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TPS22965
SLVSBJ0F – AUGUST 2012 – REVISED AUGUST 2016
TPS22965 5.7-V, 6-A, 16-mΩ On-Resistance Load Switch
1 Features
3 Description
•
•
•
The TPS22965x is a single channel load switch that
provides configurable rise time to minimize inrush
current. The device contains an N-channel MOSFET
that can operate over an input voltage range of 0.8 V
to 5.7 V and can support a maximum continuous
current of 6 A. The switch is controlled by an on and
off input (ON), which is capable of interfacing directly
with low-voltage control signals. In the TPS22965, a
225-Ω on-chip load resistor is added for quick output
discharge when switch is turned off.
1
•
•
•
•
•
•
•
Integrated Single Channel Load Switch
Input Voltage Range: 0.8 V to 5.7 V
Ultra-Low On Resistance (RON)
– RON = 16 mΩ at VIN = 5 V (VBIAS = 5 V)
– RON = 16 mΩ at VIN = 3.6 V (VBIAS = 5 V)
– RON = 16 mΩ at VIN = 1.8 V (VBIAS = 5 V)
6-A Maximum Continuous Switch Current
Low Quiescent Current (50 µA)
Low Control Input Threshold Enables Use of
1.2-, 1.8-, 2.5-, and 3.3-V Logic
Configurable Rise Time
Quick Output Discharge (QOD) (Optional)
SON 8-pin Package With Thermal Pad
ESD Performance Tested per JESD 22
– 2000-V HBM and 1000-V CDM
The TPS22965x is available in a small, space-saving
2-mm × 2-mm 8-pin SON package (DSG) with
integrated thermal pad allowing for high power
dissipation. The device is characterized for operation
over the free-air temperature range of –40°C to
+105°C.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
2 Applications
TPS22965
TPS22965N
•
•
•
•
•
•
•
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Ultrabook™
Notebooks and Netbooks
Tablet PC
Consumer Electronics
Set-top Boxes and Residential Gateways
Telecom Systems
Solid State Drives (SSDs)
WSON (8)
2.00 mm × 2.00 mm
Simplified Schematic
Power
Supply
VIN
ON
CIN
On-Resistance vs Input Voltage
(VBIAS = 5 V, IOUT = –200 mA)
VOUT
ON
40
CL
-40qC
25qC
105qC
RL
CT
OFF
35
TPS22965x
Copyright © 2016, Texas Instruments Incorporated
On-Resistance (m:)
GND
GND
VBIAS
30
25
20
15
10
5
0
0
0.5
1
1.5
2 2.5 3
3.5
Input Voltage (V)
4
4.5
5
5.5
D008
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22965
SLVSBJ0F – AUGUST 2012 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
8
9
1
1
1
2
4
4
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 6
Electrical Characteristics—VBIAS = 5 V ..................... 6
Electrical Characteristics—VBIAS = 2.5 V .................. 7
Switching Characteristics .......................................... 8
Typical DC Characteristics........................................ 9
Typical Switching Characteristics ........................... 12
Parameter Measurement Information ................ 15
Detailed Description ............................................ 16
9.1 Overview ................................................................. 16
9.2 Functional Block Diagram ....................................... 16
9.3 Feature Description................................................. 17
9.4 Device Functional Modes........................................ 17
10 Application and Implementation........................ 18
10.1 Application Information.......................................... 18
10.2 Typical Application ................................................ 19
11 Power Supply Recommendations ..................... 21
12 Layout................................................................... 22
12.1 Layout Guidelines ................................................. 22
12.2 Layout Example .................................................... 22
13 Device and Documentation Support ................. 23
13.1
13.2
13.3
13.4
13.5
13.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
23
14 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
Changes from Revision E (May 2016) to Revision F
•
Updated all Typical Characteristics Graphs ........................................................................................................................... 9
Changes from Revision D (March 2015) to Revision E
•
Page
Page
Changed QOD from "TPS22965 Only" to "Optional" in Features section.............................................................................. 1
Changes from Revision C (February 2015) to Revision D
Page
•
Added TPS22965N part number ........................................................................................................................................... 1
•
Updated Thermal Information table ....................................................................................................................................... 6
•
Updated typical AC timing parameters (tables, graphs and scope captures) ..................................................................... 12
Changes from Revision B (June 2014) to Revision C
Page
•
Extended Recommended Operating free-air temperature range maximum to 105°C. ......................................................... 1
•
Added temperature operations to Electrical Characteristics, VBIAS = 5 V .............................................................................. 6
•
Added temperature operations to Electrical Characteristics, VBIAS = 2.5 V ........................................................................... 7
Changes from Revision A (August 2013) to Revision B
Page
•
Added Device Information table, ESD Ratings table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 1
•
Changed MAX value of "VIN" from 5.5 V to 5.7 V. ................................................................................................................. 5
•
Changed MAX value of "VBIAS" from 5.5 V to 5.7 V. .............................................................................................................. 5
•
Changed MAX value of "VON" from 5.5 V to 5.7 V.................................................................................................................. 5
2
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•
SLVSBJ0F – AUGUST 2012 – REVISED AUGUST 2016
Added Thermal Information table .......................................................................................................................................... 6
Changes from Original (August 2012) to Revision A
•
Page
Updated VON MAX value to fix typo that restricted operating range. Changed MAX value from "VIN" to "5.5" to align
with rest of document. ........................................................................................................................................................... 5
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SLVSBJ0F – AUGUST 2012 – REVISED AUGUST 2016
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5 Device Comparison Table
DEVICE
RON AT 3.3 V (TYP)
QUICK OUTPUT
DISCHARGE
MAXIMUM OUTPUT CURRENT
ENABLE
TPS22965
16 mΩ
Yes
6A
Active high
TPS22965N
16 mΩ
No
6A
Active high
6 Pin Configuration and Functions
DSG PACKAGE
8-Pin WSON
Top View
DSG PACKAGE
8-Pin WSON
Bottom View
VIN
1
8
VOUT
VOUT
8
1
VIN
2
7
VOUT
VOUT
7
2 VIN
ON
3
6
CT
CT
6
3 ON
VBIAS
4
5
GND
GND
5
4 VBIAS
VIN
Pin Functions
PIN
No.
NAME
I/O
1
DESCRIPTION
VIN
I
Switch input. Input bypass capacitor recommended for minimizing VIN dip. Must be
connected to Pin 1 and Pin 2. See the Application and Implementation section for more
information
3
ON
I
Active high switch control input. Do not leave floating
4
VBIAS
I
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V
to 5.7 V. See the Application and Implementation section for more information
5
GND
—
Device ground
6
CT
O
Switch slew rate control. Can be left floating. See the Adjustable Rise Time section for more
information
VOUT
O
Switch output
Thermal Pad
—
Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See the Layout
Example section for layout guidelines
2
7
8
—
4
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
(2)
MIN
MAX
UNIT
VIN
Input voltage
–0.3
6
V
VOUT
Output voltage
–0.3
6
V
VBIAS
Bias voltage
–0.3
6
V
VON
On voltage
–0.3
6
V
IMAX
Maximum continuous switch current
6
A
IPLS
Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle
8
A
TJ
Maximum junction temperature
125
°C
Tstg
Storage temperature
150
°C
(1)
(2)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground pin.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
7.3 Recommended Operating Conditions
MIN
MAX
UNIT
VIN
Input voltage
0.8
VBIAS
V
VBIAS
Bias voltage
2.5
5.7
V
VON
ON voltage
0
5.7
V
VOUT
Output voltage
VIN
V
VIH
High-level input voltage, ON
VBIAS = 2.5 V to 5.7 V
1.1
5.7
V
VIL
Low-level input voltage, ON
VBIAS = 2.5 V to 5.7 V
0
0.5
CIN
Input capacitor
1 (1)
TA
Operating free-air temperature (2)
–40
(1)
(2)
V
µF
105
°C
See the Application Information section.
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the
maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package
in the application (θJA), as given by the equation: TA (max) = TJ(max) – (θJA × PD(max))
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7.4 Thermal Information
TPS22965x
THERMAL METRIC (1)
DSG (WSON)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
72.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
96.1
°C/W
RθJB
Junction-to-board thermal resistance
42.1
°C/W
ψJT
Junction-to-top characterization parameter
3.3
°C/W
ψJB
Junction-to-board characterization parameter
42.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
13.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics—VBIAS = 5 V
Unless otherwise noted, the specification in the following table applies where VBIAS = 5 V. Typical values are for TA = 25 °C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
50
75
µA
2
µA
POWER SUPPLIES AND CURRENTS
IQ VVBIAS
VBIAS quiescent current
IOUT = 0 mA,
VIN = VON = VBIAS = 5 V
ISD VBIAS
VBIAS shutdown current
VON = GND, VOUT = 0 V
ISD VIN
VIN off-state supply current
VON = GND,
VOUT = 0 V
ION
ON pin input leakage current
VON = 5.5 V
–40°C to +105°C
–40°C to +105°C
VIN = 5 V
–40°C to +105°C
0.005
5
VIN = 3.3 V
–40°C to +105°C
0.002
3
VIN = 1.8 V
–40°C to +105°C
0.002
2
VIN = 0.8 V
–40°C to +105°C
0.001
–40°C to +105°C
µA
1
0.5
µA
RESISTANCE CHARACTERISTICS
25°C
VIN = 5 V
23
25
RON
ON-state resistance
IOUT = –200 mA,
VBIAS = 5 V
23
25
23
–40°C to +105°C
25
23
–40°C to +105°C
25
RPD
(1)
6
(1)
Output pulldown resistance
VIN = 5 V, VON = 0 V, IOUT = 15 mA
16
23
–40°C to +105°C
25
23
–40°C to +105°C
25
225
mΩ
21
–40°C to +85°C
–40°C to +105°C
mΩ
21
–40°C to +85°C
16
mΩ
21
–40°C to +85°C
25°C
VIN = 0.8 V
16
mΩ
21
–40°C to +85°C
25°C
VIN = 1.2 V
16
mΩ
21
–40°C to +105°C
25°C
VIN = 1.5 V
16
–40°C to +85°C
25°C
VIN = 1.8 V
21
–40°C to +105°C
25°C
VIN = 3.3 V
16
–40°C to +85°C
300
mΩ
Ω
TPS22965 only
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7.6 Electrical Characteristics—VBIAS = 2.5 V
Unless otherwise noted, the specification in the following table applies where VBIAS = 2.5 V. Typical values are for TA = 25 °C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
20
30
µA
2
µA
POWER SUPPLIES AND CURRENTS
IQ VVBIAS
VBIAS quiescent current
IOUT = 0 mA,
VIN = VON = VBIAS = 2.5 V
ISD VBIAS
VBIAS shutdown current
VON = GND, VOUT = 0 V
ISD VIN
VIN off-state supply current
VON = GND,
VOUT = 0 V
ION
ON pin input leakage current
VON = 5.5 V
–40°C to +105°C
–40°C to +105°C
VIN = 2.5 V
–40°C to +105°C
0.005
3
VIN = 1.8 V
–40°C to +105°C
0.002
2
VIN = 1.2 V
–40°C to +105°C
0.002
2
VIN = 0.8 V
–40°C to +105°C
0.001
–40°C to +105°C
µA
1
0.5
µA
RESISTANCE CHARACTERISTICS
25°C
VIN = 2.5 V
20
27
–40°C to +105°C
28
25°C
VIN = 1.8 V
19
ON-state resistance
IOUT = –200 mA,
VBIAS = 2.5 V
VIN = 1.5 V
26
–40°C to +105°C
28
25
–40°C to +105°C
27
RPD (1)
(1)
Output pulldown resistance
VIN = 2.5 V, VON = 0 V, IOUT = 1 mA
18
25
–40°C to +105°C
27
17
25
–40°C to +105°C
27
275
mΩ
22
–40°C to +85°C
–40°C to +105°C
mΩ
23
–40°C to +85°C
25°C
VIN = 0.8 V
0
mΩ
23
–40°C to +85°C
25°C
VIN = 1.2 V
18
mΩ
23
–40°C to +85°C
25°C
RON
24
–40°C to +85°C
325
mΩ
Ω
TPS22965 only
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7.7 Switching Characteristics
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
VIN = VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON
Turnon time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
1600
tOFF
Turnoff time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
9
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
1985
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
3
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
660
µs
VIN = 0.8 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON
Turnon time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
730
tOFF
Turnoff time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
100
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
380
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
8
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
560
µs
VIN = 2.5 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON
Turnon time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
tOFF
Turnoff time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
2435
9
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
2515
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
4
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
1230
µs
VIN = 0.8 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON
Turnon time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
tOFF
Turnoff time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
70
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
930
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
8
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
1110
8
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7.8 Typical DC Characteristics
100
-40qC
25qC
105qC
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
2
2.5
3
3.5
4
4.5
Bias Voltage (V)
VIN = 1.8 V
5
5.5
0
6
VON = 5 V
VOUT = 0 V
1
1.5
VBIAS = 5 V
Figure 1. VBIAS Quiescent Current vs Bias Voltage
2
2.5 3 3.5 4
Input Voltage (V)
4.5
5
5.5
6
D002
VON = 5 V
VOUT = 0 V
Figure 2. VBIAS Quiescent Current vs Input Voltage
0.018
-40qC
25qC
105qC
0.6
-40qC
25qC
105qC
0.016
VBIAS Shutdown Current (PA)
VBIAS Shutdown Current (PA)
0.5
D001
0.7
0.5
0.4
0.3
0.2
0.1
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
2
2.5
3
3.5
4
4.5
Bias Voltage (V)
VIN = 5 V
5
5.5
6
0
0.5
1
1.5
D003
VON = 0 V
VOUT = 0 V
VBIAS = 5 V
Figure 3. VBIAS Shutdown Current vs Bias Voltage
2
2.5
3
3.5
Input Voltage (V)
4
4.5
5
5.5
D004
VON = 0 V
VOUT = 0 V
Figure 4. VBIAS Shutdown Current vs Input Voltage
40
24
VIN = 0.8 V
VIN = 1.8 V
VIN = 2.5 V
35
VIN = 0.8 V
VIN = 3.3 V
VIN = 5 V
22
30
On-Resistance (m:)
On-Resistance (m:)
-40qC
25qC
105qC
90
VBIAS Quiescent Current (PA)
VBIAS Quiescent Current (PA)
70
25
20
15
10
20
18
16
14
12
5
0
-50
VBIAS = 2.5 V
0
50
Temperature (qC)
100
150
10
-50
D005
IOUT = –200 mA
VON = 5.5 V
All three RON curves have the same
values and hence only one line is visible.
Figure 5. On-Resistance vs Ambient Temperature
VBIAS = 5 V
Note:
0
50
Temperature (qC)
100
150
D006
IOUT = –200 mA
VON = 5.5 V
All three RON curves have the same
values; therefore, only one line is visible.
Figure 6. On-Resistance vs Ambient Temperature
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Typical DC Characteristics (continued)
40
40
-40qC
25qC
105qC
-40qC
25qC
105qC
35
30
On-Resistance (m:)
On-Resistance (m:)
35
25
20
15
10
5
30
25
20
15
10
5
0
0
0
0.5
1
VBIAS = 2.5 V
1.5
2
Input Voltage (V)
2.5
3
0
0.5
1
1.5
D007
IOUT = –200 mA
VON = 5.5 V
VBIAS = 5 V
Figure 7. On-Resistance vs Input Voltage
2 2.5 3
3.5
Input Voltage (V)
4
4.5
5
5.5
D008
IOUT = –200 mA
VON = 5.5 V
Figure 8. On-Resistance vs Input Voltage
320
VIN = 0.8V
24
VIN = 1.8V
Pulldown Resistance (:
22
VIN = 2.5V
RON (mŸ)
20
-40qC
25qC
105qC
300
VIN = 3.3V
18
16
14
12
280
260
240
220
10
2
2.5
3
3.5
4
4.5
5
5.5
6
VBIAS (V)
TA = 25°C
200
2
C001
IOUT = –200 mA
VON = 5.5 V
2.5
5
5.5
6
D010
VON = 0 V
Figure 10. Pulldown Resistance vs Bias Voltage
2.5
30
-40ƒC
28
2
25ƒC
26
105ƒC
24
RON (mŸ)
1.5
VOUT (V)
3.5
4
4.5
Bias Voltage V)
VIN = 1.8 V
Figure 9. On-Resistance vs Bias Voltage
1
VBIAS = 2.5V
0.5
0
22
20
18
16
VBIAS = 3.3V
14
VBIAS = 5V
12
VBIAS = 5.5V
-0.5
10
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
VON (V)
VIN = 2 V
1.5
0
0.5
TA = 25°C
1
1.5
2
2.5
VIN (V)
C001
VBIAS = 2.5 V
Figure 11. Output Voltage vs ON Voltage
10
3
IOUT = –4 A
3
C001
VON = 5.5 V
Figure 12. On-Resistance vs Input Voltage
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Typical DC Characteristics (continued)
30
-40ƒC
28
25ƒC
26
105ƒC
RON (mŸ)
24
22
20
18
16
14
12
10
0
1
2
3
4
5
VIN (V)
VBIAS = 5 V
6
C001
IOUT = –4 A
VON = 5.5 V
Figure 13. On-Resistance vs Input Voltage
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7.9 Typical Switching Characteristics
TA = 25°C, CT = 1000 pF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω
1600
900
-40°C
25°C
1400
25°C
105°C
105°C
700
tD (µs)
1200
tD (µs)
-40°C
800
1000
800
600
500
400
600
300
400
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VIN (V)
VBIAS = 2.5 V
0.0
VBIAS = 5 V
Figure 14. Delay Time vs Input Voltage
3.0
4.0
5.0
6.0
C001
CT = 1000 pF
Figure 15. Delay Time vs Input Voltage
12
-40°C
25°C
10
-40°C
25°C
10
105°C
105°C
8
tF (µs)
8
tF (µs)
2.0
VIN (V)
CT = 1000 pF
12
6
6
4
4
2
2
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VIN (V)
VBIAS = 2.5 V
0.0
1.0
2.0
CT = 1000 pF
VBIAS = 5 V
Figure 16. Fall Time vs Input Voltage
4.0
5.0
6.0
C001
CT = 1000 pF
Figure 17. Fall Time vs Input Voltage
160
-40°C
-40°C
140
25°C
100
3.0
VIN (V)
C001
120
105°C
25°C
105°C
120
tOFF (µs)
80
tOFF (µs)
1.0
C001
60
100
80
60
40
40
20
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VIN (V)
VBIAS = 2.5 V
3.0
0.0
CT = 1000 pF
2.0
3.0
4.0
5.0
VIN (V)
VBIAS = 5 V
Figure 18. Turnoff Time vs Input Voltage
12
1.0
C001
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6.0
C001
CT = 1000 pF
Figure 19. Turnoff Time vs Input Voltage
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Typical Switching Characteristics (continued)
TA = 25°C, CT = 1000 pF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω
3500
2000
-40°C
3000
1800
25°C
105°C
1600
105°C
2500
1400
2000
tON (µs)
tON (µs)
-40°C
25°C
1500
1200
1000
800
600
1000
400
500
200
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VIN (V)
VBIAS = 2.5 V
0.0
CT = 1000 pF
VBIAS = 5 V
3.0
4.0
5.0
6.0
C001
CT = 1000 pF
Figure 21. Turnon Time vs Input Voltage
2500
-40°C
-40°C
25°C
3000
2.0
VIN (V)
Figure 20. Turnon Time vs Input Voltage
3500
1.0
C001
25°C
2000
105°C
105°C
2000
tR (µs)
tR (µs)
2500
1500
1500
1000
1000
500
500
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VIN (V)
VBIAS = 2.5 V
3.0
0.0
CT = 1000 pF
VBIAS = 5 V
VBIAS = 2.5 V
RL = 10 Ω
2.0
3.0
4.0
5.0
6.0
VIN (V)
Figure 22. Rise Time vs Input Voltage
VIN = 0.8 V
CL = 0.1 µF
1.0
C001
C001
CT = 1000 pF
Figure 23. Rise Time vs Input Voltage
CIN = 1 µF
VIN = 0.8 V
CL = 0.1 µF
Figure 24. Turnon Response Time
VBIAS = 5 V
RL = 10 Ω
CIN = 1 µF
Figure 25. Turnon Response Time
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Typical Switching Characteristics (continued)
TA = 25°C, CT = 1000 pF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω
VIN = 2.5 V
CL = 0.1 µF
VBIAS = 2.5 V
RL = 10 Ω
CIN = 1 µF,
VIN = 5 V
CL = 0.1 µF
Figure 26. Turnon Response Time
VIN = 0.8 V
CL = 0.1 µF
VBIAS = 2.5 V
RL = 10 Ω
CIN = 1 µF
VBIAS = 2.5 V
RL = 10 Ω
VIN = 0.8 V
CL = 0.1 µF
VBIAS = 5 V
RL = 10 Ω
CIN = 1 µF
Figure 29. Turnoff Response Time
CIN = 1 µF
VIN = 5 V
CL = 0.1 µF
Figure 30. Turnoff Response Time
14
CIN = 1 µF
Figure 27. Turnon Response Time
Figure 28. Turnoff Response Time
VIN = 2.5 V
CL = 0.1 µF
VBIAS = 5 V
RL = 10 Ω
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VBIAS = 5 V
RL = 10 Ω)
CIN = 1 µF
Figure 31. Turnoff Response Time
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8 Parameter Measurement Information
A.
Rise and fall times of the control signal is 100 ns.
Figure 32. Test Circuit
Figure 33. tON and tOFF Waveforms
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9 Detailed Description
9.1 Overview
The TPS22965x device is a single channel, 6-A load switch in an 8-pin SON package. To reduce the voltage
drop in high current rails, the device implements an ultra-low resistance N-channel MOSFET. The device has a
programmable slew rate for applications that require specific rise-time.
The device has very low leakage current during off state. This prevents downstream circuits from pulling high
standby current from the supply. Integrated control logic, driver, power supply, and output discharge FET
eliminates the need for any external components, which reduces solution size and bill of materials (BOM) count.
9.2 Functional Block Diagram
VIN
Charge
Pump
VBIAS
ON
Control
Logic
VOUT
CT
TPS22965 Only
GND
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9.3 Feature Description
9.3.1 Adjustable Rise Time
A capacitor to GND on the CT pin sets the slew rate. The voltage on the CT pin can be as high as 12 V;
therefore, the minimum voltage rating for the CT capacitor must be 25 V for optimal performance. An
approximate formula for the relationship between CT and slew rate when VBIAS is set to 5 V is shown in
Equation 1. This equation accounts for 10% to 90% measurement on VOUT and does NOT apply for CT = 0 pF.
Use Table 1 to determine rise times for when CT = 0 pF.
SR = 0.38 ´ CT + 34
where
•
•
•
SR is the slew rate (in µs/V)
CT is the the capacitance value on the CT pin (in pF)
The units for the constant 34 are µs/V. The units for the constant 0.38 are µs/(V × pF).
(1)
Rise time can be calculated by multiplying the input voltage by the slew rate. Table 1 contains rise time values
measured on a typical device. Rise times shown in Table 1 are only valid for the power-up sequence where VIN
and VBIAS are already in steady state condition before the ON pin is asserted high.
Table 1. Rise Time vs CT Capacitor
CT (pF)
(1)
TYPICAL VALUES at 25°C with a 25 V X7R 10% CERAMIC CAPACITOR on CT (1)
VIN = 5 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
VIN = 1.05 V
0
180
136
94
84
74
70
VIN = 0.8 V
60
220
547
378
232
202
173
157
129
470
962
654
386
333
282
252
206
1000
1983
1330
765
647
533
476
382
2200
4013
2693
1537
1310
1077
959
766
4700
8207
5490
3137
2693
2200
1970
1590
10000
17700
11767
6697
5683
4657
4151
3350
Rise time (µs) 10% - 90%, CL = 0.1 µF, CIN = 1 µF, RL = 10 Ω, VBIAS = 5 V
9.3.2 Quick Output Discharge (QOD) (Optional)
The TPS22965 includes a QOD feature. When the switch is disabled, a discharge resistor is connected between
VOUT and GND. This resistor has a typical value of 225 Ω and prevents the output from floating while the switch
is disabled.
9.3.3 Low Power Consumption During Off State
The ISD VIN supply current is 0.01 µA typical at 1.8 VIN. Typically, the downstream loads must have a
significantly higher off-state leakage current. The load switch allows system standby power consumption to be
reduced.
9.4 Device Functional Modes
The Table 2 lists the VOUT pin states as determined by the ON pin.
Table 2. VOUT Connection
ON
TPS22965
TPS22965N
L
GND
Open
H
VIN
VIN
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
10.1.1 ON and OFF Control
The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic thresholds. It can be used with any microcontroller with 1.2 V or higher GPIO voltage. This pin cannot
be left floating and must be driven either high or low for proper functionality.
10.1.2 Input Capacitor (Optional)
To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF ceramic
capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop during high current applications. When switching heavy loads, it is recommended to have an
input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.
10.1.3 Output Capacitor (Optional)
Becuase of the integrated body diode in the NMOS switch, a CIN greater than CL is highly recommended. A CL
greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current
flow through the body diode from VOUT to VIN. A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip
caused by inrush currents during startup; however, a 10 to 1 ratio for capacitance is not required for proper
functionality of the device. A ratio smaller than 10 to 1 (such as 1 to 1) could cause slightly more VIN dip upon
turn-on due to inrush currents. This can be mitigated by increasing the capacitance on the CT pin for a longer
rise time (see the Adjustable Rise Time section).
10.1.4 VIN and VBIAS Voltage Range
For optimal RON performance, make sure VIN ≤ VBIAS. The device is still functional if VIN > VBIAS but it exhibits RON
greater than what is listed in the Electrical Characteristics—VBIAS = 5 V table. See Figure 34 for an example of a
typical device. Notice the increasing RON as VIN exceeds VBIAS voltage. Never exceed the maximum voltage
rating for VIN and VBIAS.
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Application Information (continued)
TA = 25 °C
IOUT = –200 mA
Figure 34. RON vs VIN
10.2 Typical Application
This application demonstrates how the TPS22965x can be used to power downstream modules.
VOUT
VIN
Power
Supply
ON
CIN
ON
CL
RL
CT
OFF
GND
Power
Supply
GND
VBIAS
TPS22965x
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Figure 35. Powering a Downstream Module
10.2.1 Design Requirements
Table 3 shows the design parameters.
Table 3. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
3.3 V
VBIAS
5V
CL
22 µF
Maximum Acceptable Inrush Current
400 mA
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10.2.2 Detailed Design Procedure
10.2.2.1 Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (3.3 V in this
example). This charge arrives in the form of inrush current. Inrush current can be calculated using Equation 2.
Inrush Current = C × dV/dt
where
•
•
•
C is the output capacitance
dV is the output voltage
dt is the rise time
(2)
The TPS22965x offers adjustable rise time for VOUT. This feature allows the user to control the inrush current
during turn-on. The appropriate rise time can be calculated using the design requirements and the inrush current
equation. See Equation 3 and Equation 4.
400 mA = 22 µF × 3.3 V/dt
dt = 181.5 µs
(3)
(4)
To ensure an inrush current of less than 400 mA, choose a CT value that yields a rise time of more than 181.5
µs. See the oscilloscope captures in the Application Curves section for an example of how the CT capacitor can
be used to reduce inrush current.
10.2.2.2 Thermal Considerations
The maximum IC junction temperature must be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use
Equation 5 as a guideline:
PD(max) =
TJ(max) - TA
θJA
where
•
•
•
•
PD(max) is the maximum allowable power dissipation
TJ(max) is the maximum allowable junction temperature (125°C for the TPS22965x)
TA is the ambient temperature of the device
ΘJA = junction to air thermal impedance. See the Thermal Information table. This parameter is highly
dependent upon board layout.
(5)
See Figure 38, notice that the thermal vias are located under the exposed thermal pad of the device. This allows
for thermal diffusion away from the device.
20
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10.2.3 Application Curves
VBIAS = 5 V
VIN = 3.3 V
CL = 22 µF
Figure 36. Inrush Current with CT = 0 pF
VBIAS = 5 V
VIN = 3.3 V
CL = 22 µF
Figure 37. Inrush Current with CT = 220 pF
11 Power Supply Recommendations
The device is designed to operate from a VBIAS range of 2.5 V to 5.7 V and a VIN range of 0.8 V to VBIAS.
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12 Layout
12.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects
along with minimizing the case to ambient thermal impedance. The CT trace must be as short as possible to
avoid parasitic capacitance.
12.2 Layout Example
VIA to GND
Pin 1
VIN
(1)
VIN
VOUT
VOUT
GND
CT
ON
GND
VBIAS
Figure 38. Layout Recommendation
22
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
For related documentation see the following:
• Managing Inrush Current
• TPS22965EVM-023 Single 6A Load Switch
• Load Switch Thermal Considerations
• TPS22965NEVM User’s Guide
• TPS22965WDSGQ1EVM User's Guide
13.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
13.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.4 Trademarks
E2E is a trademark of Texas Instruments.
Ultrabook is a trademark of Intel.
All other trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
13.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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11-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS22965DSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
ZSA0
Samples
TPS22965DSGT
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
ZSA0
Samples
TPS22965NDSGR
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 105
ZDVI
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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