TPS51225, TPS51225B, TPS51225C
www.ti.com
SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
Dual Synchronous, Step-Down Controller with 5-V and 3.3-V LDOs
Check for Samples: TPS51225, TPS51225B, TPS51225C
FEATURES
APPLICATIONS
1
•
•
Input Voltage Range: 5.5 V to 24 V
• Notebook Computers
Output Voltages: 5 V and 3.3 V (Adjustable
• Netbook, Tablet Computers
Range ±10%)
DESCRIPTION
Built-in, 100-mA, 5-V and 3.3-V LDOs
The TPS51225/B/C is a cost-effective, dualClock Output for Charge-Pump
synchronous buck controller targeted for notebook
±1% Reference Accuracy
system-power supply solutions. It provides 5-V and
Adaptive On-time D-CAP™ Mode Control
3.3-V LDOs and requires few external components.
The 260-kHz VCLK output can be used to drive an
Architecture with 300kHz/355kHz Frequency
external charge pump, generating gate drive voltage
Setting
for the load switches without reducing the main
Auto-skip Light Load Operation (TPS51225/C)
converter efficiency. The TPS51225/B/C supports
OOA Light Load Operation (TPS51225B)
high efficiency, fast transient response and provides a
combined power-good signal. Adaptive on-time, DInternal 0.8-ms Voltage Servo Soft-Start
CAP™ control provides convenient and efficient
Low-Side RDS(on) Current Sensing Scheme with
operation. The device operates with supply input
4500 ppm/°C Temperature Coefficient
voltage ranging from 5.5 V to 24 V and supports
Built-in Output Discharge Function
output voltages of 5.0 V and 3.3 V. The
TPS51225/B/C is available in a 20-pin, 3 mm × 3
Separate Enable Input for Switchers
mm, QFN package and is specified from –40°C to
(TPS51225/B/C)
85°C.
Dedicated OC Setting Terminals
Power Good Indicator
OVP/UVP/OCP Protection
Non-latch UVLO/OTP Protection
20-Pin, 3 mm × 3 mm, QFN (RUK)
ORDERING INFORMATION (1)
2
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
ORDERABLE
DEVICE NUMBER
TPS51225RUKR
TPS51225RUKT
TPS51225BRUKR
TPS51225BRUKT
TPS51225CRUKR
TPS51225CRUKT
(1)
ENABLE
FUNCTION
SKIP MODE
ALWAYS ON-LDO
EN1/ EN2
Auto-skip
VREG3
EN1/ EN2
OOA
VREG3
EN1/ EN2
Auto-skip
VREG3 & VREG5
PACKAGE
PLASTIC Quad
Flat Pack
(20 pin QFN)
OUTPUT
SUPPLY
QUANTITY
Tape and Reel
3000
Mini reel
250
Tape and Reel
3000
Mini reel
250
Tape and Reel
3000
Mini reel
250
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
D-CAP, Out-of-Audio are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
TPS51225, TPS51225B, TPS51225C
SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TYPICAL APPLICATION DIAGRAM (TPS51225/TPS51225B)
VIN
5.5 V to 24 V
TPS51225
TPS51225 B
VIN
VOUT
5V
VBST1
VBST2
DRVH1
DRVH 2
SW1
VOUT
3.3 V
SW2
DRVL1
DRVL2
VO1
VFB1
VFB2
CS1
CS2
VCLK
VOUT
15 V
EN-5V
PGOOD
EN1
5V
PGOOD
EN2
VREG5
EN 3.3 V
VREG3
3.3-V Always ON
1 mF
1 mF
UDG-11182
TYPICAL APPLICATION DIAGRAM (TPS51225C)
VIN
5.5 V to 24 V
TPS51225C
VIN
VOUT
5V
VBST1
VBST2
DRVH1
DRVH 2
SW1
DRVL1
VOUT
3.3 V
SW2
DRVL2
VO1
VFB1
EN 5 V
CS1
CS2
EN1
PGOOD
VCLK
VOUT
15 V
5V
Always ON
VREG5
1 mF
VFB2
PGOOD
EN2
EN 3.3 V
VREG3
3.3-V Always ON
1 mF
UDG-12001
2
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SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VALUE
Input voltage (2)
MIN
MAX
VBST1, VBST2
–0.3
32
VBST1, VBST2 (3)
–0.3
6
SW1, SW2
–6.0
26
VIN
–0.3
26
EN1, EN2
–0.3
6
VFB1, VFB2
–0.3
3.6
VO1
–0.3
6
DRVH1, DRVH2
–6.0
32
–0.3
6
DRVH1, DRVH2 (3)
DRVH1, DRVH2
Output voltage (2)
Electrostatic
discharge
(3)
–2.5
6
DRVL1, DRVL2
(pulse width < 20 ns)
–0.3
6
DRVL1, DRVL2 (pulse width < 20 ns)
–2.5
6
PGOOD, VCLK, VREG5
–0.3
6
VREG3, CS1, CS2
–0.3
3.6
HBM QSS 009-105 (JESD22-A114A)
2
CDM QSS 009-147 (JESD22-C101B.01)
1
Junction temperature, TJ
150
Storage temperature, TST
–55
(1)
(2)
(3)
UNIT
V
V
kV
°C
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the network ground terminal unless otherwise noted
Voltage values are with respect to SW terminals.
THERMAL INFORMATION
THERMAL METRIC
TPS51225
TPS51225B
TPS51225C
(1)
UNITS
20-PIN RUK
θJA
Junction-to-ambient thermal resistance
94.1
θJCtop
Junction-to-case (top) thermal resistance
58.1
θJB
Junction-to-board thermal resistance
64.3
ψJT
Junction-to-top characterization parameter
31.8
ψJB
Junction-to-board characterization parameter
58.0
θJCbot
Junction-to-case (bottom) thermal resistance
5.9
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Copyright © 2012, Texas Instruments Incorporated
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3
TPS51225, TPS51225B, TPS51225C
SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
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RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
Supply voltage
Input voltage (1)
Output voltage (1)
VIN
4
TYP MAX
5.5
24
VBST1, VBST2
–0.1
30
VBST1, VBST2 (2)
–0.1
5.5
SW1, SW2
–5.5
24
EN1, EN2
–0.1
5.5
VFB1, VFB2
–0.1
3.5
VO1
–0.1
5.5
DRVH1, DRVH2
–5.5
30
DRVH1, DRVH2 (2)
–0.1
5.5
DRVL1, DRVL2
–0.1
5.5
PGOOD, VCLK, VREG5
–0.1
5.5
VREG3, CS1, CS2
–0.1
3.5
–40
85
Operating free-air temperature, TA
(1)
(2)
MIN
UNIT
V
V
°C
All voltage values are with respect to the network ground terminal unless otherwise noted.
Voltage values are with respect to the SW terminal.
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SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range, VVIN= 12 V, VVO1= 5 V, VVFB1= VVFB2= 2 V, VEN1= VEN2= 3.3 V (unless otherwise
noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
IVIN1
VIN supply current-1
TA = 25°C, No load, VVO1=0 V
IVIN2
VIN supply current-2
TA = 25°C, No load
IVO1
VO1 supply current
TA = 25°C, No load, VVFB1= VVFB2=2.05 V
IVIN(STBY)
VIN stand-by current
TA = 25°C, No load, VVO1= 0 V,
VEN1= VEN2= 0 V
IVIN(STBY)
VIN stand-by current
TA = 25°C, No load, VVO1=0 V, VEN1=VEN2=0V
(TPS51225C)
TPS51225
TPS51225B
860
μA
30
μA
900
μA
95
μA
180
μA
INTERNAL REFERENCE
VFBx
TA = 25°C
VFB regulation voltage
1.99
2.00
2.01
V
1.98
2.00
2.02
V
VREG5 OUTPUT
No load, VVO1= 0 V, TA = 25°C
VVREG5
VREG5 output voltage
4.9
5.0
5.1
VVIN> 7 V , VVO1= 0 V, IVREG5< 100 mA
4.85
5.00
5.10
VVIN > 5.5 V , VVO1= 0 V, IVREG5< 35 mA
4.85
5.00
5.10
100
150
mA
1.8
Ω
IVREG5
VREG5 current limit
VVIN= 7 V, VVO1= 0 V, VVREG5= 4.5 V
RV5SW
5-V switch resistance
VVO1= 5 V, IVREG5= 50 mA, TA = 25°C
V
VREG3 OUTPUT
VVREG3
IVREG3
VREG3 output voltage
VREG3 current limit
No load, VVO1= 0 V, TA = 25°C
3.267
3.300
3.333
VVIN > 7 V , VVO1= 0 V, IVREG3< 100 mA
3.217
3.300
3.383
5.5 V < VVIN , VVO1= 0 V, IVREG3< 35 mA
3.234
3.300
3.366
VVIN > 5.5 V, VVO1 = 0 V, IVREG3< 35 mA, 0°C ≤ TA ≤ 85°C
3.267
3.300
3.333
VVIN > 5.5 V, VVO1 = 5 V, IVREG3< 35 mA, 0°C ≤ TA ≤ 85°C
3.333
3.267
3.300
VVO1= 0 V, VVREG3= 3.0 V, VVIN= 7 V
100
150
V
mA
DUTY CYCLE and FREQUENCY CONTROL
fSW1
CH1 frequency (1)
TA = 25°C, VVIN= 20 V
240
300
360
kHz
fSW2
CH2 frequency (1)
TA = 25°C, VVIN= 20 V
280
355
430
kHz
tOFF(MIN)
Minimum off-time
TA = 25°C
200
300
500
ns
MOSFET DRIVERS
Source, (VVBST – VDRVH) = 0.25 V, (VVBST – VSW) = 5 V
3.0
Sink, (VDRVH – VSW) = 0.25 V, (VVBST – VSW) = 5 V
1.9
Source, (VVREG5 – VDRVL) = 0.25 V, VVREG5 = 5 V
3.0
Sink, VDRVL = 0.25 V, VVREG5= 5 V
0.9
DRVH-off to DRVL-on
12
DRVL-off to DRVH-on
20
Boost switch on-resistance
TA = 25°C, IVBST = 10 mA
13
VBST leakage current
TA = 25°C
RDRVH
DRVH resistance
RDRVL
DRVL resistance
tD
Dead time
Ω
Ω
ns
INTERNAL BOOT STRAP SWITCH
RVBST
(ON)
IVBSTLK
Ω
1
µA
CLOCK OUTPUT
RVCLK
(PU)
VCLK on-resistance (pull-up)
TA = 25°C
10
RVCLK
(PD)
VCLK on-resistance (pull-down)
TA = 25°C
10
Clock frequency
TA = 25°C
260
fCLK
(1)
Ω
kHz
Ensured by design. Not production tested.
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ELECTRICAL CHARACTERISTICS
over operating free-air temperature range, VVIN= 12 V, VVO1= 5 V, VVFB1= VVFB2= 2 V, VEN1= VEN2= 3.3 V (unless otherwise
noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
OUTPUT DISCHARGE
RDIS1
CH1 discharge resistance
TA = 25°C, VVO1 = 0.5 V
VEN1 = VEN2 = 0 V
35
Ω
RDIS2
CH2 discharge resistance
TA = 25°C, VSW2 = 0.5 V
VEN1 = VEN2 = 0 V
75
Ω
RDIS2
CH2 discharge resistance
TA = 25°C, VSW2 = 0.5 V, VEN1 = VEN2 = 0 V (TPS51225C)
70
Ω
SOFT START OPERATION
tSS
Soft-start time
From ENx="Hi" and VVREG5 > VUVLO5 to VOUT = 95%
0.91
ms
tSSRAMP
Soft-start time (ramp-up)
VOUT= 0% to VOUT = 95%, VVREG5 = 5 V
0.78
ms
POWER GOOD
Lower (rising edge of PG-in)
VPGTH
92.5%
Hysteresis
PG threshold
95.0%
Upper (rising edge of PG-out)
107.5% 110.0% 112.5%
Hysteresis
5%
6.5
IPGMAX
PG sink current
VPGOOD = 0.5 V
IPGLK
PG leak current
VPGOOD = 5.5 V
tPGDEL
PG delay
From PG lower threshold (95%=typ) to PG flag high
97.5%
5%
mA
1
0.7
µA
ms
CURRENT SENSING
ICS
CS source current
TA = 25°C, VCS= 0.4 V
TCCS
CS current temperature coefficient (1)
On the basis of 25°C
VCS
CS Current limit setting range
VZC
Zero cross detection offset
9
10
11
4500
0.2
TA = 25°C
–1
1
μA
ppm/°C
2
V
3
mV
LOGIC THRESHOLD
VENX(ON)
EN threshold high-level
SMPS on level
VENX(OFF)
EN threshold low-level
SMPS off level
0.3
1.6
IEN
EN input current
VENx= 3.3 V
–1
V
V
1
µA
OUTPUT OVERVOLTAGE PROTECTION
VOVP
OVP trip threshold
tOVPDLY
OVP propagation delay
112.5% 115.0% 117.5%
TA = 25°C
0.5
µs
OUTPUT UNDERVOLTAGE PROTECTION
VUVP
UVP trip Threshold
tUVPDLY
UVP prop delay
tUVPENDLY
UVP enable delay
55%
60%
65%
250
µs
From ENx ="Hi", VVREG5 = 5 V
1.35
ms
Wake up
4.58
V
0.5
V
4.38
V
0.4
V
Wake up
3.15
V
Hysteresis
0.15
V
Shutdown temperature
155
UVLO
VUVL0VIN
VUVLO5
VUVLO3
VIN UVLO Threshold
Hysteresis
Wake up
VREG5 UVLO Threshold
Hysteresis
VREG3 UVLO Threshold
OVER TEMPERATURE PROTECTION
TOTP
(1)
6
OTP threshold (1)
Hysteresis
10
°C
Ensured by design. Not production tested.
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SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
DEVICE INFORMATION
3
VFB2
4
CS2
5
VCLK
SW1
VBST1
DRVH1
16
TPS51225
TPS51225B
TPS51225C
Thermal Pad
6
7
8
9
10
DRVH2
VREG3
17
VBST2
2
18
SW2
VFB1
19
PGOOD
1
20
EN2
CS1
EN1
RUK PACKAGE
20 PINS
(TOP VIEW)
15
DRVL1
14
VO1
13
VREG5
12
VIN
11
DRVL2
PIN FUNCTIONS
PIN NO.
TPS51225
TPS51225B
TPS51225C
I/O
1
O
Sets the channel 1 OCL trip level.
CS2
5
O
Sets the channel 2OCL trip level.
DRVH1
16
O
High-side driver output
DRVH2
10
O
High-side driver output
DRVL1
15
O
Low-side driver output
DRVL2
11
O
Low-side driver output
EN1
20
I
Channel 1 enable.
EN2
6
I
Channel 2 enable.
PGOOD
7
O
Power good output flag. Open drain output. Pull up to external rail via a resistor
SW1
18
O
Switch-node connection.
SW2
8
O
Switch-node connection.
VBST1
17
I
VBST2
9
I
Supply input for high-side MOSFET (bootstrap terminal). Connect capacitor from this pin to SW
terminal.
VCLK
19
O
Clock output for charge pump.
VFB1
2
I
VFB2
4
I
VIN
12
I
Power conversion voltage input. Apply the same voltage as drain voltage of high-side MOSFETs of
channel 1 and channel 2.
VO1
14
I
Output voltage input, 5-V input for switch-over.
VREG3
3
O
3.3-V LDO output.
VREG5
13
O
5-V LDO output.
Thermal
pad
—
—
GND terminal, solder to the ground plane
NAME
CS1
DESCRIPTION
Voltage feedback Input
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FUNCTIONAL BLOCK DIAGRAM (TPS51225/B/C)
TPS51225
TPS51225B
TPS51225C
VIN
+
+
155°C/145°C
4.5 V/4.0 V
VO1
+
VREG5
+
+
+
2V
+
VREG3
Osc
VCLK
EN1
VBST1
EN2
VDRV
VIN VDD VO_OK
DRVH 1
SW1
DRVL 1
Switcher
Controller
(CH1)
VFB1
CS1
VDD VDRV
EN
FAULT
FAULT
REF
REF
PGOOD
PGND
GND
VIN
Switcher
Controller
(CH2)
PGOOD
DCHG
DCHG
VBST2
DRVH 2
EN
SW2
DRVL 2
VFB2
GND
PGND
CS2
PGOOD
GND
(Thermal Pad )
8
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UDG-12002
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TPS51225, TPS51225B, TPS51225C
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SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
SWITCHER CONTROLLER BLOCK DIAGRAM
TPS51225
TPS51225B
TPS51225C
VDD
+
UV
VREF –40%
VREF +5%/10%
+
Control Logic
+
OV
+
VREF –5%/10%
VREF +15%
VFB
EN
+
+
REF
SS Ramp Comp
PWM
VO_OK
VBST
SKIP
HS
VIN
DRVH
SW
XCON
OC
CS
10 µA
VDRV
+
+
LS
NOC
One-Shot
+
Discharge
GND
+
ZC
DRVL
PGND
DCHG
PGOOD
PGOOD
FAULT
UDG-12007
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DETAILED DESCRIPTION
PWM Operations
The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width
modulation (PWM) controller. It supports a proprietary D-CAP™ mode. D-CAP™ mode does not require external
conpensation circuit and is suitable for low external component count configuration when used with appropriate
amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous high-side MOSFET is turned on, or enters the ON state. This
MOSFET is turned off, or enters the ‘OFF state, after the internal, one-shot timer expires. The MOSFET is turned
on again when the feedback point voltage, VVFB, decreased to match the internal 2-V reference. The inductor
current information is also monitored and should be below the overcurrent threshold to initiate this new cycle. By
repeating the operation in this manner, the controller regulates the output voltage. The synchronous low-side
(rectifying) MOSFET is turned on at the beginning of each OFF state to maintain a minimum of conduction loss.
The low-side MOSFET is turned off before the high-side MOSFET turns on at next switching cycle or when
inductor current information detects zero level. This enables seamless transition to the reduced frequency
operation during light-load conditions so that high efficiency is maintained over a broad range of load current.
Adaptive On-Time/ PWM Frequency Control
Bacause the TPS51225/B/C does not have a dedicated oscillator for control loop on board, switching cycle is
controlled by the adaptive on-time circuit. The on-time is controlled to meet the target switching frequency by
feed-forwarding the input and output voltage into the on-time one-shot timer. The target switching frequency is
varied according to the input voltage to achieve higher duty operation for lower input voltage application. The
switching frequency of CH1 (5-V output) is 300 kHz during continuous conduction mode (CCM) operation when
VIN = 20 V. The CH2 (3.3-V output) is 355 kHz during CCM when VIN = 20 V.
Light Load Condition in Auto-Skip Operation (TPS51225/C)
The TPS51225/C automatically reduces switching frequency during light-load conditions to maintain high
efficiency. This reduction of frequency is achieved smoothly and without an increase in output voltage ripple. A
more detailed description of this operation is as follows. As the output current decreases from heavy-load
condition, the inductor current is also reduced and eventually approaches valley zero current, which is the
boundary between continuous conduction mode and discontinuous conduction mode. The rectifying MOSFET is
turned off when this zero inductor current is detected. As the load current further decreases, the converter runs in
discontinuous conduction mode and it takes longer and longer to discharge the output capacitor to the level that
requires the next ON cycle. The ON time is maintained the same as that in the heavy-load condition. In reverse,
when the output current increase from light load to heavy load, the switching frequency increases to the preset
value as the inductor current reaches to the continuous conduction. The transition load point to the light load
operation IOUT(LL) (i.e. the threshold between continuous and discontinuous conduction mode) can be calculated
as shown in Equation 1.
IOUT(LL ) =
(VIN - VOUT )´ VOUT
1
´
2 ´ L ´ fSW
VIN
where
•
fSW is the PWM switching frequency
(1)
Switching frequency versus output current during light-load conditions is a function of inductance (L), input
voltage (VIN) and output voltage (VOUT), but it decreases almost proportional to the output current from the
IOUT(LL).
10
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SLUSAV0B – JANUARY 2012 – REVISED SEPTEMBER 2012
Light-Load Condition in Out-of-Audio™ Operation (TPS51225B)
Out-of-Audio™ (OOA) light-load mode is a unique control feature that keeps the switching frequency above
acoustic audible frequencies toward a virtual no-load condition. During Out-of-Audio™ operation, the OOA
control circuit monitors the states of both MOSFETs and forces them to transition into the ON state if both of
MOSFETs are off for more than 40 μs. When both high-side and low-side MOSFETs are off for 40 µs during a
light-load condition, the operation mode is changed to FCCM. This mode change initiates the low-side MOSFET
on and pulls down the output voltage. Then, the high-side MOSFET is turned on and stops switching again.
Table 1. SKIP Mode Operation (TPS51225/B/C)
SKIP MODE OPERATION
TPS51225
Auto-skip
TPS51225B
OOA
TPS51225C
Auto-skip
D-CAP™ Mode
From small-signal loop analysis, a buck converter using D-CAP™ mode can be simplified as shown in Figure 1.
TPS51225
TPS51225B
TPS51225C
Switching Modulator
VIN
DRVH
R1
R2
L
VFB
PWM
+
+
Control
Logic
and
Divider
VOUT
DRVL
IIND
IC
IOUT
VREF
ESR
R LOAD
Voltage
Divider
VC
COUT
Output
Capacitor
UDG-12010
Figure 1. Simplifying the Modulator
The output voltage is compared with internal reference voltage after divider resistors, R1 and R2. The PWM
comparator determines the timing to turn onthe high-side MOSFET. The gain and speed of the comparator is
high enough to keep the voltage at the beginning of each ON cycle substantially constant. For the loop stability,
the 0dB frequency, ƒ0, defined in Equation 2 must be lower than 1/4 of the switching frequency.
f
1
£ SW
f0 =
2p ´ ESR ´ COUT
4
(2)
As ƒ0 is determined solely by the output capacitor characteristics, the loop stability during D-CAP™ mode is
determined by the capacitor chemistry. For example, specialty polymer capacitors have output capacitance in the
order of several hundred micro-Farads and ESR in range of 10 milli-ohms. These yield an f0 value on the order
of 100 kHz or less and the loop is stable. However, ceramic capacitors have ƒ0 at more than 700 kHz, which is
not suitable for this operational mode.
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Enable and Powergood
VREG3 is an always-on regulator (TPS51225/B), VREG3/VREG5 are always-on regulators (TPS51225C), when
the input voltage is beyond the UVLO threshold it turns ON. VREG5 is turned ON when either EN1 or EN2
enters the ON state. The VCLK signal initiates when EN1 enters the ON state (TPS51225/B/C). Enable states
are shown in Table 2 through Table 3.
Table 2. Enabling/PGOOD State (TPS51225/B)
EN1
EN2
VREG5
VREG3
CH1 (5Vout)
CH2 (3.3Vout)
VCLK
PGOOD
OFF
OFF
OFF
ON
OFF
OFF
OFF
Low
Low
ON
OFF
ON
ON
ON
OFF
ON
OFF
ON
ON
ON
OFF
ON
OFF
Low
ON
ON
ON
ON
ON
ON
ON
High
Table 3. Enabling/PGOOD State (TPS51225C)
EN1
EN2
VREG5
VREG3
CH1 (5Vout)
CH2 (3.3Vout)
VCLK
PGOOD
OFF
OFF
ON
ON
OFF
OFF
OFF
Low
ON
OFF
ON
ON
ON
OFF
ON
Low
OFF
ON
ON
ON
OFF
ON
OFF
Low
ON
ON
ON
ON
ON
ON
ON
High
VIN-UVLO_threshold
VIN
VREG3
EN_threshold
EN1
VREG5-UVLO_threshold
VREG5
95% of VOUT
Soft-Start Time (tSS)
Soft-Start Time
(tSS(ramp))
5-V VOUT
EN_threshold
EN2
95% of Vout
3.3-V VOUT
Soft-Start Time (tSS)
PGOOD
Delay
tPGDEL
Soft-Start Time
(tSS(ramp))
PGOOD
UDG-12013
Figure 2. TPS51225 and TPS51225B Timing
12
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VIN-UVLO_threshold
VIN
2.4 V
VREG3
VREG5
EN_threshold
EN1
95% of VOUT
Soft-Start Time (tSS)
Soft-Start Time
(tSS(ramp))
5-V VOUT
EN_threshold
EN2
95% of Vout
3.3-V VOUT
Soft-Start Time (tSS)
PGOOD
Delay
tPGDEL
Soft-Start Time
(tSS(ramp))
PGOOD
UDG-12015
Figure 3. TPS51225C Timing
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Soft-Start and Discharge
The TPS51225/B/C operates an internal, 0.8-ms, voltage servo soft-start for each channel. When the ENx pin
becomes higher than the enable threshold voltage, an internal DAC begins ramping up the reference voltage to
the PWM comparator. Smooth control of the output voltage is maintained during start-up. When ENx becomes
lower than the lower level of threshold voltage, TPS51225/B/C discharges outputs using internal MOSFETs
through VO1 (CH1) and SW2 (CH2).
VREG5/VREG3 Linear Regulators
There are two sets of 100-mA standby linear regulators which output 5 V and 3.3 V, respectively. The VREG5
pin provides the current for the gate drivers. The VREG3 pin functions as the main power supply for the analog
circuitry of the device. VREG3 is an Always ON LDO and TPS51225C has Always ON VREG5. (see Table 2 and
Table 3)
Add ceramic capacitors with a value of 1 µF or larger (X5R grade or better) placed close to the VREG5 and
VREG3 pins to stabilize LDOs.
The VREG5 pin switchover function is asserted when three conditions are present:
• CH1 internal PGOOD is high
• CH1 is not in OCL condition
• VO1 voltage is higher than VREG5-1V
In
•
•
•
this switchover condition, three things occur:
the internal 5-V, LDO regulator is shut off
the VREG5 output is connected to VO1 by internal switchover MOSFET
VREG3 input pass is changed from VIN to VO1
VCLK for Charge Pump
The 260-kHz VCLK signal can be used in the charge pump circuit. The VCLK signal becomes available when
EN1. The VCLK driver is driven by VO1 voltage. In a design that does not require VCLK output, leave the VCLK
pin open.
Overcurrent Protection
TPS51225/B/C has cycle-by-cycle over current limiting control. The inductor current is monitored during the OFF
state and the controller maintains the OFF state during the inductor current is larger than the overcurrent trip
level. In order to provide both good accuracy and cost effective solution, TPS51225/B/C supports temperature
compensated MOSFET RDS(on) sensing. The CSx pin should be connected to GND through the CS voltage
setting resistor, RCS. The CSx pin sources CS current (ICS) which is 10 µA typically at room temperature, and the
CSx terminal voltage (VCS= RCS × ICS) should be in the range of 0.2 V to 2 V over all operation temperatures.
The trip level is set to the OCL trip voltage (VTRIP) as shown in Equation 3.
R ´I
VTRIP = CS CS + 1 mV
8
(3)
The inductor current is monitored by the voltage between GND pin and SWx pin so that SWx pin should be
connected to the drain terminal of the low-side MOSFET properly.The CS pin current has a 4500 ppm/°C
temperature slope to compensate the temperature dependency of the RDS(on). GND is used as the positive
current sensing node so that GND should be connected to the source terminal of the low-side MOSFET.
As the comparison is done during the OFF state, VTRIP sets the valley level of the inductor current. Thus, the load
current at the overcurrent threshold, IOCP, can be calculated as shown in Equation 4.
IIND(ripple )
(VIN - VOUT )´ VOUT
V
V
1
IOCP = TRIP +
= TRIP +
´
RDS(on )
2
RDS(on ) 2 ´ L ´ fSW
VIN
(4)
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output
voltage tends to fall down. Eventually, it ends up with crossing the undervoltage protection threshold and
shutdown both channels.
14
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Output Overvoltage/Undervoltage Protection
TPS51225/B/C asserts the overvoltage protection (OVP) when VFBx voltage reaches OVP trip threshold level.
When an OVP event is detected, the controller changes the output target voltage to 0 V. This usually turns off
DRVH and forces DRVL to be on. When the inductor current begins to flow through the low-side MOSFET and
reaches the negative OCL, DRVL is turned off and DRVH is turned on. After the on-time expires, DRVH is turned
off and DRVL is turned on again. This action minimizes the output node undershoot due to LC resonance. When
the VFBx reaches 0V, the driver output is latched as DRVH off, DRVL on. The undervoltage protection (UVP)
latch is set when the VFBx voltage remains lower than UVP trip threshold voltage for 250 µs or longer. In this
fault condition, the controller latches DRVH low and DRVL low and discharges the outputs. UVP detection
function is enabled after 1.35 ms of SMPS operation to ensure startup.
Undervoltage Lockout (UVLO) Protection
TPS51225/B/C has undervoltage lock out protection at VIN, VREG5 and VREG3. When each voltage is lower
than their UVLO threshold voltage, both SMPS are shut-off. They are non-latch protections.
Over-Temperature Protection
TPS51225/B/C features an internal temperature monitor. If the temperature exceeds the threshold value
(typically 155°C), TPS51225/B/C is shut off including LDOs. This is non-latch protection.
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External Components Selection
The external components selection is relatively simple for a design using D-CAP™ mode.
Step 1. Determine the Value of R1 and R2
The recommended R2 value is between 10 kΩ and 20 kΩ. Determine R1 using Equation 5.
R1 =
(VOUT - 0.5 ´ VRIPPLE - 2.0 ) ´ R2
2.0
(5)
Step 2. Choose the Inductor
The inductance value should be determined to give the ripple current of approximately 1/3 of maximum output
current. Larger ripple current increases output ripple voltage, improves signal:noise ratio, and helps ensure stable
operation.
L=
1
IIND(ripple ) ´ fSW
´
(V
IN(max ) - VOUT
)´ V
OUT
VIN(max )
=
3
IOUT(max ) ´ fSW
´
(V
IN(max ) - VOUT
)´ V
OUT
VIN(max)
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak
inductor current before saturation. The peak inductor current can be estimated as shown in Equation 7.
IIND(peak ) =
)
(
VIN(max ) - VOUT ´ VOUT
VTRIP
1
+
´
RDS(on ) L ´ fSW
VIN(max )
(7)
Step 3. Choose Output Capacitor(s)
Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. Determine ESR to meet
required ripple voltage above. A quick approximation is as shown in Equation 8.
V
´ 20mV ´ (1 - D) 20mV ´ L ´ fSW
ESR = OUT
=
2 V ´ IIND(ripple )
2V
where
•
•
D as the duty-cycle factor
the required output ripple voltage slope is approximately 20 mV per tSW (switching period) in terms of VFB
terminal
(8)
VVOUT
Slope (1)
Jitter
(2)
Slope (2)
Jitter
20 mV
(1)
VREF
VREF +Noise
tON
tOFF
UDG-12012
Figure 4. Ripple Voltage Slope and Jitter Performance
16
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Layout Considerations
Good layout is essential for stable power supply operation. Follow these guidelines for an efficient PCB layout.
Placement
• Place voltage setting resistors close to the device pins.
• Place bypass capacitors for VREG5 and VREG3 close to the device pins.
Routing (Sensitive analog portion)
• Use small copper space for VFBx. There are short and narrow traces to avoid noise coupling.
• Connect VFB resistor trace to the positive node of the output capacitor. Routing inner layer away from power
traces is recommended.
• Use short and wide trace from VFB resistor to vias to GND (internal GND plane).
Routing (Power portion)
• Use wider/shorter traces of DRVL for low-side gate drivers to reduce stray inductance.
• Use the parallel traces of SW and DRVH for high-side MOSFET gate drive in a same layer or on adjoin
layers, and keep them away from DRVL.
• Use wider/ shorter traces between the source terminal of the high-side MOSFET and the drain terminal of the
low-side MOSFET
• Thermal pad is the GND terminal of this device. Five or more vias with 0.33-mm (13-mils) diameter connected
from the thermal pad to the internal GND plane should be used to have strong GND connection and help heat
dissipation.
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TYPICAL CHARACTERISTICS
1.6
60
VIN Supply Current 2 (µA)
VIN Supply Current 1 (mA)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−40 −25 −10
5
20 35 50 65 80
Junction Temperature (°C)
95
40
30
20
10
0
−40 −25 −10
110 125
G001
Figure 5. VIN Supply Current 1 vs. Junction Temperature
5
20 35 50 65 80
Junction Temperature (°C)
95
110 125
G002
Figure 6. VIN Supply Current 2 vs. Junction Temperature
1.6
300
VIN Stand−By Current (µA)
1.4
VO1 Supply Current 1 (mA)
50
1.2
1.0
0.8
0.6
0.4
0.2
250
200
150
100
50
TPS51225C Only
0.0
−40 −25 −10
5
20 35 50 65 80
Junction Temperature (°C)
95
0
−40 −25 −10
110 125
G003
20
310
18
300
16
290
14
12
10
8
6
4
2
0
−40 −25 −10
110 125
G004
280
270
260
250
240
230
220
5
20 35 50 65 80
Junction Temperature (°C)
95
110 125
G005
Figure 9. CS Source Current vs. Junction Temperature
18
95
Figure 8. VIN Stand-By Current vs. Junction Temperature
VCLK Frequency (kHz)
CS Source Current (µA)
Figure 7. VO1 Supply Current 1 vs. Junction Temperature
5
20 35 50 65 80
Junction Temperature (°C)
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210
−40 −25 −10
5
20 35 50 65 80
Junction Temperature (°C)
95
110 125
G006
Figure 10. Clock Frequency vs. Junction Temperature
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TYPICAL CHARACTERISTICS (continued)
100
90
Out−of−Audio
VVOUT = 5 V
80
80
Efficiency (%)
Efficiency (%)
90
100
Auto−Skip
VVOUT = 5 V
70
60
70
60
50
40
30
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
50
40
0.001
0.01
0.1
Output Current (A)
1
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
20
10
0
0.001
10
Figure 11. Efficiency vs. Output Current
Output Volage (V)
Output Volage (V)
5.10
5.00
4.95
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
4.90
4.85
0.001
10
G008
0.01
0.1
Output Current (A)
1
Out−of−Audio
VVOUT = 5 V
5.05
5.00
4.95
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
4.90
4.85
0.001
10
0.01
0.1
Output Current (A)
G014
Figure 13. Load Regulation
1
10
G015
Figure 14. Load Regulation
100
100
Auto−Skip
VVOUT = 3.3 V
90
Efficiency (%)
70
60
50
70
60
50
40
30
40
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
30
20
0.001
Out−of_Audio
VVOUT = 3.3 V
80
80
Efficiency (%)
1
5.15
Auto−Skip
VVOUT = 5 V
5.05
90
0.1
Output Current (A)
Figure 12. Efficiency vs. Output Current
5.15
5.10
0.01
G007
0.01
0.1
Output Current (A)
1
Figure 15. Efficiency vs. Output Current
Copyright © 2012, Texas Instruments Incorporated
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
20
10
10
0
0.001
0.01
0.1
Output Current (A)
G010
1
10
G011
Figure 16. Efficiency vs. Output Current
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TYPICAL CHARACTERISTICS (continued)
3.43
3.43
Out−of−Audio
VVOUT = 3.3 V
3.38
Output Volage (V)
Output Volage (V)
Auto−skip
VVOUT = 3.3 V
3.33
3.28
3.23
0.001
0.1
Output Current (A)
1
3.33
3.28
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
0.01
3.38
3.23
0.001
10
Switching Frequency (kHz)
Switching Frequency (kHz)
200
150
100
50
0.01
0.1
Output Current (A)
1
200
150
100
Out−of−Audio
VVOUT = 5 V
0.01
0.1
Output Current (A)
1
10
G017
Figure 20. Switching Frequency vs. Output Current
450
400
Switching Frequency (kHz)
Switching Frequency (kHz)
G013
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
G016
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
300
250
200
150
100
Auto−Skip
VVOUT = 3.3 V
50
0.01
0.1
Output Current (A)
1
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350
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
300
250
200
150
100
Out−of−Audio
VVOUT = 3.3 V
50
10
0
0.001
0.01
G018
Figure 21. Switching Frequency vs. Output Current
20
10
250
0
0.001
10
450
0
0.001
300
50
Auto−Skip
VVOUT = 5 V
Figure 19. Switching Frequency vs. Output Current
350
1
350
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
250
400
0.1
Output Current (A)
Figure 18. Load Regulation
350
0
0.001
0.01
G012
Figure 17. Load Regulation
300
VVIN = 8 V
VVIN = 12 V
VVIN = 20 V
0.1
Output Current (A)
1
10
G019
Figure 22. Switching Frequency vs. Output Current
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TYPICAL CHARACTERISTICS (continued)
VOUT1 (2 V/div)
VOUT1 (2 V/div)
VOUT2 (2 V/div)
VOUT2 (2 V/div)
PGOOD (5 V/div)
EN1 = EN2 (5 V/div)
PGOOD (5 V/div)
EN1 = EN2 (5 V/div)
Time (10 ms/div)
Time (400 µs/div)
Figure 23. Start-Up
VVIN = 12 V
Figure 24. Output Discharge
VOUT1 (50 mV/div)
I OUT 3A ßà 8 A
VVIN = 12 V
VOUT1 (50 mV/div)
I OUT 3A ßà 8 A
VOUT2 0 A( 50 mV/div)
VOUT2 0 A ( 50 mV/div)
I IND1
(5 A/div)
I IND1
(5 A/div)
SW1 (10 V/div)
SW1 (10 V/div)
Time (100 µs/div)
Time (100 µs/div)
Figure 25. 5-V Load Transient
Figure 26. 3.3-V Load Transient
500
500
VOUT = 5 V
IOUT = 6 A
400
350
300
250
200
150
100
50
0
VOUT = 3.3 V
IOUT = 6 A
450
Switching Frequency (kHz)
Switching Frequency (kHz)
450
400
350
300
250
200
150
100
50
5
10
15
Input Voltage (V)
20
25
Figure 27. Switching Frequency vs. Input Voltage
Copyright © 2012, Texas Instruments Incorporated
0
5
10
15
Input Voltage (V)
G000
20
25
G000
Figure 28. Switching Frequency vs. Input Voltage
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APPLICATION DIAGRAM (TPS51225/TPS51225B/TPS51225C)
VIN
2.2 W
L1
10 µF x 2
U1
TPS51225
TPS51225 B
12 VIN TPS51225C
10 µF x 2
0.1 µF
Q1
VOUT
5 V-8A
VBST2
16 DRVH 1
DRVH 2 10
18 SW1
C1
0.1 µF
17 VBST1
SW2
2.2 W
9
Q2
L2
VOUT
3.3 V - 8A
8
C2
Q3
15 DRVL 1
Q4
DRVL 2 11
6.57 kW
14 VO1
15.3 kW
51 kW
10 kW
2
VFB1
VFB2
4
1
CS1
CS2
5
PGOOD
7
PGOOD
EN2
6
EN 3.3 V
VREG3
3
VREG
(3.3-V LDO)
47 kW
19 VCLK
0.1 µF
0.1 µF
EN 5V
Charge-pump
Output
VREG5
(5-V LDO)
D1
13 VREG5
10 kW
1 µF
1 µF
0.1 µF
0.1 µF
20 EN1
UDG-12008
GND
Table 4. Key External Components (APPLICATION DIAGRAM (TPS51225/TPS51225B/TPS51225C))
REFERENCE
DESIGNATOR
22
FUNCTION
MANUFACTURER
PART NUMBER
L1
Output Inductor (5-VOUT)
Toko
FDVE1040-3R3M
L2
Output Inductor (3.3-VOUT)
Toko
FDVE1040-2R2M
C1
Output Capacitor (5-VOUT)
SANYO
6TPE330MIL x 2
C2
Output Capacitor (3.3-VOUT)
SANYO
4TPE470MIL
Q1
High-side MOSFET (5-VOUT)
Fairchild
FDMC7692
Q2
High-side MOSFET (3.3-VOUT)
Fairchild
FDMC7692
Q3
Low-side MOSFET (5-VOUT)
Fairchild
FDMC7672
Q4
Low-side MOSFET (3.3-VOUT)
Fairchild
FDMC7672
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Changes from Original (January 2012) to Revision A
•
Page
Deleted references to obsolete option TPS51225A throughout document .......................................................................... 1
Changes from Revision A (JUNE 2012) to Revision B
Page
•
Added specification for additional VVREG3 output voltage condition in ELECTIICAL CHARACTERISTICS table ................. 5
•
Added clarity to the VREG5/VREG3 Linear Regulators section. ........................................................................................ 14
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PACKAGE OPTION ADDENDUM
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20-May-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS51225BRUKR
ACTIVE
WQFN
RUK
20
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
1225B
Samples
TPS51225BRUKT
ACTIVE
WQFN
RUK
20
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
1225B
Samples
TPS51225CRUKR
ACTIVE
WQFN
RUK
20
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
1225C
Samples
TPS51225CRUKT
ACTIVE
WQFN
RUK
20
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
1225C
Samples
TPS51225RUKR
ACTIVE
WQFN
RUK
20
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
51225
Samples
TPS51225RUKT
ACTIVE
WQFN
RUK
20
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
51225
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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