TPD4E004DRYRG4

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TPD4E004 SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 TPD4E004 4-Channel ESD-Protection Array For High-Speed Data Interfaces 1 Features 3 Description • The TPD4E004 is a low-capacitance transient voltage suppression (TVS) device. TPD4E004 is designed to protect sensitive electronics attached to communication lines from electrostatic discharge (ESD). Each of the four channels consists of a pair of diodes that steer ESD current pulses to VCC or GND. The TPD4E004 protects against ESD pulses up to ±15-kV Human-Body Model (HBM) and, as specified in IEC 61000-4-2, ±8-kV contact discharge and ±12kV air-gap Discharge. This device has 1.6-pF of capacitance per channel, making it ideal for use in high-speed data IO interfaces. 1 • • • • • IEC 61000-4-2 ESD Protection – ±8-kV IEC 61000-4-2 Contact Discharge – ±12-kV IEC 61000-4-2 Air-Gap Discharge ANSI/ESDA/JEDEC JS-001 – ±15-kV Human Body Model (HBM) Low 1.6-pF Input Capacitance 0.9-V to 5.5-V Supply Voltage Range 4-Channel Device Space-Saving SON (DRY) Package The TPD4E004 is a quad-ESD structure designed for USB, ethernet, and other high-speed applications. 2 Applications • • • • • • • USB Ethernet FireWire Videos Cell Phones SVGA Video Connections Glucose Meters Device Information(1) PART NUMBER TPD4E004 PACKAGE SON (6) BODY SIZE (NOM) 1.45 mm × 1.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Application Schematic VBUS 0.1 µF VCC D+ D– RT GND IO4 IO1 USB Controller D1 IO3 IO2 VBUS D+ GND D– GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPD4E004 SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 7 7.1 Overview ................................................................... 7 7.2 Functional Block Diagram ......................................... 7 7.3 Feature Description................................................... 7 7.4 Device Functional Modes.......................................... 7 8 Application and Implementation .......................... 8 8.1 Application Information.............................................. 8 8.2 Typical Application ................................................... 8 9 Power Supply Recommendations........................ 9 10 Layout................................................................... 10 10.1 Layout Guidelines ................................................. 10 10.2 Layout Example .................................................... 10 11 Device and Documentation Support ................. 11 11.1 11.2 11.3 11.4 11.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 11 11 11 11 11 12 Mechanical, Packaging, and Orderable Information ........................................................... 11 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (February 2008) to Revision B Page • Added Device Information table, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. .................................... 1 • Deleted the ordering information ........................................................................................................................................... 1 2 Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 TPD4E004 www.ti.com SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 5 Pin Configuration and Functions DRY Package 6-Pin SON Top View IO1 1 6 VCC IO2 2 5 IO4 GND 3 4 IO3 Pin Functions PIN NO. NAME I/O DESCRIPTION 1 IO1 IO ESD-protected channel 2 IO2 IO ESD-protected channel 3 GND GND 4 IO3 IO ESD-protected channel 5 IO4 IO ESD-protected channel 6 VCC PWR Ground Power-supply input Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 3 TPD4E004 SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) VCC Supply voltage VIO Input/output voltage Bump temperature (soldering) (1) MIN MAX UNIT –0.3 5.5 V –0.3 VCC + 0.3 V Infrared (15 s) 220 Vapor phase (60 s) 215 °C Lead temperature (soldering, 10 s) 300 °C TJ Junction temperature 150 °C Tstg Storage temperature 150 °C (1) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 Electrostatic discharge V(ESD) IEC 61000-4-2 UNIT ±15000 Contact Discharge ±8000 Air-Gap Discharge ±12000 V 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT TA Operating free-air temperature –40 85 °C VCC Operating voltage for pin VCC 0.9 5.5 V 0 Minimum of: (5.8, VCC) V VIO Operating voltage for pins IO1, IO2, IO3, and IO4 6.4 Thermal Information TPD4E004 THERMAL METRIC (1) DRY (SON) UNIT 6 PINS RθJA Junction-to-ambient thermal resistance 414.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 258.6 °C/W RθJB Junction-to-board thermal resistance 251.6 °C/W ψJT Junction-to-top characterization parameter 70.6 °C/W ψJB Junction-to-board characterization parameter 248.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 TPD4E004 www.ti.com SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 6.5 Electrical Characteristics VCC = 0.9 V to 5.5 V, TA = TMIN to TMAX (unless otherwise noted) PARAMETER TEST CONDITIONS VCC Supply voltage ICC Supply current VF Diode forward voltage II Channel leakage current VBR Break-down voltage II = 10 μA CI/O Channel input capacitance VCC = 5 V, Bias of VCC/2, f = 10 MHz (1) MIN TYP (1) 0.9 IF = 1 mA MAX UNIT 5.5 V 500 nA 0.8 V ±1 nA 6 1.6 8 V 2 pF Typical values are at VCC = 5 V and TA = 25°C. Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 5 TPD4E004 SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 www.ti.com 6.6 Typical Characteristics 160 70 140 60 120 100 Leakage Current (pA) IO Current (mA) 50 80 60 40 20 40 30 20 10 0 0 1.05 1.15 1.25 1.35 1.45 1.55 –40 55 25 IO Voltage (V) 85 Temperature (°C) Figure 1. Forward Diode Voltage (Upper Clamp Diode) (VCC = 0 V, DC Sweep Across the IO Pin) Figure 2. Leakage Current vs Temperature (VIO = 2.5 V) 5.0 16.0 14.0 4.0 IO Capacitance (pF) 12.0 IO Current (µA) 10.0 8.0 6.0 4.0 3.0 2.0 1.0 2.0 0.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 1 3 4 5 IO Voltage (V) IO Voltage (V) Figure 3. Reverse Diode Curve Current IO to Gnd (VCC = Open) 6 2 Figure 4. IO Capacitance vs Input Voltage (VCC = 5 V) Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 TPD4E004 www.ti.com SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 7 Detailed Description 7.1 Overview The TPD4E004 is a four-channel TVS protection diode array. The TPD4E004 is rated to dissipate contact ESD strikes of ±8-kV contact and ±12-kV air-gap, meeting Level 4 as specified in the IEC 61000-4-2 international standard. This device has a 1.6-pF IO capacitance per channel, making it ideal for use in high-speed data IO interfaces. 7.2 Functional Block Diagram VCC IO1 IO3 IO2 IO4 GND 7.3 Feature Description TPD4E004 is a TVS which provides ESD protection for up to four channels, withstanding up to ±8-kV contact and ±12-kV air-gap ESD per IEC 61000-4-2. The monolithic technology yields exceptionally small variations in capacitance between any IO pin of TPD4E004. The small footprint is ideal for applications where space-saving designs are important. 7.4 Device Functional Modes The TPD4E004 device is a passive integrated circuit that triggers when voltages are above VBR or below the diodes VF of approximately –0.3 V. During ESD events, voltages as high as ±8-kV contact and ±12-kV air-gap ESD can be directed to ground via the internal diodes. Once the voltages on the protected line fall below the trigger levels of TPD4E004 (usually within 10’s of nano-seconds) the device reverts back to its high-impedance state. Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 7 TPD4E004 SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information TPD4E004 is a diode array type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a tolerable level for the protected IC. 8.2 Typical Application VBUS 0.1 µF VCC D+ D– RT GND IO4 IO1 USB Controller IO3 IO2 VBUS D+ GND D– GND Figure 5. Application Schematic 8.2.1 Design Requirements For this design example, a single TPD4E004 is used to protect all the pins of two USB2.0 connectors. Table 1 lists the design parameters for the USB application. Table 1. Design Parameters DESIGN PARAMETER VALUE Signal range on IO1, IO2, IO3, and IO4 0 V to 3.6 V Signal voltage range on VCC 0 V to 5.5 V Operating Frequency 240 MHz 8.2.2 Detailed Design Procedure When placed near the USB connectors, the TPD4E004 ESD solution offers little or no signal distortion during normal operation due to low IO capacitance and ultra-low leakage current specifications. The TPD4E004 ensures that the core circuitry is protected and the system is functioning properly in the event of an ESD strike. For proper operation, see the the following layout and design guidelines should be followed: 1. Place the TPD4E004 solution close to the connectors. This allows the TPD4E004 to take away the energy 8 Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 TPD4E004 www.ti.com 2. 3. 4. 5. SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 associated with ESD strike before it reaches the internal circuitry of the system board. Place a 0.1-μF capacitor very close to the VCC pin. This limits any momentary voltage surge at the IO pin during the ESD strike event. Ensure that there is enough metallization for the VCC and GND loop. During normal operation, the TPD4E004 consumes nA leakage current. But during the ESD event, VCC and GND may see 15-A to 30-A of current, depending on the ESD level. Sufficient current path enables safe discharge of all the energy associated with the ESD strike. Leave the unused IO pins floating. In this example of protecting two USB ports, none of the IO pins will be left unused. The VCC pin can be connected in two different ways: (a) If the VCC pin is connected to the system power supply, the TPD4E004 works as a transient suppressor for any signal swing above VCC + VF. A 0.1-μF capacitor on the device VCC pin is recommended for ESD bypass. (b) If the VCC pin is not connected to the system power supply, the TPD4E004 can tolerate higher signal swing in the range up to 5.8 V. Please note that a 0.1-μF capacitor is still recommended at the VCC pin for ESD bypass. 8.2.3 Application Curves Figure 6 is a capture of the voltage clamping waveform of TPD4E004 during an +8kV Contact IEC 61000-4-2 ESD strike. 120 100 Amplitude (V) 80 60 40 20 0 –20 0 5 10 15 20 25 30 35 40 45 50 Time (ns) Figure 6. IEC ESD Clamping Waveforms +8-KV Contact 9 Power Supply Recommendations This device is a passive ESD protection device so there is no need to power it. Make sure that the maximum voltage specifications for each pin are not violated. Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 9 TPD4E004 SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 www.ti.com 10 Layout 10.1 Layout Guidelines • • • The optimum placement is as close to the connector as possible. – EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces, resulting in early system failures. – The PCB designer needs to minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TVS and the connector. Route the protected traces as straight as possible. Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded corners with the largest radii possible. – Electric fields tend to build up on corners, increasing EMI coupling. 10.2 Layout Example D1 TPD4E004 1 D1 D2 D2 Legend VIA to Internal GND Plane VIA to Internal VBUS Plane Pin to GND Signal VIA in SMD Pad Layer 1 Routing Layer 2 Routing Figure 7. TPD4E004 Layout Example 10 Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 TPD4E004 www.ti.com SLVS729B – FEBRUARY 2008 – REVISED MARCH 2016 2016 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: • • Reading and Understanding an ESD Protection Datasheet, SLLA305 ESD Protection Layout Guide, SLVA680 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2008–2016, Texas Instruments Incorporated Product Folder Links: TPD4E004 11 PACKAGE OPTION ADDENDUM www.ti.com 13-Aug-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPD4E004DRYR ACTIVE SON DRY 6 5000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2P TPD4E004DRYRG4 ACTIVE SON DRY 6 5000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2P (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of