TPD4E001QDBVRQ1

Product Folder Order Now Support & Community Tools & Software Technical Documents TPD4E001-Q1 SLLSEG0F – MARCH 2013 – REVISED SEPTEMBER 2017 TPD4E001-Q1 4-Channel ESD Protection Array With 1.5-pF I/O Capacitance 1 Features 3 Description • The TPD4E001-Q1 device is a low-capacitance TVS diode array designed for ESD protection in sensitive electronics connected to communication lines. Each channel consists of a pair of transient-voltagesuppression diodes that steer ESD pulses to VCC or GND. The TPD4E001-Q1 protects against ESD events up to ±8-kV contact discharge and ±15-kV airgap discharge, as specified in IEC 61000-4-2 international standard. This device has a low capacitance of 1.5-pF per channel making it ideal for use in high-speed data interfaces. The low leakage current (10 nA maximum) ensures minimum power consumption for the system and high accuracy for analog interfaces. 1 • • • • • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 3B – HBM Level 15 kV – Device CDM ESD Classification Level C5 IEC 61000-4-2 Level 4 ESD Protection – ±8-kV Contact Discharge – ±15-kV Air-Gap Discharge IEC 61000-4-5 Surge Protection – 5.5 A (8/20 µs) Low 1.5-pF Input Capacitance Low 10-nA Maximum Leakage Current 0.9-V to 5.5-V Supply Voltage Range Additionally, this device is ideal for protecting automotive head units, automotive rear seat entertainment, and automotive rear camera systems that use USB 2.0, Ethernet, or precision analog interfaces. 2 Applications • • Device Information(1) End Equipment – Automotive Head Unit – Automotive Rear Seat Entertainment – Automotive Rear Camera Systems Interfaces – USB 2.0 – Ethernet – Precision Analog Interfaces PART NUMBER TPD4E001-Q1 PACKAGE SOT-23 (6) BODY SIZE (NOM) 2.90 mm × 1.60 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Schematic VBUS 0.1 µF VCC D+ D– RT GND IO4 IO1 USB Controller D1 IO3 IO2 VBUS D+ GND D– GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPD4E001-Q1 SLLSEG0F – MARCH 2013 – REVISED SEPTEMBER 2017 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 4 4 4 4 5 5 5 6 Absolute Maximum Ratings ..................................... ESD Ratings—AEC Specification ............................. ESD Ratings—IEC Specification .............................. ESD Ratings—ISO Specification .............................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 7 7.1 Overview ................................................................... 7 7.2 Functional Block Diagram ......................................... 7 7.3 Feature Description .................................................. 7 7.4 Device Functional Modes.......................................... 8 8 Application and Implementation .......................... 9 8.1 Application Information.............................................. 9 8.2 Typical Application ................................................... 9 9 Power Supply Recommendations...................... 11 10 Layout................................................................... 12 10.1 Layout Guidelines ................................................. 12 10.2 Layout Example .................................................... 12 11 Device and Documentation Support ................. 13 11.1 11.2 11.3 11.4 11.5 11.6 Documentation Support ........................................ Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 13 13 13 13 13 13 12 Mechanical, Packaging, and Orderable Information ........................................................... 13 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision E (June 2017) to Revision F • Added ISO Specification......................................................................................................................................................... 4 Changes from Revision D (March 2015) to Revision E • Page Page Updated Typical Application Schematic ................................................................................................................................. 9 Changes from Revision C (June 2013) to Revision D Page • Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................... 1 • Changed Device CDM ESD Classification Level from C4B to C5 ........................................................................................ 1 Changes from Revision B (February 2012) to Revision C • Page Changed maximum ICC supply current in Electrical Characteristics....................................................................................... 5 Changes from Revision A (April 2013) to Revision B Page • Revised text in DESCRIPTION section .................................................................................................................................. 1 • Revised Figure 2 graph .......................................................................................................................................................... 5 • Revised APPLICATION INFORMATION schematic .............................................................................................................. 9 2 Submit Documentation Feedback Copyright © 2013–2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 TPD4E001-Q1 www.ti.com SLLSEG0F – MARCH 2013 – REVISED SEPTEMBER 2017 5 Pin Configuration and Functions DBV Package 6-Pin SOT-23 Top View IO1 1 6 IO4 GND 2 5 VCC IO2 3 4 IO3 Pin Functions PIN NAME NO. GND 2 IO1 1 IO2 3 IO3 4 IO4 6 VCC 5 TYPE GND I/O I DESCRIPTION Ground ESD-protected channel Power-supply input. Bypass VCC to GND with a 0.1-μF ceramic capacitor Submit Documentation Feedback Copyright © 2013–2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 3 TPD4E001-Q1 SLLSEG0F – MARCH 2013 – REVISED SEPTEMBER 2017 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage –0.3 7 V VIO I/O voltage tolerance –0.3 VCC + 0.3 V IPP Peak pulse current (Tp = 8/20 µs) (2) 5.5 A PPP Peak pulse power (Tp = 8/20 µs) (2) 100 W TA Free air operating temperature 125 °C TJ Junction temperature 150 °C Tstg Storage temperature 150 °C (1) (2) –40 –65 SStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5. 6.2 ESD Ratings—AEC Specification VALUE V(ESD) (1) Electrostatic discharge Human-body model (HBM), per AEC Q100-002 (1) UNIT ±15000 Charged-device model (CDM), per AEC Q100-011 V ±750 AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 ESD Ratings—IEC Specification VALUE V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±8000 IEC 61000-4-2 air-gap discharge ±15000 UNIT V 6.4 ESD Ratings—ISO Specification VALUE V(ESD) 4 Electrostatic discharge ISO 10605 (330 pF, 330 Ω) contact discharge ±8000 ISO 10605 (330 pF, 330 Ω) air-gap discharge ±15000 Submit Documentation Feedback UNIT V Copyright © 2013–2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 TPD4E001-Q1 www.ti.com SLLSEG0F – MARCH 2013 – REVISED SEPTEMBER 2017 6.5 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT TA Free air operating temperature –40 125 °C VCC pin Operating voltage 0.9 5.5 V IO1, IO2, IO3, IO4 pins Operating voltage 0 VCC V 6.6 Thermal Information TPD4E001-Q1 THERMAL METRIC (1) DBV (SOT-23) UNIT 6 PINS RθJA Junction-to-ambient thermal resistance 202.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 146.2 °C/W RθJB Junction-to-board thermal resistance 47.1 °C/W ψJT Junction-to-top characterization parameter 37.6 °C/W ψJB Junction-to-board characterization parameter 46.7 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.7 Electrical Characteristics VCC = 5 V ± 10%, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS ICC Supply current VF Diode forward voltage IF = 10 mA VBR Breakdown voltage IBR = 10 mA MIN TYP (1) 1 0.65 MAX UNIT 200 nA 0.95 V 11 V (2) VCLAMP Clamping voltage Surge strike on IO pin, GND pin grounded, VCC = 5.5 V, IPP = 5.5 A VRWM Reverse standoff voltage IO pin to GND pin IIO Channel leakage current VIO = GND to VCC CIO Channel input capacitance VCC = 5 V, bias of VCC/2, f = 10 MHz (1) (2) Positive transients 16 V 5.5 V ±10 nA 1.5 pF Typical values are at VCC = 5 V and TA = 25°C. Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5. Submit Documentation Feedback Copyright © 2013–2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 5 TPD4E001-Q1 SLLSEG0F – MARCH 2013 – REVISED SEPTEMBER 2017 www.ti.com 6.8 Typical Characteristics 2.20 100 VIO = 5.5 V VCC = 5.5 V 90 IO Leakage Current (pA) IO Capacitance (pF) 2.00 1.80 1.60 1.40 1.20 80 70 60 50 40 30 20 10 1.00 1.00 2.00 2.50 3.00 4.00 0 5.00 ±55 ±35 ±15 IO Voltage (V) IPP (A) 6 25 45 65 85 105 Temperature (ºC) Figure 1. IO Capacitance vs IO Voltage (VCC = 5 V) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 5 125 C001 Figure 2. IO Leakage Current vs Temperature 100 90 80 70 Current (A) 60 50 40 PPP (W) 0.00 30 Power (W) 20 10 0 5 10 15 20 25 30 35 40 45 Time (μs) Figure 3. Peak Pulse Waveform, VCC = 5.5 V Submit Documentation Feedback 0 50 Copyright © 2013–2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 TPD4E001-Q1 www.ti.com SLLSEG0F – MARCH 2013 – REVISED SEPTEMBER 2017 7 Detailed Description 7.1 Overview The TPD4E001-Q1 device is a low-capacitance, TVS diode array designed for ESD protection in sensitive electronics connected to communication lines. Each channel consists of a pair of transient voltage suppression diodes that steer ESD pulses to VCC or GND. The TPD4E001-Q1 device protects against ESD events up to ±8kV contact discharge and ±15-kV air-gap discharge, as specified in IEC 61000-4-2 international standard. This device has a low capacitance of 1.5-pF per channel making it ideal for use in high-speed data interfaces. The low-leakage current (10 nA maximum) ensures minimum power consumption for the system and high accuracy for analog interfaces. 7.2 Functional Block Diagram VCC IO1 IO3 IO2 IO4 GND 7.3 Feature Description 7.3.1 AEC-Q100 Qualified This device is qualified according to the AEC-Q100 standard. The device temperature rating is Grade 1 (–40°C to +125°C). The HBM Classification Level passed is 3B (> 8 kV). The CDM Classification Level passed is C5 (all pins 750 V to