SLVS201A − JUNE 1999 − REVISED JULY 1999
D Single-Channel, 5-V Controller
D Synchronous-Rectifier Drivers for Greater
PWP PACKAGE
(TOP VIEW)
Than 90% Efficiency
IOUT
NC
OCP
VHYST
VREFB
VSENSE
ANAGND
SLOWST
BIAS
LODRV
LOHIB
DRVGND
LOWDR
DRV
D Useable for All Common DSP Supply
D
D
D
D
D
D
Voltages – Popular Output Voltage Options
Set With Program Pins
EVM Available
Ideal for Applications With Current Ranges
From 3 A to 30 A.
Hysteretic Control Technique Enables Fast
Transient Response — Ideal for ’C6000 or
Multiple ’C5000 Applications
Low Supply Current
− 3 mA in Operation
− 90 µA in Standby
Power Good Output
28-Pin TSSOP PowerPAD Package
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
PWRGD
VP0
VP1
VP2
VP3
VP4
INHIBIT
IOUTLO
LOSENSE
HISENSE
BOOTLO
HIGHDR
BOOT
VCC
NC − Not Connected
description
The TPS56100 is a high-efficiency synchronous-buck regulator controller which provides an accurate
programmable supply voltage to low-voltage digital signal processors, such as the ‘C6x and ‘C54x DSPs. An
internal 5-bit DAC is used to program the reference voltage from 1.3 V to 2.6 V. Higher output voltages can be
implemented using an external input resistive divider. The TPS56100 uses a fast hysteretic control method that
provides a quick transient response. The propagation delay from the comparator input to the output driver is
application example
5V
GND
1
2
3
4
5
6
7
VCC
HIGHDR
BOOTLO
BOOT
DRV
LOWDR
DRVGND
1.5 V
LOHIB
HISENSE
IOUTLO
LOSENSE
8
LODRV
VSENSE
ANAGND
VREFB
VHYST
OCP
NC
IOUT
TPS56100
SLOWST
BIAS
VP4
INHIBIT
VP3
VP2
VP1
VP0
PWRGD
28 27 26 25 24 23 22 21 20 19 18 17 16 15
+
CVDD
DSP
9 10 11 12 13 14
GND
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments Incorporated.
Copyright 1999, Texas Instruments Incorporated
!" # $%&" !# '%()$!" *!"&+
*%$"# $ " #'&$$!"# '& ",& "&# &-!# #"%&"#
#"!*!* .!!"/+ *%$" '$#0 * " &$#!)/ $)%*&
""0 !)) '!!&"&#+
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
SLVS201A − JUNE 1999 − REVISED JULY 1999
description (continued)
less than 300 ns, even at maximum output current. Overcurrent shutdown and crossover protection combine
to eliminate destructive faults in the output MOSFETs, thereby protecting the processor during operation. The
slowstart current source is proportional to the reference voltage, thereby eliminating variation of the slowstart
timing when changes are made to the output voltage. When the output drops to less than 93% of the nominal
output voltage, PWRGD will pull the open-drain output low. The overvoltage circuit will disable the output drivers
if the output voltage rises more than 15% above the nominal output voltage. The TPS56100 also includes an
inhibit input to control power sequencing and undervoltage lockout thereby insuring the 5-V supply is within
limits before the controller starts. The 2-A MOSFET drivers can power multiple MOSFETs in parallel to drive
single or multiple DSPs and load currents up to 30 A. The high-side driver can be configured as a
ground-referenced driver or as a floating bootstrap driver with the included internal bootstrap Schottky diode.
The TPS56100 is available in a 28-pin TSSOP PowerPAD package, which increases thermal efficiency and
eliminates bulky heat sinks.
AVAILABLE OPTIONS
PACKAGES
TJ
TSSOP†
(PWP)
EVM
0°C to 125°C
TPS561000PWP
TPS56100EVM−128
† The PWP package is also available taped and reel. To order, add an R
to the end of the part number (e.g., TPS561000PWPR).
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
22
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Bandgap
SLOWST
OCP
INHIBIT
27
−
+
26
Deglitch
Deglitch
25
23
IVREFB
5
5
+ −
VREF
Q
15
6
Fault
7
+
−
+
−
Hysteresis
Comp
Shutdown
HIGHIN
28
PWRGD
Slowstart
Comp
VPGD
0.93 Vref
Shutdown
CM Filters
ANAGND
VHYST VSENSE
4
Hysteresis
Setting
Analog Bias
R
S
UVLO
VSENSE
NOCPU
VP3 VP4 VREFB
24
VP
MUX
and
Decoder
Shutdown
VOVP
1.15 Vref
VP0 VP1 VP2
8
+
100 mV
VCC
3.6 V
2V
11111
Decode
VCC
LOHIB
11
20
LOSENSE
Analog
Bias
LODRV
10
Rising
Edge
Delay
21
+
−
19
1
HIGHDR
BOOT
DRV
BIAS
IOUT
12
13
DRVGND
LOWDR
200 kΩ
18
BOOTLO
17
16
14
9
HIGHDR
2x
200 kΩ
IOUTLO HISENSE
functional block diagram
I VREFB
VP0
VP1
VP2
VP3
VP4
1111
11 1
SLVS201A − JUNE 1999 − REVISED JULY 1999
3
SLVS201A − JUNE 1999 − REVISED JULY 1999
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
ANAGND
7
I
Analog ground
BIAS
9
I
Analog BIAS pin. This terminal must be connected to 5-V supply voltage. A 1-µF ceramic capacitor should be
connected from BIAS to ANAGND.
BOOT
16
I
Bootstrap. Connect a 1-µF low-ESR capacitor from BOOT to BOOTLO.
BOOTLO
18
I
Bootstrap low. Connect BOOTLO to the junction of the high-side and low-side FETs for floating drive
configuration. Connect BOOTLO to PGND for ground reference drive configuration.
DRV
14
I
Drive bias for the FET drivers. This terminal must be connected to 5-V supply voltage. A 1-µF ceramic capacitor
should be connected from DRV to DRVGND.
DRVGND
12
I
Drive ground. Ground for FET drivers. Connect to FET PWRGND.
HIGHDR
17
O
High drive. Output drive to high-side power switching FETs
HISENSE
19
I
High current sense. For current sensing across high-side FETs, connect to the drain of the high-side FETs; for
optional resistor sensing scheme, connect to power supply side of current-sense resistor placed in series with
high-side FET drain.
INHIBIT
22
I
Disables the drive signals to the MOSFET drivers.
IOUT
1
O
Current out. Output voltage on this pin is proportional to the load current as measured across the Rds(on) of the
high-side FETs. The voltage on this pin equals 2×Rds(on)×IOUT. In applications where very accurate current
sensing is required, a sense resistor should be connected between the input supply and the drain of the high-side
FETs.
IOUTLO
21
O
Current sense low output. This is the voltage on the LOSENSE pin when the high-side FETs are on. A ceramic
capacitor should be connected from IOUTLO to HISENSE to hold the sensed voltage while the high-side FETs
are off. Capacitance range should be between 0.033 µF and 0.1 µF.
LODRV
10
I
Low drive enable. Normally tied to 5 V. To activate the low-side FETs as a crowbar, pull LODRV low.
LOHIB
11
I
Low side inhibit. Connect to the junction of the high and low side FETs to control the anti-cross-conduction and
eliminate shoot-through current. Disabled when configured in crowbar mode.
LOSENSE
20
I
Low current sense. For current sensing across high-side FETs, connect to the source of the high-side FETs; for
optional resistor sensing scheme, connect to high-side FET drain side of current-sense resistor placed in series
with high-side FET drain.
LOWDR
13
O
Low drive. Output drive to synchronous rectifier FETs
NC
2
OCP
3
I
Over current protection. Current limit trip point is set with a resistor divider between IOUT and ANAGND.
PWRGD
28
O
Power good. Power Good signal goes high when output voltage is within 7% of voltage set by VID pins.
Open-drain output.
SLOWST
8
O
Slow Start (soft start). A capacitor from SLOWST to ANAGND sets the slowstart time.
Slowstart current = IVREFB/5
VCC
15
I
5-V supply. A 1-µF ceramic capacitor should be connected from VCC to DRVGND.
VHYST
4
I
HYSTERESIS set pin. The hysteresis is set with a resistor divider from VREFB to ANAGND.
The hysteresis window = 2 × (VREFB – VHYST)
VP0
27
I
Voltage programming input 0
VP1
26
I
Voltage programming input 1
VP2
25
I
Voltage programming input 2
VP3
24
I
Voltage programming input 3
VP4
23
I
Voltage programming input 4. Digital inputs that set the output voltage of the converter. The code pattern for
setting the output voltage is located in Table 1. Internally pulled up to 5 V.
VREFB
5
O
Buffered reference voltage from VP network
VSENSE
6
I
Voltage sense Input. To be connected to converter output voltage bus to sense and control output voltage. It is
recommended that an RC low pass filter be connected at this pin to filter noise.
4
Not connected
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SLVS201A − JUNE 1999 − REVISED JULY 1999
detailed description
VREF
The reference/voltage programming (VP) section consists of a temperature-compensated bandgap reference
and a 5-bit voltage selection network. The 5 VP terminals are inputs to the VP selection network and are
TTL-compatible inputs internally pulled up to 5 V. The VP codes conform to the Intel VRM 8.3 DC-DC Converter
Specification for voltage settings between 1.8 V and 2.6 V, and they are decremented by 50 mV, down to 1.3
V, for the lower VP settings. Voltages higher than VREF can be implemented using an external resistive divider.
Refer to Table 1 for the VP code settings. The output voltage of the VP network, VREF, is within ±1.5% of the
nominal setting over the VP range of 1.3 V to 2.6 V, including a junction temperature range of 0°C to +125°C.
The output of the reference/VP network is indirectly brought out through a buffer to the VREFB pin. The voltage
on this pin will be within 2% of VREF. It is not recommended to drive loads with VREFB, other than setting the
hysteresis of the hysteretic comparator, because the current drawn from VREFB sets the charging current for
the slowstart capacitor. Refer to the slowstart section for additional information.
hysteretic comparator
The hysteretic comparator regulates the output voltage of the synchronous-buck converter. The hysteresis is
set by 2 external resistors and is centered about VREF. The 2 external resistors form a resistor divider from VREFB
to ANAGND, with the output voltage connecting to the VHYST pin. The hysteresis of the comparator will be equal
to twice the voltage difference between the VREFB and VHYST pins. The propagation delay from the comparator
inputs to the driver outputs is 300 ns (maximum). The maximum hysteresis setting is 60 mV.
low-side driver
The low-side driver is designed to drive low-Rds(on) n-channel MOSFETs. The current rating of the driver is
2 A, source and sink. The bias to the low-side driver is derived from DRV.
high-side driver
The high-side driver is designed to drive low-Rds(on) n-channel MOSFETs. The current rating of the driver is
2 A, source and sink. The high-side driver can be configured either as a ground-referenced driver or as a floating
bootstrap driver. When configured as a floating driver, the bias voltage to the driver is developed from DRV. The
internal bootstrap diode connected between the DRV and BOOT pins is a Schottky for improved drive efficiency.
The maximum voltage that can be applied between BOOT and DRVGND is 30 V. The driver can be referenced
to ground by connecting BOOTLO to DRVGND, and connecting BOOT to a voltage supply.
deadtime control
Deadtime control prevents shoot-through current from flowing through the main power FETs during switching
transitions by actively controlling the turnon times of the MOSFET drivers. The high-side driver is not allowed
to turn on until the gate-drive voltage to the low-side FETs is below 2 V; the low-side driver is not allowed to turn
on until the voltage at the junction of the high-side and low-side FETs (Vphase) is below 2 V.
current sensing
Current sensing is achieved by sampling and holding the voltage across the high-side power FETs while the
high-side FETs are on. The sampling network consists of an internal 85-Ω switch and an external ceramic hold
capacitor. Recommended value of the hold capacitor is between 0.033 µF and 0.1 µF. Internal logic controls
the turnon and turnoff of the sample/hold switch such that the switch does not turn on until the Vphase voltage
transitions high, and the switch turns off when the input to the high-side driver goes low. The sampling will occur
only when the high-side FETs are conducting current. The voltage on the IOUT pin equals 2 times the sensed
high-side voltage. In applications where a higher accuracy in current sensing is required, a sense resistor can
be placed in series with the high-side FETs, and the voltage across the sense resistor can be sampled by the
current sensing circuit.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
SLVS201A − JUNE 1999 − REVISED JULY 1999
detailed description (continued)
inhibit
INHIBIT is a TTL-compatible digital input used to enable the controller. When INHIBIT is low, the output drivers
are low and the slowstart capacitor is discharged. When INHIBIT goes high, the short across the slowstart
capacitor is released and normal converter operation begins. The 5-V supply must be above UVLO thresholds
before the controller is allowed to start up. The inhibit start threshold is 2.1 V and the hysteresis is 100 mV for
the INHIBIT comparator.
VCC undervoltage lockout (UVLO)
The undervoltage lockout circuit disables the controller while the VCC supply is below the 4-V start threshold
during power up. When the controller is disabled, the output drivers will be low and the slowstart capacitor is
discharged. When VCC exceeds the start threshold, the short across the slowstart capacitor is released and
normal converter operation begins. There is a 0.5-V hysteresis in the undervoltage lockout circuit for noise
immunity.
slowstart
The slowstart circuit controls the rate at which VO powers up. A capacitor is connected between SLOWST and
ANAGND and is charged by an internal current source. The current source is proportional to the reference
voltage, so that the charging rate of CSLOWST is proportional to the reference voltage. By making the charging
current proportional to VREF, the power-up time for VO will be independent of VREF. Thus, CSLOWST can remain
the same value for all VP settings. The slowstart charging current is determined by the following equation:
Islowstart = I(VREFB) / 5 (amps)
Where I(VREFB) is the current flowing out of VREFB.
It is recommended that no additional loads be connected to VREFB, other than the resistor divider for setting the
hysteresis voltage. The maximum current that can be sourced by the VREFB circuit is 500 µA. The equation for
setting the slowstart time is:
tSLOWST = 5 × CSLOWST × RVREFB
(seconds)
Where RVREFB is the total external resistance from VREFB to ANAGND.
power good
The power-good circuit monitors for an undervoltage condition on VO. If VO is 7% below VREF, then the PWRGD
pin is pulled low. PWRGD is an open-drain output.
overvoltage protection
The overvoltage protection (OVP) circuit monitors VO for an overvoltage condition. If VO is 15% above VREF,
then a fault latch is set and both output drivers are turned off. The latch will remain set until VCC goes below the
undervoltage lockout value or INHIBIT is low. A 3-µs deglitch timer is included for noise immunity. Refer to the
LODRV section for information on how to protect the microprocessor against overvoltages due to a shorted
high-side power FET.
6
POST OFFICE BOX 655303
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SLVS201A − JUNE 1999 − REVISED JULY 1999
detailed description (continued)
overcurrent protection
The overcurrent protection (OCP) circuit monitors the current through the high-side FET. The overcurrent
threshold is adjustable with an external resistor divider between IOUT and ANAGND, with the divider voltage
connected to the OCP pin. If the voltage on OCP exceeds 100 mV, then a fault latch is set and the output drivers
are turned off. The latch will remain set until VCC goes below the undervoltage lockout value and back up above
3.6 V or INHIBIT is similarly brought below its stop threshold and back above its start threshold. A 3-µs deglitch
timer is included for noise immunity. The OCP circuit is also designed to protect the high-side power FET against
a short-to-ground fault on the terminal common to both power FETs.
LODRV
The LODRV circuit is designed to protect the microprocessor against overvoltages that can occur if the high-side
power FETs become shorted. External components sensing an overvoltage condition are required to use this
feature. When an overvoltage fault occurs, the low-side FETs are used as a crowbar. LODRV is pulled low and
the low-side FET will be turned on, overriding all control signals inside the TPS5210 controller. The crowbar
action will short the input supply to ground through the faulted high-side FETs and the low-side FETs. A fuse
in series with Vin should be added to disconnect the short circuit.
Table 1. Voltage Programming Codes
VP TERMINALS
(0 = GND, 1 = floating or pull-up to 5 V)
VREF
VP4
VP3
VP2
VP1
VP0
(Vdc)
0
1
1
1
1
1.30
0
1
1
1
0
1.35
0
1
1
0
1
1.40
0
1
1
0
0
1.45
0
1
0
1
1
1.50
0
1
0
1
0
1.55
0
1
0
0
1
1.60
0
1
0
0
0
1.65
0
0
1
1
1
1.70
0
0
1
1
0
1.75
0
0
1
0
1
1.80
0
0
1
0
0
1.85
0
0
0
1
1
1.90
0
0
0
1
0
1.95
0
0
0
0
1
2.00
0
0
0
0
0
2.05
1
1
1
1
1
No CPU
1
1
1
1
0
2.10
1
1
1
0
1
2.20
1
1
1
0
0
2.30
1
1
0
1
1
2.40
1
1
0
1
0
2.50
1
1
0
0
1
2.60
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7
SLVS201A − JUNE 1999 − REVISED JULY 1999
Table 1. Voltage Programming Codes (Continued)
VP TERMINALS
(0 = GND, 1 = floating or pull-up to 5 V)
VREF
VP4
VP3
VP2
VP1
VP0
(Vdc)
1
1
0
0
0
2.60
1
0
1
1
1
2.60
1
0
1
1
0
2.60
1
0
1
0
1
2.60
1
0
1
0
0
2.60
1
0
0
1
1
2.60
1
0
0
1
0
2.60
1
0
0
0
1
2.60
1
0
0
0
0
2.60
absolute maximum ratings over operating virtual junction temperature (unless otherwise noted)†
Supply voltage range, VCC (see Note1), BIAS, DRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V
Input voltage range: BOOT to DRVGND (High-side Driver ON) . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 30 V
BOOT to HIGHDRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 15 V
BOOT to BOOTLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 15 V
INHIBIT, VPx, LODRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7.3 V
PWRGD, OCP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V
LOHIB, LOSENSE, IOUTLO, HISENSE . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V
VSENSE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 5 V
Voltage difference between ANAGND and DRVGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.5 V
Output current, VREFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Unless otherwise specified, all voltages are with respect to ANAGND.
DISSIPATION RATING TABLE
8
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
PWP
1150 mW
11.5 mW/°C
630 mW
460 mW
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SLVS201A − JUNE 1999 − REVISED JULY 1999
recommended operating conditions
MIN
MAX
UNIT
Supply voltage, VCC
Input voltage, BOOT to DRVGND
4.5
6
V
0
28
V
Input voltage, BOOT to BOOTLO
0
13
V
Input voltage, INHIBIT, VPx, LODRV, PWRGD, OCP
0
6
V
Input voltage, LOHIB, LOSENSE, IOUTLO, HISENSE, BIAS, DRV
0
6
V
Input voltage, VSENSE
0
4.5
V
Voltage difference between ANAGND and DRVGND
Output current, VREFB†
0
±0.2
V
0
0.4
mA
† Not recommended to load VREFB other than to set hystersis since IVREFB sets slowstart time.
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 5 V (unless otherwise noted)
reference/voltage programming
PARAMETER
VREF
Cumulative voltage reference
accuracy
VPx
High-level input voltage
VPx
Low-level input voltage
TEST CONDITIONS
MIN
VCC = 4.5 to 5.5 V, 1.3 V ≤ VREF ≤ 2.6 V,
See Note 2
TYP
−1.5%
MAX
1.5%
2.25
V
1
Output voltage
VREFB
IVREFB = 50 µA
Output regulation
10 µA ≤ IO ≤ 500 µA
VPx
Input pullup resistance
VREF−10 mV
UNIT
VREF VREF+10 mV
V
V
2
mV
190
kΩ
NOTES: 2. Cumulative reference accuracy is the combined accuracy of the reference voltage and the input offset voltage of the hysteretic
comparator. Cumulative accuracy equals the average of the high-level and low-level thresholds of the hysteretic comparator.
3. This parameter is ensured by design and is not production tested.
POST OFFICE BOX 655303
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9
SLVS201A − JUNE 1999 − REVISED JULY 1999
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 5 V (unless otherwise noted) (continued)
power good
PARAMETER
TEST CONDITIONS
Undervoltage trip threshold
VOL
IOH
Low-level output voltage
Vhys
Hysteresis voltage
MIN
90
IO = 2.5 mA
VPWRGD = 5 V
High-level input current
TYP
93
0.4
MAX
UNIT
95 %VREF
V
0.75
1
µA
3
%VREF
slowstart
PARAMETER
TEST CONDITIONS
Charge current
VSLOWST = 0.5 V,
IVREFB = 65 µA
Discharge current
VSLOWST = 1 V
VVREFB = 1.3 V,
Comparator input offset voltage
Comparator input bias current
MIN
TYP
MAX
UNIT
10.4
13
15.6
µA
3
mA
−18
See Note 3
18
10
Comparator hysteresis
−8.5
mV
100
nA
8.5
mV
NOTE 3: This parameter is ensured by design and is not production tested.
hysteretic comparator
PARAMETER
TEST CONDITIONS
Input offset voltage
See Note 3
Input bias current
See Note 3
Hysteresis accuracy
VREFB – VHYST = 15 mV
(Hysteresis window = 30 mV)
MIN
TYP
−4
4
−5
Maximum hysteresis setting
VREFB – VHYST = 30 mV
NOTE 3: This parameter is ensured by design and is not production tested.
MAX
UNIT
mV
500
nA
5
mV
60
mV
thermal shutdown
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
See Note 3
160
°C
Hysteresis
See Note 3
10
°C
NOTE 3: This parameter is ensured by design and is not production tested.
10
MIN
Over temperature trip point
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SLVS201A − JUNE 1999 − REVISED JULY 1999
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 5 V (unless otherwise noted) (continued)
high-side VDS sensing
PARAMETER
TEST CONDITIONS
MIN
Gain
Sink current
VHISENSE = 5 V,
VIOUTLO = 5 V
VLOSENSE = 4.5 V
VHISENSE = 5 V,
IOUT
Source current
VIOUT = 0.5 V,
VIOUTLO = 4.5 V
IOUT
Sink current
VIOUT = 0.05 V, VHISENSE = 5 V,
VIOUTLO = 5 V
Output voltage swing
VHISENSE = 4.5 V, RIOUT = 10 kΩ
VHISENSE = 3 V, RIOUT = 10 kΩ
High-level input voltage
LOSENSE
MAX
2
Initial accuracy
IOUTLO
TYP
Low-level input voltage
Sample/hold resistance
194
V/V
206
mV
250
nA
500
µA
50
µA
0
1
V
0
0.75
V
2.85
V
VHISENSE = 4.5 V (see Note 3)
4.5 V ≤ VHISENSE ≤ 5.5 V,
LOSENSE connected to HISENSE,
VHISENSE − VIOUTLO = 0.15 V
3 V ≤ VHISENSE ≤ 3.6 V,
LOSENSE connected to HISENSE,
VHISENSE − VIOUTLO = 0.15 V
VHISENSE = 5.5 V to 3 V,
VHISENSE − VOUTLO = 100 mV
NOTE 3. This parameter is ensured by design and is not production tested.
CMRR
UNIT
2.4
62
85
V
123
Ω
67
95
62
65
144
dB
inhibit
MIN
TYP
MAX
UNIT
Start threshold
PARAMETER
TEST CONDITIONS
1.85
2.1
2.35
V
Hysteresis
0.08
0.1
0.14
V
Stop threshold
1.76
V
overvoltage protection
PARAMETER
TEST CONDITIONS
Overvoltage trip threshold
Hysteresis
MIN
TYP
112
115
See Note 3
10
MAX
UNIT
120 %VREF
mV
NOTE 3: This parameter is ensured by design and is not production tested.
overcurrent protection
PARAMETER
TEST CONDITIONS
OCP trip threshold
Input bias current
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MIN
TYP
MAX
UNIT
80
100
125
mV
100
nA
11
SLVS201A − JUNE 1999 − REVISED JULY 1999
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 5 V (unless otherwise noted) (continued)
deadtime
PARAMETER
TEST CONDITIONS
High-level input voltage
LOHIB
LOWDR
MIN
TYP
MAX
UNIT
2.4
Low-level input voltage
1.33
High-level input voltage
See Note 3
Low-level input voltage
See Note 3
V
2.38
1.23
V
NOTE 3: This parameter is ensured by design and is not production tested.
LODRV
PARAMETER
TEST CONDITIONS
High-level input voltage
LODRV
MIN
TYP
MAX
UNIT
1.70
Low-level input voltage
0.95
V
input undervoltage lockout
PARAMETER
12
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Start threshold
3.8
4.08
4.46
V
Hysteresis
0.4
0.5
0.6
V
Stop threshold
3.3
POST OFFICE BOX 655303
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V
SLVS201A − JUNE 1999 − REVISED JULY 1999
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 5 V (unless otherwise noted) (continued)
output drivers
PARAMETER
Peak output
current
(see Note 4)
TEST CONDITIONS
Duty cycle < 2%,
TJ = 125°C,
High-side source
VHIGHDR = 0.5 V (source) or 4 V (sink),
See Note 3
Low-side sink
Duty Cycle < 2%,
TJ = 125°C,
Low-side source
VLOWDR = 0.5 V (source) or 4 V (sink),
See Note 3
High-side sink
Output
resistance
(see Note 4)
tpw < 100 µs,
VBOOT – VBOOTLO = 4.5 V,
High-side sink
tpw < 100 µs,
VDRV = 4.5 V,
MIN
TYP
Low-side sink
1.2
A
1.3
1.4
5
75
9
TJ = 125
125°C,
C,
VDRV = 4.5 V,
VLOWDR = 4 V (source) or 0.5 V (sink)
Low-side source
UNIT
0.7
125°C,
VBOOT – VBOOTLO = 4.5 V,
TJ = 125
C,
VHIGHDR = 4 V (source) or 0.5 V (sink)
High-side source
MAX
Ω
75
NOTES: 3. This parameter is ensured by design and is not production tested.
4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the Rds(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
supply current
PARAMETER
VCC
VCC
TEST CONDITIONS
Supply voltage
range
Quiescent
current
High-side
driver
quiescent
current
MIN
TYP
MAX
4.5
5
5.5
10
VINHIBIT = 5 V,
VCC > 4.46 V at startup,
VP code ≠ 11111,
VBOOTLO = 0 V
3
VINHIBIT = 5 V,
VCC > 4.46 V at startup,
CHIGHDR = 50 pF,
fSWX = 200 kHz,
VP code ≠ 11111,
VBOOTLO = 0 V,
CLOWDR = 50 pF,
See Note 3
5
VINHIBIT = 0 V or VP code = 11111 or VCC < 3.8 V at startup,
VBOOT = 13 V,
VBOOTLO = 0 V
VINHIBIT = 5 V,
VP code ≠ 11111, VCC > 4.46 V at startup,
VBOOT = 13 V,
VBOOTLO = 0 V,
CHIGHDR = 50 pF,
fSWX = 200 kHz (see Note 3)
UNIT
V
mA
90
2
µA
mA
NOTE 3: This parameter is ensured by design and is not production tested.
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13
SLVS201A − JUNE 1999 − REVISED JULY 1999
switching characteristics over recommended operating virtual-junction temperature range,
VCC = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VSENSE to HIGHDR or
LOWDR (excluding deadtime)
Propagation delay
MIN
1.3 V ≤ VVREF ≤ 2.6 V, 10 mV overdrive
(see Note 3)
OCP comparator
OVP comparator
Deglitch time (Includes
comparator propagation
delay)
Response time
MAX
UNIT
230
300
ns
1
µs
1
See Note 3
PWRGD comparator
1
SLOWST comparator
Overdrive = 10 mV (see Note 3)
HIGHDR output
CL = 6 nF,
VBOOTLO = 0 V,
VBOOT = 4.5 V,
TJ = 125°C
LOWDR output
CL = 6 nF,
TJ = 125°C
VDRV = 4.5 V,
Rise and fall time
TYP
OCP
700
1000
120
ns
80
2
5
1.8
5
See Note 3
OVP
High-side VDS sensing
VHISENSE = 4.5 V,
VIOUTLO pulsed from 4.5 V to 4.4 V,
100 ns rise/fall times (see Note 3)
3
VHISENSE = 3 V,
VIOUTLO pulsed from 3 V to 2.9 V,
100 ns rise/fall times (see Note 3)
3
Short-circuit protection
rising-edge delay
SCP
LOSENSE = 0 V (see Note 3)
Turnon/turnoff delay
VDS sensing sample/hold
switch
Crossover delay time
ns
µss
µss
300
500
ns
3 V ≤ VHISENSE ≤ 5.5 V,
VLOSENSE = VHISENSE (see Note 3)
30
100
ns
LOWDR to HIGHDRV, and
LOHIB to LOWDR
See Note 3
50
200
ns
Prefilter pole frequency
Hysteretic comparator
See Note 3
Propagation delay
LODRV
See Note 3
NOTE 3: This parameter is ensured by design and is not production tested.
14
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
MHz
400
ns
SLVS201A − JUNE 1999 − REVISED JULY 1999
TYPICAL CHARACTERISTICS
SLOWSTART TIME
vs
SLOWSTART CAPACITANCE
SLOWSTART TIME
vs
SUPPLY CURRENT (VREFB)
100
1000
V(VREFB) = 2 V
I(VREFB) = 100 µA
TJ = 27°C
V(VREFB) = 2 V
CS = 0.1 µF
TJ = 27°C
Slowstart Time − ms
Slowstart Time − ms
10
1
100
10
0.1
0.01
0.0001
0.0010
0.0100
0.1000
1
1
1
10
Slowstart Capacitance − µF
Figure 1
DRIVER
DRIVER
RISE TIME
vs
LOAD CAPACITANCE
FALL TIME
vs
LOAD CAPACITANCE
1000
TJ = 27°C
TJ = 27°C
100
t f − Fall Time − ns
t r − Rise Time − ns
1000
Figure 2
1000
High Side
Low Side
10
1
0.1
100
ICC − Supply Current (VREFB) − µA
1
10
100
100
High Side
Low Side
10
1
0.1
CL − Load Capacitance − nF
1
10
100
CL − Load Capacitance − nF
Figure 3
Figure 4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
15
SLVS201A − JUNE 1999 − REVISED JULY 1999
TYPICAL CHARACTERISTICS
OCP THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
OVP THRESHOLD
vs
JUNCTION TEMPERATURE
105
118.0
117.5
OCP Threshold Voltage − mV
OVP Threshold − %
117.0
116.5
116.0
115.5
115.0
114.5
114.0
103
101
99
97
113.5
95
113.0
0
25
50
75
100
TJ − Junction Temperature − °C
0
125
25
50
75
100
125
TJ − Junction Temperature − °C
Figure 5
Figure 6
INHIBIT START THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
INHIBIT HYSTERESIS VOLTAGE
vs
JUNCTION TEMPERATURE
2.10
110
Inhibit Hysteresis Voltage − mV
Inhibit Start Threshold Voltage − V
109
2.05
2.00
1.95
108
107
106
105
104
103
102
101
1.90
100
0
25
50
75
100
TJ − Junction Temperature − °C
125
0
Figure 7
16
25
50
75
100
TJ − Junction Temperature − °C
Figure 8
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125
SLVS201A − JUNE 1999 − REVISED JULY 1999
TYPICAL CHARACTERISTICS
UVLO START THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
UVLO HYSTERESIS
vs
JUNCTION TEMPERATURE
4.020
470
VI = 5 V
VI = 5 V
469
4.016
468
UVLO Hysteresis − mV
UVLO Start Threshold Voltage − V
4.018
4.014
4.012
4.010
4.008
4.006
467
466
465
464
463
4.004
462
4.002
461
4.000
460
0
25
50
75
100
TJ − Junction Temperature − °C
125
0
25
50
75
100
TJ − Junction Temperature − °C
Figure 9
Figure 10
QUIESCENT CURRENT
vs
JUNCTION TEMPERATURE
POWERGOOD THRESHOLD
vs
JUNCTION TEMPERATURE
2.0
93.0
VI = 5 V
1.9
92.9
1.8
92.8
Powergood Threshold − %
Quiescent Current − mA
125
1.7
1.6
1.5
1.4
1.3
92.7
92.6
92.5
92.4
92.3
1.2
92.2
1.1
92.1
1.0
92.0
0
25
50
75
100
TJ − Junction Temperature − °C
125
0
Figure 11
25
50
75
100
TJ − Junction Temperature − °C
125
Figure 12
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
17
SLVS201A − JUNE 1999 − REVISED JULY 1999
TYPICAL CHARACTERISTICS
DRIVER
SLOW START CHARGE CURRENT
vs
JUNCTION TEMPERATURE
HIGH-SIDE OUTPUT RESISTANCE
vs
JUNCTION TEMPERATURE
15
4.0
R O − High-Side Output Resistance − Ω
Slow Start Charge Current − µ A
V(VREFB) = 1.3 V
R(VREFB) = 20 kΩ
14
13
12
11
10
0
25
50
75
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
125
0
TJ − Junction Temperature − °C
25
50
75
100
TJ − Junction Temperature − °C
Figure 13
125
Figure 14
DRIVER
LOW-SIDE OUTPUT RESISTANCE
vs
JUNCTION TEMPERATURE
SENSING SAMPLE/HOLD RESISTANCE
vs
JUNCTION TEMPERATURE
125
R O − Sensing Sample/Hold Resistance − Ω
R O − Low-Side Output Resistance − Ω
8
7
6
5
4
3
2
1
0
V(HISENSE) = 5 V
100
75
50
25
0
0
25
50
75
100
TJ − Junction Temperature − °C
125
0
Figure 15
18
25
50
75
100
TJ − Junction Temperature − °C
Figure 16
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• DALLAS, TEXAS 75265
125
SLVS201A − JUNE 1999 − REVISED JULY 1999
APPLICATION INFORMATION
The hysteretic-type controller method used in the TPS56100 controller gives very fast transient response for
today’s high-speed DSP applications. Traditional PWM-type controllers use an oscillator to control the timing
of the control signals used to adjust the output voltage. During a transient load event, the PWM-type controller
must wait until the next oscillator cycle to begin the output voltage adjustment process. This delay causes output
droop (or overshoot) and longer recovery times. Hysteretic-type controllers, such as the TPS56100, are
self-oscillating and require no cycle-time to begin the recovery process. Hysteretic controllers have extremely
high gain and are sensitive to noise. The TPS56100 has internal low-pass noise filters to eliminate much of this
problem, however an external RC low-pass filter between the output and VSENSE input is recommended.
The TPS56100 controller includes all of the functions necessary for a dependable high-efficiency power
converter. High-current synchronous MOSFET drivers are used for fast, low-loss switching allowing for
efficiencies greater than 90%. An internal bootstrap circuit provides the high-side drive voltage necessary for
the upper n-channel MOSFET. Overcurrent protection protects the power supply in case of load faults.
Overvoltage protection protects the load in case of high-side switch failure. Programmable hysteresis allows
users to tailor the output ripple and operating frequency to suit their needs. Slowstart provides a controlled
rampup time for the output voltage eliminating output overshoot. Inhibit is provided for sequencing of the
converter in multiple-voltage circuits. Power good provides an indication that the output voltage is within
operating limits. The design of each of these functions is discussed in detail in the following. Refer to Figure 19
for location of components discussed in the following.
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19
SLVS201A − JUNE 1999 − REVISED JULY 1999
APPLICATION INFORMATION
frequency calculation
A detailed derivation of frequency calculation is shown in the application report, Designing Fast Response
Synchronous Buck Regulators Using the TPS5210, TI Literature number SLVA044. When less accurate results
are acceptable, the simplified equation shown below can be used:
fs ≅
ǒV O
ǒVI
ƪVI * VOƫ
L
Ǔ
ESR
Ǔ
Hysteresis Window
control section
Below are the equations needed to select the various components within the control section. Component
reference numbers refer to the example application given at the end of this section. Details and the derivations
of the equations used in this section are available in the application report Designing Fast Response
Synchronous Buck Regulators Using the TPS5210, TI Literature number SLVA044.
output voltage selection
Of course the most important function of the power supply is to regulate the output voltage to a specific value.
Values between 1.3 V and 2.6 V can be easily set by shorting the correct VP inputs to ground. Values above
the maximum reference voltage (2.6 V) can be set by changing the reference voltage to any convenient voltage
within its range and selecting values for R2 and R3 to give the correct output. Select R3:
R3