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Table of Contents
User’s Guide
TPS25210EVM: Evaluation Module for TPS25210 eFuse
ABSTRACT
This user’s guide describes the evaluation module (EVM) for the TPS25210 eFuse. The TPS25210 device
is a 2.7 V to 5.7 V, 4-A eFuse with integrated 31 mΩ FET with reverse current protection, input reverse
polarity protection, over current, inrush current protection, adjustable over current transient blanking timer,
programmable under voltage and over voltage protection.
Table of Contents
1 Introduction.............................................................................................................................................................................3
1.1 EVM Features.................................................................................................................................................................... 3
1.2 EVM Applications............................................................................................................................................................... 3
2 Description.............................................................................................................................................................................. 4
3 Schematic................................................................................................................................................................................5
4 General Configurations..........................................................................................................................................................6
4.1 Physical Access................................................................................................................................................................. 6
4.2 Test Equipment and Set up................................................................................................................................................ 8
5 Test Setup and Procedures....................................................................................................................................................9
5.1 Start up the eFuse............................................................................................................................................................10
5.2 Over Current Test.............................................................................................................................................................12
5.3 Output Hot-Short Test...................................................................................................................................................... 13
5.4 Power Up into Short Test................................................................................................................................................. 14
5.5 Overvoltage Clamp Test...................................................................................................................................................15
5.6 Reverse Current Blocking Test.........................................................................................................................................17
6 EVAL Board Assembly Drawings and Layout Guidelines................................................................................................ 18
6.1 PCB Drawings..................................................................................................................................................................18
7 Bill Of Materials (BoM)..........................................................................................................................................................20
List of Figures
Figure 3-1. TPS25210EVM eFuse Evaluation Board Schematic................................................................................................ 5
Figure 5-1. TPS25210EVM Setup with Test Equipment.............................................................................................................. 9
Figure 5-2. TPS25210x Start Up with Enable at VIN = 5 V, Cout = 220 uF, CdVdT = OPEN....................................................10
Figure 5-3. TPS25210x Inrush Current with Capacitive Load at VIN = 5 V, Cout = 690 uF, CdVdT = 3300 pF.........................11
Figure 5-4. Over Current Response of TPS25210x for 4.44-A Current Limit Setting................................................................ 12
Figure 5-5. Output Hot-Short Response of TPS25210x Device at VIN = 5 V, Cout = 10 uF, RLIM = 750 Ω............................. 13
Figure 5-6. Power Up into Output Short Response of TPS25210x Device at VIN = 5 V, Cout = 220 uF, RILM = 750 Ω,
CITIMER = 2.2 nF.................................................................................................................................................................. 14
Figure 5-7. Over Voltage Protection Response of TPS25210x Device at ROVCSEL = OPEN, Cout = 220 μF, Iout = 150
mA, VIN ramped up from 5 V to 8 V.......................................................................................................................................15
Figure 5-8. Over Voltage Protection Response of TPS25210x Device at ROVCSEL = 0 Ω, Cout = 220 μF, Iout = 120
mA, VIN ramped up from 3.3 V to 6 V....................................................................................................................................16
Figure 5-9. Reverse Current Blocking Performance on TPS25210x at VIN = 5 V, Cout = 220 μF, VOUT = 10 V Initially
Disconnected and Then Connected.......................................................................................................................................17
Figure 6-1. TPS25210EVM Board (a) Top Assembly (b) Bottom Assembly..............................................................................18
Figure 6-2. TPS25210EVM Board (a) Top Layer (b) Bottom Layer........................................................................................... 19
List of Tables
Table 2-1. TPS25210EVM eFuse Evaluation Board Options and Setting................................................................................... 4
Table 4-1. Input and Output Connector Functionality.................................................................................................................. 6
Table 4-2. Test Points Description............................................................................................................................................... 6
Table 4-3. Jumper Descriptions and Default Positions................................................................................................................ 7
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Trademarks
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Table 4-4. LED Descriptions........................................................................................................................................................ 8
Table 5-1. Default Jumper Setting for TPS25210EVM eFuse Evaluation Board......................................................................... 9
Table 7-1. TPS25210EVM BoM.................................................................................................................................................20
Trademarks
All trademarks are the property of their respective owners.
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Introduction
1 Introduction
The TPS25210EVM eFuse Evaluation Board allows reference circuit evaluation of Texas Instruments (TI)
TPS25210 eFuse. The TPS25210 device is a 2.7 V to 5.7 V, 4-A eFuse with integrated 31 mΩ FET with
reverse current protection, input reverse polarity protection, over current, inrush current protection, adjustable
over current transient blanking timer, programmable under voltage and over voltage protection.
1.1 EVM Features
General TPS25210EVM eFuse evaluation board features include:
•
•
•
•
•
•
•
•
2.7 V to 5.7 V (typ) operation
0.5 A to 4.44 A programmable current limit using onboard jumpers
Programmable output voltage slew rate control
Programmable transient current blanking timer
Programmable current limit
TVS diode for input transient protection
On-board Schottky diode at output prevents negative spike during overcurrent faults
LED status for Power Good and Input Reverse Polarity Fault indication
1.2 EVM Applications
This EVM can be use on the following applications:
•
•
•
•
•
•
•
Power MUX/ORing
Adapter input protection
Storage – eSSD/cSSD
e-Meters
Smart speakers
Headphones
USB power accessories
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Description
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2 Description
The TPS25210EVM eFuse Evaluation Board enables the evaluation of TPS25210A and TPS25210L eFuses
from TPS25210 family. The input power is applied at connector J1, while J2 provides the output connection to
the load; refer to the schematic in Figure 3-1 and EVM test setup in Figure 5-1. TVS diodes D3 provides input
protection from transient overvoltages while Schottky diode D2 provides output protection for the TPS25210
eFuses.
S1 allows U1 to be RESET or disabled. A power good (PG) indicator is provided by D5. Scaled device current
can be monitored at TP8 with a scale factor of 0.13 V/A.
Table 2-1. TPS25210EVM eFuse Evaluation Board Options and Setting
EVM Function
Performance evaluation of
TPS25210, 2.7 V to 5.7 V,
4-A eFuse
4
Vin UVLO
Threshold
Vin
OVC Threshold
ITimer
Output Slew
Rate, dVdT
4.5 V
Selectable OVC 3.8 V and 5.7 V
Selectable 0.183 ms, 1.83
ms, 18.3 ms
Selectable - 0.6
mV/us, 0.2
mV/us, 0.09
mV/us
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Current Limit
Low Setting
Hi Setting
0.5 A
4.44 A
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Schematic
3 Schematic
Figure 3-1 illustrates the EVM schematic.
TP1
VIN
TP2
VOUT
U1
J1
J2
VIN
5
EN/UVLO
D1
R1
340k
30V
OVCSEL
dVdt
1
2
R3
124k
ILM
8
PGND
GND
2
4
6
J6
GND
1
3
5
GND
R4
124k
J5
2
1
PGND
R6
100
R7
100
C6
3300pF
GND
C7
220pF
C8
2.2nF
C10
0.01uF
C9
22nF
GND
J7
10.0k
TP7
dVdt
TP8
ILM
TP9
PG
TP10
PGTH
1
2
3
R12
D5
TP6
ITIMER
1.00k
PG
VIN
GND
TP11
PGND
R13
TP12
PGND
Q1
1
PGTH
PG
ILM
dVdt
ITimer
OVCSEL
EN/UVLO
PGND
PGND
PGND
OUT
IN
2
GND
0
PGND
D6
U2
TP13
GND
D7
MBR140SFT1G
PGND
R8
GND
TP5
OVCSEL
PGND
TP3
VCC_EXT
R9
R10
R11
6.65k 1.65k 750
C11
22nF
GND
TP4
EN/UVLO
C3
220uF
D2
C4
10µF
J3
J4
2.7V - 6.5V
0.5A - 4.5A
R2
340k
PG
9
2
4
6
C5
100pF
1
PGND
PGTH
1
3
5
S1
GND
VOUT
TPS25210ARPW
2
4
6
16V
RPP
R5
845
GND
6
4
3
GND
PEC02SAAN
C2
100nF
ILM
ITIMER
dVdt
2
2
1
D4
C1
1µF
PGTH
PG
OVCSEL
10
7
PGND
OUT
EN/UVLO
2
ITimer
D3
IN
1
C12
100nF
3
2
1
1
3
5
2.7V - 6.5V
28V Abs Max
0.5A - 4.5A
BAT54WS-7-F
C13
100nF
GND
GND
PGND
Figure 3-1. TPS25210EVM eFuse Evaluation Board Schematic
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General Configurations
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4 General Configurations
4.1 Physical Access
Table 4-1 lists the TPS25210EVM eFuse Evaluation Board input and output connector functionalities. Table 4-2
and Table 4-3 describe the availability of test points and the functionalities of the jumpers . Table 4-4 describes
the functions of signal LEDs.
Table 4-1. Input and Output Connector Functionality
Connector
Label
J1
VIN(+), PGND(–)
J2
VOUT(+), PGND(–)
Description
Intput Power to the eFuse
Output
Power from the eFuse
Table 4-2. Test Points Description
6
Test Points
Label
Description
TP1
VIN
Input voltage
TP2
VOUT
TP3
VCC_EXT
External VCC voltage for Power Good indicator
TP4
EN/UVLO
EN/UVLO signal
TP5
OVCSEL
OVCSEL signal
TP6
ITIMER
TP7
dVdT
TP8
ILM
Current limit and monitor signal
TP9
PG
Power good signal
TP10
PGTH
Power good threshold signal
TP11 and TP12
PGND
Power GND signal
TP13
GND
Output voltage
ITIMER signal
Output voltage ramp control
IC GND signal
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General Configurations
Table 4-3. Jumper Descriptions and Default Positions
Jumper
Label
Description
Default Jumper Position
1-2 Position sets Output Slew Rate to 0.6 V/ms
J3
dVdT
3-4
3-4 Position sets Output Slew Rate to 0.2 V/ms
5-6 Position sets Output Slew Rate to 0.09 V/ms
J4
OVCSEL
J5
ITIMER
1-2 Position sets input OVC threshold at 3.87 V
No jumper connection sets input OVC threshold at 5.73 V
No jumper
1-2 Position sets the transient current blanking period to 0.183 ms
3-4 Position sets the transient current blanking period to 1.83 ms
3-4
5-6 Position sets the transient current blanking period to 18.3 ms
1-2 Position sets the current limit to 0.5 A
J6
ILM
3-4 Position sets the current limit to 2 A
5-6
5-6 Position sets the current limit to 4.44 A
J7
1-2 Position connects external voltage, VCC_EXT as reference for PG
VCC Connection 2-3 Position connects on board generated voltage , VCC as reference
for PG
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Table 4-4. LED Descriptions
LED
Description
D4
When ON, indicates that reverse polarity voltage is applied at the input
D5
When ON, indicates that Power Good is asserted
4.2 Test Equipment and Set up
4.2.1 POWER SUPPLIES
One adjustable power supply 0-V to 30-V output, 0-A to 10-A output current limit.
4.2.2 METERS
Minimum a Digital Multi Meter (DMM) needed.
4.2.3 OSCILLOSCOPE
A DPO2024 or equivalent, three 10x voltage probes and a DC current probe.
4.2.4 LOADS
One resistive load or equivalent which can tolerate up to 10 A DC load at 24 V and capable of the output short.
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Test Setup and Procedures
5 Test Setup and Procedures
In this user's guide, the test procedure is described for TPS25210A and TPS25210L devices. Make sure the
evaluation board has default jumper settings as shown in Table 5-1. The default under voltage lock out (UVLO)
setting is at 4.5 V for this evaluation board. Therefore, the resistances R3 and R4 should be changed to 200 kΩ
for the performance evaluation of TPS25210x device at VIN of 3.3 V.
Table 5-1. Default Jumper Setting for TPS25210EVM eFuse Evaluation Board
J3
J4
J5
J6
J7
3-4
No
jumper
3-4
5-6
2-3
Figure 5-1. TPS25210EVM Setup with Test Equipment
Follow these instructions before starting any test and repeat again before moving to next test:
•
•
•
•
Set the power supply output (VIN) to zero volts.
Turn ON the power supply and set the power supply output (VIN) to 5 V, current limit to 10 A.
Turn OFF the power supply.
Set the jumper setting on EVM to default position as shown in Table 5-1.
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Test Setup and Procedures
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5.1 Start up the eFuse
Use the following instructions to measure the inrush current during Hot-Plug event:
1.
2.
3.
4.
Set Jumper J3 position to desired slew rate as mentioned in Table 4-3.
Set the input supply voltage VIN to 5 V and current limit of 10 A.
Connect the supply between VIN and PGND points of connector J1. Enable the power supply.
Observe the waveform at VOUT (TP2) and input current with an oscilloscope to measure the slew rate and
rise time of the eFuse with a given input voltage of 5 V.
Figure 5-2 and Figure 5-3 shows example of inrush current captured on the TPS25210EVM eFuse Evaluation
Board.
Figure 5-2. TPS25210x Start Up with Enable at VIN = 5 V, Cout = 220 uF, CdVdT = OPEN
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Test Setup and Procedures
Figure 5-3. TPS25210x Inrush Current with Capacitive Load at VIN = 5 V, Cout = 690 uF, CdVdT = 3300 pF
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Test Setup and Procedures
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5.2 Over Current Test
Use the following instructions to perform over current test on TPS25210 eFuse:
1.
2.
3.
4.
Place jumper J5 to an appropriate position to obtain required blanking period as per Table 4-3.
Set the input supply voltage VIN to 5 V and current limit of 10 A and enable the power supply.
Place jumper J6 in suitable position to set required current limit as per Table 4-3.
Now apply an over load greater than the set current limit between VOUT and PGND (Use a resistive load to
apply over current).
5. The device responds to output over current condition by actively limiting the current after a user adjustable
transient fault blanking interval. During active current limit, the output voltage will drop resulting in increased
device power dissipation. If the device internal temperature exceeds the thermal shutdown threshold, the
device will turn off.
Figure 5-4 shows an example of active current limit test on the TPS25210EVM
Figure 5-4. Over Current Response of TPS25210x for 4.44-A Current Limit Setting
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Test Setup and Procedures
5.3 Output Hot-Short Test
Use the following instructions to perform output Hot-Short test:
1. Set the input supply voltage VIN to 5 V and current limit of as high as possible. Turn ON the power supply.
2. Short the output of the device for example, VOUT to PGND with a very short cable.
3. Observe the waveforms using an oscilloscope.
Figure 5-5 shows the test waveform of output hot-short on TPS25210EVM eFuse Evaluation Board.
Figure 5-5. Output Hot-Short Response of TPS25210x Device at VIN = 5 V, Cout = 10 uF, RLIM = 750 Ω
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Test Setup and Procedures
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5.4 Power Up into Short Test
Use the following instructions to perform wakeup into short test:
1. Set the input supply voltage VIN to 5 V and current limit of 10 A. Keep the power supply OFF.
2. Short the output of the device for example, VOUT to PGND with a very short cable.
3. Turn ON the power supply.
Figure 5-6 shows test waveform of power up into output short on the TPS25210EVM eFuse Evaluation Board.
Figure 5-6. Power Up into Output Short Response of TPS25210x Device at VIN = 5 V, Cout = 220 uF, RILM
= 750 Ω, CITIMER = 2.2 nF
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Test Setup and Procedures
5.5 Overvoltage Clamp Test
Use the following instructions to perform overvoltage protection test:
1. Place jumper J4 in suitable position to set required overvoltage clamp voltage as per Table 4-3.
2. Set the input supply voltage VIN to 5 V (Jumper J4 is open) or 3.3 V (Jumper J4 is shorted) and current limit
of 10 A. Apply the supply between VIN and PGND at connector J1 and enable the power supply.
3. Increase the input supply VIN from 5 V to 8V (Junper J4 is open) or from 3.3 V to 6 V (Jumper J4 is shorted)
and observe the waveforms using an oscilloscope.
Figure 5-7 and Figure 5-8 shows over voltage response on TPS25210EVM eFuse Evaluation Board.
Figure 5-7. Over Voltage Protection Response of TPS25210x Device at ROVCSEL = OPEN, Cout = 220 μF,
Iout = 150 mA, VIN ramped up from 5 V to 8 V
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Test Setup and Procedures
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Figure 5-8. Over Voltage Protection Response of TPS25210x Device at ROVCSEL = 0 Ω, Cout = 220 μF,
Iout = 120 mA, VIN ramped up from 3.3 V to 6 V
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Test Setup and Procedures
5.6 Reverse Current Blocking Test
Use the following instructions to perform reverse current blocking test:
1. Set the input supply voltage VIN to 5 V and current limit of 10 A. Enable the power supply.
2. Take another power supply, set the output voltage at 10 V, and apply between VOUT and PGND points of
connector J2.
3. Observe the input voltage, output voltage, and input current using the oscilloscope.
Figure 5-7 shows reverse current blocking performance on TPS25210EVM eFuse Evaluation Board.
Figure 5-9. Reverse Current Blocking Performance on TPS25210x at VIN = 5 V, Cout = 220 μF, VOUT = 10
V Initially Disconnected and Then Connected
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EVAL Board Assembly Drawings and Layout Guidelines
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6 EVAL Board Assembly Drawings and Layout Guidelines
6.1 PCB Drawings
Figure 6-1 shows component placement on the EVAL Board. Figure 6-2 shows PCB layout images.
Figure 6-1. TPS25210EVM Board (a) Top Assembly (b) Bottom Assembly
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EVAL Board Assembly Drawings and Layout Guidelines
Figure 6-2. TPS25210EVM Board (a) Top Layer (b) Bottom Layer
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Bill Of Materials (BoM)
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7 Bill Of Materials (BoM)
Table 7-1 lists the EVM BOM.
Table 7-1. TPS25210EVM BoM
Designator
Quantity
Value
Description
Package Reference
Part Number
Manufacturer
Printed Circuit Board
PSIL101
Any
CAP, CERM, 1 uF, 35 V, +/- 10%, X7R, 0603 0603
C1608X7R1V105K080AC
TDK
PCB
1
C1
1
1uF
C2
1
0.1uF
CAP, CERM, 0.1 uF, 50 V, +/- 10%, X7R,
0603
0603
C1608X7R1H104K080AA
TDK
C3
1
220uF
CAP, AL, 220 uF, 35 V, +/- 20%, 0.15 ohm,
SMD
SMT Radial G
EEE-FC1V221P
Panasonic
C4
1
10uF
CAP, CERM, 10 µF, 50 V,+/- 10%, X7R,
AEC-Q200 Grade 1, 1206
1206
CGA5L1X7R1H106K160AC
TDK
C5
1
100pF
CAP, CERM, 100 pF, 50 V, +/- 5%, C0G/
NP0, 0603
0603
885012006057
Wurth Elektronik
C6
1
3300pF
CAP, CERM, 3300 pF, 50 V, +/- 10%, X7R,
0603
0603
C0603X332K5RACTU
Kemet
C7
1
220pF
CAP, CERM, 220 pF, 50 V, +/- 10%, X7R,
0603
0603
C0603C221K5RACTU
Kemet
C8
1
2200pF
CAP, CERM, 2200 pF, 50 V, +/- 10%, X7R,
0603
0603
C0603C222K5RACTU
Kemet
C9, C11
2
0.022uF
CAP, CERM, 0.022 uF, 50 V, +/- 10%, X7R,
0603
0603
C0603X223K5RACTU
Kemet
C10
1
0.01uF
CAP, CERM, 0.01 uF, 50 V, +/- 5%, C0G/
NP0, 0603
0603
GRM1885C1H103JA01D
MuRata
C12, C13
2
0.1uF
CAP, CERM, 0.1 uF, 50 V, +/- 10%, X7R,
0603
0603
06035C104KAT2A
AVX
D1
1
30V
Diode, Zener, 30 V, 500 mW, SOD-123
SOD-123
DDZ30D-7
Diodes Inc.
D2
1
30V
Diode, Schottky, 30 V, 3 A, SMA
SMA
B330A-13-F
Diodes Inc.
D3
1
16V
Diode, TVS, Bi, 16 V, SMB
SMB
SMBJ16CA
Littlefuse
D4
1
LED-RPP
LED, Red, SMD
LED-0805- Red
LTST-C170KRKT
Lite-On
D5
1
LED-PG
LED, Green, SMD
LED-0805-Green
LTST-C170KGKT
Lite-On
D6
1
30V
Diode, Schottky, 30 V, 0.2 A, SOD-323
SOD-323
BAT54WS-7-F
Diodes Inc.
D7
1
40V
Diode, Schottky, 40 V, 1 A, SOD-123FL
SOD-123FL
MBR140SFT1G
ON Semiconductor
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Bill Of Materials (BoM)
Table 7-1. TPS25210EVM BoM (continued)
Designator
Quantity
Value
Description
Package Reference
Part Number
Manufacturer
H1, H2, H3, H4
4
Machine Screw, Round, #4-40 x 1/4, Nylon,
Philips panhead
Screw
NY PMS 440 0025 PH
B&F Fastener
Supply
H5, H6, H7, H8
4
Standoff, Hex, 0.5"L #4-40 Nylon
Standoff
1902C
Keystone
J1, J2
2
Terminal Block, 2x1, 5.08mm, TH
10.16x15.2x9mm
282841-2
TE Connectivity
J3, J5, J6
3
Header, 100mil, 3x2, Tin, TH
3x2 Header
PEC03DAAN
Sullins Connector
Solutions
J4
1
Header, 100mil, 2x1, Tin, TH
2x1 Header
PEC02SAAN
Sullins Connector
Solutions
J7
1
Header, 100mil, 3x1, Tin, TH
3x1 Header
PEC03SAAN
Sullins Connector
Solutions
Q1
1
60V
MOSFET, N-CH, 60 V, 115 A, SOT-23
SOT-23
2N7002
Fairchild
Semiconductor
R1, R2
2
340k
RES, 340 k, 1%, 0.1 W, 0603
0603
RC0603FR-07340KL
Yageo
R3, R4
2
124k
RES, 124 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603
0603
CRCW0603124KFKEA
Vishay-Dale
R5
1
845
RES, 845, 1%, 0.1 W, 0603
0603
RC0603FR-07845RL
Yageo
R6, R7
2
100
RES, 100, 1%, 0.1 W, 0603
0603
RC0603FR-07100RL
Yageo
R8
1
10k
RES, 10.0 k, 0.1%, 0.1 W, 0603
0603
RG1608P-103-B-T5
Susumu
R9
1
6.65k
RES, 6.65 k, 1%, 0.1 W, 0603
0603
RC0603FR-076K65L
Yageo
R10
1
1.65k
RES, 1.65 k, 1%, 0.1 W, 0603
0603
RC0603FR-071K65L
Yageo
R11
1
750
RES, 750, 1%, 0.1 W, 0603
0603
RC0603FR-07750RL
Yageo
R12
1
1.00k
RES, 1.00 k, 1%, 0.1 W, 0603
0603
RC0603FR-071KL
Yageo
R13
1
0
RES, 0, 5%, 0.1 W, 0603
0603
ERJ-3GEY0R00V
Panasonic
Electronic
S1
1
SWITCH TACTILE SPST-NO 0.05A 12V
3x1.6x2.5mm
B3U-1000P
Omron Electronic
Components
SH-J3, SH-J4, SHJ5, SH-J6, SH-J7
5
Shunt, 100mil, Flash Gold, Black
Closed Top 100mil Shunt
SPC02SYAN
Sullins Connector
Solutions
TP11, TP12, TP13
3
Test Point, Multipurpose, Black, TH
Black Multipurpose
Testpoint
5011
Keystone
TP4, TP5, TP6, TP7,
TP8, TP9, TP10
7
Test Point, Multipurpose, White, TH
White Multipurpose
Testpoint
5012
Keystone
1x2
SLVUC34 – MARCH 2021
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TPS25210EVM: Evaluation Module for TPS25210 eFuse
Copyright © 2022 Texas Instruments Incorporated
21
Bill Of Materials (BoM)
www.ti.com
Table 7-1. TPS25210EVM BoM (continued)
Designator
Quantity
Value
Description
Package Reference
Part Number
Manufacturer
TP1, TP2
2
Test Point, Multipurpose, Red, TH
Red Multipurpose Testpoint 5010
Keystone
TP3
1
Test Point, Multipurpose, Orange, TH
Orange Multipurpose
Testpoint
5013
Keystone
U1
1
TPS25210
TPS25210, 2.7- 6.5, 4 A, 30 mO Reverse
Current Blocking eFuse with Input Reverse
Polarity Protection
VQFN-HR10
TPS25210ARPW
Texas Instruments
U2
1
LM3480
100 mA, Quasi Low-Dropout Linear Voltage
Regulator, 3-pin SOT-23, Pb-Free
SOT-23
LM3480IM3-3.3/NOPB
Texas Instruments
FID1, FID2, FID3,
FID4, FID5, FID6
0
Fiducial mark. There is nothing to buy or
mount.
N/A
N/A
N/A
22
TPS25210EVM: Evaluation Module for TPS25210 eFuse
SLVUC34 – MARCH 2021
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