TPS65561RGTR

RGT TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER FEATURES APPLICATIONS • • • • • • • • • • • • • Highly Integrated Solution to Reduce Components Integrated Voltage Reference Integrated 50-V Power Switch, Integrated IGBT Driver High Efficiency Programmable Peak Current: 1.1 A to 2.2 A Input Battery Voltage of 1.6 V to 12 V Optimized Control Loop for Fast Charge Time Output Voltage Feedback From Primary Side 16-Pin QFN Package Protection – MAX On Time – MAX Off Time – Overcurrent Shutdown to Monitor VDS at the SW pin (OVDS) – Thermal Monitor Digital Still Cameras Optical Film Cameras DESCRIPTION This device offers a complete solution for charging a photo flash capacitor from a battery input, and subsequently discharging the capacitor to a xenon flash tube. The device has an integrated voltage reference, power switch, IGBT driver, and control logic blocks for capacitor charging applications and driving IGBT applications. Compared with discrete solutions, this device reduces the component count, shrinks the solution size, and eases designs for xenon tube applications. Additional advantages are a fast charging time and high efficiency from an optimized PWM control algorithm. Other provisions of the device includes sensing the output voltage from the primary side, programmable peak current, thermal shutdown, an output pin for charge completion, and input pins for charge enable and flash enable. D1 T1 VCC VCC VA VO C1 SW VBAT VI/F VI/F CHG D Q F1 Controller 0 Vds XFULL or R1 D Q F2 U1 ENA V_FULL D/A Conv VCC ENA or Analog Circuit U0 Max ON U2 I_PEAK LOGIC TSD I_PEAK Ref. Vref SW PGND U3 or VCC F_ON ENA G_IGBT U4 SW1 IGBT NC Figure 1. Typical Application Circuit Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007, Texas Instruments Incorporated TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) TA PACKAGE MARKING PACKAGE (1) PART NUMBER -35°C to 70°C BUO 16-pin QFN TPS65561RGT For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) UNIT VCC -0.6 V to 6 V VBAT -0.6 V to 13 V VSS Supply voltage V(SW) Switch terminal voltage I(SW) Switch current between SW and PGND VI Input voltage of CHG, I_PEAK, F_ON Tstg Storage temperature TJ Maximum junction temperature ESD rating (1) -0.6 V to 50 V 3A -0.3 V to VCC -40°C to 150°C 125°C HBM (Human Body Model) JEDEC JES22-A114 1kV Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT Supply voltage, VCC 2.7 4 V Supply voltage, VBAT 1.6 12 V V(SW) Switch terminal voltage -0.3 45 V I(SW) Switch current between SW and PGND VSS Operating free-air temperature range -35 VIH High-level digital input voltage at CHG and F_ON VIL Low-level digital input voltage at CHG and F_ON 2.5 A 70 °C 2 V 0.5 DISSIPATION RATINGS (1) 2 PACKAGE RθJA (1) POWER RATING TA < 25°C POWER RATING TA = 70°C QFN 47.4 °C/W 2.11 W 1.16 W The thermal resistance, RθJA, is based on a soldered PowerPAD™ on a 2S2P JEDEC board using thermal vias. Submit Documentation Feedback V TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 ELECTRICAL CHARACTERISTICS TA = 25°C, VBAT = 4.2 V, VCC = 3 V, V(SW) = 4.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 1.5 3 UNIT R(ONL) ON resistance of XFULL I(XFULL) = -1 mA V(PKH) (1) Upper threshold voltage of I_PEAK VCC = 3 V V(PKL) (1) Lower threshold voltage of I_PEAK VCC = 3 V ICC1 Supply current from VBAT CHG = H, V(SW) = 0 V (free run by tMAX) ICC2 Supply current from VCC CHG = H, V(SW) = 0 V (free run by tMAX) ICC3 Supply current from VCC and VBAT CHG = L Ilkg1 Leakage current of SW terminal Ilkg2 Leakage current of XFULL terminal I(sink) Sink current at I_PEAK R(ONSW) SW ON resistance between SW and PGND I(SW) = 1 A, VCC = 3 V R(IGBT1) G_IGBT pullup resistance V(G_IGBT) = 0 V, VCC = 3 V R(IGBT2) G_IGBT pulldown resistance V(G_IGBT) = 3 V, VCC = 3 V I(PEAK1) Upper peak of I(SW) V(I_IPEAK) = 3 V I(PEAK2) Lower peak of I(SW) V(I_IPEAK) = 0 V V(FULL) Charge completion detect voltage at V(SW) VBAT = 1.6 V, VCC = 3 V V(ZERO) Zero current detection at V(SW) 1 20 60 mV T(SD) (1) Thermal shutdown temperature 150 160 170 °C Over VDS detection at V(SW) 2.4 V 0.6 V 17 50 µA 1.3 3 mA 1 µA 2 µA 1 µA V(XFULL) = 5 V V(I_PEAK) = 3 V, CHG: High 2 V(I_PEAK) = 3 V, CHG: Low 0.1 VCC = 3 V kΩ µA 0.4 0.9 Ω 8 12 19.4 Ω 36 53 70 Ω 2 2.2 2.4 A 1 1.1 1.2 A 28 28.7 29.4 28.6 29 29.4 V 1.35 1.65 1.95 V t MIN MAX OFF time 25 50 80 µs tMAX MAX ON time 50 100 160 µs R(INPD) Pulldown resistance of CHG, F_ON (1) VCHG = V(F_ON) = 4.2 V 100 kΩ Specified by design. SWITCHING CHARACTERISTICS TA = 25°C, VBAT = 4.2 V, VCC = 3 V, V(SW) = 4.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS F_ON↑↓ - G_IGBT↑↓ tPD (1) (1) Propagation delay MIN TYP MAX UNIT 50 ns SW ON after V(SW) dips from V(ZERO) 500 ns SW OFF after I(SW) exceeds I(PEAK) 270 ns XFULL↓ after V(SW) exceeds V(FULL) 400 ns SW ON after CHG↑ 12 µs SW OFF after CHG↓ 20 ns Specified by design. Submit Documentation Feedback 3 TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 PIN ASSIGNMENT 2 3 F_ON 4 TEST_GND PGND 11 PGND 10 CHG PowerPAD 5 NC SW VCC 16 15 14 13 12 6 7 8 9 XFULL NC 1 I_PEAK G_IGBT SW NC NC VBAT RGT (Top View) NC − No internal connection TERMINAL FUNCTIONS PIN NUMBER SW 3 VCC 4 F_ON 5, 8, 13, 16 I/O DESCRIPTION O Primary side switch. Connect SW to the switched side of the transformer I Power supply input. Connect VCC to an input supply from 2.7 V to 4 V. Bypass VCC to GND with a 1-µF ceramic capacitor as close as possible to the IC. I IGBT gate control input. A logic high on F_ON when CHG is low will drive the gate of the IGBT high to initiate a flash. See the IGBT Driver Control section SubSec1 1 for details. NC No internal connection. I Primary side peak current control input. The voltage at I_PEAK sets the peak current into SW. See the Programming Peak Current section for details on selecting V(I_PEAK). G_IGBT O IGBT gate driver output. G_IGBT swings from PGND to VCC to drive external IGBT devices. 9 XFULL O Charge completion indicator output. XFULL is an open-drain output that pulls low once the output is fully charged. XFULL is high impedance during charging and all fault conditions. XFULL is reset when CHG turns Low from High. See the Indicating Charging Status section for details. 10 CHG I 6 I_PEAK 7 11, 12 4 SIGNAL 1, 2 Charge control input. Drive CHG high to initiate charging of the output. Drive CHG low to terminate charging. PGND Power ground. Connect to the ground plane. 14 TEST_GND Used by TI, should be connected to PGND and ground plane. 15 VBAT I Battery voltage monitor input. Connect VBAT to an input supply from 1.6 V to 12 V. Bypass VBAT to GND with a 10-µF ceramic capacitor (C1 in Figure 1, as close as possible to the battery) and a 1-µF ceramic capacitor (C2 in Figure 1, as close as possible to the IC). There are no power sequencing requirements between VBAT and VCC. Submit Documentation Feedback TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 FUNCTIONAL BLOCK DIAGRAM VCC VBAT CHG SW D Q F1 XFULL 0 Vds D Q F2 U1 ENA V_FULL VCC ENA Max ON U2 U0 TSD I_PEAK Logic I_PEAK Ref. Vref PGND SW U3 VCC F_ON ENA G_IGBT U4 NC Figure 2. Functional Block Diagram I/O Equivalent Circuits CHG, F_ON SW VCC SW CHG, F_ON PGND PGND I_PEAK XFULL VCC XFULL I_PEAK PGND PGND G_IGBT VBAT VCC VBAT G_IGBT PGND PGND Figure 3. I/O Equivalent Circuits Submit Documentation Feedback 5 TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 PRINCIPLES OF OPERATION CHG (VOUT) XFULL F_ON G_IGBT (ENA) TimeA TimeB TimeC TimeD TimeE TimeF TimeH TimeI TimeJ TimeG Figure 4. Whole Operation Sequence Chart Start/Stop Charging TPS65561 has one internal enable latch, F1, that holds the charge enable (ON/OFF status) of the device. See Figure 2. The only way to start charging is to input CHG↑ (see time A/C/H in Figure 4). Each time CHG↑ is applied, the TPS65561 starts charging. There 1. 2. 3. are three trigger events to stop charging: Forced stop by inputting CHG = L from the controller (see timeB in Figure 4). Automatic stop by detecting a full charge. VOUT reaches the target value (see TimeD in Figure 4). Protected stop by detecting an over current function (OVDS) trigger at SW pin (see TimeI in Figure 4). Indicating Charging Status When the charging operation is complete, the TPS65561 drives the charge completion indicator pin, XFULL, to GND. A controller can detect the status of the device as a logic signal when connected through a pullup resister, R1 (see Figure 1). The XFULL output enables the controller to detect the OVDS protection status. If OVDS protection occurs, XFULL never goes L during CHG = H. Therefore, the controller detects OVDS protection by measuring the time from CHG high to XFULL low. If the time to XFULL low is longer than the maximum designed charge time, then an OVDS protection occurred. The device starts charging at timeH, and OVDS protection occurs at TimeI (see Figure 4). At TimeI, XFULL stays high. At TimeJ, the controller detects OVDS protection through the expiration of a timer and then sets CHG to low to terminate the operation. 6 Submit Documentation Feedback TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 CHG SW LOGIC OFF ON OFF XFULL V(SW) V(ZERO) SW OFF ON OFF OFF ON OFF V V(SW) V(BAT) V(FULL) V 0V VA VBAT VOUT 0V VBAT V(SW) VOUT V 0V VA V 0V I(SW) I VOUT VA I(PEAK) 0A I I IOUT I(PEAK)/N(TURN) 0A Time 1 Time 2 T Time 3 Time 5 Time 4 Figure 5. Timing Diagram at One Switching Cycle I(SW) 0A I 0A I(PEAK) IOUT I(PEAK)/N(TURN) I(SW) IOUT T Figure 6. Timing Diagram at Beginning/Ending Control Charging The TPS65561 provides three comparators to control charging. Figure 2 shows the block diagram of TPS65561 and Figure 5 shows a timing diagram of one switch cycle. Note that emphasis is placed on Time1 and Time3 of the waveform in Figure 5. While SW is ON (Time1 to Time2 in Figure 5), U3 monitors current flow through the integrated power switch from SW pin to GND. When I(SW) exceeds I(PEAK), SW turns OFF (Time2 in Figure 5). When SW turns OFF (Time2 in Figure 5), the magnetic energy in the transformer starts discharging. Meanwhile, U2 monitors the kickback voltage at the SW terminal. As the energy is discharging, the kickback voltage is increasing according to the increase of VO (Time2 to Time3 in Figure 5). When almost all energy is discharged, the system cannot continue rectification via the diode, and the charging current of IO goes to zero (Times3 in Figure 5). After rectification stops, the small amount of energy left in the transformer is released via parasitic paths, and the kickback voltage reaches zero (Time3 to Time4 in Figure 5). During this period, U2 makes SW turn ON when (V(SW) - VBAT) dips from V(ZERO) (Time5 in Figure 5). In the actual circuit, the period between Time4 and Time5 in Figure 5 is small or does not appear dependent on the delay time of the U2 detection to SW ON. U1 also monitors the kickback voltage. When (V(SW) - VBAT) exceeds V(FULL), the TPS65561 stops charging (see Figure 6). In Figure 5 and Figure 6, ON time is always the same period in every switch cycle. The ON time is calculated by Equation 1. L and I(PEAK) are selected to ensure that tON does not exceed the MAX ON time (tMAX). I tON = L PEAK VBAT (1) Submit Documentation Feedback 7 TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 The OFF time is dependant on output voltage. As the output voltage gets higher, the OFF time gets shorter (see Equation 2). I tOFF = NTURN x L PEAK VOUT (2) Programming Peak Current The TPS65561 provides a method to program the peak primary current with a voltage applied to the I_PEAK pin. Figure 7 shows how to program I(PEAK). The I_PEAK input is treated as a logic input below V(PKL) (0.6 V) and above V(PKH) (2.4 V). Between V(PKL) and V(PKH), I_PEAK input is treated as an analog input. Using this characteristic, I(PEAK) can be set by a logic signal or by an analog input. Typical usages of this function are: 1. Setting the peak charging currents based on the battery voltage. Larger I(PEAK) for a fully charged battery and lower I(PEAK) for a discharged battery. 2. Reducing I(PEAK) when powering a zooming lens motor. This avoids inadvertent shutdowns due to large current from the battery. In Figure 1, three optional connections to I_PEAK are shown. 1. Use the controller to treat I_PEAK as the logic input pin. This option is the easiest. 2. Use a D/A converter to force I(PEAK) to follow analog information, such as battery voltage. 3. Use an analog circuit to achieve the same results as the D/A converter. Peak of I(SW) I(PEAK1) I(PEAK2) V(PKL) V(PKH) Voltage of I(PEAK) - V Figure 7. I_PEAK vs I(SW) 8 Submit Documentation Feedback TPS65561 www.ti.com SLVS691 – FEBRUARY 2007 IGBT Driver Control The IGBT driver is provided by the TPS65561. The driver voltage depends on VCC. TPS65561 has a mask filter as shown in Figure 8. The mask does not have hysteresis; therefore, there is no wait time from CHG forcing Low after FULL CHARGE to F_ON turning High. CHG XFULL F_ON G_IGBT STANDBY PREACTIVE SW On SW Off etc FULL CHARGE STANDBY Figure 8. IGBT Timing Diagram Protections TPS65561 provides four protection mechanisms: max on time, max off time, thermal disable, and overcurrent shutdown. MAX On Time To prevent a condition such as pulling current from a poor power source (i.e., an almost empty battery), and never reaching peak current, the TPS65561 provides a maximum ON time function. If the ON time exceeds tMAX, the TPS65561 is forced OFF regardless of I(PEAK) detection. MAX Off Time To prevent a condition such as never increasing the voltage at the SW pin when the internal FET is OFF, the TPS65561 provides a maximum OFF time function. If the OFF time exceeds tMIN, the TPS65561 is forced ON regardless of V(ZERO) detection. Thermal Disable Once the TPS65561 die temperature reaches 160°C, all functions stop. Once the die cools below 160°C, the TPS65561 restarts charging if CHG remains high during the entire overtemperature condition. Overcurrent Shutdown to Monitor VDS at the SW Pin (OVDS) The TPS65561 provides an overvoltage monitor function of the SW pin. The TPS65561 is latched off if the voltage on the SW pin is above OVDS during the switch ON time (see Figure 4 and its descriptions). This function protects against a shorted primary winding of the flyback transformer. A short-circuit on the primary winding shorts the battery voltage to GND through the SW pin which could damage the device. Submit Documentation Feedback 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS65561RGTR ACTIVE VQFN RGT 16 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -35 to 85 BUO TPS65561RGTT ACTIVE VQFN RGT 16 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -30 to 85 BUO (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of