restricted air flow. Addition of extra PCB copper area around
these devices is recommended to reduce the thermal impedance and maintain the junction temperature as low
as practical. In particular, connect the GND pin to a large ground plane for the best thermal dissipation. The
following PCB layout example Figure 38 was used to determine the RθJA Custom thermal impedances noted in
the Thermal Information table. It is based on the use of the JEDEC high-k circuit board construction with 4, 1 oz.
copper weight layers (2 signal and 2 plane).
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SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
www.ti.com
Power Dissipation and Junction Temperature (continued)
GND
GND
D+
EN
D2
GND
D1
IN
OUT
D-
VBUS
OUT: W: 10.424mm, H:4.536mm, A: 47.28mm2
GND: W: 6.57mm, H: 7.53mm, A: 49.47mm2
& 6 x 0.879mm diameter vias
IN: W: 4.26mm
H: 5.82mm
A: 24.79mm2
& 4 x 0.879mm
diameter vias
GND: W: 4.44mm, H: 4.00mm, A: 17.76mm2
& 2 x 0.533mm diameter vias
Figure 38. PCB Layout Example
The following procedure requires iteration because power loss is due to the internal MOSFET I2 × RDS(ON), and
RDS(ON) is a function of the junction temperature. As an initial estimate, use the RDS(ON) at 125°C from the Typical
Characteristics, and the preferred package thermal resistance for the preferred board construction from the
Thermal Information table.
TJ = TA + [(IOUT2 × RDS(ON)) × RθJA]
where
•
•
•
•
•
IOUT = Rated OUT pin current (A)
RDS(ON) = Power switch on-resistance at an assumed TJ (Ω)
TA = Maximum ambient temperature (°C)
TJ = Maximum junction temperature (°C)
RθJA = Thermal resistance (°C/W)
(1)
If the calculated TJ is substantially different from the original assumption, estimate a new value of RDS(ON) using
the typical characteristic plot and recalculate.
If the resulting TJ is not less than 125°C, try a PCB construction with a lower RθJA. Please find the junction
temperature derating curve based on the TI standard reliability duration in Figure 39.
130
TI Standard
125
120
TJ (qC)
115
110
105
100
95
90
85
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
IOUT (ADC)
1
1.1
1.2
1.3
1.4
1.5
1.6
D001
Figure 39. Junction Temperature Derating Curve
22
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Copyright © 2014–2015, Texas Instruments Incorporated
Product Folder Links: TPD3S014 TPD3S044
TPD3S014, TPD3S044
www.ti.com
SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
12 Device and Documentation Support
12.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPD3S014
Click here
Click here
Click here
Click here
Click here
TPD3S044
Click here
Click here
Click here
Click here
Click here
TPD4E05U06
Click here
Click here
Click here
Click here
Click here
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2014–2015, Texas Instruments Incorporated
Product Folder Links: TPD3S014 TPD3S044
Submit Documentation Feedback
23
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPD3S014DBVR
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
SII
TPD3S044DBVR
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
SIJ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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