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TPS54620
SLVS949F – MAY 2009 – REVISED MAY 2017
TPS54620 4.5-V to 17-V Input, 6-A, Synchronous, Step-Down SWIFT™ Converter
1 Features
3 Description
•
•
•
•
•
•
•
•
The TPS54620 in thermally enhanced 3.50 mm ×
3.50 mm QFN package is a full featured 17-V, 6-A,
synchronous, step-down converter which is optimized
for small designs through high efficiency and
integrating the high-side and low-side MOSFETs.
Further space savings are achieved through current
mode control, which reduces component count, and
by selecting a high switching frequency, reducing the
footprint of the inductor.
1
•
•
•
•
•
Integrated 26 mΩ and 19 mΩ MOSFETs
Split Power Rail: 1.6 V to 17 V on PVIN
200-kHz to 1.6-MHz Switching Frequency
Synchronizes to External Clock
0.8 V ±1% Voltage Reference Overtemperature
Low 2-µA Shutdown Quiescent Current
Monotonic Start-Up into Prebiased Outputs
–40°C to 150°C Operating Junction Temperature
Range
Adjustable Slow Start and Power Sequencing
Power Good Output Monitor for Undervoltage and
Overvoltage
Adjustable Input Undervoltage Lockout
For SWIFT™ Documentation, Visit
http://www.ti.com/swift
Create a Custom Design Using the TPS54620
With the WEBENCH Power Designer
2 Applications
•
•
•
High Density Distributed Power Systems
High Performance Point of Load Regulation
Broadband, Networking and Optical
Communications Infrastructure
The output voltage start-up ramp is controlled by the
SS/TR pin which allows operation as either a standalone power supply or in tracking situations. Power
sequencing is also possible by correctly configuring
the enable and the open-drain power good pins.
Cycle-by-cycle current limiting on the high-side FET
protects the device in overload situations and is
enhanced by a low-side sourcing current limit which
prevents current runaway. There is also a low-side
sinking current limit that turns off the low-side
MOSFET to prevent excessive reverse current.
Thermal shutdown disables the part when die
temperature exceeds thermal shutdown temperature.
Device Information(1)
PART NUMBER
TPS54620
PACKAGE
BODY SIZE (NOM)
VQFN (14)
3.50 mm × 3.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
Efficiency vs Load Current
100
PVIN
VIN
TPS54620
BOOT
VIN
Cin
8V
95
Cboot
90
85
EN
PH
PWRGD
VSENSE
SS/TR
RT/CLK
GND
COMP
Css
Rrt C2
R3
C1
Co
R1
17 V
12 V
Efficiency - %
VOUT
Lo
80
75
70
65
R2
Exposed
Thermal
Pad
VOUT = 3.3 V
Fsw = 480 kHz
60
55
50
0
1
2
3
Load Current - A
4
5
6
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54620
SLVS949F – MAY 2009 – REVISED MAY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configurations and Functions .......................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
5
6
6
8
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
11
12
12
19
8
Application and Implementation ........................ 24
8.1 Application Information............................................ 24
8.2 Typical Application ................................................. 24
9 Power Supply Recommendations...................... 34
10 Layout................................................................... 34
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Estimated Circuit Area ..........................................
Thermal Consideration..........................................
34
35
36
36
11 Device and Documentation Support ................. 37
11.1
11.2
11.3
11.4
11.5
11.6
Device Support......................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
37
37
37
37
37
37
12 Mechanical, Packaging, and Orderable
Information ........................................................... 38
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (June 2016) to Revision F
Page
•
Updated data sheet text to our latest documentation and translations standards ................................................................. 1
•
Removed all references to the SwitcherPro™ Software Tool because it is no longer available for this part ........................ 1
•
Moved storage temperature ratings to the Absolute Maximum Ratings table........................................................................ 5
•
Changed Handling Ratings table to ESD Ratings .................................................................................................................. 5
•
Changed RHY package to RHL in the Thermal Information table ......................................................................................... 6
•
Changed RGY values in the Thermal Information table......................................................................................................... 6
•
Updated packages in the last bullet point of Layout Guidelines........................................................................................... 34
•
Added information to the last list item in Layout Guidelines................................................................................................. 34
Changes from Revision D (October 2014) to Revision E
Page
•
Added recommended layout guide lines for sensitive components and the output sensing trace to the Layout
Guidelines section. ............................................................................................................................................................... 34
•
Added Receiving Notification of Documentation Updates and Community Resources sections. ........................................ 37
Changes from Revision C (April 2011) to Revision D
Page
•
Added the Device Information table, Handling Ratings table, the Recommended Operating Conditions table, and the
Thermal Information table....................................................................................................................................................... 1
•
Changed the Absolute Maximum Ratings for BOOT-PH, MAX value From: 7 V To: 7.7 V .................................................. 5
•
Changed Equation 28 From: C7(nF) To: C5(nF).................................................................................................................. 27
Changes from Revision B (October 2010) to Revision C
•
2
Page
Changed From separate RHL and RGY packages To a combined RHL and RGY package ................................................ 4
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SLVS949F – MAY 2009 – REVISED MAY 2017
Changes from Revision A (January 2010) to Revision B
•
Page
Changed Small Signal Model for Frequency Compensation section ................................................................................... 18
Changes from Original (May 2009) to Revision A
Page
•
Changed title from 17 V Input, 6 A Output, Synchronous Step Down Switcher with Integrated FET (SWIFT) ..................... 1
•
Changed PowerPAD to Exposed Thermal Pad...................................................................................................................... 4
•
Changed Changed the Absolute Maximum Ratings for EN, MAX value From: 3 V To: 6 V.................................................. 5
•
Changed minimum switching frequency min value from 180 to 160...................................................................................... 7
•
Changed minimum switching frequency max value from 220 to 240..................................................................................... 7
•
Added "Type 3" block around C11 ....................................................................................................................................... 19
•
Changed PCB Layout graphic .............................................................................................................................................. 35
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TPS54620
SLVS949F – MAY 2009 – REVISED MAY 2017
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5 Pin Configurations and Functions
RHL and RGY Packages
14-Pin VQFN
(Top View)
RT/CLK
1
PWRGD
14
GND 2
13 BOOT
GND 3
PVIN 4
PVIN 5
12 PH
Exposed
Thermal Pad
(15)
11 PH
10 EN
VIN 6
9 SS/TR
7
VSENSE
8
COMP
Pin Functions
PIN
NAME
NO.
DESCRIPTION
I/O (1)
1
I
Automatically selects between RT mode and CLK mode. An external timing resistor adjusts the
switching frequency of the device; in CLK mode, the device synchronizes to an external clock.
GND
2, 3
G
Return for control circuitry and low-side power MOSFET.
PVIN
4, 5
P
Power input. Supplies the power switches of the power converter.
VIN
6
P
Supplies the control circuitry of the power converter.
VSENSE
7
I
Inverting input of the gm error amplifier.
COMP
8
O
Error amplifier output, and input to the output switch current comparator. Connect frequency
compensation to this pin.
SS/TR
9
O
Slow-start and tracking. An external capacitor connected to this pin sets the internal voltage reference
rise time. The voltage on this pin overrides the internal reference. It can be used for tracking and
sequencing.
RT/CLK
EN
10
I
Enable pin. Float to enable. Adjust the input undervoltage lockout with two resistors.
PH
11, 12
O
Switch node.
BOOT
13
I
A bootstrap cap is required between BOOT and PH. The voltage on this cap carries the gate drive
voltage for the high-side MOSFET.
PWRGD
14
G
Power Good fault pin. Asserts low if output voltage is low because of thermal shutdown, dropout, overvoltage, EN shutdown, or during slow start.
Exposed
Thermal
PAD
15
G
Thermal pad of the package and signal ground and it must be soldered down for proper operation.
(1)
4
I = input, O = output, G = GND, P = Power
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SLVS949F – MAY 2009 – REVISED MAY 2017
6 Specifications
6.1 Absolute Maximum Ratings (1)
Input voltage
Output voltage
MIN
MAX
UNIT
VIN
–0.3
20
V
PVIN
–0.3
20
V
EN
–0.3
6
V
BOOT
–0.3
27
V
VSENSE
–0.3
3
V
COMP
–0.3
3
V
PWRGD
–0.3
6
V
SS/TR
–0.3
3
V
RT/CLK
–0.3
6
V
BOOT-PH
0
7.7
V
PH
–1
20
V
PH 10ns Transient
–3
20
V
–0.2
0.2
V
Vdiff (GND to exposed thermal pad)
±100
µA
PH
Current Limit
A
PH
Current Limit
A
PVIN
Current Limit
A
±200
µA
–0.1
5
mA
Operating junction temperature
–40
150
°C
Storage temperature, Tstg
–65
150
°C
Source current
Sink current
RT/CLK
COMP
PWRGD
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage
4.5
17
V
PVIN
Power stage input voltage
1.6
17
V
0
6
A
–40
150
°C
Output current
TJ
Operating junction temperature
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6.4 Thermal Information
TPS54620
THERMAL METRIC (1)
RGY (VQFN)
RHL (VQFN)
14 PINS
14 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
40.1
40.1
°C/W
RθJCtop
Junction-to-case (top) thermal resistance
34.4
34.4
°C/W
RθJB
Junction-to-board thermal resistance
11.4
11.4
°C/W
ψJT
Junction-to-top characterization parameter
0.5
0.5
°C/W
ψJB
Junction-to-board characterization parameter
11.4
11.4
°C/W
RθJCbot
Junction-to-case (bottom) thermal resistance
1.8
1.8
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
TJ = –40°C to 150°C, VIN = 4.5 V to 17 V, PVIN = 1.6 V to 17 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage
1.6
17
V
VIN operating input voltage
4.5
17
V
4.5
V
VIN internal UVLO threshold
VIN rising
4
VIN internal UVLO hysteresis
150
VIN shutdown supply Current
EN = 0 V
VIN operating—nonswitching supply current
VSENSE = 810 mV
mV
2
5
μA
600
800
μA
1.21
1.26
V
ENABLE AND UVLO (EN PIN)
Enable threshold
Rising
Enable threshold
Falling
Input current
Hysteresis current
1.10
1.17
V
EN = 1.1 V
1.15
μA
EN = 1.3 V
3.4
μA
VOLTAGE REFERENCE
Voltage reference
0 A ≤ IOUT ≤ 6 A
0.792
0.8
0.808
V
MOSFET
High-side switch resistance
BOOT-PH = 3 V
32
60
mΩ
High-side switch resistance (1)
BOOT-PH = 6 V
26
40
mΩ
Low-side Switch Resistance (1)
VIN = 12 V
19
30
mΩ
ERROR AMPLIFIER
Error amplifier Transconductance (gm)
–2 μA < ICOMP < 2 μA, V(COMP) = 1 V
Error amplifier DC gain
VSENSE = 0.8 V
Error amplifier source/sink
V(COMP) = 1 V, 100-mV input overdrive
1000
Start switching threshold
1300
μMhos
3100
V/V
±110
μA
0.25
COMP to Iswitch gm
V
16
A/V
CURRENT LIMIT
High-side switch current limit threshold
8
11
A
Low-side switch sourcing current limit
7
10
A
2.3
A
Low-side switch sinking current limit
(1)
6
Measured at pins
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SLVS949F – MAY 2009 – REVISED MAY 2017
Electrical Characteristics (continued)
TJ = –40°C to 150°C, VIN = 4.5 V to 17 V, PVIN = 1.6 V to 17 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
160
175
°C
10
°C
THERMAL SHUTDOWN
Thermal shutdown
Thermal shutdown hysteresis
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
Minimum switching frequency
Rrt = 240 kΩ (1%)
160
200
240
kHz
Switching frequency
Rrt = 100 kΩ (1%)
400
480
560
kHz
Maximum switching frequency
Rrt = 29 kΩ (1%)
1440
1600
1760
kHz
Minimum pulse width
20
RT/CLK high threshold
RT/CLK low threshold
RT/CLK falling edge to PH rising edge delay
ns
2
V
0.8
Measured at 500 kHz with RT resistor in series
Switching frequency range (RT mode set point
and PLL mode)
V
66
200
ns
1600
kHz
135
ns
PH (PH PIN)
Minimum on-time
Measured at 90% to 90% of VIN, 25°C, IPH = 2 A
Minimum off-time
BOOT-PH ≥ 3 V
94
0
ns
BOOT (BOOT PIN)
BOOT-PH UVLO
2.1
3
V
SLOW START AND TRACKING (SS/TR PIN)
SS charge current
SS/TR to VSENSE matching
2.3
μA
V(SS/TR) = 0.4 V
29
60
mV
VSENSE falling (Fault)
91
% Vref
VSENSE rising (Good)
94
% Vref
VSENSE rising (Fault)
109
% Vref
VSENSE falling (Good)
106
POWER GOOD (PWRGD PIN)
VSENSE threshold
Output high leakage
VSENSE = Vref, V(PWRGD) = 5.5 V
Output low
I(PWRGD) = 2 mA
Minimum VIN for valid output
V(PWRGD) < 0.5 V at 100 μA
Minimum SS/TR voltage for PWRGD
30
0.6
% Vref
100
nA
0.3
V
1
V
1.4
V
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6.6 Typical Characteristics
30
40
VIN = 12 V
RDS(on) − On Resistance − mW
RDS(on) − On Resistance − mW
VIN = 12 V
35
30
25
20
−50
−25
0
25
50
75
100
125
27
24
21
18
15
−50
150
−25
Figure 1. High-Side RDS(on) vs Temperature
50
75
100
125
150
Figure 2. Low-Side RDS(on) vs Temperature
490
fO − Oscillator Frequency − kHz
0.805
Vref − Voltage Resistance − V
25
TJ − Junction Temperature - ° C
TJ − Junction Temperature − °C
0.803
0.801
0.799
0.797
0.795
−50
−25
0
25
50
75
100
125
RT = 100 kΩ
485
480
475
470
−50
150
TJ − Junction Temperature − °C
−25
0
25
50
75
100
125
150
TJ − Junction Temperature − °C
Figure 4. Oscillator Frequency vs Temperature
N
μ
Isd – Shutdown Quiescent Current – mA
Figure 3. Voltage Reference vs Temperature
Figure 5. Shutdown Quiescent Current vs Input Voltage
8
0
Figure 6. EN Pin Hysteresis Current vs Temperature
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Typical Characteristics (continued)
1.220
μ
En Pin UVLO Threshold − V
VIN = 12 V
1.215
1.210
1.205
1.200
−50
−25
°C
25
50
75
100
125
150
TJ − Junction Temperature − °C
Figure 8. Pin UVLO Threshold vs Temperature
Figure 7. Pin Pullup Current vs Temperature
2.5
800
ISS − Slow Start Charge Current − mA
Non-Switching Operating Quiescent Current − mA
0
TJ = −40°C
700
TJ = −25°C
TJ = 150°C
600
500
2.4
2.3
2.2
2.1
−50
400
3
6
9
12
−25
0
25
50
75
100
125
150
15
TJ − Junction Temperature − °C
VI − Input Voltage − V
Figure 9. Non-Switching Operating Quiescent Current (VIN)
vs Input Voltage
Figure 10. Slow Start Charge Current vs Temperature
120
PWRGD Threshold Current − mA
(SS/TR - Vsense) Offset − V
0.05
0.04
0.03
0.02
0.01
−50
−25
0
25
50
75
100
125
150
VIN = 12 V
VSENSE Rising
110
VSENSE Falling
100
VSENSE Rising
90
VSENSE Falling
80
−50
TJ − Junction Temperature − °C
−25
0
25
50
75
100
125
150
TJ − Junction Temperature − °C
Figure 11. (SS/TR - VSENSE) Offset vs Temperature
Figure 12. PWRGD Threshold vs Temperature
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Typical Characteristics (continued)
120
Minimum Controllable On-Time − ns
IcI − Current Limit Threshold − A
13
12
11
10
TJ = −40°C
9
TJ = 25°C
TJ = 150°C
8
7
6
5
9
13
110
100
90
80
70
−50
5
1
VIN = 12 V
IOUT = 2 A
17
−25
0
25
50
75
100
125
150
TJ − Junction Temperature − °C
VI − Input Voltage − V
Ω
Figure 14. Minimum Controllable On-Time vs Temperature
BOOT-PH UVLO Threshold – V
Figure 13. High-Side Current Limit Threshold vs Input
Voltage
°C
Figure 15. Minimum Controllable Duty Ratio vs Junction
Temperature
10
Figure 16. BOOT-PH UVLO Threshold vs Temperature
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7 Detailed Description
7.1 Overview
The device is a 17-V, 6-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To
improve performance during line and load transients, the device implements a constant frequency peak current
mode control that also simplifies external frequency compensation. The wide switching frequency of 200 kHz to
1600 kHz allows for efficiency and size optimization when selecting the output filter components. The switching
frequency is adjusted using a resistor-to-ground on the RT/CLK pin. The device also has an internal phase lock
loop (PLL) controlled by the RT/CLK pin that can be used to synchronize the switching cycle to the falling edge
of an external system clock.
The device has been designed for safe monotonic start-up into prebiased loads. The default start-up is when VIN
is typically 4.0 V. The EN pin has an internal pullup current source that can be used to adjust the input voltage
undervoltage lockout (UVLO) with two external resistors. In addition, the EN pin can be floating for the device to
operate with the internal pullup current. The total operating current for the device is approximately 600 μA when
not switching and under no load. When the device is disabled, the supply current is typically less than 2 μA.
The integrated MOSFETs allow for high efficiency power supply designs with continuous output currents up to 6
amperes. The MOSFETs have been sized to optimize efficiency for lower duty cycle applications.
The device reduces the external component count by integrating the boot recharge circuit. The bias voltage for
the integrated high-side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor
voltage is monitored by a BOOT to PH UVLO (BOOT-PH UVLO) circuit allowing PH pin to be pulled low to
recharge the boot capacitor. The device can operate at 100% duty cycle as long as the boot capacitor voltage is
higher than the preset BOOT-PH UVLO threshold which is typically 2.1 V. The output voltage can be stepped
down to as low as the 0.8-V voltage reference (Vref).
The device has a power good comparator (PWRGD) with hysteresis which monitors the output voltage through
the VSENSE pin. The PWRGD pin is an open-drain MOSFET which is pulled low when the VSENSE pin voltage
is less than 91% or greater than 109% of the reference voltage Vref and asserts high when the VSENSE pin
voltage is 94% to 106% of the Vref.
The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing
during power up. A small value capacitor or resistor divider should be coupled to the pin for slow start or critical
power supply sequencing requirements.
The device is protected from output overvoltage, overload, and thermal fault conditions. The device minimizes
excessive output overvoltage transients by taking advantage of the overvoltage circuit power good comparator.
When the overvoltage comparator is activated, the high-side MOSFET is turned off and prevented from turning
on until the VSENSE pin voltage is lower than 106% of the Vref. The device implements both high-side MOSFET
overload protection and bidirectional low-side MOSFET overload protections which help control the inductor
current and avoid current runaway. The device also shuts down if the junction temperature is higher than thermal
shutdown trip point. The device is restarted under control of the slow-start circuit automatically when the junction
temperature drops 10°C typically below the thermal shutdown trip point.
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7.2 Functional Block Diagram
PWRGD
VIN
EN
Shutdown
Ip
Ih
Enable
Comparator
Thermal
Shutdown
PVIN PVIN
UVLO
Shutdown
UV
Shutdown
Logic
Logic
Enable
Threshold
OV
Boot
Charge
Current
Sense
Minimum Clamp
Pulse Skip
ERROR
AMPLIFIER
VSENSE
BOOT
Boot
UVLO
SS/TR
HS MOSFET
Current
Comparator
Voltage
Reference
Power Stage
& Deadtime
Control
Logic
PH
PH
Slope
Compensation
VIN
Overload Recovery
and
Clamp
Oscillator
with PLL
Regulator
LS MOSFET
Current Limit
Current
Sense
GND
GND
COMP
RT/CLK
Exposed Thermal Pad
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7.3 Feature Description
7.3.1 Fixed Frequency PWM Control
The device uses a adjustable fixed frequency, peak current mode control. The output voltage is compared
through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier which drives
the COMP pin. An internal oscillator initiates the turnon of the high-side power switch. The error amplifier output
is converted into a current reference which compares to the high-side power switch current. When the power
switch current reaches current reference generated by the COMP voltage level the high-side power switch is
turned off and the low-side power switch is turned on.
7.3.2 Continuous Current Mode Operation (CCM)
As a synchronous buck converter, the device normally works in CCM (Continuous Conduction Mode) under all
load conditions.
12
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Feature Description (continued)
7.3.3 VIN and Power VIN Pins (VIN and PVIN)
The device allows for a variety of applications by using the VIN and PVIN pins together or separately. The VIN
pin voltage supplies the internal control circuits of the device. The PVIN pin voltage provides the input voltage to
the power converter system.
If tied together, the input voltage for VIN and PVIN can range from 4.5 V to 17 V. If using the VIN separately from
PVIN, the VIN pin must be between 4.5 V and 17 V, and the PVIN pin can range from as low as 1.6 V to 17 V. A
voltage divider connected to the EN pin can adjust the either input voltage UVLO appropriately. Adjusting the
input voltage UVLO on the PVIN pin helps to provide consistent power up behavior.
7.3.4 Voltage Reference
The voltage reference system produces a precise ±1% voltage reference over temperature by scaling the output
of a temperature stable bandgap circuit.
7.3.5 Adjusting the Output Voltage
The output voltage is set with a resistor divider from the output (VOUT) to the VSENSE pin. TI recommends
using 1% tolerance or better divider resistors. Referring to the application schematic of Figure 34, start with a 10
kΩ for R6 and use Equation 1 to calculate R5. To improve efficiency at light loads consider using larger value
resistors. If the values are too high the regulator is more susceptible to noise and voltage errors from the
VSENSE input current are noticeable.
Vo - Vref
R5 =
R6
Vref
where
•
Vref = 0.8V
(1)
The minimum output voltage and maximum output voltage can be limited by the minimum on time of the highside MOSFET and bootstrap voltage (BOOT-PH voltage) respectively. More discussions are located in Minimum
Output Voltage and Bootstrap Voltage (BOOT) and Low Dropout Operation.
7.3.6 Safe Start-Up into Prebiased Outputs
The device has been designed to prevent the low-side MOSFET from discharging a prebiased output. During
monotonic prebiased start-up, the low-side MOSFET is not allowed to sink current until the SS/TR pin voltage is
higher than 1.4 V.
7.3.7 Error Amplifier
The device uses a transconductance error amplifier. The error amplifier compares the VSENSE pin voltage to the
lower of the SS/TR pin voltage or the internal 0.8-V voltage reference. The transconductance of the error
amplifier is 1300 μA/V during normal operation. The frequency compensation network is connected between the
COMP pin and ground.
7.3.8 Slope Compensation
The device adds a compensating ramp to the switch current signal. This slope compensation prevents subharmonic oscillations. The available peak inductor current remains constant over the full duty cycle range.
7.3.9 Enable and Adjusting Undervoltage Lockout
The EN pin provides electrical on/off control of the device. When the EN pin voltage exceeds the threshold
voltage, the device starts operation. If the EN pin voltage is pulled below the threshold voltage, the regulator
stops switching and enters low Iq state.
The EN pin has an internal pullup current source, allowing the user to float the EN pin for enabling the device. If
an application requires controlling the EN pin, use either open-drain or open-collector output logic to interface
with the pin.
The device implements internal UVLO circuitry on the VIN pin. The device is disabled when the VIN pin voltage
falls below the internal VIN UVLO threshold. The internal VIN UVLO threshold has a hysteresis of 150 mV.
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Feature Description (continued)
If an application requires either a higher UVLO threshold on the VIN pin or a secondary UVLO on the PVIN in
split-rail applications, then the EN pin can be configured as shown in Figure 17, Figure 18, and Figure 19. When
using the external UVLO function, TI recommends setting the hysteresis to be greater than 500 mV.
The EN pin has a small pullup current Ip which sets the default state of the pin to enable when no external
components are connected. The pullup current is also used to control the voltage hysteresis for the UVLO
function because it increases by Ih when the EN pin crosses the enable threshold. The UVLO thresholds can be
calculated using Equation 2 and Equation 3.
TPS54620
VIN
ip
ih
R1
R2
EN
Copyright © 2016, Texas Instruments Incorporated
Figure 17. Adjustable VIN Undervoltage Lockout
TPS54620
PVIN
ip
ih
R1
R2
EN
Copyright © 2016, Texas Instruments Incorporated
Figure 18. Adjustable PVIN Undervoltage Lockout, VIN ≥ 4.5 V
TPS54620
PVIN
VIN
ip
ih
R1
R2
EN
Copyright © 2016, Texas Instruments Incorporated
Figure 19. Adjustable VIN and PVIN Undervoltage Lockout
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Feature Description (continued)
æV
ö
VSTART ç ENFALLING ÷ - VSTOP
è VENRISING ø
R1 =
æ V
ö
Ip ç1 - ENFALLING ÷ + Ih
VENRISING ø
è
R2 =
VSTOP
(2)
R1´ VENFALLING
- VENFALLING + R1(Ip + Ih )
where
•
•
•
•
Ih = 3.4 μA
Ip = 1.15 μA
VENRISING = 1.21 V
VENFALLING = 1.17 V
(3)
7.3.10 Adjustable Switching Frequency and Synchronization (RT/CLK)
The RT/CLK pin can be used to set the switching frequency of the device in two modes.
In RT mode, a resistor (RT resistor) is connected between the RT/CLK pin and GND. The switching frequency of
the device is adjustable from 200 kHz to 1600 kHz by placing a maximum of 240 kΩ and minimum of 29 kΩ,
respectively. In CLK mode, an external clock is connected directly to the RT/CLK pin. The device is synchronized
to the external clock frequency with PLL.
The CLK mode overrides the RT mode. The device is able to detect the proper mode automatically and switch
from the RT mode to CLK mode.
7.3.11 Slow Start (SS/TR)
The device uses the lower voltage of the internal voltage reference or the SS/TR pin voltage as the reference
voltage and regulates the output accordingly. A capacitor on the SS/TR pin to ground implements a slow-start
time. The device has an internal pullup current source of 2.3 μA that charges the external slow-start capacitor.
The calculations for the slow-start time (Tss, 10% to 90%) and slow-start capacitor (Css) are shown in
Equation 4. The voltage reference (Vref) is 0.8 V and the slow-start charge current (Iss) is 2.3 μA.
t SS (ms) =
Css (nF) ´ Vref (V)
Iss (µA)
(4)
When the input UVLO is triggered, the EN pin is pulled below 1.21 V, or a thermal shutdown event occurs, the
device stops switching and enters low current operation. At the subsequent power up when the shutdown
condition is removed, the device does not start switching until it has discharged its SS/TR pin to ground ensuring
proper soft-start behavior.
7.3.12 Power Good (PWRGD)
The PWRGD pin is an open-drain output. When the VSENSE pin is between 94% and 106% of the internal
voltage reference the PWRGD pin pulldown is deasserted and the pin floats. TI recommends using a pullup
resistor between the values of 10 kΩ and 100 kΩ to a voltage source that is 5.5 V or less. The PWRGD is in a
defined state when the VIN input voltage is greater than 1 V but with reduced current sinking capability. The
PWRGD achieves full current sinking capability when the VIN input voltage is above 4.5 V.
The PWRGD pin is pulled low when VSENSE is lower than 91% or greater than 109% of the nominal internal
reference voltage. Also, if the PWRGD is pulled low and the input UVLO or thermal shutdown are asserted, the
EN pin is pulled low or the SS/TR pin is set below 1.4 V.
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Feature Description (continued)
7.3.13 Output Overvoltage Protection (OVP)
The device incorporates an output overvoltage protection (OVP) circuit to minimize output voltage overshoot. For
example, when the power supply output is overloaded the error amplifier compares the actual output voltage to
the internal reference voltage. If the VSENSE pin voltage is lower than the internal reference voltage for a
considerable time, the output of the error amplifier demands maximum output current. When the condition is
removed, the regulator output rises and the error amplifier output transitions to the steady-state voltage. In some
applications with small output capacitance, the power supply output voltage can respond faster than the error
amplifier. This leads to the possibility of an output overshoot. The OVP feature minimizes the overshoot by
comparing the VSENSE pin voltage to the OVP threshold. If the VSENSE pin voltage is greater than the OVP
threshold the high-side MOSFET is turned off preventing current from flowing to the output and minimizing output
overshoot. When the VSENSE voltage drops lower than the OVP threshold, the high-side MOSFET is allowed to
turn on at the next clock cycle.
7.3.14 Overcurrent Protection
The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side
MOSFET and the low-side MOSFET.
7.3.14.1 High-Side MOSFET Overcurrent Protection
The device implements current mode control which uses the COMP pin voltage to control the turn off of the highside MOSFET and the turn on of the low-side MOSFET on a cycle-by-cycle basis. Each cycle the switch current
and the current reference generated by the COMP pin voltage are compared, when the peak switch current
intersects the current reference the high-side switch is turned off.
7.3.14.2 Low-Side MOSFET Overcurrent Protection
While the low-side MOSFET is turned on its conduction current is monitored by the internal circuitry. During
normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side
MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side
sourcing current is exceeded the high-side MOSFET is not turned on and the low-side MOSFET stays on for the
next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side sourcing
current limit at the start of a cycle.
The low-side MOSFET may also sink current from the load. If the low-side sinking current limit is exceeded the
low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario both MOSFETs are
off until the start of the next cycle.
7.3.15 Thermal Shutdown
The internal thermal shutdown circuitry forces the device to stop switching if the junction temperature exceeds
175°C typically. The device reinitiates the power-up sequence when the junction temperature drops below 165°C
typically.
7.3.16 Small Signal Model for Loop Response
Figure 20 shows an equivalent model for the device control loop which can be modeled in a circuit simulation
program to check frequency response and transient responses. The error amplifier is a transconductance
amplifier with a gm of 1300 μA/V. The error amplifier can be modeled using an ideal voltage controlled current
source. The resistor Roea (2.38 MΩ) and capacitor Coea (20.7 pF) model the open-loop gain and frequency
response of the error amplifier. The 1-mV AC voltage source between the nodes a and b effectively breaks the
control loop for the frequency response measurements. Plotting a/c and c/b show the small signal responses of
the power stage and frequency compensation respectively. Plotting a/b shows the small signal response of the
overall loop. The dynamic loop response can be checked by replacing the RL with a current source with the
appropriate load step amplitude and step rate in a time domain analysis.
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Feature Description (continued)
PH
VOUT
Power Stage
16 A/V
a
b
c
0.8 V
R3 Coea
C2
R1
RESR
VSENSE
CO
COMP
C1
Roea
gm
1300 mA/V
RL
R2
Copyright © 2016, Texas Instruments Incorporated
Figure 20. Small Signal Model for Loop Response
7.3.17 Simple Small Signal Model for Peak Current Mode Control
Figure 21 is a simple small signal model that can be used to understand how to design the frequency
compensation. The device power stage can be approximated to a voltage-controlled current source (duty cycle
modulator) supplying current to the output capacitor and load resistor. The control-to-output transfer function is
shown in Equation 5 and consists of a DC gain, one dominant pole, and one ESR zero. The quotient of the
change in switch current and the change in COMP pin voltage (node c in Figure 20) is the power stage
transconductance (gmps), which is 16 A/V for the device. The DC gain of the power stage is the product of gmps,
and the load resistance (RL) as shown in Equation 6 with resistive loads. As the load current increases, the DC
gain decreases. This variation with load may seem problematic at first glance, but fortunately the dominant pole
moves with load current (see Equation 7). The combined effect is highlighted by the dashed line in Figure 22. As
the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover
frequency the same for the varying load conditions, making it easier to design the frequency compensation.
VOUT
VC
RESR
RL
gm ps
CO
Figure 21. Simplified Small Signal Model for Peak Current Mode Control
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Feature Description (continued)
VOUT
Adc
VC
RESR
fp
RL
gm ps
CO
fz
Figure 22. Simplified Frequency Response for Peak Current Mode Control
æ
ç1+
2p
VOUT
= Adc ´ è
VC
æ
ç1+
è 2p
ö
s
÷
´ ¦z ø
ö
s
÷
´ ¦p ø
(5)
Adc = gmps ´ RL
where
•
•
gmps is the power stage gain (16 A/V).
RL is the load resistance
(6)
1
C O ´ R L ´ 2p
¦p =
where
•
•
CO is the output capacitance.
RL is the load resistance
(7)
1
¦z =
CO ´ RESR ´ 2p
where
•
•
CO is the output capacitance.
RESR is the equivalent series resistance of the output capacitor.
(8)
7.3.18 Small Signal Model for Frequency Compensation
The device uses a transconductance amplifier for the error amplifier and readily supports two of the commonly
used Type II compensation circuits and a Type III frequency compensation circuit, as shown in Figure 23. In
Type 2A, one additional high frequency pole, C6, is added to attenuate high-frequency noise. In Type III, one
additional capacitor, C11, is added to provide a phase boost at the crossover frequency. See Designing Type III
Compensation for Current Mode Step-Down Converters (SLVA352) for a complete explanation of Type III
compensation.
The design guidelines below are provided for advanced users who prefer to compensate using the general
method. The below equations only apply to designs whose ESR zero is above the bandwidth of the control loop.
This is usually true with ceramic output capacitors. See the Application Information section for a step-by-step
design procedure using higher ESR output capacitors with lower ESR zero frequencies.
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Feature Description (continued)
VOUT
C11
R8
Type 3
VSENSE
COMP Type 2A
Vref
R9
gm ea
Roea
R4
Coea
C6
Type 2B
R4
C4
C4
Figure 23. Types of Frequency Compensation
The general design guidelines for device loop compensation are as follows:
1. Determine the crossover frequency, fc. A good starting point is 1/10th of the switching frequency, fsw.
2. R4 can be determined by:
2p ´ ¦ c ´ VOUT ´ Co
R4 =
gmea ´ Vref ´ gmps
where
•
•
•
gmea is the GM amplifier gain (1300 μA/V)
gmps is the power stage gain (12 A/V)
Vref is the reference voltage (0.8 V)
(9)
æ
ö
1
ç ¦p =
÷
CO ´ RL ´ 2p ø
3. Place a compensation zero at the dominant pole: è
C4 can be determined by:
R ´ Co
C4 = L
R4
(10)
4. C6 is optional. It can be used to cancel the zero from the ESR (Equivalent Series Resistance) of the output
capacitor Co.
´ Co
R
C6 = ESR
R4
(11)
5. Type III compensation can be implemented with the addition of one capacitor, C11. This allows for slightly
higher loop bandwidths and higher phase margins. If used, C11 is calculated from Equation 12.
1
C11 =
(2 × p × R8 × fc )
(12)
7.4 Device Functional Modes
7.4.1 Adjustable Switching Frequency (RT Mode)
To determine the RT resistance for a given switching frequency, use Equation 13 or the curve in Figure 24. To
reduce the solution size, one would set the switching frequency as high as possible, but tradeoffs of the supply
efficiency and minimum controllable on-time must be considered.
- 0.997
Rrt(k W ) = 48000 × Fsw (kHz )
-2
(13)
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Device Functional Modes (continued)
RT − Resistance − kW
250
200
150
100
50
0
200
400
600
800
1000
1200
1400
1600
Fsw − Oscillator Frequency − kHz
Figure 24. RT Set Resistor vs Switching Frequency
7.4.2 Synchronization (CLK Mode)
An internal Phase Locked Loop (PLL) has been implemented to allow synchronization between 200 kHz and
1600 kHz, and to easily switch from RT mode to CLK mode.
To implement the synchronization feature, connect a square wave clock signal to the RT/CLK pin with a duty
cycle between 20% to 80%. The clock signal amplitude must transition lower than 0.8 V and higher than 2.0 V.
The start of the switching cycle is synchronized to the falling edge of RT/CLK pin.
In applications where both RT mode and CLK mode are needed, the device can be configured as shown in
Figure 25. Before the external clock is present, the device works in RT mode and the switching frequency is set
by RT resistor. When the external clock is present, the CLK mode overrides the RT mode. The first time the
SYNC pin is pulled above the RT/CLK high threshold (2.0 V), the device switches from the RT mode to the CLK
mode and the RT/CLK pin becomes high impedance as the PLL starts to lock onto the frequency of the external
clock. TI does not recommend switching from the CLK mode back to the RT mode because the internal switching
frequency drops to 100 kHz first before returning to the switching frequency set by RT resistor.
RT/CLK
mode select
TPS54620
RT/CLK
Rrt
Copyright © 2016, Texas Instruments Incorporated
Figure 25. Works With Both RT Mode and CLK Mode
7.4.3 Bootstrap Voltage (BOOT) and Low-Dropout Operation
The device has an integrated boot regulator, and requires a small ceramic capacitor between the BOOT and PH
pins to provide the gate drive voltage for the high-side MOSFET. The boot capacitor is charged when the BOOT
pin voltage is less than VIN and BOOT-PH voltage is below regulation. The value of this ceramic capacitor
should be 0.1 μF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher
is recommended because of the stable characteristics over temperature and voltage.
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Device Functional Modes (continued)
To improve dropout, the device is designed to operate at 100% duty cycle as long as the BOOT to PH pin
voltage is greater than the BOOT-PH UVLO threshold which is typically 2.1 V. When the voltage between BOOT
and PH drops below the BOOT-PH UVLO threshold the high-side MOSFET is turned off and the low-side
MOSFET is turned on allowing the boot capacitor to be recharged. In applications with split input voltage rails,
100% duty cycle operation can be achieved as long as (VIN – PVIN) > 4 V.
7.4.4 Sequencing (SS/TR)
Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD
pins.
The sequential method is illustrated in Figure 26 using two TPS54620 devices. The power good of the first
device is coupled to the EN pin of the second device which enables the second power supply when the primary
supply reaches regulation. Figure 27 shows the results of Figure 26.
PWRGD = 2 V / div
TPS54620
TPS54620
PWRGD
EN
EN
SS/TR
SS/TR
EN = 2 V / div
Vout1 = 1 V / div
Vout2 = 1 v / div
PWRGD
Copyright © 2016, Texas Instruments Incorporated
Figure 26. Sequential Start-Up Sequence
Time = 20 msec / div
Figure 27. Sequential Start-Up Using EN and
PWRGD
.
Figure 28 shows the method implementing ratiometric sequencing by connecting the SS/TR pins of two devices
together. The regulator outputs ramp up and reach regulation at the same time. When calculating the slow start
time the pullup current source must be doubled in Equation 4. Figure 29 shows the results of Figure 28.
EN = 2 V / div
TPS54620
EN
SS/TR
Vout1 = 1 V / div
PWRGD
Vout2 = 1 v / div
TPS54620
Time = 20 msec / div
EN
SS/TR
.
PWRGD
Copyright © 2016, Texas Instruments Incorporated
Figure 28. Ratiometric Start-Up Sequence
Figure 29. Ratiometric Start-Up Using Coupled
SS/TR Pins
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Device Functional Modes (continued)
Ratiometric and simultaneous power supply sequencing can be implemented by connecting the resistor network
of R1 and R2 shown in Figure 30 to the output of the power supply that must be tracked or another voltage
reference source. Using Equation 14 and Equation 15, the tracking resistors can be calculated to initiate the
Vout2 slightly before, after or at the same time as Vout1. Equation 16 is the voltage difference between Vout1
and Vout2.
To design a ratiometric start-up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2
reaches regulation, use a negative number in Equation 14 and Equation 15 for ΔV. Equation 16 results in a
positive number for applications where the Vout2 is slightly lower than Vout1 when Vout2 regulation is achieved.
Figure 31 and Figure 32 show the results for positive ΔV and negative ΔV, respectively.
The ΔV variable is zero volt for simultaneous sequencing. To minimize the effect of the inherent SS/TR to
VSENSE offset (Vssoffset, 29 mV) in the slow-start circuit and the offset created by the pullup current source
(Iss, 2.3 μA) and tracking resistors, the Vssoffset and Iss are included as variables in the equations. Figure 33
shows the result when ΔV = 0 V.
To ensure proper operation of the device, the calculated R1 value from Equation 14 must be greater than the
value calculated in Equation 17.
R1 =
Vout2 + D V
Vssoffset
´
Vref
Iss
(14)
Vref ´ R1
R2 =
Vout2 + DV - Vref
DV = Vout1 - Vout2
R1 > 2800 ´ Vout1- 180 ´ DV
(15)
(16)
(17)
TPS54620
EN
VOUT1
SS/TR
PWRGD
TPS54620
EN
VOUT 2
R1
SS/TR
R2
PWRGD
R4
R3
Copyright © 2016, Texas Instruments Incorporated
Figure 30. Ratiometric and Simultaneous Start-Up Sequence
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Device Functional Modes (continued)
EN = 2 V / div
EN = 2 V / div
Vout1 = 1 V / div
Vout1 = 1 V / div
Vout2 = 1 V / div
Vout2 = 1 V / div
Time = 20 msec / div
Time = 20 msec / div
Figure 31. Ratiometric Start-Up With Vout1 Leading Figure 32. Ratiometric Start-Up With Vout2 Leading
Vout2
Vout1
EN = 2 V / div
Vout1 = 1 V / div
Vout2 = 1 V / div
Time = 20 msec / div
Figure 33. Simultaneous Start-Up
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS54620 device is a highly-integrated, synchronous, step-down, DC-DC converter. This device is used to
convert a higher DC input voltage to a lower DC output voltage, with a maximum output current of 6 A.
8.2 Typical Application
The application schematic of Figure 34 was developed to meet the requirements of the device. This circuit is
available as the TPS54620EVM-374 evaluation module. The design procedure is given in this section.
Copyright © 2016, Texas Instruments Incorporated
Figure 34. Typical Application Circuit
8.2.1 Design Requirements
This example details the design of a high frequency switching regulator design using ceramic output capacitors.
A few parameters must be known to start the design process. These parameters are typically determined at the
system level. For this example, the known parameters in Table 1 are used.
Table 1. Design Parameters
24
DESIGN PARAMETER
EXAMPLE VALUE
Output Voltage
3.3 V
Output Current
6A
Transient Response 1A load step
ΔVout = 5 %
Input Voltage
12 V nominal, 8 V to 17 V
Output Voltage Ripple
33 mV p-p
Start Input Voltage (Rising Vin)
6.528 V
Stop Input Voltage (Falling Vin)
6.190 V
Switching Frequency
480 kHz
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8.2.2 Detailed Design Procedures
8.2.2.1 Custom Design With WEBENCH Tools
Click here to create a custom design using the TPS54620 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. WEBENCH Power Designer provides you with a customized schematic along with a list of materials with real
time pricing and component availability.
4. In most cases, you will also be able to:
– Run electrical simulations to see important waveforms and circuit performance,
– Run thermal simulations to understand the thermal performance of your board,
– Export your customized schematic and layout into popular CAD formats,
– Print PDF reports for the design, and share your design with colleagues.
5. Get more information about WEBENCH tools at www.ti.com/webench.
8.2.2.2 Operating Frequency
The first step is to decide on a switching frequency for the regulator. There is a trade-off between higher and
lower switching frequencies. Higher switching frequencies may produce a smaller solution size using lowervalued inductors and smaller output capacitors compared to a power supply that switches at a lower frequency.
However, the higher switching frequency causes extra switching losses, which hurt the efficiency and thermal
performance of the converter. In this design, a moderate switching frequency of 480 kHz is selected to achieve
both a small solution size and a high-efficiency operation.
8.2.2.3 Output Inductor Selection
To calculate the value of the output inductor, use Equation 18. KIND is a coefficient that represents the amount
of inductor ripple current relative to the maximum output current. The inductor ripple current is filtered by the
output capacitor. Therefore, choosing high inductor ripple currents impact the selection of the output capacitor
because the output capacitor must have a ripple current rating equal to or greater than the inductor ripple
current. In general, the inductor ripple value is at the discretion of the designer; however, KIND is normally from
0.1 to 0.3 for the majority of applications.
L1 =
Vinm ax - Vout
Vout
×
Io × Kind
Vinm ax × f sw
(18)
For this design example, use KIND = 0.3 and the inductor value is calculated to be 3.08 µH. For this design, a
nearest standard value was chosen: 3.3 µH. For the output filter inductor, it is important that the RMS current
and saturation current ratings not be exceeded. The RMS and peak inductor current can be found from
Equation 20 and Equation 21.
Vinmax - Vout
Vout
×
Iripple =
L1
Vinmax × f sw
(19)
ILrms = Io2 +
1 æ Vo × (Vinmax - Vo ) ö
×ç
÷
12 çè Vinmax × L1× f sw ÷ø
2
(20)
Iripple
ILpeak = Iout +
2
(21)
For this design, the RMS inductor current is 6.02 A and the peak inductor current is 6.84 A. The chosen inductor
is a Coilcraft MSS1048 series 3.3 µH. It has a saturation current rating of 7.38 A and a RMS current rating of
7.22 A.
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The current flowing through the inductor is the inductor ripple current plus the output current. During power up,
faults or transient load conditions, the inductor current can increase above the calculated peak inductor current
level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of
the device. For this reason, the most conservative approach is to specify an inductor with a saturation current
rating equal to or greater than the switch current limit rather than the peak inductor current.
8.2.2.4 Output Capacitor Selection
There are three primary considerations for selecting the value of the output capacitor. The output capacitor
determines the modulator pole, the output voltage ripple, and how the regulator responds to a large change in
load current. The output capacitance must be selected based on the more stringent of these three criteria
The desired response to a large change in the load current is the first criteria. The output capacitor must supply
the load with current when the regulator can not. This situation would occur if there are desired hold-up times for
the regulator where the output capacitor must hold the output voltage above a certain level for a specified
amount of time after the input power is removed. The regulator is also temporarily not able to supply sufficient
output current if there is a large, fast increase in the current needs of the load such as a transition from no load
to full load. The regulator usually needs two or more clock cycles for the control loop to see the change in load
current and output voltage and adjust the duty cycle to react to the change. The output capacitor must be sized
to supply the extra current to the load until the control loop responds to the load change. The output capacitance
must be large enough to supply the difference in current for 2 clock cycles while only allowing a tolerable amount
of droop in the output voltage. Equation 22 shows the minimum output capacitance necessary to accomplish this.
2 × DIout
Co >
f sw × DVout
where
•
•
•
ΔIout is the change in output current,
fsw is the regulators switching frequency,
and ΔVout is the allowable change in the output voltage
(22)
For this example, the transient load response is specified as a 5% change in Vout for a load step of 1 A. For this
example, ΔIout = 1.0 A and ΔVout = 0.05 × 3.3 = 0.165 V. Using these numbers gives a minimum capacitance of
25 μF. This value does not take the ESR of the output capacitor into account in the output voltage change. For
ceramic capacitors, the ESR is usually small enough to ignore in this calculation.
Equation 23 calculates the minimum output capacitance needed to meet the output voltage ripple specification.
In this case, the maximum output voltage ripple is 33 mV. Under this requirement, Equation 23 yields 13.2 µF.
1
1
Co >
×
8 × f sw Voripple
Iripple
where
•
•
Vripple is the maximum allowable output voltage ripple,
and Iripple is the inductor ripple current
(23)
Equation 24 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 24 indicates the ESR should be less than 19.7 mΩ. In this case, the ESR of the ceramic
capacitors is much smaller than 19.7 mΩ.
Voripple
Resr <
Iripple
(24)
Additional capacitance de-ratings for aging, temperature and DC bias should be factored in which increases this
minimum value. For this example, a 47-μF, 6.3-V X5R ceramic capacitor with 3 mΩ of ESR is be used.
Capacitors generally have limits to the amount of ripple current they can handle without failing or producing
excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor
data sheets specify the RMS (Root Mean Square) value of the maximum ripple current. Equation 25 can be used
to calculate the RMS ripple current the output capacitor is required to support. For this application, Equation 25
yields 485 mA.
26
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Icorms =
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Vout × (Vinmax - Vout )
12 × Vinmax × L1× f sw
(25)
8.2.2.5 Input Capacitor Selection
The TPS54620 requires a high-quality ceramic, type X5R or X7R, input decoupling capacitor of at least 4.7 µF of
effective capacitance on the PVIN input voltage pins and 4.7 µF on the Vin input voltage pin. In some
applications additional bulk capacitance may also be required for the PVIN input. The effective capacitance
includes any DC bias effects. The voltage rating of the input capacitor must be greater than the maximum input
voltage. The capacitor must also have a ripple current rating greater than the maximum input current ripple of the
TPS54620. The input ripple current can be calculated using Equation 26.
Icirms = Iout ×
Vout (Vinmin - Vout )
×
Vinmin
Vinmin
(26)
The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the
capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that
is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors
because they have a high capacitance to volume ratio and are fairly stable over temperature. The output
capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor
decreases as the DC bias across a capacitor increases. For this example design, a ceramic capacitor with at
least a 25-V voltage rating is required to support the maximum input voltage. For this example, one 10-μF and
one 4.7-µF, 25-V capacitors in parallel have been selected as the VIN and PVIN inputs are tied together so the
TPS54620 may operate from a single supply. The input capacitance value determines the input ripple voltage of
the regulator. The input voltage ripple can be calculated using Equation 27. Using the design example values,
Ioutmax = 6 A, Cin = 14.7 μF, Fsw = 480 kHz, yields an input voltage ripple of 213 mV and a RMS input ripple
current of 2.95 A.
Ioutmax × 0.25
DVin =
Cin × f sw
(27)
8.2.2.6 Slow-Start Capacitor Selection
The slow-start capacitor determines the minimum amount of time it takes for the output voltage to reach its
nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This
is also used if the output capacitance is very large and would require large amounts of current to quickly charge
the capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the
TPS54620 reach the current limit or excessive current draw from the input power supply may cause the input
voltage rail to sag. Limiting the output voltage slew rate solves both of these problems. The soft-start capacitor
value can be calculated using Equation 28. For the example circuit, the soft-start time is not too critical because
the output capacitor value is 47 μF, which does not require much current to charge to 3.3 V. The example circuit
has the soft-start time set to an arbitrary value of 3.5 ms which requires a 10-nF capacitor. In TPS54620, Iss is
2.3 µA and Vref is 0.8 V.
Tss(ms) x Iss(μA)
C5(nF) =
Vref(V)
(28)
8.2.2.7 Bootstrap Capacitor Selection
A 0.1-µF ceramic capacitor must be connected between the BOOT-PH pin for proper operation. TI recommends
using a ceramic capacitor with X5R or better grade dielectric. The capacitor must have a 10-V or higher voltage
rating.
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8.2.2.8 Undervoltage Lockout Set Point
The undervoltage lockout (UVLO) can be adjusted using the external voltage divider network of R3 and R4. R3 is
connected between VIN and the EN pin of the TPS54620 and R4 is connected between EN and GND . The
UVLO has two thresholds, one for power up when the input voltage is rising and one for power down or
brownouts when the input voltage is falling. For the example design, the supply should turn on and start
switching when the input voltage increases above 6.528 V (UVLO start or enable). After the regulator starts
switching, it should continue to do so until the input voltage falls below 6.190 V (UVLO stop or disable).
Equation 2 and Equation 3 can be used to calculate the values for the upper and lower resistor values. For the
stop voltages specified the nearest standard resistor value for R3 is 35.7 kΩ and for R4 is 8.06 kΩ.
8.2.2.9 Output Voltage Feedback Resistor Selection
The resistor divider network R5 and R6 is used to set the output voltage. For the example design, 10 kΩ was
selected for R6. Using Equation 29, R5 is calculated as 31.25 kΩ. The nearest standard 1% resistor is 31.6 kΩ.
Vo - Vref
R5 =
R6
Vref
(29)
8.2.2.9.1 Minimum Output Voltage
Due to the internal design of the TPS54620, there is a minimum output voltage limit for any given input voltage.
The output voltage can never be lower than the internal voltage reference of 0.8 V. Above 0.8 V, the output
voltage may be limited by the minimum controllable on time. The minimum output voltage in this case is given by
Equation 30
spacer
VOUTmin = Ontimemin × ƒsmax (VINmax + IOUTmin (RDS2min – RDS1min)) – IOUTmin (RL + RDS2min)
where
•
•
•
•
•
•
•
•
VOUTmin = minimum achievable output voltage
Ontimemin = minimum controllable on-time (135 ns maximum)
ƒsmax = maximum switching frequency including tolerance
VINmax = maximum input voltage
IOUTmin = minimum load current
RDS1min = minimum high-side MOSFET on-resistance (36 to 32 mΩ typical)
RDS2min = minimum low-side MOSFET on-resistance (19 mΩ typical)
RL = series resistance of output inductor
(30)
8.2.2.10 Compensation Component Selection
There are several industry techniques used to compensate DC-DC regulators. The method presented here is
easy to calculate and yields high phase margins. For most conditions, the regulator has a phase margin between
60 and 90 degrees. The method presented here ignores the effects of the slope compensation that is internal to
the TPS54620. Because the slope compensation is ignored, the actual cross over frequency is usually lower than
the crossover frequency used in the calculations. Use WEBENCH software for a more accurate design.
First, the modulator pole, ƒpmod, and the esr zero, ƒzmod must be calculated using Equation 31 and
Equation 32. For Cout, use a derated value of 22.4 µF. use Equation 33 and Equation 34 to estimate a starting
point for the closed-loop crossover frequency ƒco. Then the required compensation components may be derived.
For this design example, ƒpmod is 12.9 kHz and ƒzmod is 2730 kHz. Equation 33 is the geometric mean of the
modulator pole and the ESR zero and Equation 34 is the geometric mean of the modulator pole and one half the
switching frequency. Use a frequency near the lower of these two values as the intended crossover frequency
ƒco. In this case Equation 33 yields 175 kHz and Equation 34 yields 55.7 kHz. The lower value is 55.7 kHz. A
slightly higher frequency of 60.5 kHz is chosen as the intended crossover frequency.
Iout
f pmod =
2 × p × Vout × Cout
(31)
f zm od =
f co =
28
1
2 × p × RESR × Cout
(32)
f pmod × f zmod
(33)
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f co =
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f pmod ×
f sw
2
(34)
Now the compensation components can be calculated. First calculate the value for R2 which sets the gain of the
compensated network at the crossover frequency. Use Equation 35 to determine the value of R2.
2p × f c × Vout × Cout
R2 =
gmea × Vref × gmps
(35)
Next calculate the value of C3. Together with R2, C3 places a compensation zero at the modulator pole
frequency. Equation 36 to determine the value of C3.
Vout × Cout
C3 =
Iout × R2
(36)
Using Equation 35 and Equation 36 the standard values for R2 and C3 are 1.69 kΩ and 8200 pF.
An additional high frequency pole can be used if necessary by adding a capacitor in parallel with the series
combination of R2 and C3. The pole frequency is given by Equation 37. This pole is not used in this design.
1
fp =
2 × p × R2 × Cp
(37)
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8.2.2.11 Fast Transient Considerations
In applications where fast transient responses are important, the application circuit in Figure 34 can be modified
as shown in Figure 35, which is a customized reference design (PMP4854-2, REV.B).
The frequency responses of Figure 35 is shown in Figure 36. The crossover frequency is pushed much higher to
118 kHz and the phase margin is about 57 degrees.
For more information about Type II and Type III frequency compensation circuits, refer to the Designing Type III
Compensation for Current Mode Step-Down Converters (SLVA352) and TPS54620 & TPS54XXX Current-Mode
Step-Down Converter Design Calculator (SLVC219) data sheet.
Copyright © 2016, Texas Instruments Incorporated
Figure 35. 3.3-V Output Power Supply Design (PMP4854-2) With Fast Transients
Figure 36. Closed-Loop Response for PMP4854-2
30
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8.2.3 Application Curves
Vin = 10 V / div
Vout = 50 mV / div (ac coupled)
EN = 2 V / div
Iout = 2A / div (1.5 A to 4.5 load step)
SS/TR = 1 V / div
Vout = 2 V / div
Time = 500 μsec / div
Time = 2 msec / div
Figure 37. Load Transient
Figure 38. Start-Up With VIN
Vin = 5 V / div
Vin = 10 V / div
EN = 2 V / div
Vout = 2 V / div
SS/TR = 1 V / div
Vout starting from pre-bias voltage
Vout = 2 V / div
Time = 2 msec / div
Time = 20 msec / div
Figure 39. Start-Up With EN
Figure 40. Start-Up With Prebias
Vin = 10 V / div
Vin = 10 V / div
EN = 2 V / div
EN = 2 V / div
SS/TR = 1 V / div
SS/TR = 1 V / div
Vout = 2 V / div
Vout = 2 V / div
Time = 2 msec / div
Time = 2 msec / div
Figure 41. Shutdown With VIN
Figure 42. Shutdown With EN
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Vout = 10 mV / div (ac coupled)
Vout = 10 mV / div (ac coupled)
PH = 5 V / div
PH = 5 V / div
Time = 1 μsec / div
Time = 1 μsec / div
Figure 43. Output Voltage Ripple With No Load
Figure 44. Output Voltage Ripple With Full Load
Vin = 200 mV / div (ac coupled)
Vin = 200 mV / div (ac coupled)
PH = 5 V / div
PH = 5 V / div
Time = 1 μsec / div
Time = 1 μsec / div
Figure 45. Input Voltage Ripple With No Load
60
180
50
150
40
Figure 46. Input Voltage Ripple With Full Load
0.05
0.04
120
Phase
0.03
Gain - dB
Gain
10
30
0
0
-10
-30
-20
-60
-30
-90
-40
-120
-50
-150
-60
-180
Percent Regulation - %
60
20
Phase - Deg
90
30
0.02
0.01
0
Io = 3A
Io = 0A
-0.01
-0.02
-0.03
1000000
100000
10000
1000
100
10
Frequency - Hz
Io = 6A
-0.04
-0.05
8
Figure 47. Closed-Loop Response
32
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9
10
11
12
13
14
15
16
17
Input Voltage - V
Figure 48. Line Regulation
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10
0.05
10
Vin = 12 V
Vout
0.04
1
1
0.02
0.01
0
-0.01
0.1
0.1
Ideal Vsense
Vsense
0.01
0.01
0.001
0.001
0.0001
0.0001
Vsense Voltage - V
Output Voltage - V
Percent Regulation - %
0.03
-0.02
-0.03
-0.04
0.00001
0.001
-0.05
0
1
2
3
4
5
Output Current - A
6
7
8
1
10
Figure 50. Tracking Performance
150
TA - Maximum Ambient Temperature - °C
150
TA - Maximum Ambient Temperature - °C
0.1
Track In Voltage - V
Figure 49. Load Regulation
125
Tjmax = 150 °C,
no air flow
125
100
100
75
VIN = 12 V,
VOUT = 3.3 V,
Fsw = 480 kHz,
room temp, no air flow
50
75
50
25
25
0
1
2
3
4
Load Current - A
5
6
Figure 51. Maximum Ambient Temperature vs Load
Current
0
0.5
1
1.5
2 2.5
3
3.5
PD - IC Power Dissipation - W
4
Figure 52. Maximum Ambient Temperature vs IC Power
Dissipation
150
100
TA = room temperature,
no air flow
95
125
90
85
Efficiency - %
TJ - Junction Temperature - °C
0.00001
0.01
100
75
80
VOUT = 5 V
75
VOUT = 3.3 V
70
VOUT = 1.8 V
65
VOUT = 1.2 V
50
60
VIN = 12 V
Fsw = 500 kHz
55
25
VOUT = 0.8 V
50
0
0.5
1
1.5
2
2.5
3
3.5
Pic - IC Power Dissipation - W
4
Figure 53. Junction Temperature vs IC Power Dissipation
0
1
3
2
4
Load Current - A
5
6
Figure 54. Efficiency vs Load Current
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9 Power Supply Recommendations
The TPS54620 is designed to operate from an input voltage supply range between 4.5 V and 17 V. This supply
voltage must be well regulated. Power supplies must be well bypassed for proper electrical performance. This
includes a minimum of one 4.7-µF (after de-rating) ceramic capacitor, type X5R or better from PVIN to GND, and
from VIN to GND. Additional local ceramic bypass capacitance may be required in systems with small input ripple
specifications, in addition to bulk capacitance if the TPS54620 device is located more than a few inches away
from its input power supply. In systems with an auxiliary power rail available, the power stage input, PVIN, and
the analog power input, VIN, may operate from separate input supplies. See Figure 55 (layout recommendation)
for recommended bypass capacitor placement.
10 Layout
10.1 Layout Guidelines
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
34
Layout is a critical portion of good power supply design. See Figure 55 for a PCB layout example.
The top layer contains the main power traces for VIN, VOUT, and VPHASE. Also, on the top layer are
connections for the remaining pins of the TPS54620 and a large top-side area filled with ground.
The top layer ground area must be connected to the internal ground layer(s) using vias at the input bypass
capacitor, the output filter capacitor and directly under the TPS54620 device to provide a thermal path from
the exposed thermal pad land to ground.
The GND pin must be tied directly to the power pad under the IC and the power pad.
For operation at full rated load, the top side ground area together with the internal ground plane, must provide
adequate heat dissipating area.
There are several signals paths that conduct fast changing currents or voltages that can interact with stray
inductance or parasitic capacitance to generate noise or degrade the power supplies performance.
To help eliminate these problems, the PVIN pin must be bypassed to ground with a low ESR ceramic bypass
capacitor with X5R or X7R dielectric.
Take care to minimize the loop area formed by the bypass capacitor connections, the PVIN pins, and the
ground connections.
The VIN pin must also be bypassed to ground using a low ESR ceramic capacitor with X5R or X7R dielectric.
Make sure to connect this capacitor to the quite analog ground trace rather than the power ground trace of
the PVIn bypass capacitor.
Since the PH connection is the switching node, the output inductor must be placed close to the PH pins, and
the area of the PCB conductor minimized to prevent excessive capacitive coupling.
The output filter capacitor ground must use the same power ground trace as the PVIN input bypass capacitor.
Try to minimize this conductor length while maintaining adequate width.
The small signal components must be grounded to the analog ground path as shown.
All sensitive analog traces and components such as VSENSE, RT/CLK and COMP must be placed away
from high-voltage switching nodes such as PH, BOOT and the output inductor to avoid noise coupling.
The output voltage sense trace must be connected to the positive terminal of one output capacitor in the
design, with the best high frequency characteristics. The output voltage will be most tightly regulated at the
voltage sense point.
The RT/CLK pin is sensitive to noise so the RT resistor must be placed as close as possible to the IC and
routed with minimal lengths of trace.
The additional external components can be placed approximately as shown.
It may be possible to obtain acceptable performance with alternate PCB layouts, however this layout has
been shown to produce good results and is meant as a guideline.
Land pattern and stencil information is provided in the data sheet addendum.
The dimension and outline information is for the standard RHL (S-PVQFN-N14) package.
There may be slight differences between the provided data and actual lead frame used on the
TPS54620RGY package. The RGY package is identical to the RHL package. The RHL footprint should be
used for both packages.
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10.2 Layout Example
TOPSIDE
GROUND
AREA
FREQUENCY SET RESISTOR
PVIN
INPUT
BYPASS
CAPACITOR
RT/CLK
PWRGD
GND
GND
OUTPUT
FILTER
CAPACITOR
BOOT
CAPACITOR
BOOT
EXPOSED THERMAL
PAD AREA
PVIN
PH
PVIN
EN
VIN
SS/TR
VSENSE
PVIN
OUTPUT
INDUCTOR
PH
VOUT
PH
COMP
VIN
SLOW START
CAPACITOR
VIN
INPUT
BYPASS
CAPACITOR
FEEDBACK
RESISTORS
UVLO SET
RESISTORS
COMPENSATION
NETWORK
ANALOG GROUND TRACE
0.010 in. Diameter
Thermal VIA to Ground Plane
VIA to Ground Plane
Etch Under Component
Figure 55. PCB Layout
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Layout Example (continued)
Figure 56. Ultra-Small PCB Layout Using TPS54620 (PMP4854-2)
10.3 Estimated Circuit Area
The estimated printed-circuit board area for the components used in the design of Figure 34 is 0.58. in2 (374
mm2). This area does not include test points or connectors.
The board area can be further reduced if size is a big concern in an application. Figure 56 shows the printed
circuit board layout for PMP4854-2 as shown in Figure 35 whose board area is as small as 17.27 mm × 11.30
mm.
10.4 Thermal Consideration
Figure 57. Thermal Signature of TPS54620EVM-374 Operating at
VIN = 12 V, VOUT = 3.3 V, 6 A, TA = Room Temperature
36
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Custom Design With WEBENCH Tools
Click here to create a custom design using the TPS54620 device with the WEBENCH® Power Designer.
1. Start by entering the VIN, VOUT, and IOUT requirements.
2. Optimize the design for key parameters like efficiency, footprint, and cost by using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. WEBENCH Power Designer provides a customized schematic and a list of materials with real-time pricing
and component availability.
4. In most cases, users will also be able to:
– Run electrical simulations to see important waveforms and circuit performance,
– Run thermal simulations to understand the thermal performance of your board,
– Export your customized schematic and layout into popular CAD formats,
– Print PDF reports for the design, and share the design with colleagues.
5. Get more information about WEBENCH tools at www.ti.com/webench.
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
SwitcherPro, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
38
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13-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
905-5462001
ACTIVE
VQFN
RGY
14
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 150
54620
TPS54620RGYR
ACTIVE
VQFN
RGY
14
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 150
54620
TPS54620RGYT
ACTIVE
VQFN
RGY
14
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 150
54620
TPS54620RHLR
ACTIVE
VQFN
RHL
14
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 150
54620
TPS54620RHLT
ACTIVE
VQFN
RHL
14
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 150
54620
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of