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TS5A2066
SCDS184F – JANUARY 2005 – REVISED AUGUST 2018
TS5A2066 Dual-Channel 10-Ω SPST Analog Switch
1 Features
•
•
•
•
•
•
•
1
•
2 Applications
Low ON-State Resistance (10 Ω)
Control Inputs Are 5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
•
•
•
•
•
•
•
Sample-and-Hold Circuits
Battery-Powered Equipment
Audio and Video Signal Routing
Communication Circuits
Cell Phones
Low-Voltage Data-Acquisition Systems
PDAs
3 Description
The TS5A2066 device is a dual single-pole singlethrow (SPST) analog switch that is designed to
operate from 1.65 V to 5.5 V. This device can handle
both digital and analog signals, and signals up to VCC
can be transmitted in either direction.
Device Information(1)
PART NUMBER
TS5A2066
PACKAGE
BODY SIZE (NOM)
SSOP (DCT)
2.95 mm x 2.80 mm
VSSOP (DCU)
2.30 mm x 2.00 mm
DSBGA (YZP)
1.25 mm x 2.25 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
SPACER
SPACER
Functional Block Diagram
SPST
NO1
COM1
IN1
SPST
NO2
COM2
IN2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A2066
SCDS184F – JANUARY 2005 – REVISED AUGUST 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
8
1
1
1
2
3
4
Absolute Maximum Ratings ...................................... 4
ESD Ratings ............................................................ 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics For 5-V Supply ................ 5
Electrical Characteristics For 3.3-V Supply ............. 7
Electrical Characteristics For 2.5-V Supply ............. 9
Electrical Characteristics For 1.8-V Supply............. 11
Typical Performance ............................................... 13
Parameter Measurement Information ................ 16
Detailed Description ............................................ 21
8.1 Overview ................................................................. 21
8.2 Functional Block Diagram ....................................... 21
8.3 Feature Description................................................. 21
8.4 Device Functional Modes........................................ 21
9
Application and Implementation ........................ 22
9.1 Application Information............................................ 22
9.2 Typical Application ................................................. 22
10 Power Supply Recommendations ..................... 23
11 Layout................................................................... 24
11.1 Layout Guidelines ................................................. 24
11.2 Layout Example .................................................... 24
12 Device and Documentation Support ................. 25
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (June 2017) to Revision F
•
Page
Changed the YZP Package From: Top View To: Bottom View ............................................................................................. 3
Changes from Revision D (April 2010) to Revision E
Page
•
Added Device Information table, Pin Configuration and Functions section, ESD Ratings table, Recommended
Operating Conditions table, Thermal Information table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section....................................... 1
•
Deleted the Summary of Characteristics table ....................................................................................................................... 3
•
Changed pin 8 From: V+ To: VCC in the pinout images .......................................................................................................... 3
•
Deleted the ON-state resistance Min values of 10 Ω and 12 Ω in the Electrical Characteristics For 3.3-V Suppy table ...... 7
•
Deleted the ON-state resistance Min values of 20 Ω in the Electrical Characteristics For 2.5-V Supply table...................... 9
•
Changed Test Conditions for Charge injection From: See Figure 23 To; See Figure 24 in the Electrical
Characteristics For 2.5-V Supply table ................................................................................................................................. 10
•
Deleted the ON-state resistance Min values of 80 Ω and 90 Ω in the Electrical Characteristics For 1.8-V Supply table.... 11
•
Changed V+ to VCC in the Typical Performance graphs ...................................................................................................... 13
•
Changed V+ to VCC in the Parameter Measurement Information images ............................................................................ 16
2
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SCDS184F – JANUARY 2005 – REVISED AUGUST 2018
5 Pin Configuration and Functions
DCT or DCU Package
8 Pin (SSOP or VSSOP)
Top View
NO1 1
8 V
CC
COM1 2
7
IN1
IN2
3
6
COM2
GND
4
5
NO2
YZP Package
8 Pin (DSBGA)
Bottom View
GND
IN2
4
5
D2
NO2
C1 3
6
C2
COM2
D1
COM1
B1
2
7
B2
IN1
NO1
A1
1
8
A2
VCC
Pin Functions
NO.
NAME
DESCRIPTION
1
NO1
2
COM1
Normally open
3
IN2
4
GND
Digital ground
5
NO2
Normally open
6
COM2
7
IN1
Digital control to connect COM to NO
8
VCC
Power supply
Common
Digital control to connect COM to NO
Common
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6 Specifications
6.1 Absolute Maximum Ratings (1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage range (3)
–0.5
6.5
V
VNO
VCOM
Analog voltage range (3) (4) (5)
–0.5
VCC + 0.5
V
IK
Analog port diode current
VNO, VCOM < 0 or VNO, VCOM > VCC
–50
50
mA
INO
ICOM
On-state switch current
VNO, VCOM = 0 to VCC
–50
50
mA
–0.5
6.5
(3) (4)
VIN
Digital input voltage range
IIK
Digital input clamp current
ICC
Continuous current through VCC
IGND
Continuous current through GND
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
VIN < 0
–50
UNIT
V
mA
100
mA
–100
100
mA
–65
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. .
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage range
1.65
5.5
UNIT
V
VNO VCOM
Analog voltage range
0
VCC
V
VIN
Digital input voltage range
0
5.5
V
6.4 Thermal Information
TS5A2066
THERMAL METRIC (1)
DCT (SSOP)
DCU (VSSOP) YZP (DSBGA)
8 PINS
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
214.1
212.8
99.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
106.8
93.6
1.0
°C/W
RθJB
Junction-to-board thermal resistance
127.8
133.6
29.6
°C/W
ψJT
Junction-to-top characterization parameter
30.2
30.4
0.5
°C/W
ψJB
Junction-to-board characterization parameter
125.5
133.1
29.8
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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SCDS184F – JANUARY 2005 – REVISED AUGUST 2018
6.5 Electrical Characteristics For 5-V Supply (1)
VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
UNIT
VCC
V
Analog Switch
Analog signal
range
VCOM, VNO
0
ron
0 ≤ VNO ≤ VCC,
ICOM = –32 mA,
Switch ON,
See Figure 16
ON-state
resistance
match
between
channels
Δron
VNO = 3.15 V,
ICOM = –32 mA,
Switch ON,
SeeFigure 16
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ VCC,
ICOM = –32 mA,
Switch ON,
See Figure 16
INO(OFF)
VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,
Switch OFF,
See Figure 17
ICOM(OFF)
VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,
Switch OFF,
See Figure 17
INO(ON)
VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open
Switch ON,
See Figure 18
ICOM(ON)
VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,
Switch ON,
See Figure 18
ON-state
resistance
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
25°C
Full
7.5
4.5 V
15
25°C
Full
0.4
3
3.5
Full
5.5 V
25°C
Full
5.5 V
25°C
Full
5.5 V
40
–8
nA
50
50
–12
nA
40
–4
–70
Ω
30
–50
–40
5.5 V
–10
–40
–50
25°C
Full
8
–30
Ω
5
4.5 V
25°C
Ω
1
4.5 V
25°C
Full
10
40
–30
nA
70
–70
70
nA
Digital Control Input (IN)
Input logic high
VIH
Full
VCC × 0.7
5.5
V
Input logic low
VIL
Full
0
VCC × 0.3
V
25°C
–0.1
Input leakage
current
(1)
IIH, IIL
VIN = 5.5 V or 0
Full
5.5 V
0.05
–1
0.1
1
µA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics For 5-V Supply(1) (continued)
VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
25°C
5V
4.4
5.2
5.8
Full
4.5 V
to
5.5 V
3.4
25°C
5V
1.7
Full
4.5 V
to
5.5 V
1.3
UNIT
Dynamic
tON
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Turn-off time
tOFF
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 24
25°C
5V
1
pC
VNO = VCC or GND,
Switch OFF,
See Figure 19
25°C
5V
5.5
pF
VCOM = VCC or
GND,
Switch OFF,
See Figure 19
25°C
5V
5.5
pF
VNO = VCC or GND,
Switch ON,
See Figure 19
25°C
5V
13.5
pF
VCOM = VCC or
GND,
Switch ON,
See Figure 19
25°C
5V
13.5
pF
Turn-on time
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON capacitance
CNO(ON)
COM
ON capacitance
CCOM(ON)
6.1
2.6
ns
3.6
4.2
ns
Digital input
capacitance
CIN
VIN = VCC or GND,
See Figure 19
25°C
5V
2.5
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 21
25°C
5V
300
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
5V
–68
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
5V
–66
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
5V
0.01%
VIN = VCC or GND,
Switch ON or OFF
Supply
Positive supply
current
6
ICC
25°C
Full
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5.5 V
0.1
1
5
µA
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6.6 Electrical Characteristics For 3.3-V Supply (1)
VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
UNIT
VCC
V
Analog Switch
Analog signal
range
VCOM, VNO
0
ron
0 ≤ VNO ≤ VCC,
ICOM = –24 mA,
Switch ON,
See Figure 16
ON-state
resistance
match
between
channels
Δron
VNO = 2.1 V,
ICOM = –24 mA,
Switch ON,
See Figure 16
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ VCC,
ICOM = –24 mA,
Switch ON,
See Figure 16
INO(OFF)
VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,
Switch OFF,
See Figure 17
ICOM(OFF)
VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,
Switch OFF,
See Figure 17
VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 18
VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,
Switch ON,
See Figure 18
ON-state
resistance
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
25°C
Full
12
3V
20
25°C
INO(ON)
ICOM(ON)
Full
0.5
3.5
7
Full
3.6 V
25°C
Full
3.6 V
25°C
Full
3.6 V
40
–7
nA
50
50
–7
nA
40
–40
–70
Ω
30
–50
–40
3.6 V
–6
–40
–50
25°C
Full
12
–30
Ω
8
3V
25°C
Ω
1.5
3V
25°C
Full
15
40
–20
nA
70
–70
70
nA
Digital Control Input (IN)
Input logic high
VIH
Full
VCC × 0.7
5.5
V
Input logic low
VIL
Full
0
VCC × 0.3
V
25°C
–0.1
Input leakage
current
(1)
IIH, IIL
VIN = 5.5 V or 0
Full
3.6 V
0.05
–1
0.1
1
µA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics For 3.3-V Supply(1) (continued)
VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
25°C
3.3 V
4.9
5.6
6.4
Full
3 V to
3.6 V
4.3
25°C
3.3 V
2
Full
3 V to
3.6 V
1.3
UNIT
Dynamic
Turn-on time
tON
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Turn-off time
tOFF
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 24
25°C
3.3 V
0.5
pC
VNO = VCC or
GND,
Switch OFF,
See Figure 19
25°C
3.3 V
5.5
pF
VCOM = VCC or
GND,
Switch OFF,
See Figure 19
25°C
3.3 V
6
pF
VNO = VCC or
GND,
Switch ON,
See Figure 19
25°C
3.3 V
14
pF
VCOM = VCC or
GND,
Switch ON,
See Figure 19
25°C
3.3 V
14
pF
VIN = VCC or GND,
See Figure 19
25°C
3.3 V
3
pF
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON capacitance
CNO(ON)
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
7.1
2.7
ns
3.7
4.7
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 21
25°C
3.3 V
300
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
3.3 V
–68
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
3.3 V
–66
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
3.3 V
0.065%
VIN = VCC or GND,
Switch ON or OFF
Supply
Positive supply
current
8
ICC
25°C
Full
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3.6 V
0.1
1
5
µA
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6.7 Electrical Characteristics For 2.5-V Supply (1)
VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
UNIT
VCC
V
Analog Switch
Analog signal
range
VCOM, VNO
0
ron
0 ≤ VNO ≤ VCC,
ICOM = –8 mA,
Switch ON,
See Figure 16
ON-state
resistance
match
between
channels
Δron
VNO = 1.6 V,
ICOM = –8 mA,
Switch ON,
SeeFigure 16
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ VCC,
ICOM = –8 mA,
Switch ON,
See Figure 16
INO(OFF)
VNO = 0.5 V,
VCOM = 2.2 V,
or
VNO = 2.2 V,
VCOM = 0.5 V,
Switch OFF,
See Figure 17
ICOM(OFF)
VCOM = 0.5 V,
VNO = 2.2 V,
or
VCOM = 2.2 V,
VNO = 0.5 V,
Switch OFF,
See Figure 17
INO(ON)
VNO = 0.5 V,
VCOM = Open,
or
VNO = 2.2 V,
VCOM = Open,
Switch ON,
See Figure 18
ICOM(ON)
VCOM = 0.5 V,
VNO = Open,
or
VCOM = 2.2 V,
VNO = Open,
Switch ON,
See Figure 18
ON-state
resistance
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
25°C
Full
22
2.3 V
30
25°C
Full
0.5
Full
5
16
2.7 V
25°C
Full
2.7 V
25°C
Full
2.7 V
40
–7.5
nA
50
50
–5
nA
40
–40
–70
Ω
30
–50
–40
2.7 V
–5.5
–40
–50
25°C
Full
25
–30
Ω
18
2.3 V
25°C
Full
1.5
2.3 V
25°C
Ω
40
–12
nA
70
–70
70
VCC ×
0.7
5.5
nA
Digital Control Input (IN)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
IIH, IIL
Full
VIN = 5.5 V or 0
Full
0
25°C
–0.1
Full
2.7 V
VCC × 0.3
0.05
–1
0.1
1
V
V
µA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics For 2.5-V Supply(1) (continued)
VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
25°C
2.5 V
5.7
6.4
8.1
Full
2.3 V to
2.7 V
4.4
25°C
2.5 V
2.1
Full
2.3 V to
2.7 V
1.8
UNIT
Dynamic
Turn-on time
tON
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Turn-off time
tOFF
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 24
25°C
2.5 V
0.5
pC
VNO = VCC or
GND,
Switch OFF,
See Figure 19
25°C
2.5 V
6
pF
VCOM = VCC or
GND,
Switch OFF,
See Figure 19
25°C
2.5 V
6
pF
VNO = VCC or
GND,
Switch ON,
See Figure 19
25°C
2.5 V
14
pF
VCOM = VCC or
GND,
Switch ON,
See Figure 19
25°C
2.5 V
14
pF
pF
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON capacitance
CNO(ON)
COM
ON capacitance
CCOM(ON)
8.5
3.1
ns
4.3
4.8
ns
Digital input
capacitance
CIN
VIN = VCC or GND,
See Figure 19
25°C
2.5 V
3
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 21
25°C
2.5 V
300
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
2.5 V
–68
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
2.5 V
–66
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
2.5 V
0.35%
VIN = VCC or GND,
Switch ON or OFF
Supply
Positive supply
current
10
ICC
25°C
Full
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0.1
1
5
µA
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6.8 Electrical Characteristics For 1.8-V Supply (1)
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
UNIT
VCC
V
Analog Switch
Analog signal
range
VCOM, VNO
0
ron
0 ≤ VNO ≤ VCC,
ICOM = –4 mA,
Switch ON,
See Figure 16
ON-state
resistance
match
between
channels
Δron
VNO = 1.15 V,
ICOM = –4 mA,
Switch ON,
See Figure 16
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ VCC,
ICOM = –4 mA,
Switch ON,
See Figure 16
INO(OFF)
VNO = 0.3 V,
VCOM = 1.65 V,
or
VNO = 1.65 V,
VCOM = 0.3 V,
Switch OFF,
See Figure 17
ICOM(OFF)
VCOM = 0.3 V,
VNO = 1.65 V,
or
VCOM = 1.65 V,
VNO = 0.3 V,
Switch OFF,
See Figure 17
INO(ON)
VNO = 0.3 V,
VCOM = Open,
or
VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 18
ICOM(ON)
VCOM = 0.3 V,
VNO = Open,
or
VCOM = 1.65 V,
VNO = Open,
Switch ON,
See Figure 18
ON-state
resistance
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
25°C
Full
85
1.65 V
120
25°C
Full
0.9
1.65 V
Full
75
1.65 V
25°C
Full
25°C
Full
25°C
Full
1.95 V
7
nA
40
40
–8.5
nA
50
50
–40
–70
1.95 V
–7
Ω
30
40
–50
–40
25°C
Full
–40
–50
1.95 V
–6
Ω
85
100
–30
1.95 V
2
6
25°C
Ω
nA
70
–70
70
nA
Digital Control Input (IN)
Input logic high
VIH
Full
VCC ×
0.65
5.5
Input logic low
VIL
Full
0
VCC ×
0.35
Input leakage
current
IIH, IIL
(1)
VIN = 5.5 V or 0
25°C
Full
1.95 V
–0.1
0.05
–1
0.1
1
V
V
µA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics For 1.8-V Supply(1) (continued)
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
25°C
1.8 V
9.3
10.4
11.5
Full
1.65 V
to
1.95 V
6.8
25°C
1.8 V
3.3
Full
1.65 V
to
1.95 V
2.4
UNIT
Dynamic
tON
VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Turn-off time
tOFF
VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 24
25°C
1.8 V
0.5
pC
VNO = VCC or GND,
Switch OFF,
See Figure 19
25°C
1.8 V
6
pF
VCOM = VCC or
GND,
Switch OFF,
See Figure 19
25°C
1.8 V
6
pF
VNO = VCC or GND,
Switch ON,
See Figure 19
25°C
1.8 V
14.5
pF
VCOM = VCC or
GND,
Switch ON,
See Figure 19
25°C
1.8 V
14.5
pF
pF
Turn-on time
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON capacitance
CNO(ON)
COM
ON capacitance
CCOM(ON)
12.9
4.3
ns
5.2
6.5
ns
Digital input
capacitance
CIN
VIN = VCC or GND,
See Figure 19
25°C
1.8 V
3
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 21
25°C
1.8 V
293
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
1.8 V
–68
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
1.8 V
–66
dB
Total harmonic
distortion
THD
RL = 10 kΩ,
CL = 50 pF,
f = 20 Hz to 20
kHz,
See Figure 25
25°C
1.8 V
2.7%
VIN = VCC or GND,
Switch ON or OFF
Supply
Positive supply
current
12
ICC
25°C
Full
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0.1
1
5
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6.9 Typical Performance
90
25
TA = 25°C
NO1 COM1
80
70
Figure 1
TA = 25°C
NO1 COM1
20
r on (Ω)
60
15
r on(Ω)
50
40
10
30
20
5
10
0
0
0
0.25
0.5
0.75
1
1.25
1.5
0
1.75
0.3
0.6
0.9
1.2
VCC = 1.65 V
1.8
2.1
2.4
4
4.5
VCC = 2.3 V
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM
14
10
TA = 25°C
NO1 COM1
12
9
TA = 25°C
NO1 COM1
8
10
7
8
6
r on (Ω)
r on (Ω)
1.5
VCOM (V)
VCOM (V)
6
5
4
3
4
2
2
1
0
0
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
VCOM (V)
2.5
3
3.5
VCOM (V)
VCC = 3 V
VCC = 4.5 V
Figure 3. ron vs VCOM
Figure 4. ron vs VCOM
10
16
12
TA = −40°C
TA = 25°C
TA = 85°C
9
TA = −40°C
TA = 25°C
TA = 85°C
14
8
7
10
r on (Ω)
r on (Ω)
2
8
6
5
4
6
3
4
2
2
1
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
VCOM (V)
Figure 5. ron vs VCOM (VCC = 3 V)
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1.5
2
2.5
3
VCOM (V)
3.5
4
4.5
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Figure 6. ron vs VCOM (VCC = 4.5 V)
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Typical Performance (continued)
4.0
20
16
3.0
INO2(OFF)
14
2.5
ICOM2(ON), ICOM2(OFF)
12
2.0
INO1(ON)
10
QC
ICOM1(ON), ICOM1(OFF)
8
3.3 V
1.5
1.0
INO1(OFF)
5V
0.5
6
4
0.0
2
−0.5
−1.0
0
−40°C
25°C
0
85°C
1
2
10
5
8
4
t ON/t OFF (ns)
t ON/t OFF (ns)
6
t ON
t OFF
2
6
t ON
3
t OFF
2
1
0
1.65
2.15
2.65
3.15
3.65
4.15
4.65
0
5.15
−40°C
°C
Supply Voltage (V)
25
85
Figure 10. tON and tOFF vs Temperature (VCC = 5 V)
3.5
3
°C
TA (C)
Figure 9. tON and tOFF vs VCC
5
0
TA = 25°C
Gain
−1
2.5
Gain (dB)
Logic Threshold (V)
5
Figure 8. Charge Injection (QC) vs VCOM
12
4
4
VCOM
TA (C)
Figure 7. Leakage Current vs Temperature
6
3
2
VIH
1.5
–5
TA = 25°C
Phase
–2
–10
–15
–4
–20
–6
–25
1
VIL
–8
–30
0.5
0
1.6
0
Phase (°)
Leakage (nA)
3.5
INO2(ON)
18
–10
0.1
2.1
2.6
3.1
3.6 4.1
VCC (V)
4.6
5.1
5.6
10
100
Frequency (MHz)
Figure 12. Bandwidth (VCC = 5 V)
1
–35
1000
Figure 11. Logic Threshold vs VCC
14
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Typical Performance (continued)
7
–20
6
THD + Noise (%)
0
Gain (dB)
–40
–60
Crosstalk
–80
OFF Isolation
–100
–120
0.1
THD (3.3 V)
5
4
3
2
1
1
10
100
1000
THD (5 V)
0
0.1
1
Frequency (MHz)
Figure 13. OFF Isolation and Crosstalk (VCC = 5 V)
10
Frequency (MHz)
100
1000
Figure 14. Total Harmonic Distortion vs Frequency
70
60
ICC TYP (nA)
50
40
30
20
10
0
−40°C
°C
°C
25 85
TA (C)
Figure 15. Power-Supply Current vs Temperature
(VCC = 5 V)
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7 Parameter Measurement Information
Table 1. Parameter Description
SYMBOL
VCOM
VNO
ron
Δron
ron(flat)
Voltage at COM
Voltage at NO
Resistance between COM and NO ports when the channel is ON
Difference of ron between channels in a specific device
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VIN
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CIN
Capacitance of IN
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2).
This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
ICC
16
DESCRIPTION
Static power-supply current with the control (IN) pin at VCC or GND
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VCC
VNO NO
COM
+
VCOM
Channel ON
r on =
VIN
I COM
IN
VCOM – VNO
Ω
I COM
VIN = VIH or V IL
+
GND
Figure 16. ON-State Resistance (ron)
VCC
VNO NO
COM
+
VCOM
+
VIN
OFF-State Leakage Current
Channel OFF
VIN = VIH or V IL
IN
+
GND
Figure 17. OFF-State Leakage Current (ICOM(OFF), INO(OFF))
VCC
VNO NO
COM
+
VIN
VCOM
ON-State Leakage Current
Channel ON
VIN = VIH or V IL
IN
+
GND
Figure 18. ON-State Leakage Current (ICOM(ON), INO(ON))
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VCC
VNO
NO
Capacitance
Meter
VBIAS = VCC or GND
VIN = VIH or V IL
VCOM COM
VBIAS
VIN
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
IN
GND
Figure 19. Capacitance (CIN, CCOM(OFF), CCOM(ON), CNO(OFF), CNO(ON))
VCC
NO
VCOM
(3)
VNO
RL
CL
t ON
300 Ω
35 pF
t OFF
300 Ω
35 pF
COM
CL (2)
VIN
TEST
RL
IN
Logic
Input (1)
VCC
Logic
Input
(VIN)
GND
50%
50%
0
t ON
Switch
Output
(VNO)
t OFF
90%
90%
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
(3)
See Electrical Characteristics tables for VCOM.
Figure 20. Turn-On (tON) and Turn-Off Time (tOFF)
VCC
Network Analyzer
50 Ω
VNO
NO
Channel ON: NO to COM
COM
VCOM
Source
Signal
VIN = VCC or GND
Network Analyzer Setup
50 Ω
VIN
+
IN
Source Power = 0 dBm
(632-mV P-P at 50- Ω load)
GND
DC Bias = 350 mV
Figure 21. Bandwidth (BW)
18
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VCC
Network Analyzer
Channel OFF: NO to COM
50 Ω
VNO NO
VIN = VCC or GND
VCOM
COM
Source
Signal
50 Ω
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- Ω load)
VIN IN
50 Ω
+
GND
DC Bias = 350 mV
Figure 22. OFF Isolation (OISO)
VCC
Network Analyzer
50 Ω
VNO1
Source
Signal
NO1
Channel ON: NO to COM
COM1
NO2
VNO2
VIN
50 Ω
Network Analyzer Setup
50 Ω
COM2
Source Power = 0 dBm
(632 mV P-P at 50 -Ω load)
IN
+
DC Bias = 350 mV
GND
Figure 23. Crosstalk (XTALK)
VCC
RGEN
VGEN
Logic
Input
OFF
(VIN)
VIH
ON
OFF V
IL
NO
COM
+
VCOM
VCOM
ΔVCOM
CL(2)
VIN
Logic
Input (1)
VGEN = 0 to V CC
IN
RGEN = 0
CL = 0.1 nF
QC = CL × ΔVCOM
VIN = VIH or V IL
GND
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
Figure 24. Charge Injection (QC)
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Channel ON: COM to NC
VSOURCE = VCC P-P
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VIN = VIH or V IL
RL = 600 Ω
f SOURCE = 20 Hz to 20 kHz
CL = 50 pF
VCC/2
VCC
Audio Analyzer
RL
10 µ F
Source
Signal
10 µF
NO
COM
600 Ω
600 Ω
CL(1)
VIN
IN
GND
600 Ω
(1)
CL includes probe and jig capacitance.
Figure 25. Total Harmonic Distortion (THD)
20
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8 Detailed Description
8.1 Overview
The TS5A2066 device is a 2-channel single-pole single-throw (1:1 SPST) analog switch that is designed to
operate from 1.65 V to 5.5 V. This device can handle both digital and analog signals, and signals up to VCC can
be transmitted in either direction
8.2 Functional Block Diagram
SPST
NO1
COM1
IN1
SPST
NO2
COM2
IN2
8.3 Feature Description
5-V tolerant control inputs allow 5-V logic levels to be present on the IN pin irrespective of the voltage on VCC
pin.
Low ON-resistance and THD performance allows minimal signal distortion through device.
8.4 Device Functional Modes
Table 2 shows the functional modes for TS5A23166.
Table 2. Function Table
IN
NO TO COM,
COM TO NO
L
OFF
H
ON
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TS5A2066 2-channel, 1:1 SPST analog switch is a basic component that could be used in any electrical
system design that signal isolation.
9.2 Typical Application
3.3V
3.3V
System
Controller
Data
VCC
SPST switch
NO1
IN1
IN2
Device 1
3.3V
COM1
NO2
COM2
GND
Device 2
Figure 26. Typical Application Circuit
9.2.1 Design Requirements
Ensure that all of the signals passing through the switch are within the specified ranges in the recommended
operating conditions to ensure proper performance.
9.2.2 Detailed Design Procedure
The TS5A2066 can be properly operated without any external components.
Unused signal path pins COM or NO maybe left floating or connected to ground through a 50-Ω resistor to
prevent signal reflections back into the device.
TI recommends that the digital control pins (INX) be pulled up to VCC or down to GND to avoid undesired switch
positions that could result from the floating pin. Leaving the logic pins floating may increase ICC. Refer to the TI
application report, Implications of Slow or Floating CMOS Inputs (SCBA004), for further details.
22
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Typical Application (continued)
9.2.3 Application Curves
90
25
TA = 25°C
NO1 COM1
80
70
Figure 1
TA = 25°C
NO1 COM1
20
15
50
r on(Ω)
r on (Ω)
60
40
10
30
20
5
10
0
0
0
0.25
0.5
0.75
1
1.25
1.5
0
1.75
0.3
0.6
0.9
1.2
1.8
2.1
2.4
4
4.5
VCOM (V)
VCOM (V)
VCC = 1.65 V
VCC = 2.3 V
Figure 27. ron vs VCOM
Figure 28. ron vs VCOM
14
10
TA = 25°C
NO1 COM1
12
9
TA = 25°C
NO1 COM1
8
10
7
8
6
r on (Ω)
r on (Ω)
1.5
6
5
4
3
4
2
2
1
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
VCOM (V)
1.5
2
2.5
3
3.5
VCOM (V)
VCC = 3 V
VCC = 4.5 V
Figure 29. ron vs VCOM
Figure 30. ron vs VCOM
10 Power Supply Recommendations
Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum
ratings, because stresses beyond the listed ratings can cause permanent damage to the device. Always
sequence VCC on first, followed by NO, NC, or COM. Although it is not required, power-supply bypassing
improves noise margin and prevents switching noise propagation from the VCC supply to other components. A
0.1-μF capacitor, connected from VCC to GND, is adequate for most applications. Copyright
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TS5A2066
SCDS184F – JANUARY 2005 – REVISED AUGUST 2018
www.ti.com
11 Layout
11.1 Layout Guidelines
High-speed switches require proper layout and design procedures for optimum performance. Reduce stray
inductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are as close to the
device as possible. Use large ground planes where possible.
11.2 Layout Example
LEGEND
VIA to Power Plane
Polygonal Copper Pour
VIA to GND Plane (Inner Layer)
Bypass Capacitor
Vcc
To System
1
NO1
2
COM1
3
IN2
4
GND
VCC 8
To System
To System
To System
IN1 7
COM2 6
NO2 5
To System
To System
Figure 31. Layout Example
24
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TS5A2066
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SCDS184F – JANUARY 2005 – REVISED AUGUST 2018
12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TS5A2066DCTR
ACTIVE
SM8
DCT
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JAG
Z
Samples
TS5A2066DCUR
ACTIVE
VSSOP
DCU
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JAGR
Samples
TS5A2066DCURE4
ACTIVE
VSSOP
DCU
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JAGR
Samples
TS5A2066DCURG4
ACTIVE
VSSOP
DCU
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JAGR
Samples
TS5A2066YZPR
ACTIVE
DSBGA
YZP
8
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
J4N
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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