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TPS75100, TPS75103, TPS75105
SBVS080J – SEPTEMBER 2006 – REVISED NOVEMBER 2016
TPS7510x Low Dropout, Two-Bank LED Driver With PWM Brightness Control
1 Features
3 Description
•
The TPS7510x linear low dropout (LDO) matching
LED current source is optimized for low-power
keypad and navigation pad LED backlighting
applications. The device provides a constant current
to up to four unmatched LEDs organized in two banks
of two LEDs each in a common-cathode topology.
Without an external resistor, the current source
defaults to a factory-programmable, preset current
level with ±0.5% accuracy (typical). An optional
external resistor can be used to set initial brightness
to user-programmable values with higher accuracy.
Brightness can be varied from off to full brightness by
inputting a pulse width modulation (PWM) signal on
each enable pin (ENx, where x indicates LED bank A
or B). Each bank has independent enable and
brightness control, but current matching is done to all
four channels concurrently. The input supply range is
ideally suited for single-cell Li-Ion battery supplies
and the TPS7510x can provide up to 25 mA per LED.
1
•
•
•
•
•
•
•
•
Regulated Output Current with 2% LED-to-LED
Matching
Drives Up to Four LEDs at 25 mA Each in a
Common Cathode Topology
28-mV Typical Dropout Voltage Extends Usable
Supply Range in Li-Ion Battery Applications
Brightness Control Using PWM Signals
Two 2-LED Banks With Independent Enable and
PWM Brightness Control per Bank
No Internal Switching Signals—Eliminates EMI
Default LED Current Eliminates External
Components
– Default Values from 3 mA to 10 mA (in 1-mA
Increments) Available Using Innovative Factory
EEPROM Programming
– Optional External Resistor can be Used for
High-Accuracy, User-Programmable Current
Over current and Over temperature Protection
Available in Wafer Chip-Scale Package
or 2.50-mm × 2.50-mm WSON-10
2 Applications
•
•
•
•
Keypad and Display Backlighting
White and Color LEDs
Cellular Handsets
PDAs and Smartphones
No internal switching signals are used, eliminating
troublesome electromagnetic interference (EMI). The
TPS7510x is offered in an ultra-small, 9-ball, 0.4-mm
ball-pitch wafer chip-scale package (WCSP) and a
2.50-mm × 2.50-mm, 10-pin WSON package, yielding
a very compact total solution size ideal for mobile
handsets and portable backlighting applications. The
device is fully specified over TJ = –40°C to +85°C.
Device Information(1)
PART NUMBER
TPS7510x
PACKAGE
BODY SIZE (NOM)
WSON (10)
2.50 mm × 2.50 mm
DSBGA (9)
1.208 mm x 1.208 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Diagram
VBATT
TPS7510x
VIN
D1A
VENA
ENA
D2A
VENB
ENB
D1B
D2B
ISET
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS75100, TPS75103, TPS75105
SBVS080J – SEPTEMBER 2006 – REVISED NOVEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 8
7.1
7.2
7.3
7.4
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
8
8
9
9
8
Application and Implementation ........................ 10
8.1 Application Information............................................ 10
8.2 Typical Application .................................................. 12
9 Power Supply Recommendations...................... 14
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 14
11 Device and Documentation Support ................. 15
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
Device Support......................................................
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
15
16
16
16
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (November 2013) to Revision J
Page
•
Added Device Information table, Typical Application Diagram title to front-page diagram, ESD Ratings table,
Thermal Information table, Feature Description section, Device Functional Modes section, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section ............................................................... 1
•
Changed SON to WSON throughout document .................................................................................................................... 1
•
Deleted pin out drawings from Typical Application Diagram figure........................................................................................ 1
•
Changed I/O status to I from O in D1B row of Pin Functions table ....................................................................................... 3
•
Deleted Dissipation Ratings table........................................................................................................................................... 4
Changes from Revision H (January 2010) to Revision I
Page
•
Changed test conditions for ground current parameter in the Electrical Characteristics ....................................................... 5
•
Deleted Figure 14; duplicate mechanical image. ................................................................................................................. 12
Changes from Revision G (March 2009) to Revision H
Page
•
Revised ground current parameter, Electrical Characteristics; changed symbol from IQ to IGND; added specifications
for YFF and DSK packages.................................................................................................................................................... 5
•
Added YFF and DSK package specifications for current matching parameter, Electrical Characteristics ............................ 5
•
Changed diode current accuracy parameter, Electrical Characteristics, to reflect YFF and DSK package specifications.... 5
•
Deleted operating junction temperature range specification from Electrical Characteristics table to eliminate redundancy . 5
2
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SBVS080J – SEPTEMBER 2006 – REVISED NOVEMBER 2016
5 Pin Configuration and Functions
YFF Package
9-Pin DSBGA
Top View
A3
B3
C3
A2
B2
C2
A1
B1
C1
DSK Package
10-Pin WSON
Top View
ENB
1
10
ISET
ENA
2
9
VIN
D1A
3
8
D1B
D2A
4
7
D2B
GND
5
6
NC
GND
(1)
NOTE (1): Not connected
Pin Functions
PIN
NAME
WCSP
WSON
I/O
DESCRIPTION
A3
2
I
Enable pin, Bank A. Driving this pin high turns on the current source to Bank A
outputs. Driving this pin low turns off the current source to Bank A outputs. An
applied PWM signal reduces the LED current (between 0 mA and the maximum
current set by ISET) as a function of the duty cycle of the PWM signal. ENA and
ENB can be tied together. ENA can be left OPEN or connected to GND if not used.
See the Application and Implementation section for more details.
D1A
B3
3
O
Diode source current output, Bank A. Connect to LED anode.
D2A
C3
4
O
Diode source current output, Bank A. Connect to LED anode.
ENA
ENB
A2
1
I
Enable pin, Bank B. Driving this pin high turns on the current source to Bank B
outputs. Driving this pin low turns off the current source to Bank B outputs. An
applied PWM signal reduces the LED current (between 0 mA and the maximum
current set by ISET) as a function of the duty cycle of the PWM signal. ENA and
ENB can be tied together. ENB can be left OPEN or connected to GND if not used.
See the Application and Implementation section for more details.
VIN
B2
9
I
Supply input
GND
C2
5, Pad
—
ISET
A1
10
I
An optional resistor can be connected between this pin and GND to set the
maximum current through the LEDs. If no resistor is connected, ISET defaults to the
internally programmed value.
D1B
B1
8
O
Diode source current output, Bank B. Connect to LED anode.
D2B
C1
7
O
Diode source current output, Bank B. Connect to LED anode.
NC
—
6
—
Not internally connected
Ground
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SBVS080J – SEPTEMBER 2006 – REVISED NOVEMBER 2016
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VIN range
–0.3
7
V
VISET, VENA, VENB, VDX range
–0.3
VIN
IDX for D1A, D2A, D1B, D2B
35
D1A, D2A, D1B, D2B short-circuit duration
V
mA
Indefinite
Continuous total power dissipation
Internally limited
Junction temperature, TJ
–55
150
°C
Storage temperature, Tstg
–55
150
°C
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
PARAMETER
MIN
VIN
Input voltage
IDX
Operating current per LED
tPWM
On-time for PWM signal
TJ
Operating junction temperature range
NOM
MAX
UNIT
2.7
5.5
V
3
25
mA
85
°C
33
µs
–40
6.4 Thermal Information
TPS7510x
THERMAL METRIC (1)
YFF (DSBGA)
DSK (WSON)
9 PINS
10 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
101.6
65.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
1.2
54.0
°C/W
RθJB
Junction-to-board thermal resistance
17.6
39.5
°C/W
ψJT
Junction-to-top characterization parameter
0.6
1.6
°C/W
ψJB
Junction-to-board characterization parameter
17.8
39.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
23.6
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SBVS080J – SEPTEMBER 2006 – REVISED NOVEMBER 2016
6.5 Electrical Characteristics
over operating junction temperature range (TJ = –40°C to +85°C), VIN = 3.8 V, DxA and DxB = 3.3 V, RSET = 32.4 kΩ, and
ENA and ENB = 3.8 V (unless otherwise noted); typical values are at TA = 25°C
PARAMETER
ISHDN
IGND
TEST CONDITIONS
Shutdown supply current
MAX
0.03
1
IDX ≤ 5 mA, VIN = 3.8 V
170
230
IDX > 5 mA, VIN = 3.8 V
250
300
YFF
package
IDX ≤ 5 mA, VIN = 4.5 V
170
200
IDX > 5 mA, VIN = 4.5 V
250
300
2%
4%
Ground current
Current matching
(IDXMAX – IDXMIN / IDXMAX) × 100%
TYP
DSK
package
TA = 25°C
ΔID
MIN
VENA,B = 0 V, VDX = 0 V
TA = –40°C to +85°C
0%
YFF
package
0%
5%
DSK
package
0%
6%
UNIT
µA
µA
ΔIDX%/ΔVIN
Line regulation
3.5 V ≤ VIN ≤ 4.5 V, IDX = 5 mA
2.0
%/V
ΔIDX%/ΔVDX
Load regulation
1.8 V ≤ VDX ≤ 3.5 V, IDX = 5 mA
0.8
%/V
Dropout voltage of any
DX current source
(VDX at IDX = 0.8 × IDX, nom)
IDXnom = 5 mA
28
VDO
IDXnom = 15 mA
70
VISET
Reference voltage for current set
IOPEN
Diode current accuracy (1)
ISET
ISET pin current range
k
ISET to IDX current ratio (1)
VIH
Enable high level input voltage
VIL
Enable low level input voltage
ISET = open,
VDX = VIN – 0.2 V
mV
1.225
1.257
YFF
package
0.5%
3%
DSK
package
0.5%
4%
2.5
62.5
V
µA
420
IINA
Enable pin A (VENA) input current
IINB
Enable pin B (VENB) input current
tSD
Shutdown delay time
TSD
Thermal shutdown temperature
(1)
1.183
100
1.2
V
0.4
VENA = 3.8 V
5.0
VENA = 1.8 V
2.2
VENB = 3.8 V
4.0
VENB = 1.8 V
1.8
Delay from ENA and ENB = low to
reach shutdown current
(IDX = 0.1 × IDX, nom)
5
13
Shutdown, temperature increasing
165
Reset, temperature decreasing
140
6.1
4.9
30
V
µA
µA
µs
°C
Average of all four IDX outputs.
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6.6 Typical Characteristics
over operating junction temperature range (TJ = –40°C to +85°C), VIN = 3.8 V, DxA and DxB = 3.3 V, RSET = 32.4 kΩ, and
ENA and ENB = high (unless otherwise noted); typical values are at TA = 25°C
25
20
IOUT (mA)
3.9V
1V/div
15
VIN
3.6V
10
0.5mA/div
IOUT
5
0
0
10
20
30
40
50
60
70
80
90
20ms/div
100
Duty Cycle (%)
Figure 2. Line Transient (600-mV Pulse)
Figure 1. LED Current vs Duty Cycle (f = 300 Hz)
1.2V
3.6V
3.3V
1V/div
VIN
0.4V
1V/div
0.5mA/div
IOUT
ENA = ENB
20mA/div
IOUT
20ms/div
20ms/div
Figure 4. Dimming Response (Both Channels)
Figure 3. Line Transient (300-mV Pulse)
25
ENA = 3.8V
20
-40°C
0.4V
1V/div
ENB
20mA/div
IOUT (mA)
1.2V
15
+25°C
10
+85°C
IOUT
5
0
20ms/div
0
0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20
VIN - VOUT (V)
Figure 5. Dimming Response (Single Channel)
6
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Figure 6. Output Current vs Headroom Voltage
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SBVS080J – SEPTEMBER 2006 – REVISED NOVEMBER 2016
Typical Characteristics (continued)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Expanded Range
IOUT (mA)
IOUT (mA)
over operating junction temperature range (TJ = –40°C to +85°C), VIN = 3.8 V, DxA and DxB = 3.3 V, RSET = 32.4 kΩ, and
ENA and ENB = high (unless otherwise noted); typical values are at TA = 25°C
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
20 60 100 140 180 220 260 300 340 380 420 460 500
20
30
40
50
RSET (kW)
70
60
80
90
100
RSET (kW)
Figure 7. Output Current vs RSET
Figure 8. Output Current vs RSET
180
5.4
5.3
175
170
IOUT (mA)
IQ (mA)
5.2
+85°C
165
+25°C
-40°C
5.1
5.0
+85°C
4.9
+25°C
4.8
160
4.7
-40°C
4.6
155
2.5
3.0
3.5
4.0
4.5
5.5
5.0
3.4
3.9
4.4
VIN (V)
4.9
5.4
5.9
VIN (V)
Figure 9. Ground Current vs Input Voltage
Figure 10. TPS75105 Output Current vs Input Voltage
RSET = Open
5.4
20
18
5.3
IOUT D1B
IOUT D2B
5.2
16
5.0
IOUT (mA)
IOUT (mA)
14
5.1
IOUT D2A
4.9
IOUT D1A
12
10
8
6
4.8
+85°C
+25°C
-40°C
4
4.7
2
4.6
0
-40
-20
0
20
40
60
80
85
0
0.5
1.0
Temperature (°C)
Figure 11. TPS75105 Output Current vs Temperature
RSET = Open
1.5
2.0
2.5
3.0
3.5
4.0
VOUT (V)
Figure 12. Output Current vs Output Voltage
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7 Detailed Description
7.1 Overview
The TPS7510x linear low dropout (LDO) matching LED current source is optimized for low-power keypad and
navigation pad LED backlighting applications. The device provides a constant current to up to four unmatched
LEDs organized in two banks of two LEDs each in a common-cathode topology. Brightness can be varied from
off to full brightness by inputting a pulse width modulation (PWM) signal on each enable pin (ENx, where x
indicates LED bank A or B). Each bank has independent enable and brightness control, but current matching is
done to all four channels concurrently. The input supply range is ideally suited for single-cell Li-Ion battery
supplies and the TPS7510x can provide up to 25 mA per LED.
7.2 Functional Block Diagram
Controlled Current Source
D1A
Control
Logic
ENA
800kW
Controlled Current Source
Controlled Current Source
D2A
D1B
ENB
Control
Logic
1MW
VIN
ISET
D2B
Controlled Current Source
Int/Ext
Set Current
Sense
Current
Reference
GND
8
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7.3 Feature Description
7.3.1 Load Regulation
The TPS7510x is designed to provide very tight load regulation. In the case of a fixed current source, the output
load change is a change in voltage. Tight load regulation means that output voltages (LED forward voltages) with
large variations can be used without impacting the fixed current being sourced by the output or the output-tooutput current matching. The permissible variation on the output not only allows for large variations in white LED
forward voltages, but even permits the use of different color LEDs on different outputs with minimal effect on
output current.
7.3.2 Line Regulation
The TPS7510x is also designed to provide very tight line regulation. This architecture allows for voltage transient
events to occur on the power supply (battery) without effecting the fixed output current levels or the output-tooutput current matching. A prime example of such a supply transient event is the occurrence of a transmit pulse
on the radio of a mobile handset. These transient pulses can cause variations of 300 mV and 600 mV on the
supply to the TPS7510x. The line regulation limitation is that the lower supply voltage level of the event does not
cause the input-to-output voltage difference to drop below the dropout voltage range.
7.4 Device Functional Modes
7.4.1 LED ON
Apply 1.2 V or more to ENx to turn the LED bank on.
7.4.2 LED OFF
Apply a voltage less than or equal to 0.4V to ENx to turn the LED bank off.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS7510x provides a constant current to up to four unmatched LEDs organized in two banks of two LEDs
each in a common-cathode topology. Without an external resistor, the current source defaults to a factoryprogrammable, preset current level with ±0.5% accuracy (typical). An optional external resistor can be used to
set initial brightness to user-programmable values with higher accuracy. Brightness can be varied from off to full
brightness by inputting a pulse width modulation (PWM) signal on each enable pin (ENx, where x indicates LED
bank A or B). Each bank has independent enable and brightness control, but current matching is done to all four
channels concurrently. The input supply range is ideally suited for single-cell Li-Ion battery supplies and the
TPS7510x can provide up to 25 mA per LED. No internal switching signals are used, eliminating troublesome
electromagnetic interference (EMI). The device is fully specified over TJ = –40°C to +85°C.
8.1.1 Setting the Output Current Level
The TPS7510x is a quad matched current source. Each of the four current source output levels is set by a single
reference current. An internal voltage reference of 1.225 V (nominal) in combination with a resistor sets the
reference current level. This reference current is then mirrored onto each of the four outputs with a ratio of
typically 420:1. The resistor required to set the LED current is calculated using Equation 1:
RISET =
K ´ VISET
ILED
where:
•
•
•
K is the current ratio
VISET is the internal reference voltage
ILED is the desired LED current
(1)
For example, to set the LED current level to 10mA, a resistor value of 51.1 kΩ is required. This value sets up a
reference current of 23.9 μA (1.22 V / 51.1 kΩ). In turn, this reference current is mirrored to each output current
source, resulting in an output current of 10 mA (23.9 μA × 420).
The TPS7510x offers two methods for setting the output current levels. The LED current is set either by
connecting a resistor (calculated using Equation 1) from the ISET pin to GND, or leaving ISET unconnected to
employ the factory-programmed RSET resistance. The internal programmed resistance is implemented using
high-precision processing and yields a reference current accuracy of 0.5%, nominal. Accuracy using external
resistors is subject to the tolerance of the external resistor and the accuracy of the internal reference voltage.
The TPS7510x automatically detects the presence of an external resistor by monitoring the current out of the ISET
pin. Current levels in excess of 3 μA signify the presence of an external resistor and the device uses the external
resistor to set the reference current. If the current from ISET is less than 3 μA, the device defaults to the preset
internal reference set resistor. The TPS7510x is available with eight preset current levels, from 3 mA to 10 mA
(per output) in 1-mA increments. Solutions using the preset internal current level eliminate an external
component, thereby increasing accuracy and reducing cost.
10
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Application Information (continued)
Table 1. Recommended (1% Tolerance) Set Resistor Values
(1)
RSET (kΩ)
ISET (μA)
IDX (mA) (1)
511
2.4
1.0
255
4.8
2.0
169
7.2
3.0
127
9.6
4.1
102
12.0
5.0
84.5
14.5
6.1
73.2
16.7
7.0
64.9
18.9
7.9
56.2
21.8
9.2
51.1
24.0
10.1
46.4
26.4
11.1
42.2
29.0
12.2
39.2
31.3
13.1
36.5
33.6
14.1
34.0
36.0
15.1
32.4
37.8
15.9
30.1
40.7
17.1
28.7
42.7
17.9
26.7
45.9
19.3
25.5
48.0
20.2
24.3
50.4
21.2
23.2
52.8
22.2
22.1
55.4
23.3
21.5
57.0
23.9
20.5
59.8
25.1
IDX = (VSET / RSET) × k.
8.1.2 Limitations on LED Forward Voltages
The TPS7510x is a linear current source implementing LDO regulator building blocks. Therefore, to maintain
accurate operation, there are some limitations to the forward (output) voltages that can be used. The first
limitation is the maximum LED forward voltage. The dropout voltage must be considered because LDO
technology is employed. The TPS7510x is an ultra-low dropout device with typical dropouts in the range of 30
mV at 5 mA. Care must be taken in the design to ensure that the difference between the lowest possible input
voltage (for example, battery cut-off) and the highest possible forward voltage yields at least 100 mV of
headroom. Headroom levels less than dropout decrease the accuracy of the current source (see Figure 6).
The other limitation to consider is the minimum output voltage required to yield accurate operation. The current
source employs NMOS MOSFETs, and a minimum forward LED voltage of approximately 1.5 V on the output is
required to maintain highest accuracy. The TPS7510x is ideal for white LEDs and color LEDs with forward
voltages greater than 1.5 V. This range includes red LEDs that have typical forward voltages of 1.7 V.
8.1.3 Use of External Capacitors
The TPS7510x does not require the use of any external capacitors for stable operation. Nominal stray and
power-supply decoupling capacitance on the input is adequate for stable operation. Capacitors are not needed
for stability and are therefore not recommended on the outputs.
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8.1.4 Use of Unused Outputs or Tying Outputs Together
Unused outputs can be left unconnected or tied to the VIN supply. Although open outputs are acceptable, tying
unused outputs to the VIN supply increases ESD protection. Connecting unused outputs to ground violates the
minimum recommended output voltage, results in current levels that potentially exceed the set or preset LED
current, and must be avoided.
Connecting outputs in parallel is an acceptable way of increasing the amount of LED current drive. This
configuration is a useful trick when the higher current level is a multiple of the preset value.
8.1.5 Use of Enable Pins for PWM Dimming
The TPS7510x divides control of the LED outputs into two banks of two current sources each. Each bank is
controlled by the use of an independent, active-high enable pin (ENA and ENB). The enable pin can be used for
standard ON or OFF operation of the current source, driven by standard logic levels from processor GPIO pins,
for example. Drive ENx high to turn on the bank of LEDs; drive ENx low to turn off the bank of LEDs.
Another use of the enable pins is for LED dimming. LED brightness is a function of the current level being driven
across the diode and the time that current is being driven through the diode. The perceived brightness of an LED
can be changed by either varying the current level or, more effectively, by changing the time in which that current
is present. When a PWM signal is input into the enable pin, the duty cycle (high- or on-time) determines how
long the fixed current is driven across the LEDs. Reducing or increasing that duration has the effect of dimming
or brightening the LED, without having to employ the more complex method of varying the current level. This
technique is particularly useful for reducing LED brightness in low ambient light conditions, where LED brightness
is not required, thereby decreasing current consumption. The enable pins can also be used for LED blinking,
varying blink rates based on system status.
Although providing many useful applications, PWM dimming does have a minimum duty cycle required to
achieve the required current level. The recommended minimum on-time of the TPS7510x is approximately 33 μs.
On-times less than 33 μs result in reductions in the output current by not allowing enough time for the output to
reach the desired current level. Also, having both enables switching together, asynchronously, or having one
enable on at all times, effects the minimum recommended on-time (see Figure 4 and Figure 5). If one enable is
already on, the speed at which the other channel turns on is faster than if both channels are turning on together
or if the other channel is off. Therefore, already having one channel enabled allows for approximately 10-μs to
12-μs shorter minimum on-times for the switching channel.
Unused enable pins can be left unconnected or connected to ground to minimize current consumption.
Connecting unused enable pins to ground increases ESD protection. If connected to VIN, a small amount of
current drains through the enable input (see the Electrical Characteristics table).
8.2 Typical Application
TPS7510x
Dimming PWM
or CPU GPIO
ENA
D1A
ENB
D2A
D1B
VIN
Li-Ion
Battery
D2B
ISET
GND
RSET
(optional)
Figure 13. Typical Application Diagram
12
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Typical Application (continued)
8.2.1 Design Requirements
Table 2 shows the design requirements.
Table 2. Design Parameters
PARAMETER
DESIGN REQUIREMENT
Input voltage
3.8 V
Number of LEDs
4
LED current
5 mA (per LED)
8.2.2 Detailed Design Procedure
Select the TPS75105 so that no external resistor is required to set the LED current.
8.2.3 Application Curve
5.4
5.3
IOUT (mA)
IOUT D1B
IOUT D2B
5.2
5.1
5.0
IOUT D2A
4.9
IOUT D1A
4.8
4.7
4.6
-40
-20
0
20
40
60
80
85
Temperature (°C)
RSET = open
Figure 14. TPS75105 Output Current vs Temperature
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9 Power Supply Recommendations
The TPS7510x is designed to operate with an input voltage between 2.7 V to 5.5 V.
10 Layout
10.1 Layout Guidelines
Figure 15 demonstrates an example layout for the WSON package.
10.2 Layout Example
RSET
ENB
ENA
VIN
GND P LANE
Figure 15. Layout Example for the WSON (DSK) Package
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SBVS080J – SEPTEMBER 2006 – REVISED NOVEMBER 2016
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
Two evaluation modules (EVMs) are available to assist in the initial circuit performance evaluation using the
TPS7510x. The TPS75105EVM-174 and TPS75105DSKEVM-529 evaluation modules (and related user guides)
can be requested at the Texas Instruments website through the product folders or purchased directly from the TI
eStore.
11.1.2 Device Nomenclature
OPTIONS (1) (2)
PRODUCT ID
X is the nominal default diode output current (for example, 3 = 3 mA, 5 = 5 mA, and 0 = 10 mA).
YYY is the package designator.
Z is the reel quantity (R = 3000, T = 250).
TPS7510x yyyz
(1)
(2)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Default set currents from 3 mA to 10 mA in 1-mA increments are available through the use of innovative factory EEPROM programming.
Minimum order quantities may apply. Contact factory for details and availability.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
• TPS75105EVM-174 Evaluation Module (SLVU182)
• TPS75105DSKEVM-529 Evaluation Module (SLVU334)
11.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPS75100
Click here
Click here
Click here
Click here
Click here
TPS75103
Click here
Click here
Click here
Click here
Click here
TPS75105
Click here
Click here
Click here
Click here
Click here
11.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.5 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
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11.6 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.7 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS75100DSKR
ACTIVE
SON
DSK
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
SKX
TPS75100DSKT
ACTIVE
SON
DSK
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
SKX
TPS75100YFFR
ACTIVE
DSBGA
YFF
9
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
FB
TPS75100YFFT
ACTIVE
DSBGA
YFF
9
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
FB
TPS75103YFFR
ACTIVE
DSBGA
YFF
9
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
FC
TPS75103YFFT
ACTIVE
DSBGA
YFF
9
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
FC
TPS75105DSKR
ACTIVE
SON
DSK
10
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CHH
TPS75105DSKT
ACTIVE
SON
DSK
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
CHH
TPS75105YFFR
ACTIVE
DSBGA
YFF
9
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
FE
TPS75105YFFT
ACTIVE
DSBGA
YFF
9
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
FE
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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