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TPS7A4701-EP
SLVSDQ3 – FEBRUARY 2017
TPS7A4701-EP 36-V, 1-A, 4-µVRMS, RF LDO Voltage Regulator
1 Features
2 Applications
•
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1
•
•
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•
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Input Voltage Range: 3 V to 36 V
Output Voltage Noise:
4 µVRMS (10 Hz, 100 kHz)
Power-Supply Ripple Rejection:
– 82 dB (100 Hz)
– ≥ 55 dB (10 Hz, 10 MHz)
Two Output Voltage Modes:
– ANY-OUT™ Version (User-Programmable
Output via PCB Layout):
– No External Feedback Resistors or FeedForward Capacitors Required
– Output Voltage Range: 1.4 V to 20.5 V
– Adjustable Version:
– Output Voltage Range: 1.4 V to 34 V
Output Current: 1 A
Dropout Voltage: 307 mV at 1 A
CMOS Logic Level-Compatible Enable Pin
Built-In Fixed Current Limit and
Thermal Shutdown
Available in High-Performance Thermal Package:
5-mm × 5-mm QFN
Operating Temperature Range:
–55°C to 125°C
Supports Defense, Aerospace, and Medical
Applications:
– Controlled Baseline
– One Assembly/Test Site
– One Fabrication Site
– Available in Extended (–55°C to 125°C)
Temperature Range
– Extended Product Life Cycle
– Extended Product-Change Notification
– Product Traceability
•
•
•
Voltage-Controlled Oscillators (VCO)
Frequency Synthesizers
Test and Measurement
Instrumentation, Medical, and Audio
RX, TX, and PA Circuitry
Supply Rails for Operational Amplifiers,
DACs, ADCs, and Other High-Precision Analog
Circuitry
Post DC-DC Converter Regulation and
Ripple Filtering
Base Stations and Telecom Infrastructure
12-V and 24-V Industrial Buses
3 Description
The TPS7A4701-EP is a positive voltage (36 V),
ultra-low-noise (4 µVRMS) low-dropout linear
regulators (LDO) capable of sourcing a 1-A load.
The TPS7A4701-EP output voltage can be configured
with a user-programmable PCB layout (up to 20.5 V),
or adjustable (up to 34 V) with external feedback
resistors.
The TPS7A4701-EP is designed with bipolar
technology primarily for high-accuracy, high-precision
instrumentation applications where clean voltage rails
are critical to maximize system performance. This
feature makes the device ideal for powering
operational amplifiers, analog-to-digital converters
(ADCs), digital-to-analog converters (DACs), and
other high-performance analog circuitry in critical
applications such as medical, radio frequency (RF),
and test-and-measurement.
In addition, the TPS7A4701-EP is ideal for post DCDC converter regulation. By filtering out the output
voltage ripple inherent to DC-DC switching
conversions, maximum system performance is
ensured in sensitive instrumentation, test-andmeasurement, audio, and RF applications.
Simplified Schematic
Device Information(1)
PART NUMBER
TPS7A4701-EP
RF LDO
TPS7A4701-EP
PACKAGE
VQFN (20)
BODY SIZE (NOM)
5.00 mm × 5.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Amplifier
TPS7A33
Negative-Voltage
Regulator
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS7A4701-EP
SLVSDQ3 – FEBRUARY 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
5
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
8
8.1 Application Information............................................ 15
8.2 Typical Application .................................................. 15
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
Programming...........................................................
Power Supply Recommendations...................... 19
9.1 Power Dissipation (PD)............................................ 19
10 Layout................................................................... 20
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Protection................................................
Estimating Junction Temperature .........................
20
20
21
21
11 Device and Documentation Support ................. 22
11.1
11.2
11.3
11.4
11.5
11.6
Detailed Description ............................................ 11
7.1
7.2
7.3
7.4
7.5
Application and Implementation ........................ 15
11
11
11
12
12
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
12 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
2
DATE
REVISION
NOTES
February 2017
*
Initial release.
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5 Pin Configuration and Functions
OUT
NC
NC
NC
IN
20
19
18
17
16
RGW Package
20-Pin VQFN
Top View
OUT
1
15
IN
NC
2
14
NR
SENSE/FB
3
13
EN
Thermal
Pad
9
10
0P4V
0P2V
0P8V
11
8
5
1P6V
6P4V1
7
0P1V
GND
12
6
4
3P2V
6P4V2
Not to scale
Pin Functions
PIN
I/O
NAME
NO.
0P1V
12
I
0P2V
11
I
0P4V
10
I
0P8V
9
I
1P6V
8
I
3P2V
6
I
6P4V1
5
I
6P4V2
4
I
EN
13
I
GND
7
—
IN
15, 16
I
NC
2, 17-19
—
DESCRIPTION
When connected to GND, this pin adds 0.1 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
When connected to GND, this pin adds 0.2 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
When connected to GND, this pin adds 0.4 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
When connected to GND, this pin adds 0.8 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
When connected to GND, this pin adds 1.6 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
When connected to GND, this pin adds 3.2 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
When connected to GND, this pin adds 6.4 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
When connected to GND, this pin adds 6.4 V to the nominal output voltage of the regulator.
Do not connect any voltage other than GND to this pin. If not used, leave this pin floating.
Enable pin. The device is enabled when the voltage on this pin exceeds the maximum enable
voltage, VEN(HI). If enable is not required, tie EN to IN.
Ground.
Input supply. A capacitor greater than or equal to 1 µF must be tied from this pin to ground to
assure stability.
A 10-µF capacitor is recommended to be connected from IN to GND (as close to the device as
possible) to reduce circuit sensitivity to printed circuit board (PCB) layout, especially when long
input traces or high source impedances are encountered.
This pin can be left open or tied to any voltage between GND and IN.
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Pin Functions (continued)
PIN
I/O
DESCRIPTION
14
—
Noise reduction pin. When a capacitor is connected from this pin to GND, RMS noise can be
reduced to very low levels. A capacitor greater than or equal to 10 nF must be tied from this pin
to ground to assure stability. A 1-µF capacitor is recommended to be connected from NR to
GND (as close to the device as possible) to maximize ac performance and minimize noise.
1, 20
O
Regulator output. A capacitor greater than or equal to 10 µF must be tied from this pin to
ground to assure stability. A 47-µF ceramic output capacitor is highly recommended to be
connected from OUT to GND (as close to the device as possible) to maximize ac performance.
NAME
NO.
NR
OUT
Control-loop error amplifier input.
SENSE/FB
3
I
This is the SENSE pin if the device output voltage is programmed using ANY-OUT (no external
feedback resistors). This pin must be connected to OUT. Connect this pin to the point of load to
maximize accuracy.
This is the FB pin if the device output voltage is set using external resistors. See the Adjustable
Operation section for more details.
SENSE
3
Thermal Pad
I
—
This is the SENSE pin of the device and must be connected to OUT. Connect this pin to the
point of load to maximize accuracy.
Connect the thermal pad to a large-area ground plane. The thermal pad is internally connected
to GND.
6 Specifications
6.1 Absolute Maximum Ratings
Over junction temperature range, unless otherwise noted (1)
Voltage (2)
Current
MIN
MAX
UNIT
IN pin to GND pin
–0.4
36
V
EN pin to GND pin
–0.4
36
V
EN pin to IN pin
–36
0.4
V
OUT pin to GND pin
–0.4
36
V
NR pin to GND pin
–0.4
36
V
SENSE/FB pin to GND pin
–0.4
36
V
0P1V pin to GND pin
–0.4
36
V
0P2V pin to GND pin
–0.4
36
V
0P4V pin to GND pin
–0.4
36
V
0P8V pin to GND pin
–0.4
36
V
1P6V pin to GND pin
–0.4
36
V
3P2V pin to GND pin
–0.4
36
V
6P4V1 pin to GND pin
–0.4
36
V
6P4V2 pin to GND pin
–0.4
36
V
Peak output
Internally limited
TJ
Operating virtual junction
–55
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
4
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to network ground terminal.
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6.2 ESD Ratings
MIN
V(ESD)
(1)
(2)
Electrostatic discharge
MAX UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
–2500 2500
Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
–500
V
500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over junction temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VI
3.0
35
V
VO
1.4
34
V
VEN
0
VIN
V
IO
0
1
A
6.4 Thermal Information
TPS7A4701-EP
THERMAL METRIC
(1)
RGW
UNIT
20 PINS
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
RθJB
Junction-to-board thermal resistance
ψJT
Junction-to-top characterization parameter
0.3
°C/W
ψJB
Junction-to-board characterization parameter
11.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.7
°C/W
(1)
32.5
°C/W
27
°C/W
11.9
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
At –55°C ≤ TJ ≤ 125°C; VI = VO(nom) + 1 V or VI = 3 V (whichever is greater); VEN = VI; IO = 0 mA; CIN = 10 µF; COUT = 10 µF;
CNR = 10 nF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins OPEN, unless
otherwise noted.
PARAMETER
VI
TEST CONDITIONS
Input voltage range
VUVLO
Under-voltage lockout threshold
V(REF)
Reference voltage
VUVLO(HYS)
Under-voltage lockout hysteresis
VNR
Noise reduction pin voltage
Output voltage range
MIN
TYP
3
35
VI rising
2.67
VI falling
2.5
V(REF) = V(FB)
V
V
1.4
V
mV
VOUT
Using adjustable option
1.4
VO
UNIT
177
Using ANY-OUT option
VI ≥ VO(nom) + 1 V or 3 V
(whichever is greater),
COUT = 20 µF
MAX
V
Using ANYOUT option
1.4
20.5
Using
adjustable
option
1.4
34
–1
1
–3.5
3.5
V
Nominal accuracy
TJ = 25°C, COUT = 20 µF
Overall accuracy
VO(nom) + 1 V ≤ VI ≤ 35 V,
0 mA ≤ IO ≤ 1 A, COUT = 20 µF
ΔVO(ΔVI)
Line regulation
VO(nom) + 1 V ≤ VI ≤ 35 V
0.092
%VO
ΔVO(ΔIO)
Load regulation
0 mA ≤ IO ≤ 1 A
0.3
%VO
VI = 95% VO(nom), IO = 0.5 A
216
VI = 95% VO(nom), IO = 1 A
307
V(DO)
Dropout voltage
I(CL)
Current limit
VO = 90% VO(nom)
1
IO = 0 mA
450
1.26
0.58
Ground pin current
I(EN)
Enable pin current
I(SHDN)
Shutdown supply current
V+EN(HI)
Enable high-level voltage
2
VI
V+EN(LO)
Enable low-level voltage
0
0.4
I(FB)
Feedback pin current
PSRR
Power-supply rejection ratio
Vn
Output noise voltage
Thermal shutdown temperature
TJ
Operating junction temperature
6
mV
A
1
I(GND)
Tsd
%VO
IO = 1 A
6.1
VEN = VI
0.78
2
VI = VEN = 35 V
0.81
2
VEN = 0.4 V
2.55
8
VEN = 0.4 V, VI = 35 V
3.04
60
mA
µA
µA
V
V
350
nA
VI = 16 V, VO(nom) = 15 V, COUT = 50 µF,
IO = 500 mA, CNR = 1 µF, f = 1 kHz
78
dB
VI = 3 V, VO(nom) = 1.4 V, COUT = 50 µF,
CNR = 1 µF, BW = 10 Hz to 100 kHz
4.17
VIN = 6 V, VO(nom) = 5 V, COUT = 50 µF,
CNR = 1 µF, BW = 10 Hz to 100 kHz
4.67
Shutdown, temperature increasing
170
Reset, temperature decreasing
150
µVRMS
–55
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°C
125
°C
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6.6 Typical Characteristics
At –55°C ≤ TJ ≤ 125°C; VI = VO(nom) + 1 V or VI = 3 V (whichever is greater); VEN = VI; IO = 0 mA; CIN = 10 µF; COUT = 10 µF;
CNR = 1 µF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins OPEN, unless
otherwise noted.
400%
100
VOUT = 1.4 V,V NOISE = 4.17 mVRMS
VOUT = 5 V,V NOISE = 4.67 mVRMS
VOUT = 10 V, V NOISE = 7.25 mVRMS
VOUT = 15 V, V NOISE = 12.28 mVRMS
200%
VOUT(NOM)
Noise (mV
Hz)
10
± ƒ&
± ƒ&
± ƒ&
0°C
300%
1
0.1
25°C
85°C
105°C
125°C
100%
0
-100%
-200%
-300%
0.01
10
100
1k
10k
Frequency (Hz)
100k
1M
-400%
0
G020
IOUT = 500 mA
COUT = 50 µF
BWRMSNOISE (10 Hz, 100 kHz)
5
10
CNR = 1 µF
15
20
25
Input Voltage (V)
30
35
40
D002
Figure 2. Line Regulation
Figure 1. Noise vs Output Voltage
400%
3
± ƒ&
± ƒ&
± ƒ&
0°C
300%
200%
25°C
85°C
105°C
125°C
UVLO Off
UVLO On
2.9
2.8
VIN (V)
VOUT(NOM)
2.7
100%
0
2.6
2.5
2.4
-100%
2.3
-200%
2.2
-300%
2.1
-400%
0
100
200
300
400 500 600 700
Output Current (mA)
800
2
-60
900 1000
-20
0
20
40
60
Temperature (°C)
80
100
120
140
D004
Figure 4. UVLO Threshold vs Temperature
800
±
±
±
750
ƒ&
ƒ&
ƒ&
0°C
25°C
85°C
105°C
125°C
700
IQ (µA)
VEN (V)
Figure 3. Load Regulation
1.65
1.6
1.55
1.5
1.45
1.4
1.35
1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
-60
-40
D003
650
600
550
500
450
-40
-20
0
20
40
60
Temperature (°C)
80
100
120
140
0
5
D005
10
15
20
25
Input Voltage (V)
30
35
40
D006
IOUT = 0 µA
Figure 5. Enable Voltage Threshold vs Temperature
Figure 6. Quiescent Current vs Input Voltage
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Typical Characteristics (continued)
At –55°C ≤ TJ ≤ 125°C; VI = VO(nom) + 1 V or VI = 3 V (whichever is greater); VEN = VI; IO = 0 mA; CIN = 10 µF; COUT = 10 µF;
CNR = 1 µF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins OPEN, unless
otherwise noted.
2
10
±
±
±
9
0°C
25°C
85°C
105°C
125°C
± ƒ&
± ƒ&
± ƒ&
0°C
1.8
1.6
7
1.4
6
1.2
IEN (µA)
IGND (mA)
8
ƒ&
ƒ&
ƒ&
5
4
1
0.8
3
0.6
2
0.4
1
0.2
0
0
0
100
200
300
400 500 600 700
Output Current (mA)
800
0
900 1000
5
10
15
20
25
Inout Voltage (V)
D007
Figure 7. Ground Current vs Output Current
30
35
40
D008
Figure 8. Enable Current vs Input Voltage
10
3
± ƒ&
± ƒ&
± ƒ&
0°C
9
8
25°C
85°C
105°C
125°C
± ƒ&
± ƒ&
± ƒ&
0°C
2.5
7
25°C
85°C
105°C
125°C
2
6
ICL (A)
ISHDN (µA)
25°C
85°C
105°C
125°C
5
1.5
4
1
3
2
0.5
1
0
0
0
5
10
15
20
25
Input Voltage (V)
30
35
40
2
4
6
8
D009
10
12
14
Input Voltage (V)
16
18
20
D010
VOUT = 90% VOUT(NOM)
Figure 10. Current Limit vs Input Voltage
100
90
90
80
80
70
70
PSRR (dB)
PSRR (dB)
Figure 9. Shutdown Current vs Input Voltage
100
60
50
40
30
10
0
10
100
IOUT = 1 A
VOUT = 1.4 V
1k
10k
100k
Frequency (Hz)
COUT = 50 µF
1M
40
CNR = 0.01 mF
CNR = 0.1 mF
CNR = 1 mF
CNR = 2.2 mF
20
10
10M
0
10
100
G011
VIN = 3 V
Figure 11. Power-Supply Rejection Ratio vs CNR
8
50
30
CNR = 0.01 mF
CNR = 0.1 mF
CNR = 1 mF
CNR = 2.2 mF
20
60
IOUT = 0.5 A
VOUT = 1.4 V
1k
10k
100k
Frequency (Hz)
COUT = 50 µF
1M
10M
G012
VIN = 3 V
Figure 12. Power-Supply Rejection Ratio vs CNR
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Typical Characteristics (continued)
100
100
90
90
80
80
70
70
PSRR (dB)
PSRR (dB)
At –55°C ≤ TJ ≤ 125°C; VI = VO(nom) + 1 V or VI = 3 V (whichever is greater); VEN = VI; IO = 0 mA; CIN = 10 µF; COUT = 10 µF;
CNR = 1 µF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins OPEN, unless
otherwise noted.
60
50
40
30
10
0
10
100
1k
CNR = 1 µF
VOUT = 1.4 V
10k
100k
Frequency (Hz)
1M
VDO = 200 mV
VDO = 300 mV
10
0
10M
VIN = 3 V
70
50
40
20
10
10
CNR = 1 µF
0
10M
COUT = 50 µF
90
80
80
70
70
PSRR (dB)
PSRR (dB)
100
60
50
40
VOUT = 1.4 V
VOUT = 3.3 V
VOUT = 5 V
VOUT = 10 V
VOUT = 15 V
0
10
100
CNR = 1 µF
1k
10M
Figure 17. Power-Supply Rejection Ratio vs Output Voltage
10M
G016
COUT = 50 µF
VOUT = 1.4 V
VOUT = 3.3 V
VOUT = 5 V
VOUT = 10 V
VOUT = 15 V
0
10
100
G017
IOUT = 500 mA
CNR = 1 µF
1M
40
10
1M
10k
100k
Frequency (Hz)
50
20
COUT = 50 µF
1k
60
30
10k
100k
Frequency (Hz)
VDO = 500 mV
VDO = 1 V
Figure 16. Power-Supply Rejection Ratio vs Dropout
90
10
100
VOUT = 3.3 V
IOUT = 1 A
100
20
10
G015
Figure 15. Power-Supply Rejection Ratio vs Dropout
30
G014
COUT = 50 µF
40
30
VOUT = 3.3 V
IOUT = 500 mA
10M
50
20
1M
CNR = 1 µF
1M
60
30
10k
100k
Frequency (Hz)
10k
100k
Frequency (Hz)
VDO = 200 mV
VDO = 300 mV
90
PSRR (dB)
PSRR (dB)
VDO = 500 mV
VDO = 1 V
60
1k
1k
Figure 14. Power-Supply Rejection Ratio vs Dropout
80
100
100
100
70
10
10
VOUT = 3.3 V
IOUT = 50 mA
80
0
VDO = 200 mV
VDO = 300 mV
VDO = 500 mV
VDO = 1 V
20
Figure 13. Power-Supply Rejection Ratio vs IO
90
40
G013
COUT = 50 µF
100
50
30
IOUT = 0 mA
IOUT = 50 mA
IOUT = 500 mA
IOUT = 1000 mA
20
60
CNR = 1 µF
1k
10k
100k
Frequency (Hz)
COUT = 50 µF
1M
10M
G018
IOUT = 1000 mA
Figure 18. Power-Supply Rejection Ratio vs Output Voltage
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Typical Characteristics (continued)
At –55°C ≤ TJ ≤ 125°C; VI = VO(nom) + 1 V or VI = 3 V (whichever is greater); VEN = VI; IO = 0 mA; CIN = 10 µF; COUT = 10 µF;
CNR = 1 µF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins OPEN, unless
otherwise noted.
IOUT
(1 A/div)
VIN
(10 V/div)
VOUT
(10 mV/div)
VOUT
(10 mV/div)
Time (500 ms/div)
VIN = 5 V
VOUT = 3.3 V
Time (5 ms/div)
G060
IOUT = 10 mA to 845 mA
VIN = 5 V to 15 V
Figure 19. Load Transient
G061
VOUT = 3.3 V
IOUT = 845 mA
Figure 20. Line Transient
100
IOUT = 50 mA, VNOISE = 5 mVRMS
IOUT = 20 mA, VNOISE = 5.9 mVRMS
VEN
(2 V/div)
Hz)
10
Noise (mV
VOUT
(2 V/div)
IOUT
(200 mA/div)
1
0.1
0.01
Time (50 ms/div)
Startup Time = 65 ms
IOUT = 500 mA
VIN = 6 V
CIN = 10 µF
10
G062
VOUT = 5 V
COUT = 50 µF
1k
10k
Frequency (Hz)
100k
VOUT = 4.7 V
COUT = 10 µF
BWRMSNOISE (10 Hz, 100 kHz)
Figure 21. Startup
10
100
1M
G019
CNR = 1 µF
Figure 22. Noise vs Output Current
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7 Detailed Description
7.1 Overview
The TPS7A4701-EP is a positive voltage (36 V), ultra-low-noise (4 µVRMS) LDOs capable of sourcing a 1-A load.
The TPS7A4701-EP is designed with bipolar technology primarily for high-accuracy, high-precision
instrumentation applications where clean voltage rails are critical to maximize system performance. This feature
makes the device ideal for powering operational amplifiers, analog-to-digital converters (ADCs), digital-to-analog
converters (DACs), and other high-performance analog circuitry.
7.2 Functional Block Diagram
IN
OUT
Thermal
Shutdown
UVLO
IN
OUT
CIN
COUT
Current
Limit
100 kW
Band
Gap
265.5 kW
SENSE/FB
3.2 MW
0P1V
1.6 MW
1.572 MW
0P2V
800 kW
Fast
Charge
0P4V
Enable
EN
400 kW
50 kW
50 kW
100 kW
200 kW
0P8V
1P6V 3P2V 6P4V 6P4V
NR
CNR
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7.3 Feature Description
7.3.1 Internal Current Limit (ICL)
The internal current limit circuit is used to protect the LDO against high-load current faults or shorting events. The
LDO is not designed to operate at a steady-state current limit. During a current-limit event, the LDO sources
constant current. Therefore, the output voltage falls while load impedance decreases. Note also that when a
current limit occurs while the resulting output voltage is low, excessive power is dissipated across the LDO,
which results in a thermal shutdown of the output.
7.3.2 Enable (EN) And Under-Voltage Lockout (UVLO)
The TPS7A4701-EP only turns on when both EN and UVLO are above the respective voltage thresholds. The
UVLO circuit monitors input voltage (VI) to prevent device turnon before VI rises above the lockout voltage. The
UVLO circuit also causes a shutdown when VI falls below lockout. The EN signal allows independent logic-level
turnon and shutdown of the LDO when the input voltage is present. EN can be connected directly to VI if
independent turnon is not needed.
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Feature Description (continued)
7.3.3 Soft-Start and Inrush Current
Soft-start refers to the ramp-up characteristic of the output voltage during LDO turnon after EN and UVLO have
achieved threshold voltage. The noise reduction capacitor serves a dual purpose of both governing output noise
reduction and programming the soft-start ramp during turnon.
Inrush current is defined as the current through the LDO from IN to OUT during the time of the turnon ramp up.
Inrush current then consists primarily of the sum of load and charge current to the output capacitor. Inrush
current can be estimated by Equation 1:
VOUT(t)
COUT ´ dVOUT(t)
IOUT(t) =
+
RLOAD
dt
where:
• VOUT(t) is the instantaneous output voltage of the turnon ramp,
• dVOUT(t)/dt is the slope of the VO ramp, and
• RLOAD is the resistive load impedance
(1)
7.4 Device Functional Modes
The TPS7A4701-EP has the following functional modes:
1. Enabled: When EN goes above V+EN(HI), the device is enabled.
2. Disabled: When EN goes below V+EN(LO), the device is disabled. During this time, OUT is high impedance,
and the current into IN does not exceed I(SHDN).
7.5 Programming
7.5.1 ANY-OUT Programmable Output Voltage
TPS7A4701-EP can be used in ANY-OUT mode. For ANY-OUT operation, the device does not use external
resistors to set the output voltage, but uses device pins 4, 5, 6, 8, 9, 10, 11, and 12 to program the regulated
output voltage. Each pin is either connected to ground (active) or is left open (floating). The ANY-OUT
programming is set by Equation 2 as the sum of the internal reference voltage (V(REF) = 1.4 V) plus the
accumulated sum of the respective voltages assigned to each active pin; that is, 100 mV (pin 12), 200 mV (pin
11), 400 mV (pin 10), 800 mV (pin 9), 1.6 V (pin 8), 3.2 V (pin 6), 6.4 V (pin 5), or 6.4 V (pin 4). Table 1
summarizes these voltage values associated with each active pin setting for reference. By leaving all program
pins open, or floating, the output is thereby programmed to the minimum possible output voltage equal to V(REF).
VOUT = VREF + (S ANY-OUT Pins to Ground)
(2)
Table 1. ANY-OUT Programmable Output Voltage
12
ANY-OUT PROGRAM PINS (Active Low)
ADDITIVE OUTPUT VOLTAGE LEVEL
Pin 4 (6P4V2)
6.4 V
Pin 5 (6P4V1)
6.4 V
Pin 6 (3P2)
3.2 V
Pin 8 (1P6)
1.6 V
Pin 9 (0P8)
800 mV
Pin 10 (0P4)
400 mV
Pin 11 (0P2)
200 mV
Pin 12 (0P1)
100 mV
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Table 2 shows a list of the most common output voltages and the corresponding pin settings. The voltage setting
pins have a binary weight; therefore, the output voltage can be programmed to any value from 1.4 V to 20.5 V in
100-mV steps.
Table 2. Common Output Voltages and Corresponding Pin Settings
PIN NAMES AND VOLTAGE PER PIN
VO (V)
0P1V
100 mV
0P2V
200 mV
0P4V
400 mV
0P8V
800 mV
1P6V
1.6 V
3P2V
3.2 V
6P4V1
6.4 V
6P4V2
6.4 V
1.4
Open
Open
Open
Open
Open
Open
Open
Open
1.5
GND
Open
Open
Open
Open
Open
Open
Open
1.8
Open
Open
GND
Open
Open
Open
Open
Open
2.5
GND
GND
Open
GND
Open
Open
Open
Open
3
Open
Open
Open
Open
GND
Open
Open
Open
3.3
GND
GND
Open
Open
GND
Open
Open
Open
4.5
GND
GND
GND
GND
GND
Open
Open
Open
5
Open
Open
GND
Open
Open
GND
Open
Open
10
Open
GND
GND
Open
GND
Open
GND
Open
12
Open
GND
Open
GND
Open
GND
GND
Open
15
Open
Open
Open
GND
Open
Open
GND
GND
18
Open
GND
GND
Open
Open
GND
GND
GND
20.5
GND
GND
GND
GND
GND
GND
GND
GND
7.5.2 Adjustable Operation
The TPS7A4701-EP has an output voltage range of 1.4 V to 34 V. For adjustable operation, set the nominal
output voltage of the device using two external resistors, as shown in Figure 23.
VIN
CIN
10 mF
CNR/SS
1 mF
VOUT
OUT
IN
TPS7A4701-EP
EN
FB
NR
GND
R1
R2
COUT
47 mF
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Figure 23. Adjustable Operation for Maximum AC Performance
R1 and R2 can be calculated for any output voltage within the operational range. The current through feedback
resistor R2 must be at least 5 µA to ensure stability. Additionally, the current into the FB pin (I(FB), typically 350
nA) creates an additional output voltage offset that depends on the resistance of R1. For high-accuracy
applications, select R2 such that the current through R2 is at least 35 µA to minimize any effects of I(FB) variation
on the output voltage; 10 kΩ is recommended. R1 can be calculated using Equation 3.
V
- VREF
R1 = OUT
V
IFB + REF
R2
where
•
•
VREF = 1.4 V
IFB = 350 nA
(3)
Use 0.1% tolerance resistors to minimize the effects of resistor inaccuracy on the output voltage.
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Table 3 shows the resistor combinations to achieve some standard rail voltages with commercially-available 1%
tolerance resistors. The resulting output voltages yield a nominal error of < 0.5%.
Table 3. Suggested Resistors for Common Voltage Rails
VOUT
R1, Calculated
R1, Closest 1% Value
R2
1.4 V
0Ω
0Ω
∞
1.8 V
2.782 kΩ
2.8 kΩ
9.76 kΩ
3.3 V
13.213 kΩ
13.3 kΩ
9.76 kΩ
5V
25.650 kΩ
25.5 kΩ
10 kΩ
12 V
77.032 kΩ
76.8 kΩ
10.2 kΩ
15 V
101.733 kΩ
102 kΩ
10.5 kΩ
18 V
118.276 kΩ
118 kΩ
10 kΩ
24 V
164.238 kΩ
165 kΩ
10.2 kΩ
To achieve higher nominal accuracy, two resistors can be used in the place of R1. Select the two resistor values
such that the sum results in a value as close as possible to the calculated R1 value.
There are several alternative ways to set the output voltage. The program pins can be pulled low using external
general-purpose input/output pins (GPIOs), or can be hardwired by the given layout of the printed circuit board
(PCB) to set the ANY-OUT voltage. The TPS7A4701 evaluation module (EVM), available for purchase from the
TI eStore, allows the output voltage to be programmed using jumpers.
14
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS7A740x is a high-voltage, low-noise, 1-A LDO. Low-noise performance makes this LDO ideal for
providing rail voltages to noise-sensitive loads, such as PLLs, oscillators, and high-speed ADCs.
8.2 Typical Application
Output voltage is set by grounding the appropriate control pins, as shown in Figure 24. When grounded, all
control pins add a specific voltage on top of the internal reference voltage (V(REF) = 1.4 V). For example, when
grounding pins 0P1V, 0P2V, and 1P6V, the voltage values 0.1 V, 0.2 V, and 1.6 V are added to the 1.4-V
internal reference voltage for VO(nom) equal to 3.3 V, as described in the Programming section.
VIN = 5 V
IN
VOUT = 3.3 V
OUT
10 mF
47 mF
EN
NR
1 mF
0P1V
TPS7A4701-EP
SENSE
Load
GND
0P2V
0P4V 0P8V 1P6V 3P2V 6P4V1 6P4V2
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Figure 24. Typical Application, VOUT = 3.3 V
8.2.1 Design Requirements
Table 4. Design Requirements Table
PARAMETER
DESIGN REQUIREMENT
Input Voltage
5 V, ±10%
Output Voltage
3.3 V, ±3%
Output Current
500 mA
Peak-to-Peak Noise, 10 Hz to 100 kHz
50 µVp-p
8.2.2 Detailed Design Procedure
8.2.2.1 Capacitor Recommendations
These LDOs are designed to be stable using low equivalent series resistance (ESR), ceramic capacitors at the
input, output, and at the noise reduction pin (NR, pin 14). Multilayer ceramic capacitors have become the industry
standard for these types of applications and are recommended here, but must be used with good judgment.
Ceramic capacitors that employ X7R-, X5R-, and COG-rated dielectric materials provide relatively good
capacitive stability across temperature, but the use of Y5V-rated capacitors is discouraged precisely because the
capacitance varies so widely. In all cases, ceramic capacitance varies a great deal with operating voltage and the
design engineer must be aware of these characteristics. It is recommended to apply a 50% derating of the
nominal capacitance in the design.
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Attention must be given to the input capacitance to minimize transient input droop during load current steps
because the TPS7A4701-EP has a very fast load transient response. Large input capacitors are necessary for
good transient load response, and have no detrimental influence on the stability of the device. Note, however,
that using large ceramic input capacitances can also cause unwanted ringing at the output if the input capacitor,
in combination with the wire lead inductance, creates a high-Q peaking effect during transients. For example, a
5-nH lead inductance and a 10-µF input capacitor form an LC filter with a resonance frequency of 712 kHz at the
edge of the control loop bandwidth. Short, well-designed interconnect leads to the up-stream supply minimize
this effect without adding damping. Damping of unwanted ringing can be accomplished by using a tantalum
capacitor, with a few hundred milliohms of ESR, in parallel with the ceramic input capacitor.
8.2.2.1.1 Input and Output Capacitor Requirements
The TPS7A4701-EP is designed and characterized for operation with ceramic capacitors of 10 µF or greater at
the input and output. Optimal noise performance is characterized using a total output capacitor value of 50 µF.
Note especially that input and output capacitances must be located as near as practical to the respective input
and output pins.
8.2.2.1.2 Noise Reduction Capacitor (CNR)
The noise reduction capacitor, connected to the NR pin of the LDO, forms an RC filter for filtering out noise that
might ordinarily be amplified by the control loop and appear on the output voltage. Larger capacitances, up to 1
µF, affect noise reduction at lower frequencies while also tending to further reduce noise at higher frequencies.
Note that CNR also serves a secondary purpose in programming the turnon rise time of the output voltage and
thereby controls the turnon surge current.
8.2.2.2 Dropout Voltage (VDO)
Generally speaking, the dropout voltage often refers to the voltage difference between the input and output
voltage (V(DO) = VI – VO). However, in the Electrical Characteristics V(DO) is defined as the VI – VO voltage at the
rated current (I(RATED)), where the main current pass-FET is fully on in the Ohmic region of operation and is
characterized by the classic RDS(on) of the FET. V(DO) indirectly specifies a minimum input voltage above the
nominal programmed output voltage at which the output voltage is expected to remain within its accuracy
boundary. If the input falls below this V(DO) limit (VI < VO + V(DO)), then the output voltage decreases in order to
follow the input voltage.
Dropout voltage is always determined by the RDS(on) of the main pass-FET. Therefore, if the LDO operates below
the rated current, the V(DO) is directly proportional to the output current and can be reduced by the same factor.
The RDS(on) for the TPS7A4701-EP can be calculated using Equation 4:
VDO
RDS(ON) =
IRATED
(4)
8.2.2.3 Output Voltage Accuracy
The output voltage accuracy specifies minimum and maximum output voltage error, relative to the expected
nominal output voltage stated as a percent. This accuracy error typically includes the errors introduced by the
internal reference and the load and line regulation across the full range of rated load and line operating
conditions over temperature, unless otherwise specified by the Electrical Characteristics. Output voltage
accuracy also accounts for all variations between manufacturing lots.
8.2.2.4 Startup
The startup time for the TPS7A4701-EP depends on the output voltage and the capacitance of the CNR
capacitor. Equation 5 calculates the startup time for a typical device.
5·
§V
tSS 100,000 ‡ CNR ‡ ln ¨ R
¸
© 5 ¹
where
•
•
16
CNR = capacitance of the CNR capacitor
VR = VO voltage if using the ANY-OUT configuration, or 1.4 V if using the adjustable configuration
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8.2.2.5 AC Performance
AC performance of the LDO is typically understood to include power-supply rejection ratio, load step transient
response, and output noise. These metrics are primarily a function of open-loop gain and bandwidth, phase
margin, and reference noise.
8.2.2.5.1 Power-Supply Rejection Ratio (PSRR)
PSRR is a measure of how well the LDO control loop rejects ripple noise from the input source to make the DC
output voltage as noise-free as possible across the frequency spectrum (usually 10 Hz to 10 MHz). Equation 6
gives the PSRR calculation as a function of frequency where input noise voltage [VS(IN)(f)] and output noise
voltage [VS(OUT)(f)] are understood to be purely ac signals.
VS(IN)(f)
PSRR (dB) = 20 Log10
VS(OUT)(f)
(6)
Noise that couples from the input to the internal reference voltage for the control loop is also a primary
contributor to reduced PSRR magnitude and bandwidth. This reference noise is greatly filtered by the noise
reduction capacitor at the NR pin of the LDO in combination with an internal filter resistor (RSS) for optimal
PSRR.
The LDO is often employed not only as a DC-DC regulator, but also to provide exceptionally clean power-supply
voltages that are free of noise and ripple to power-sensitive system components. This usage is especially true for
the TPS7A4701-EP.
8.2.2.5.2 Load Step Transient Response
The load step transient response is the output voltage response by the LDO to a step change in load current
whereby output voltage regulation is maintained. The worst-case response is characterized for a load step of
10 mA to 1 A (at 1 A per microsecond) and shows a classic, critically-damped response of a very stable system.
The voltage response shows a small dip in the output voltage when charge is initially depleted from the output
capacitor and then the output recovers as the control loop adjusts itself. The depth of the charge depletion
immediately after the load step is directly proportional to the amount of output capacitance. However, to some
extent, the speed of recovery is inversely proportional to that same output capacitance. In other words, larger
output capacitances act to decrease any voltage dip or peak occurring during a load step but also decrease the
control-loop bandwidth, thereby slowing response.
The worst-case, off-loading step characterization occurs when the current step transitions from 1 A to 0 mA.
Initially, the LDO loop cannot respond fast enough to prevent a small increase in output voltage charge on the
output capacitor. Because the LDO cannot sink charge current, the control loop must turn off the main pass-FET
to wait for the charge to deplete, thus giving the off-load step its typical monotonic decay (which appears
triangular in shape).
8.2.2.5.3 Noise
The TPS7A4701-EP is designed, in particular, for system applications where minimizing noise on the powersupply rail is critical to system performance. This scenario is the case for phase-locked loop (PLL)-based
clocking circuits for instance, where minimum phase noise is all important, or in-test and measurement systems
where even small power-supply noise fluctuations can distort instantaneous measurement accuracy. Because
the TPS7A4701-EP is also designed for higher voltage industrial applications, the noise characteristic is well
designed to minimize any increase as a function of the output voltage.
LDO noise is defined as the internally-generated intrinsic noise created by the semiconductor circuits alone. This
noise is the sum of various types of noise (such as shot noise associated with current-through-pin junctions,
thermal noise caused by thermal agitation of charge carriers, flicker or 1/f noise that is a property of resistors and
dominates at lower frequencies as a function of 1/f, burst noise, and avalanche noise).
To calculate the LDO RMS output noise, a spectrum analyzer must first measure the spectral noise across the
bandwidth of choice (typically 10 Hz to 100 kHz in units of µV/√Hz). The RMS noise is then calculated in the
usual manner as the integrated square root of the squared spectral noise over the band, then averaged by the
bandwidth.
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8.2.3 Application Curves
VOUT (10 µV/DIV)
VEN (2 V/DIV)
VOUT (1 V/DIV)
ILOAD (500 mA/DIV)
Figure 25. Startup with EN Pin rising (10 ms/DIV)
18
Figure 26. Output Noise Voltage, 10 Hz to 100 kHz (10
ms/DIV)
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9 Power Supply Recommendations
The device is designed to operate from an input voltage supply range of 3 V to 35 V. If the input supply is noisy,
additional input capacitors with low ESR can help improve the output noise performance.
9.1 Power Dissipation (PD)
Power dissipation must be considered in the PCB design. In order to minimize risk of device operation above
125°C, use as much copper area as available for thermal dissipation. Do not locate other power-dissipating
devices near the LDO.
Power dissipation in the regulator depends on the input to output voltage difference and load conditions. PD can
be calculated using Equation 7:
PD = (VOUT - VIN) ´ IOUT
(7)
It is important to note that power dissipation can be minimized, and thus greater efficiency achieved, by proper
selection of the system voltage rails. Proper selection allows the minimum input voltage necessary for output
regulation to be obtained.
The primary heat conduction path for the QFN (RGW) package is through the thermal pad to the PCB. The
thermal pad must be soldered to a copper pad area under the device. Thermal vias are recommended to
improve the thermal conduction to other layers of the PCB.
The maximum power dissipation determines the maximum allowable junction temperature (TJ) for the device.
Power dissipation and junction temperature are most often related by the junction-to-ambient thermal resistance
(θJA) of the combined PCB and device package and the temperature of the ambient air (TA), according to
Equation 8.
TJ = TA + (qJA ´ PD)
(8)
Unfortunately, this thermal resistance (θJA) depends primarily on the heat-spreading capability built into the
particular PCB design, and therefore varies according to the total copper area, copper weight, and location of the
spreading planes. The θJA recorded in the Thermal Information table is determined by the JEDEC standard, PCB,
and copper-spreading area and is to be used only as a relative measure of package thermal performance. Note
that for a well-designed thermal layout, θJA is actually the sum of the QFN package junction-to-case (bottom)
thermal resistance (θJCbot) plus the thermal resistance contribution by the PCB copper. By knowing θJCbot, the
minimum amount of appropriate heat sinking can be used to estimate θJA with Figure 27. θJCbot can be found in
the Thermal Information table.
120
100
qJA (°C/W)
80
60
qJA (RGW)
40
20
0
0
1
2
3
4
5
7
6
8
9
10
2
Board Copper Area (in )
NOTE: θJA value at a board size of 9-in2 (that is, 3-in × 3-in) is a JEDEC standard.
Figure 27. ΘJA vs Board Size
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10 Layout
10.1 Layout Guidelines
For best overall performance, all circuit components are recommended to be located on the same side of the
circuit board and as near as practical to the respective LDO pin connections. Ground return connections to the
input and output capacitor, and to the LDO ground pin, must also be as close to each other as possible and
connected by a wide, component-side, copper surface. The use of vias and long traces to create LDO circuit
connections is strongly discouraged and negatively affects system performance. This grounding and layout
scheme minimizes inductive parasitics and thereby reduces load-current transients, minimizes noise, and
increases circuit stability.
A ground reference plane is also recommended. This reference plane serves to assure accuracy of the output
voltage, shield noise, and behaves similar to a thermal plane to spread (or sink) heat from the LDO device when
connected to the PowerPAD™. In most applications, this ground plane is necessary to meet thermal
requirements.
Use the TPS7A4701 evaluation module (EVM), available for purchase from the TI eStore, as a reference for
layout and application design.
xxxxxxx
xxxxxxx
xxxxxxx
10.2 Layout Example
GND
Signal Ground
10
6
11
5
R1
NC
15
1
16
NC
NR
NC
SN/FB
NC
CNR
EN
20
Power
Ground
Input
R2
CIN
Output
Use R1 and R2
with adjustable
operation
Connect if
ANYOUT
operation is
used.
COUT
Orient input and output capacitors
vertically, so that the grounds are
separated.
Figure 28. Layout Example
20
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10.3 Thermal Protection
The TPS7A4701-EP contains a thermal shutdown protection circuit to turn off the output current when excessive
heat is dissipated in the LDO. Thermal shutdown occurs when the thermal junction temperature (TJ) of the main
pass-FET exceeds 170°C (typical). Thermal shutdown hysteresis assures that the LDO again resets (turns on)
when the temperature falls to 150°C (typical). Because the TPS7A4701-EP is capable of supporting high input
voltages, a great deal of power can be expected to be dissipated across the device at low output voltages, which
causes a thermal shutdown. The thermal time-constant of the semiconductor die is fairly short, and thus the
output oscillates on and off at a high rate when thermal shutdown is reached until power dissipation is reduced.
For reliable operation, the junction temperature must be limited to a maximum of 125°C. To estimate the thermal
margin in a given layout, increase the ambient temperature until the thermal protection shutdown is triggered
using worst-case load and highest input voltage conditions. For good reliability, thermal shutdown must be
designed to occur at least 45°C above the maximum expected ambient temperature condition for the application.
This configuration produces a worst-case junction temperature of 125°C at the highest expected ambient
temperature and worst-case load.
The internal protection circuitry of the TPS7A4701-EP is designed to protect against thermal overload conditions.
The circuitry is not intended to replace proper heat sinking. Continuously running the TPS7A4701-EP into
thermal shutdown degrades device reliability.
10.4 Estimating Junction Temperature
JEDEC standards now recommend the use of PSI thermal metrics to estimate the junction temperatures of the
LDO while in-circuit on a typical PCB board application. These metrics are not strictly speaking thermal
resistances, but rather offer practical and relative means of estimating junction temperatures. These PSI metrics
are determined to be significantly independent of copper-spreading area. The key thermal metrics (ΨJT and ΨJB)
are given in the Thermal Information table and are used in accordance with Equation 9.
YJT: TJ = TT + YJT ´ PD
YJB: TJ = TB + YJB ´ PD
where:
• PD is the power dissipated as explained in Equation 7,
• TT is the temperature at the center-top of the device package, and
• TB is the PCB surface temperature measured 1 mm from the device package and centered on the
package edge.
(9)
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• TPS7A47XXEVM-094 Evaluation Module
• Pros and Cons of Using a Feed-Forward Capacitor with a Low Dropout Regulator
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
ANY-OUT, PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
22
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS7A4701MRGWREP
ACTIVE
VQFN
RGW
20
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
7A4701M
V62/17601-01XE
ACTIVE
VQFN
RGW
20
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-55 to 125
7A4701M
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of