TPS61162YFFR

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 TPS61162D Dual-Channel WLED Drivers for Smart Phones 1 Features 3 Description • • • • • • • • • • • • • • • • • • The TPS61162D is a dual-channel WLED driver which provides highly integrated solutions for singlecell Li-ion-battery-powered smart-phone backlighting. The device has a built-in high efficiency boost regulator with integrated 1.5-A/40-V power MOSFET and can support as low as 2.7-V input voltage. With two high current-matching capability current sink regulators, the device can drive up to 7s2p WLED diodes. The boost output can automatically adjust to the WLED forward voltage, allowing very low voltage headroom control, thus improving LED strings efficiency effectively. 1 2.7-V to 6.5-V Input Voltage Integrated 1.5-A/40-V MOSFET 1.2-MHz Switching Frequency Dual Current Sinks of up to 30-mA Current Each 1% Typical Current Matching and Accuracy 26.5-V Overvoltage Protection Threshold Adaptive Boost Output to WLED Voltages Very Low Voltage Headroom Control (90 mV) Flexible Digital and PWM Brightness Control One-Wire Control Interface (EasyScale™) PWM Dimming Control Interface Up to 100:1 PWM Dimming Ratio Up to 10-Bit Dimming Resolution Up to 90% Efficiency Built-in Soft Start Built-in WLED Open and Short Protection Thermal Shutdown Supports 4.7-µH Inductor Application The TPS61162D supports both the PWM dimming interface and one-wire digital EasyScale dimming interface and can realize 9-bit brightness code programming. The TPS61162D integrates built-in soft start, overvoltage, and overcurrent protection, as well as thermal shutdown protections. Device Information(1) PART NUMBER TPS61162D 2 Applications • • • • PACKAGE DSBGA (9) BODY SIZE (MAX) 1.336 mm × 1.336 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Smart Phones PDAs, Handheld Computers GPS Receivers Backlight for Small and Media Form Factor LCD Display With Single-Cell Battery Input Typical Application L1 4.7µH 2.7 V to 6.5 V VBAT R2 10 C1 1 µF D1 SW VIN C2 1 µF C3 1 µF Enable / Disable EN PWM Dimming PWM TPS61162D IFB1 COMP IFB2 C4 330 nF ISET GND R1 63.4 k 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Function ........................... Specifications......................................................... 1 1 1 2 3 3 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 4 4 4 4 5 6 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... EasyScale Timing Requirements.............................. Typical Characteristics .............................................. Detailed Description .............................................. 8 8.1 Overview ................................................................... 8 8.2 Functional Block Diagram ......................................... 8 8.3 Feature Description................................................... 9 8.4 Device Functional Modes........................................ 12 8.5 Programming........................................................... 13 9 Application and Implementation ........................ 16 9.1 Application Information............................................ 16 9.2 Typical Application ................................................. 16 10 Power Supply Recommendations ..................... 22 11 Layout................................................................... 22 11.1 Layout Guidelines ................................................. 22 11.2 Layout Example .................................................... 22 12 Device and Documentation Support ................. 23 12.1 12.2 12.3 12.4 12.5 Device Support...................................................... Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 23 23 23 23 23 13 Mechanical, Packaging, and Orderable Information ........................................................... 23 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (July 2013) to Revision A Page • Added Device Information and Pin Configuration and Functions sections, ESD Ratings table and Thermal Information table with updated thermal values, Feature Description, Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable Information sections..................................................................................................................... 1 • Changed wording of last paragraph of Boost Converter section............................................................................................ 9 • Changed wording of third paragraph of Overvoltage Protection section ............................................................................. 10 • Changed some of the wording of PWM Control Interface section ....................................................................................... 13 • Changed wording of Output Capacitor Selection section..................................................................................................... 18 2 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 5 Device Comparison Table See (1) TA PART NUMBER OPEN LED PROTECTION PACKAGE ORDERING PACKAGE MARKING –40°C to 85°C TPS61162D 26.5 V (typical) 9-pin DSBGA TPS61162DYFFR TPS61162D (1) 6 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. Pin Configuration and Function YFF Package 9-Pin DSBGA Top View YFF Package 9-Pin DSBGA Bottom View ISET IFB2 IFB1 IFB1 IFB2 ISET PWM COMP GND GND COMP PWM EN VIN SW SW VIN EN Pin Functions PIN NUMBER NAME I/O DESCRIPTION A1 ISET I Full-scale LED current set pin. Connecting a resistor to the pin programs the full-scale LED current. A2 IFB2 I Regulated current sink input pin A3 IFB1 I Regulated current sink input pin B1 PWM I PWM dimming signal input B2 COMP O Output of the transconductance error amplifier. Connect external capacitor to this pin to compensate the boost loop. B3 GND O Ground C1 EN I Enable control and one-wire digital signal input C2 VIN I Supply input pin C3 SW I Drain connection of the internal power MOSFET Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 3 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) Voltage (2) MIN MAX UNIT VIN, EN, PWM, IFB1, IFB2 –0.3 7 V COMP, ISET –0.3 3 V SW –0.3 40 V Continuous power dissipation, PD See Thermal Information Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±750 Machine model (MM) 200 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Input voltage, VIN 2.7 6.5 Output voltage, VOUT VIN 27 V Inductor, L 4.7 10 µH Input capacitor, CI 1 Output capacitor, CO 1 Compensation capacitor, CCOMP µF 2.2 µF 100 kHz 330 PWM dimming signal frequency, ƒPWM V 40 nF Operating ambient temperature, TA –40 85 °C Operating junction temperature, TJ –40 125 °C 7.4 Thermal Information TPS61162D THERMAL METRIC (1) YFF (DSBGA) UNIT 9 PINS θJA Junction-to-ambient thermal resistance 107 °C/W θJCtop Junction-to-case (top) thermal resistance 0.9 °C/W θJB Junction-to-board thermal resistance 18.1 °C/W ψJT Junction-to-top characterization parameter 4.0 °C/W ψJB Junction-to-board characterization parameter 18 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 7.5 Electrical Characteristics VIN = 3.6 V, EN = high, PWM = high, IFB current = 20 mA, minimum and maximum values = TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLY VIN Input voltage range 2.7 VIN falling VVIN_UVLO Undervoltage lockout threshold VVIN_HYS VIN UVLO hysteresis IQ Operating quiescent current into VIN Device enable, switching 1.2 MHz and no load, VIN = 3.6 V ISD Shutdown current EN = low 6.5 2.2 VIN rising V 2.3 V 2.45 100 mV 1.2 2 mA 1 2 µA EN and PWM VH EN logic high VL EN logic Low 1.2 V VH PWM logic high VL PWM logic low RPD EN pin and PWM pin internal pulldown resistor tPWM_SD PWM logic low width to shutdown PWM high to low 20 ms tEN_SD EN logic low width to shutdown EN high to low 2.5 ms 1.204 0.4 V 1.2 V 0.4 400 800 V 1600 kΩ CURRENT REGULATION VISET_full ISET pin voltage Full brightness KISET_full Current multiplier Full brightness IFB_avg Current accuracy IISET = 20 μA, D = 100%, 0°C to 70°C –2% IISET = 20 µA, D = 100% –2.3% KM (IMAX – IAVG) / IAVG IIFB_max Current sink maximum output current 1.229 V 2% 2.3% D = 100% 1% D = 25% 1% IISET = 35 μA, each IFBx pin 1.253 1030 2% 30 mA POWER SWITCH RDS(on) Switch MOSFET on-resistance ILEAK_SW Switch MOSFET leakage current VIN = 3.6 V 0.25 VIN = 3 V Ω 0.3 VSW = 35 V, TA = 25°C 1 µA 1500 kHz OSCILLATOR ƒSW Oscillator frequency Dmax Maximum duty cycle Measured on the drive signal of switch MOSFET 1000 1200 91% 95% BOOST VOLTAGE CONTROL VIFB_reg IFBx feedback regulation voltage Isink COMP pin sink current Isource COMP pin source current Gea Error amplifier transconductance Rea Error amplifier output resistance ƒea Error amplifier crossover frequency IIFBx = 20 mA, measured on IFBx pin which has a lower voltage 30 5 pF connected to COMP pin 90 mV 12 µA 5 µA 55 80 µmho 45.5 MΩ 1.65 MHz Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 5 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com Electrical Characteristics (continued) VIN = 3.6 V, EN = high, PWM = high, IFB current = 20 mA, minimum and maximum values = TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 1 1.5 2 UNIT PROTECTION ILIM Switch MOSFET current limit D = Dmax, 0°C to 70°C ILIM_Start Switch MOSFET start-up current limit D = Dmax tHalf_LIM Time window for half current limit VOVP_SW SW pin overvoltage threshold VOVP_IFB IFBx pin overvoltage threshold Measured on IFBx pin VACKNL Acknowledge output voltage low (1) Open drain, Rpullup = 15 kΩ to VIN A 0.7 A 5 ms 25 26.5 28 V 4.2 4.5 4.8 V 0.4 V THERMAL SHUTDOWN Tshutdown Thermal shutdown threshold 160 °C Thys Thermal shutdown hysteresis 15 °C (1) Acknowledge condition active 0; this condition is only applied when the RFA bit is set to 1. To use this feature, master must have an open drain output, and the data line must be pulled up by the master with a resistor load. 7.6 EasyScale Timing Requirements MIN MAX UNIT tes_delay EasyScale detection delay, measured from EN low to high 100 tes_det EasyScale detection time, EN pin low time 260 µs tes_win EasyScale detection window, easured from EN low to high (1) 1 ms tstart Start time of program stream 2 tEOS End time of program stream 2 360 µs tH_LB High time of low bit (Logic 0) 2 180 µs tL_LB Low time of low bit (Logic 0) 2 × tH_LB 360 µs tH_HB High time of high bit (Logic 1) 2 × tL_HB 360 µs tL_HB Low time high bit (Logic 1) 2 180 µs tvalACKN Acknowledge valid time 2 µs tACKN Duration of acknowledge condition 512 µs (1) 6 µs µs To select EasyScale interface, after tes_delay delay from EN low to high, drive EN pin to low for more than tes_det before tes_win expires. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 7.7 Typical Characteristics Ambient temperature is 25°C and VIN is 3.6 V unless otherwise noted. PWM Voltage 2V/div DC PWM Voltage 2V/div DC Output Voltage 10V/div DC Output Voltage 10V/div DC Inductor Current 500mA/div DC Inductor Current 500mA/div DC Output Current 20mA/div DC Output Current 20mA/div DC DUTY = 100% PWM FREQ = 40kHz; DUTY = 50% t - Time - 10ms/div t - Time - 10ms/div 7s2p LEDs L = 4.7 µH VO = 21 V IO = 20 mA/string 7s2p LEDs L = 4.7 µH Figure 1. Start-Up Waveform VO = 21 V Figure 2. Start-Up Waveform PWM Voltage 2V/div DC PWM Voltage 2V/div DC Output Voltage 10V/div DC Output Voltage 10V/div DC Inductor Current 500mA/div DC Inductor Current 500mA/div DC Output Current 20mA/div DC Output Current 20mA/div DC DUTY = 100% PWM FREQ = 40kHz; DUTY = 50% t - Time - 10ms/div t - Time - 10ms/div 7s2p LEDs L = 4.7 µH VO = 21 V 7s2p LEDs L = 4.7 µH IO = 20 mA/string IO = 20 mA/string VSeries1 IN = 3 V VSeries2 IN = 3.6 V VSeries4 IN = 4.2 V VSeries5 IN = 5 V 45 IO - Output Current (mA) VO = 21 V Figure 4. Shutdown Waveform Figure 3. Shutdown Waveform 50 IO = 20 mA/string 40 35 30 25 20 15 10 VIN = 3 V 5 0 0 20 40 60 80 Dimming Duty Cycle (%) 7s2p LEDs RISET = 63.4 kΩ 100 C007 PWM Frequency = 40 kHz Figure 5. Dimming Linearity Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 7 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com 8 Detailed Description 8.1 Overview The TPS61162D is a high-efficiency, dual-channel white LED driver for smart-phone backlighting applications. The device operates over the 2.7-V to 6.5-V input voltage range. The TPS61162D consists of an inductive boost plus two current sink white-LED drivers designed to power one or two LED strings with up to ten LEDs each (up to 26.5 V typical), with a maximum of 30 mA per string. The power for the LED strings comes from an integrated asynchronous backlight boost converter operating at 1.2-MHz switching frequency. LED current is regulated by the low-headroom current sinks. The inductive backlight boost automatically adjusts its output voltage to keep the active current sinks in regulation, while minimizing current sink headroom voltage. Additionally, the TPS61162D includes protection circuits for overcurrent, overvoltage and thermal shutdown protection. 8.2 Functional Block Diagram D1 L1 VBAT R2 10Ω C1 1µ F VOUT C2 1µF SW VIN C3 1 µF UVLO / Internal Regulator SW OVP R Q S OSC OCP Slope Compensation GND S Comp Error Amp Vref COMP IFBx Voltage Detection C4 330nF IFBx OVP EN Enable / Disable Detection Shutdown Control IFB1 EA PWM Duty Detection ISET Analog Dimming Control IFB1 Current Sink R1 63.4kΩ IFB2 IFB2 Current Sink 8 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 8.3 Feature Description 8.3.1 Normal Operation In order to provide high brightness backlighting for large-sized or high-resolution smart-phone panels, a greater number of white LED diodes are used. Having all LED diodes in a string improves overall current matching; however, the output voltage of a boost converter is limited when input voltage is low, and normally the efficiency drops when the output voltage is very high. For these reasons, the TPS61162D is designed to configure the LED diodes in two parallel strings. 8.3.2 Boost Converter The boost converter of the TPS61162D integrates a 40-V, 1.5-A low-side switch MOSFET and has a fixed switching frequency of 1.2 MHz. The control architecture is based on traditional current-mode PWM control. (For operation see Functional Block Diagram.) Two current sinks regulate the dual-channel current, and the boost output is automatically set by the voltage of the regulating IFBx pin. The output of the error amplifier and the sensed current of the switch MOSFET are applied to a control comparator to generate the boost switching duty cycle; slope compensation is added to the current signal to allow stable operation for duty cycles larger than 50%. In order to ensure that both current sinks remain in regulation whenever there is a mismatch in string voltages while the power dissipation of the current sink regulators is minimized, the minimum headroom voltage between IFB1 and IFB2 becomes the regulation point for the boost converter. For example, if the LEDs connected to IFB1 require 20 V, and the LEDs connected to IFB2 require 20.5 V at the programmed current, then the voltage at IFB2 is about 90 mV, and the voltage at IFB1 is about 0.59 V. In other words, the boost makes the cathode of the highest voltage LED string the regulation point. 8.3.3 IFBx Pin Unused If only one channel is needed, a user can easily disable the unused channel by connecting its IFBx pin to ground. If both IFBx pins are connected to ground, the device does not start up. 8.3.4 Enable and Start-Up In order to enable the device from shutdown mode, three conditions have to be met: 1. Power On Reset (POR), that is, VIN voltage is higher than UVLO threshold 2. Logic high on EN pin 3. PWM signal (logic high or PWM pulses) on PWM pin When all these conditions are met, an internal LDO linear regulator is enabled to provide supply to internal circuits, and the device can start up. The TPS61162D supports two dimming interfaces: one-wire digital interface (EasyScale interface) and PWM interface. The device begins an EasyScale detection window after start-up to detect which interface is selected. If the EasyScale interface is needed, signals of a specific pattern must be input into the EN pin during the EasyScale detection window; otherwise, PWM dimming interface is enabled (see details in One-Wire Digital Interface (Easyscale Interface) ). After the EasyScale detection window, the TPS61162D checks the status of IFBx pins. If one IFBx pin is detected to connect to ground, the corresponding channel is disabled and removed from the control loop. The soft start then begins, and the boost converter starts switching. If both IFBx pins are shorted to ground, the TPS61162D does not start up. Either pulling EN pin low for more than 2.5 ms, or pulling the PWM pin low for more than 20 ms, can disable the device, and the TPS61162D enters into shutdown mode. 8.3.5 Soft Start Soft start is implemented internally to prevent voltage overshoot and inrush current. After the IFBx pin status detection, the COMP pin voltage starts ramp up, and the boost starts switching. During the beginning 5 ms (tHalf_LIM) of the switching, the peak current of the switch MOSFET is limited at ILIM_Start (0.7 A typical) to prevent excess inrush input current. After 5 ms the current limit is changed to ILIM (1.5 A typical) to allow the normal operation of the boost converter. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 9 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com Feature Description (continued) 8.3.6 Full-Scale Current Program The dual channels of the TPS61162D can provide up to 30 mA current each — when either the EasyScale interface or PWM interface is selected, the full-scale current (current when dimming duty cycle is 100%) of each channel must be programmed by an external resistor RISET at ISET pin according to Equation 1. VISET _ full  IFB _ full = ´ KISET _ full RISET where • • • • IFB_full = full-scale current of each channel KISET_full = 1030 (Current multiple when dimming duty cycle = 100%) VISET_full = 1.229 V (ISET pin voltage when dimming duty cycle = 100%) RISET = ISET pin resistor (1) 8.3.7 Brightness Control The TPS61162D controls the DC current of the dual channels to realize the brightness dimming. The DC current control is normally referred to as analog dimming mode. When the DC current of LED diode is reduced, the brightness is dimmed. The TPS61162D can receive either the PWM signals at the PWM pin (PWM interface) or digital commands at the EN pin (EasyScale interface) for brightness dimming. If the EasyScale interface is selected, the PWM pin must be kept high; if PWM interface is selected, the EN pin must be kept high. 8.3.8 Undervoltage Lockout An undervoltage lockout circuit prevents the operation of the device at input voltages below undervoltage threshold (2.2 V typical). When the input voltage is below the threshold, the device is shut down. If the input voltage rises by undervoltage lockout hysteresis, the device restarts. 8.3.9 Overvoltage Protection Overvoltage protection circuitry prevents device damage as the result of white LED string disconnection or shortage. The TPS61162D monitors the voltages at the SW and IFBx pins during each switching cycle. If either SW OVP threshold VOVP_SW or IFBx OVP threshold VOVP_FB is reached due to the LED string open or short issue, the protection circuitry is triggered. Refer to Figure 6 and Figure 7 for the protection actions. If one LED string is open, its IFBx pin voltage drops, and the boost output voltage is increased by the control loop as it tries to regulate this lower IFBx voltage to the target value (90 mV typical). The current of the normally operating string is properly regulated but its IFBx voltage rises because of the rise in output voltage. During this process, either the SW voltage reaches the OVP threshold VOVP_SW or the IFBx voltage of the normally operating string reaches its overvoltage threshold VOVP_FB, and the corresponding protection mechanism is triggered. If both LED strings are open, the voltages of both IFBx pins drop to ground, and the boost output voltage is increased by the control loop until it reaches the SW OVP threshold VOVP_SW. At that point the SW OVP protection circuitry is triggered, and the device is latched off. Only the VIN POR pin or EN/PWM pin toggling can restart the device. One LED diode short in a string is allowed in the TPS61162D. If one LED diode in a string is short, the IFBx voltage of the normal string is regulated to about 90 mV, and the IFBx pin voltage of the abnormal string is higher. Typically with only one diode short, the higher IFBx pin voltage does not reach the IFBx OVP threshold VOVP_FB, so the protection circuitry is not triggered. If more than one LED diodes are short in a string, as the boost loop regulates the IFBx normal string voltage to 90 mV, the IFBx pin voltage of the abnormal string is much higher and reaches VOVP_FB — then the protection circuitry is triggered. SW OVP protection is also triggered when the forward voltage drop of an LED string exceeds the SW OVP threshold. In this case, the device turns off the switch FET and shuts down. 10 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 Feature Description (continued) Soft Start / Normal Operation SW > VOVP for 16~32 switching cycles? No Yes Latch off Figure 6. SW OVP Protection Action Normal Operation IFBx > VIFB_OVP for 24~32 switching cycles? No (caused by transient) Yes Another string is no use? Yes (single string application, caused by transient) Boost stops switching, current sink(s) keep on No No (dual string application, caused by transient) Another VIFBx < 0.5V? Yes (caused by open string or more than two LED diodes short in a string) Boost stops switching, disable the current sink with VIFBx < 0.5V VIFBx < VIFB_OVP_hys? Yes (to recover boost switching) Figure 7. VIFBx OVP Protection Action 8.3.10 Overcurrent Protection The TPS61162D has a pulse-by-pulse overcurrent limit. The boost switch turns off when the inductor current reaches this current threshold, and it remains off until the beginning of the next switching cycle. This protects the TPS61162D and external components under overload conditions. 8.3.11 Thermal Shutdown An internal thermal shutdown turns off the device when the typical junction temperature of 160°C is exceeded. The device is released from shutdown automatically when the junction temperature decreases by 15°C. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 11 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com 8.4 Device Functional Modes 8.4.1 One-Wire Digital Interface (Easyscale Interface) The EN pin features a simple digital interface to allow digital brightness control. The digital dimming interface can save the processor power and battery life as it does not require PWM signals all the time, and the processor can enter idle mode if possible. In order to enable the EasyScale interface, the following conditions must be satisfied, and the specific digital pattern on the EN pin must be recognized by the device every time the TPS61162D starts up from shutdown mode: 1. VIN voltage is higher than UVLO threshold and PWM pin is pulled high. 2. Pull the EN pin from low to high to enable the TPS61162D. At this moment, the EasyScale detection window starts. 3. After EasyScale detection delay time (tes_delay = 100 µs), drive EN to low for greater than EasyScale detection time (tes_detect = 260 µs). The third step must be finished before the EasyScale detection window (tes_win = 1 ms) expires; once this step is finished, the EasyScale interface is enabled, and the EasyScale communication can start. Refer to the Figure 8 for a graphical explanation. Insert battery PWM Signal high PWM low Enter ES mode ES Detection Window Programming code Programming code high EN low ES detect time EasyScale mode Shutdown Ramp up delay ES detect delay IFBx Ramp up Programmed value (if not programmed, full current default ) IC Shutdown Startup delay Startup delay Figure 8. EasyScale Interface Detection The TPS61162D supports 9-bit brightness code programming. Using the EasyScale interface, a master can program the 9-bit code D8(MSB) to D0(LSB) to any of 511 steps with a single command. The default code value of D8 to D0 is 111111111 when the device is first enabled, and the programmed value is stored in an internal register and set the dual-channel current according to Equation 2. The code is reset to default value when the device is shut down or disabled. Code I FBx = IFB_full ´ 511 where • • IFB_full = the full-scale LED current set by the RISET at ISET pin Code = the 9-bit brightness code D8 - D0 programmed by the EasyScale interface (2) When the one-wire digital interface at EN pin is selected, the PWM pin can be connected to either the VIN pin or a GPIO (refer to Additional Application Circuits). If the PWM pin is connected to the VIN pin, the EN pin alone can enable and disable the device: • Pulling the EN pin low for more than 2.5 ms disables the device. • If the PWM pin is connected to a GPIO, both PWM and EN signals must be high to enable the device. • Either pulling EN pin low for more than 2.5 ms or pulling PWM pin low for more than 20 ms disables the device. 12 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 Device Functional Modes (continued) 8.4.2 PWM Control Interface The PWM control interface is automatically enabled if the EasyScale interface fails to be enabled during start-up. In this case, the TPS61162D receives PWM dimming signals on the PWM pin to control the backlight brightness. When using PWM interface, the EN pin can be connected to the VIN pin or a GPIO (refer to Additional Application Circuits). If the EN pin is connected to the VIN pin, the PWM pin alone is used to enable and disable the device; applying a signal at the PWM pin enables the device; pulling the PWM pin low for more than 20 ms disables the device; if the EN pin is connected to a GPIO, either pulling the EN pin low for more than 2.5 ms or pulling the PWM pin low for more than 20 ms disables the device. Only after both EN and PWM signals are applied can the TPS61162D start up (see Figure 9). Insert battery Insert battery EN signal EN signal high high EN low low PWM signal PWM signal high high PWM PWM low low PWM mode Startup delay Ramp up Startup delay Shutdown delay Full current x PWM Duty IFBx t Ramp up Shutdown delay Full current x PWM Duty Shut down by PWM signal Shut down by EN signal IFBx t Figure 9. PWM Control Interface Detection When the PWM pin is constantly high, the dual channel current is regulated to full scale according to Equation 1. The PWM pin allows PWM signals to reduce this regulation current according to the PWM duty cycle; therefore, it achieves LED brightness dimming. The relationship between the PWM duty cycle and the IFBx current is given by Equation 3. I FBx = IFB_full ´ Duty where • • • IFBx = the current of each current sink IFB_full = the full-scale LED current Duty = the duty cycle information detected from the PWM signals (3) 8.5 Programming 8.5.1 EasyScale Programming EasyScale is a simple and flexible one-pin interface used to configure the current of the dual channels. The interface is based on a master-slave structure, where the master is typically a microcontroller or application processor and the device is the slave. Figure 10 and Table 1 give an overview of the protocol used by TPS61162D. A command consists of 24 bits, including an 8-bit device address byte and a 16-bit data byte. All 24 bits must be transmitted together each time, and the LSB bit must be transmitted first. The device address byte D7(MSB) to D0(LSB) is fixed to 0x8F. The data byte includes 9 bits D8(MSB) to D0(LSB) for brightness information and an RFA bit. The RFA bit set to 1 indicates the Request for Acknowledge condition. The Acknowledge condition is only applied when the protocol is received correctly. The advantage of EasyScale compared with other one-pin interfaces is that its bit detection is, to a large extent, independent from the bit transmission rate. EasyScale can automatically detect bit rates from 1.7 kBit/second up to 160 kBit/second. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 13 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com Programming (continued) DATA IN Data Byte Start D0 D1 D2 D3 D4 D5 D6 Address Byte D7 D8 Bit 9 RFA Bit 11 ~ Bit 15 D0 1 D1 1 D2 1 D3 1 D4 0 D5 0 D6 0 D7 1 EOS DATA OUT ACK Figure 10. EasyScale Protocol Overview Table 1. EasyScale Bit Description BYTE Device Address Byte (0x8F) Data Byte TRANSMISSION DIRECTION BIT NUMBER NAME 23 (MSB) DA7 DA7 = 1, MSB of device address 22 DA6 DA6 = 0 21 DA5 DA5 = 0 20 DA4 19 DA3 18 DA2 DA2 = 1 17 DA1 DA1 = 1 16 DA0 DA0 = 1, LSB of device address 15 Bit 15 No information. Write 0 to this bit. 14 Bit 14 No information. Write 0 to this bit. 13 Bit 13 No information. Write 0 to this bit. 12 Bit 12 No information. Write 0 to this bit. 11 Bit 11 No information. Write 0 to this bit. 10 RFA Request for acknowledge. If set to 1, the device pulls low the data line when it receives the command well. This feature can only be used when the master has an open drain output stage and the data line needs to be pulled high by the master with a pullup resistor; otherwise, acknowledge condition is not allowed and don't set this bit to 1. 9 Bit 9 8 D8 Data bit 8, MSB of brightness code 7 D7 Data bit 7 6 D6 Data bit 6 5 D5 Data bit 5 4 D4 Data bit 4 3 D3 Data bit 3 2 D2 Data bit 2 1 D1 Data bit 1 0 (LSB) D0 Data bit 0, LSB of brightness code DA4 = 0 IN DA3 = 1 IN t start DESCRIPTION No information. Write 0 to this bit. Data Byte Address Byte Static High Static High DATA IN D0 D8 Bit 9 RFA Bit 15 DA0 DA7 1 0 0 0 0 1 1 tEOS Figure 11. EasyScale Timing With RFA = 0 14 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 t start DATA IN Data Byte Address Byte Static High Static High D0 D8 Bit 9 RFA Bit 15 DA0 DA7 1 0 0 1 0 1 1 tvalACK Acknowledge true, Data line ACKN pulled down by the IC DATA OUT (ACKN) Master needs to pull up Data line via a pullup resistor to detect ACKN DATA OUT (ACK) ACK Acknowledge false, no pull down Figure 12. EasyScale Timing With RFA = 1 tLow tHigh tLow Low Bit (Logic 0) tHigh High Bit (Logic 1) Figure 13. Easyscale — Bit Coding The 24-bit command must be transmitted with LSB first and MSB last. Figure 11 shows the protocol without acknowledge request (Bit RFA = 0), Figure 12 with acknowledge request (Bit RFA = 1). Before the command transmission, a start condition must be applied. For this, the EN pin must be pulled high for at least tstart (2 μs) before the bit transmission starts with the falling edge. If the EN pin is already at high level, no start condition is needed. The transmission of each command is closed with an End of Stream condition for at least tEOS (2 μs). The bit detection is based on a Logic Detection scheme, where the criterion is the relation between tLOW and tHIGH (refer to Figure 13). It can be simplified to: Low Bit (Logic 0): tLOW ≥ 2 × tHIGH High Bit (Logic 1): tHIGH ≥ 2 × tLOW The bit detection starts with a falling edge on the EN pin and ends with the next falling edge. Depending on the relation between tHIGH and tLOW, the logic 0 or 1 is detected. The acknowledge condition is only applied if: • Acknowledge is requested by setting RFA bit to 1. • The transmitted device address matches with the device address of the device. • A total of 24 bits are received correctly. If above conditions are met, after tvalACK delay from the moment when the last falling edge of the protocol is detected, an internal ACKN-MOSFET is turned on to pull the EN pin low for the time tACKN, which is 512 μs maximum, then the acknowledge condition is valid. During the tvalACK delay, the master controller keeps the line low; after the delay, it must release the line by outputting high impedance and then detect the acknowledge condition. If it reads back a logic 0, the device has received the command correctly. The EN pin can be used again by the master when the acknowledge condition ends after tACKN time. Note that the acknowledge condition can only be requested when the master device has an open drain output. For a push-pull output stage, the use of a series resistor in the EN line to limit the current to 500 μA is recommended to for such cases as: • An accidentally requested acknowledge, or • To protect the internal ACKN-MOSFET. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 15 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The TPS61162D provides a complete high-performance LED lighting solution for mobile handsets. It can drive up to 2 strings of white LEDs with up to 10 LEDs per string. A boost converter generates the high voltage required for the LEDs. LED brightness can be controlled either by the PWM dimming interface or by the single-wire EasyScale dimming interface. 9.2 Typical Application L1 4.7µH 2.7V ~ 6.5V D1 VBAT R2 10 C1 1µF C2 1µF SW VIN C3 1µF Enable / Disable EN PWM Dimming PWM TPS61162D IFB1 COMP IFB2 C4 330nF ISET R1 63.4k GND Figure 14. TPS61162D Typical Application 9.2.1 Design Requirements For typical WLED-driver applications, use the parameters listed in Table 2. Table 2. Design Parameters 16 DESIGN PARAMETER EXAMPLE VALUE Input voltage range 2.7 V to 6.5 V Boost switching frequency (maximum) 1500 kHz Efficiency up to 90% Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 9.2.2 Detailed Design Procedure 9.2.2.1 Inductor Selection Because the selection of inductor affects steady-state operation of the power supply, transient behavior, loop stability, and boost converter efficiency, the inductor is one of the most important components in switching power regulator design. There are three specifications most important to performance of the inductor: inductor value, DC resistance (DCR), and saturation current. The TPS61162D is designed to work with inductor values from 4.7 µH to 10 µH to support all applications. A 4.7-µH inductor is typically available in a smaller or lower profile package, while a 10-µH inductor produces lower inductor ripple. If the boost output current is limited by the overcurrent protection of the device, using a 10-µH inductor may maximize the output current capability of the controller. A 22-µH inductor can also be used for some applications, such as 6s2p and 7s2p, but may cause stability issues when more than eight WLED diodes are connected per string. Therefore, customers must verify the inductor in their application if it is different from the values in Recommended Operating Conditions. Inductor values can have ±20% or even ±30% tolerance with no current bias. When the inductor current approaches saturation level, its inductance can decrease 20% to 35% from the 0-A value depending on how the inductor vendor defines saturation. When selecting an inductor, user must confirm its rated current, especially the saturation current, is larger than its peak current during the operation. Follow Equation 4 to Equation 6 to calculate the peak current of the inductor. To calculate the worst-case current, use the minimum input voltage, maximum output voltage, and maximum load current of the application. In order to leave enough design margin, the minimum switching frequency (1 MHz for TPS61162D), the inductor value with –30% tolerance, and a low power conversion efficiency, such as 80% or lower are recommended for the calculation. In a boost regulator, the inductor DC current can be calculated as Equation 4. V ´I IDC = OUT OUT VIN ´ h where • • • • VOUT = boost output voltage IOUT = boost output current VIN = boost input voltage η = boost power conversion efficiency (4) The inductor current peak-to-peak ripple can be calculated as Equation 5. 1 IPP = æ 1 1 ö + L´ç ÷ ´ FS è VOUT - VIN VIN ø where • • • • • IPP = inductor peak-to-peak ripple L = inductor value FS = boost switching frequency VOUT = boost output voltage VIN = boost input voltage (5) Therefore, the peak current IP detected by the inductor is calculated with Equation 6. IP = IDC + IPP 2 (6) Select an inductor with saturation current over the calculated peak current. If the calculated peak current is larger than the switch MOSFET current limit ILIM, use a larger inductor, such as 10 µH, and make sure its peak current is below ILIM. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 17 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com Boost converter efficiency is dependent on the resistance of its current path, the switching losses associated with the switch MOSFET and power diode, and core loss of the inductor. The TPS61162D has optimized the internal switch resistance, however, the overall efficiency is affected a lot by the DCR of the inductor, equivalent series resistance (ESR) at the switching frequency, and the core loss. Core loss is related to the core material, and different inductors have different core loss. For a certain inductor, larger current ripple generates higher DCR/ESR conduction losses as well as higher core loss. Inductor data sheets do not typically provide the ESR and core loss information; if needed, consult the inductor vendor for detailed information. Generally, TI recommends an inductor with lower DCR/ESR for the TPS61162D application. However, there is a trade-off between the inductance of the inductor, DCR/ESR resistance, and the inductor footprint; furthermore, shielded inductors typically have higher DCR than unshielded ones. Table 3 lists some recommended inductors for the TPS61162D. Verify whether the recommended inductor can support the target application using Equation 4, Equation 5, and Equation 6 as well as bench validation. Table 3. Recommended Inductors PART NUMBER L (µH) DCR MAX (mΩ) SATURATION CURRENT (A) SIZE (L × W × H mm) VENDOR LPS4018-472ML 4.7 125 1.9 4 × 4 × 1.8 Coilcraft LPS4018-682ML 6.8 150 1.3 4 × 4 × 1.8 Coilcraft LPS4018-103ML 10 200 1.3 4 × 4 × 1.8 Coilcraft PCMB051B-4R7M 4.7 163 2.7 5.4 × 5.2 × 1.2 Cyntec PCMB051B-6R8M 6.8 250 2.3 5.4 × 5.2 × 1.2 Cyntec 9.2.2.2 Schottky Diode Selection The TPS61162D demands a low forward voltage, high-speed, and low-capacitance Schottky diode for optimum efficiency. Ensure that the diode average and peak current rating exceeds the average output current and peak inductor current. In addition, the reverse breakdown voltage of the diode must exceed the open LED-protection voltage. TI recommends ONSemi MBR0540 and NSR05F40 and Vishay MSS1P4 for the TPS61162D. 9.2.2.3 Compensation Capacitor Selection The compensation capacitor C4 (refer to Additional Application Circuits) connected from the COMP pin to GND, is used to stabilize the feedback loop of the TPS61162D. A 330-nF ceramic capacitor for C4 is suitable for most applications. A 470-nF is also acceptable for some applications, and customers are suggested to verify it in their applications. 9.2.2.4 Output Capacitor Selection Selection of the output capacitor is primarily to meet the requirement for the output ripple and loop stability. The output ripple voltage is related to the capacitance and the ESR of the capacitor. A 1-µF to 2.2-µF ceramic type X5R or X7R capacitor is recommended. Ceramic capacitors have low ESR so the contribution of the ESR component to the output ripple is negligible. Assuming a capacitor with zero ESR, the output ripple can be calculated with Equation 7. (V - VIN ) ´ IOUT Vripple = OUT VOUT ´ FS ´ COUT where • Vripple = peak-to-peak output ripple (7) The additional part of ripple caused by the ESR is calculated using Vripple_ESR = IOUT × RESR and can be ignored for ceramic capacitors. NOTE Capacitor degradation greatly increases the ripple. Select a capacitor with 50-V rated voltage to reduce the degradation at the output voltage. If the output ripple is too large, choosing a capacitor with less of a degradation effect or with a higher-rated voltage could be helpful. 18 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 9.2.3 Application Curves Ambient temperature is 25°C and VIN is 3.6 V, unless otherwise noted. 100 100 VIN = 3 V 90 90 85 85 80 75 70 VO = 15 V, 5s2p, 20 mA/string 65 VSeries2 IN = 3 V VSeries4 IN = 3.6 V 60 50 20 40 60 80 70 VIN =3V Series1 VO = 18 V, 6s2p, 20 mA/string VIN = 3.6 V Series2 Series3 VIN = 4.2 V 55 Series4 VIN =5V 50 0 20 40 60 80 100 Dimming Duty Cycle (%) C001 PWM Frequency = 40 kHz L = 10 µH C002 PWM Frequency = 40 kHz Figure 15. Efficiency vs Dimming Duty Cycle L = 10 µH Figure 16. Efficiency vs Dimming Duty Cycle 100 SW Voltage 20V/div DC 95 90 Output Voltage 100mV/div AC Inductor Current 500mA/div DC 85 Efficiency (%) 75 60 100 Dimming Duty Cycle (%) 80 65 VSeries5 IN = 4.2 V VSeries6 IN = 5 V 55 0 VIN = 3 V 95 Efficiency (%) Efficiency (%) 95 80 VIN = 3 V 75 70 65 VO = 21 V, 7s2p, 20 mA/string 60 VSeries1 IN = 3 V VSeries2 IN = 3.6 V VSeries4 IN = 4.2 V VSeries5 IN = 5 V 55 50 0 20 40 60 80 DUTY = 100% 100 Dimming Duty Cycle (%) PWM Frequency = 40 kHz Output Current 20mA/div DC C003 L = 10 µH t - Time - 1µs/div 7s2p LEDs L = 4.7 µH Figure 17. Efficiency vs Dimming Duty Cycle VO = 21 V IO = 20 mA/string Figure 18. Switching Waveform SW Voltage 20V/div DC Output Voltage 50mV/div AC Inductor Current 500mA/div DC Output Current 5mA/div DC 7s2p LEDs PWM FREQ = 40kHz; DUTY = 20% VO = 21 V t - Time - 1µs/div IO = 20 mA/string L = 4.7 µH Figure 19. Switching Waveform Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 19 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com 9.2.4 Additional Application Circuits L1 4.7µH 2.7 V to 6.5 V VBAT R2 10 C1 1 µF D1 C2 1 µF SW VIN C3 1 µF Enable / Disable EN PWM Dimming PWM TPS61162D IFB1 COMP IFB2 C4 330 nF ISET R1 63.4 k GND The EN pin can be used to enable or disable the device. Figure 20. TPS61162D Typical Application - PWM Interface Enabled L1 4.7µH 2.7V ~ 6.5V D1 VBAT R2 10 C1 1µF C2 1µF SW VIN C3 1µF EN TPS61162D PWM Dimming PWM IFB1 COMP IFB2 C4 330nF ISET R1 63.4k GND The EN pin is connected to VIN,; only the PWM signal is used to enable or disable the device. Figure 21. TPS61162D Typical Application - PWM Interface Enabled 20 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 L1 4.7µH 2.7V ~ 6.5V D1 VBAT C1 1µF R2 10 SW VIN C2 1µF C3 1µF EasyScale Command EN TPS61162D Enable / Disable PWM IFB1 COMP IFB2 C4 330nF ISET R1 63.4k GND The PWM pin can be used to enable or disable the device. Figure 22. TPS61162D Typical Application - One-Wire Digital Interface Enabled L1 4.7µH 2.7V ~ 6.5V D1 VBAT C1 1µF R2 10 SW VIN C2 1µF C3 1µF EasyScale Command EN TPS61162D PWM IFB1 COMP IFB2 C4 330nF ISET GND R1 63.4k The PWM pin is connected to VIN; only the EN signal is used to enable or disable the device. Figure 23. TPS61162D Typical Application (One-Wire Digital Interface Enabled ) Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 21 TPS61162D SLVSC13A – JULY 2013 – REVISED MARCH 2016 www.ti.com 10 Power Supply Recommendations The TPS61162D is designed to operate from an input supply range of 2.7 V to 6.5 V. This input supply should be well regulated and be able to provide the peak current required by the LED configuration and inductor selected without voltage drop under load transients (start-up or rapid brightness change). If the input supply is located far from the device, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. 11 Layout 11.1 Layout Guidelines As for all switching power supplies, especially those providing high current and using high switching frequencies, layout is an important design step. If layout is not carefully done, the regulator could show instability as well as EMI problems. Therefore, use wide and short traces for high current paths. The input capacitor, C1 in the Figure 14, must be close to the inductor, as well as the VIN and GND pins, in order to reduce the input ripple detected by the device. If possible, choose a higher capacitance value for C1. If the ripple seen at VIN pin is so great that it affects the boost loop stability or internal circuits operation, TI recommends R2 and C3 to filter and decouple the noise. In this case, C3 must be placed as close to the VIN and GND pins as possible. The SW pin carries high current with fast rising and falling edges. Therefore, the connection between the SW pin to the inductor and Schottky diode must be kept as short and wide as possible. The trace between the Schottky diode and the output capacitor C2 must also be as short and wide as possible. It is beneficial to have the ground of the output capacitor C2 close to the GND pin because there is a large ground return current flowing between them. When laying out signal grounds, TI recommends using short traces separated from power ground traces, and connecting them together at a single point close to the GND pin. 11.2 Layout Example ISET ISET LED2 LED1 IFB2 IFB1 Vias to GND Plane PWM PWM COMP GND 1 PF EN EN Vias to GND Plane VIN SW VIN SW GND 1 PF 4.7 P+ Minimize the area of this trace Figure 24. TPS61162D Layout Example 22 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D TPS61162D www.ti.com SLVSC13A – JULY 2013 – REVISED MARCH 2016 12 Device and Documentation Support 12.1 Device Support 12.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks EasyScale, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TPS61162D 23 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS61162DYFFR NRND DSBGA YFF 9 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 TPS 61162D (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of