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UCC28610
SLUS888G – JANUARY 2009 – REVISED SEPTEMBER 2015
UCC28610 Green-Mode Flyback Controller
1 Features
3 Description
•
The UCC28610 brings a new level of performance
and reliability to the AC and DC consumer power
supply solution.
1
•
•
•
•
•
•
•
•
•
Cascoded Configuration Allows Fully Integrated
Current Control Without External Sense Resistor
Fast Start Up With Low Standby Power Achieved
by Cascode Configuration
Frequency and Peak Current Modulation for
Optimum Efficiency Over Entire Operating Range
Green-Mode (GM) Burst Switching Packets
Improve No-Load Efficiency
Advanced Overcurrent Protection Limits RMS
Input and Output Currents
Thermal Shutdown
Timed Overload With Retry or Latch-Off
Response
Programmable Opto-Less Output Overvoltage
Protection
Fast Latched Fault Recovery
8-Pin SOIC Package and 8-Pin PDIP Lead-Free
Packages
2 Applications
•
•
•
•
A PWM modulation algorithm varies both the
switching frequency and primary current while
maintaining discontinuous or transition mode
operation over the entire operating range. Combined
with a cascoded architecture, these innovations result
in
efficiency,
reliability,
and
system
cost
improvements
over
a
conventional
flyback
architecture.
The UCC28610 offers a predictable maximum power
threshold and a timed response to an overload,
allowing safe handling of surge power requirements.
Overload fault response is user-programmed for retry
or latch-off mode. Additional protection features
include output overvoltage detection, programmable
maximum on-time, and thermal shutdown.
Device Information(1)
PART NUMBER
UCC28610
Universal Input AC and DC Adapters, 12 to 65 W
High Efficiency Housekeeping and Auxillary
Power Supplies
Offline Battery Chargers
Consumer Electronics (DVD Players, Set-Top
Boxes, DTV, Gaming, Printers)
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm x 3.91 mm
PDIP (8)
9.81 mm x 6.35 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Application Schematic
+
VOUT
VIN
AC
-
UCC28610
MOT VGG
CL
DRV
ZCD
GND
FB
VDD
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC28610
SLUS888G – JANUARY 2009 – REVISED SEPTEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
5
6
6
9
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 13
7.3 Feature Description................................................. 13
7.4 Device Functional Modes........................................ 18
8
Application and Implementation ........................ 19
8.1 Application Information............................................ 19
8.2 Typical Application ................................................. 31
9 Power Supply Recommendations...................... 39
10 Layout................................................................... 39
10.1 Layout Guidelines ................................................. 39
10.2 Layout Example .................................................... 40
11 Device and Documentation Support ................. 42
11.1
11.2
11.3
11.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
42
42
42
42
12 Mechanical, Packaging, and Orderable
Information ........................................................... 42
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (November 2014) to Revision G
•
Page
Added Pin Configuration and Functions section, ESD Rating table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision E (September 2012) to Revision F
Page
•
Changed updated typical application drawing on first page. .................................................................................................. 1
•
Added Thermal Information Section. ...................................................................................................................................... 5
•
Changed ESD Rating, Human Body Model from 2000 V to 1500 V. ..................................................................................... 5
•
Changed Electrical Characteristics FB = 0 V to IFB = 10 µA................................................................................................. 6
•
Changed Voltage of CL pin max value from 1.05 V to 1.10 V. .............................................................................................. 7
•
Changed IFB range for Green Mode (GM) modulation min value from 50 µA to 45 µA. ........................................................ 7
•
Changed ZCD low clamp voltage min value from -200 mV to -220 mV................................................................................. 7
•
Changed Electrical Characteristics FB = 0 V to IFB = 10 µA................................................................................................. 7
•
Changed Electrical Characteristics FB = 0 V to IFB = 10 µA................................................................................................. 8
•
Changed Figure 1................................................................................................................................................................... 8
•
Changed Symplified Block Diagram .................................................................................................................................... 11
•
Changed Figure 20............................................................................................................................................................... 16
•
Changed High Frequency Ringing Solutions, (a) ferrite chip, (b) CDRV and (c) RG-OFF drawing. ................................... 17
•
Changed Basic Flyback Converter and Waveforms at Peak Load and Minimum VBULK Voltage drawing........................... 19
•
Changed Start-Up Currents for the Cascode Architecture drawing. .................................................................................... 22
•
Changed Feedback Function text......................................................................................................................................... 23
•
Changed FB Details drawing................................................................................................................................................ 24
•
Changed Modulation Control Blocks drawing....................................................................................................................... 25
•
Changed Control Diagram with Operating Modes drawing. ................................................................................................. 26
•
Changed Recommended Operating Conditions Application drawing. ................................................................................. 31
•
Changed Basic Flyback Converter and Waveforms at Peak Load and Minimum VBULK Voltage drawing........................... 34
2
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SLUS888G – JANUARY 2009 – REVISED SEPTEMBER 2015
•
Changed Feedback Function text......................................................................................................................................... 35
•
Changed FB Details drawing................................................................................................................................................ 36
Changes from Revision D (January 2011) to Revision E
•
Page
Changed Symplified Block Diagram .................................................................................................................................... 11
Changes from Revision C (January 2009) to Revision D
Page
•
Deleted Equation 7 .............................................................................................................................................................. 20
•
Deleted Equation 7 .............................................................................................................................................................. 34
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SLUS888G – JANUARY 2009 – REVISED SEPTEMBER 2015
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5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
P Package
8-Pin PDIP
Top View
FB
1
8
VDD
FB
1
8
VDD
ZCD
2
7
GND
ZCD
2
7
GND
CL
3
6
DRV
CL
3
6
DRV
MOT
4
5
VGG
MOT
4
5
VGG
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
CL
3
I
(Current Limit) This pin programs the peak primary inductor current that is reached each switching cycle. Program
with a resistor between CL and GND.
DRV
6
O
(DRiVe) This pin drives the source of an external high voltage power MOSFET. The DRV pin carries the full
primary current of the converter. Connect a Schottky diode between DRV and VDD to provide initial bias at start up.
FB
1
I
(FeedBack) The FB current, IFB, commands the operating mode of the UCC28610. The FB voltage is always 0.7 V.
This pin only detects current.
GND
7
—
(GrouND) This pin is the current return terminal for both the analog and power signals in the UCC28610. This
terminal carries the full primary current of the converter. Separate the return path of the bulk capacitor from the
return path of FB, ZCD, MOT, and CL.
MOT
4
I
(Maximum On Time) This pin has three functions:
1. MOT programs the allowed maximum on-time, tMOT, of the internal driver.
2. MOT programs the converter’s reaction to overload and power input under-voltage conditions with either a
shutdown/retry response or a latch-off response.
3. MOT can be used to externally shut down the power supply by pulling MOT to GND. When the pin is released,
the converter will start after a restart delay, tRETRY.
Functions 1 and 2 are programmed with a resistor between MOT and GND.
VDD
8
—
This is the bias supply pin for the UCC28610. It can be derived from an external source or an auxiliary winding.
This pin must be decoupled with a 0.1-μF ceramic capacitor placed between VDD and GND, as close to the device
as possible.
VGG
5
—
This pin provides a DC voltage for the gate of the external high voltage MOSFET. This pin must be decoupled with
a 0.1-μF ceramic capacitor placed between VGG and GND, as close to the device as possible. This pin also
initiates start-up bias through a large value resistor that is connected to the input bulk voltage.
I
(Zero Current Detection) This pin has two functions:
1. ZCD senses the transformer reset based on a valid zero current detection signal.
2. ZCD programs the output Over Voltage Protection (OVP) feature using a resistive divider on the primary side
bias winding of the Flyback transformer.
ZCD
4
2
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6 Specifications
6.1 Absolute Maximum Ratings
All voltages are with respect to GND, –40°C < TJ = TA < 125°C, all currents are positive into and negative out of the specified
terminal (unless otherwise noted) (1)
MIN
MAX
VDD
–0.5
25
DRV, during conduction
–0.5
2.0
DRV, during non-conduction
Input voltage range
(2)
VGG
ZCD, MOT, CL
FB
(3)
(3)
VDD – VGG
Continuous input current
IVGG
Input current range
TJ
20
–0.5
16
–0.5
7
–0.5
1.0
–7
10
(2)
(3)
1
–5
1.5
–40
150
°C
260
°C
150
°C
-5
DRV, pulsed 200ns, 2% duty cycle
Lead Temperature (soldering, 10 sec.)
(1)
(2)
(3)
mA
–3
DRV
Operating junction temperature,
Tstg
V
10
IZCD, IMOT, ICL, IFB
Peak output current
UNIT
Storage temperature range
–65
A
These are stress ratings only. Stress beyond these limits may cause permanent damage to the device. Functional operation of the
device at these or any conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to
absolute maximum rated conditions for extended periods of time may affect device reliability
Voltage on VGG is internally clamped. The clamp level varies with operating conditions. In normal use, VGG is current fed with the
voltage internally limited
In normal use, MOT, CL, ZCD, and FB are connected to resistors to GND and internally limited in voltage swing
6.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
V(ESD)
(1)
(2)
Electrostatic discharge
(1)
UNIT
1500
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
V
500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Unless otherwise noted, all voltages are with respect to GND, -40°C < TJ = TA < 125°C. Components reference, Figure 34.
MIN
MAX
UNIT
VDD
Input voltage
9
20
VGG
Input voltage from low-impedance source
9
13
V
IVGG
Input current from a high-impedance source
10
2000
μA
RMOT
Resistor to GND
RCL
Resistor to GND
RZCD1
CVGG
CBP
Shutdown/Retry mode
V
25
100
kΩ
150
750
kΩ
24.3
100
kΩ
Resistor to auxiliary winding
50
200
kΩ
VGG capacitor
33
200
nF
VDD bypass capacitor, ceramic
0.1
1
μF
Latch-off mode
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6.4 Thermal Information
UCC28610
THERMAL METRIC
(1)
D (SOIC)
P (PDIP)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
117.5
56.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
63.7
45.7
°C/W
RθJB
Junction-to-board thermal resistance
57.8
33.5
°C/W
ψJT
Junction-to-top characterization parameter
15.3
22.9
°C/W
ψJB
Junction-to-board characterization parameter
57.3
33.4
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
Unless otherwise stated: VDD = 12 V, VGG = 12 V, ZCD = 1 V, IFB = 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD
and GND, a 0.1-μF capacitor between VGG and GND, RCL = 33.2 kΩ, RMOT = 380 kΩ, –40°C < TA < +125°C, TJ = TA
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDD and VGG SUPPLY
VGG(OPERATING)
VGG voltage, operating
VDD = 14 V, IVGG = 2.0 mA
13
14
15
V
VGG(DISABLED)
VGG voltage, PWM disabled
VDD = 12 V, IVGG = 15 μA, IFB = 350 μA
15
16
17
V
ΔVGG
Rise in VGG clamping voltage
during UVLO, GM, or Fault
VGG(DISABLED) – VGG(OPERATING)
1.75
2.00
2.15
V
IVGG(SREG)
VGG shunt regulator current
VGG = VGG(DISABLED) -100 mV, VDD = 12
V
6
10
μA
ΔVGG(SREG)
VGG shunt load regulation
10 μA ≤ IVGG ≤ 5 mA, IFB = 350 μA
125
200
mV
VGG(LREG)
VGG LDO regulation voltage
VDD = 20 V, IVGG = – 2 mA
VGG(LREG,
VGG LDO Dropout Voltage
VDD – VGG, VDD = 11 V, IVGG = – 2 mA
DO)
13
V
1.5
2
2.5
V
VDD(ON)
UVLO turn-on threshold
9.7
10.2
10.7
V
VDD(OFF)
UVLO turn-off threshold
7.55
8
8.5
V
ΔVDD(UVLO)
UVLO hysteresis
1.9
2.2
2.5
V
IVDD(OPERATING)
Operating current
VDD = 20 V
3
3.7
mA
IVDD(GM)
Idle current between bursts
IFB = 350 μA
550
900
μA
IVDD(UVLO)
Current for VDD < UVLO
VDD = VDD(ON) – 100 mV, increasing
225
310
μA
RDS,ON(VDD)
VDD Switch on resistance, DRV to
VDD
VGG = 12 V, VDD = 7V, IDRV = 50 mA
4
10
Ω
VDD(FAULT RESET)
VDD for fault latch reset
5.6
6
6.4
V
7.125
7.5
7.875
μs
31
34
38
μs
2.5
MODULATION
tS(HF)
(1)
Minimum switching period,
frequency modulation (FM) mode
IFB = 0 μA,
tS(LF)
(1)
Maximum switching period,
reached at end of FM modulation
range
IFB = IFB, CNR3 – 20 μA,
(1)
(1)
IDRVpk(max)
Maximum peak driver current over
amplitude modulation(AM) range
IFB = 0 μA, RCL = 33. 2 kΩ
2.85
3
3.15
IFB = 0 μA, RCL = 100 kΩ
0.80
0.90
1.0
Minimum peak driver current
reached at end of AM modulation
range
IFB,
CNR2
0.7
0.85
1.1
IDRVpk(min)
IFB,
CNR2 + 10 μA, RCL = 100 kΩ
0.2
0.33
0.5
KP
Maximum power constant
IDRVpk(max) = 3 A
0.54
0.60
0.66
W/μH
IDRVpk(absmin)
Minimum peak driver independent
of RCL or AM control
RCL = OPEN
0.3
0.45
0.6
A
(1)
6
+ 10 μA, RCL = 33.2 kΩ
A
A
tS sets a minimum switching period. Following the starting edge of a PWM on time, under normal conditions, the next on time is initiated
following the first zero crossing at ZCD after tS. The value of tS is modulated by IFB between a minimum of tS(HF) and a maximum of
tS(LF) In normal operation, tS(HF) sets the maximum operating frequency of the power supply and tS(LF) sets the minimum operating
frequency of the power supply.
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Electrical Characteristics (continued)
Unless otherwise stated: VDD = 12 V, VGG = 12 V, ZCD = 1 V, IFB = 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD
and GND, a 0.1-μF capacitor between VGG and GND, RCL = 33.2 kΩ, RMOT = 380 kΩ, –40°C < TA < +125°C, TJ = TA
PARAMETER
TEST CONDITIONS
tBLANK(Ilim)
Leading edge current limit blanking IFB = 0 μA, RCL = 100 kΩ, 1.2-A pull-up on
time
DRV
VCL
Voltage of CL pin
IFB = 0 μA
IFB = (IFB,CNR3 – 20 μA)
(1)
MIN
TYP
MAX
UNIT
120
220
450
ns
2.94
3
3.06
0.95
1.00
1.10
145
165
195
μA
V
IFB range for FM modulation
IFB increasing, tS = tS(LF),
IDRVpk = IDRVpk(max)
(2)
IFB range for AM modulation
tS = tS(LF), IDRVpk ranges from
IDRVpk(max) to IDRVpk(min)
35
45
65
μA
IFB,CNR3 – IFB,CNR2
IFB range for Green Mode (GM)
modulation
IFB increasing until PWM action is disabled
entering a burst-off state
45
70
90
μA
IFB hysteresis during GM
modulation to enter burst on and
off states
IFB decreasing from above IFB,CNR3
10
25
40
μA
Voltage of FB pin
IFB = 10 μA
0.34
0.7
0.84
V
5
20
50
mV
-220
-160
-100
mV
0.1
0.15
0.2
IFB,CNR1
(2)
IFB,CNR2 – IFB,CNR1
(2)
IFB, GM-HYST
(2)
VFB
ZERO CROSSING DETECTION
ZCD(TH)
ZCD zero crossing threshold
ZCD high to low generates switching period
(tS has expired)
ZCD(CLAMP)
ZCD low clamp voltage
IZCD = –10 μA
ZCD(START)
ZCD voltage threshold to enable
the internal start timer
Driver switching periods generated at start
timer rate
tDLY(ZCD)
Delay from zero crossing to Driver
turn-on
150-Ω pull-up to 12-V on DRV
tWAIT(ZCD)
Wait time for zero crossing
detection
Driver turn-on edge generated following tS
with previous zero crossing detected
tST
Starter time-out period
ZCD = 0 V
RDS(on)(DRV)
Driver on-resistance
IDRV(OFF)
Driver off-leakage current
RDS(on)(HSDRV)
High-side driver on-resistance
IDRV = –50 mA
IDRV(DSCH)
DRV bulk discharge current
VDD open, DRV= 12 V, Fault latch set
150
V
ns
2
2.4
2.8
150
240
300
IDRV = 4.0 A
90
190
mΩ
DRV = 12 V
1.5
20
μA
6
11
Ω
2
2.8
3.6
mA
4.85
5
5.15
V
0.6
1
1.7
μs
-0.1
-0.05
0.1
μA
0
1.5
3
μA
200
250
325
ms
μs
DRIVER
OVERVOLTAGE FAULT
ZCD(OVP)
Overvoltage fault threshold at ZCD
tBLANK(OVP)
ZCD blanking and OVP sample
time from the turn-off edge of DRV
IZCD(bias)
ZCD Input bias current
Fault latch set
ZCD = 5 V
OVERLOAD FAULT
IFB(OL)
Current to trigger overload delay
timer
tOL
Delay to overload fault
IFB = 0 A continuously
tRETRY
Retry delay in retry mode or after
shutdown command
RMOT = 76 kΩ
RMOT(TH)
Boundary RMOT between latch-off
and retry modes
See
(3)
750
ms
100
120
150
kΩ
0.7
1
1.3
V
–600
–450
–300
μA
SHUTDOWN THRESHOLD
MOT(SR)
Shutdown-Retry threshold
MOT high to low
IMOT
MOT current when MOT is pulled
low
MOT = 1 V
(2)
(3)
Refer to Figure 1.
A latch-off or a shutdown and retry fault response to a sustained overload is selected by the range of RMOT.
To select the latch-off mode, RMOT should be greater than 150 kΩ and tMOT is given by RMOT × (1.0 × 10-11).
To select the shutdown-retry mode, RMOT should be less than 100 kΩ and tMOT is given by RMOT × (5.0 × 10-11).
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Electrical Characteristics (continued)
Unless otherwise stated: VDD = 12 V, VGG = 12 V, ZCD = 1 V, IFB = 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD
and GND, a 0.1-μF capacitor between VGG and GND, RCL = 33.2 kΩ, RMOT = 380 kΩ, –40°C < TA < +125°C, TJ = TA
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MAXIMUM ON TIME
tMOT
MOT
Latch-OFF
RMOT = 383 kΩ
3.43
3.83
4.23
Shutdown-retry
RMOT = 76 kΩ
3.4
3.8
4.2
2.7
3
3.3
MOT voltage
μs
V
THERMAL SHUTDOWN
TSD
(4)
TSD_HYS
TJ, temperature rising
Hysteresis
TJ, temperature falling, degrees below TSD
(4)
165
°C
15
°C
Thermal shutdown occurs at temperatures higher than the normal operating range. Device performance at or near thermal shutdown
temperature is not specified or assured.
IDRV,PK - Percent of Maximum Peak DRV Current - %
(4)
(4)
(4)
Shutdown temperature
AM
FM
IFB,CNR1
(165mA)
100
GM
I FB,CNR2
(210mA)
IFB,CNR3
(280mA)
IFB,CNR3 - IFB,CNR2
(70mA)
33
133
IFB,CNR2 - IFB,CNR1
fS - Switching Frequency kHz
(45mA)
IGM,HYST
(25mA)
30
0
50
100
150
200
250
300
I FB - Feedback Current - μA
Figure 1. FB Electrical Condition Detail
8
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6.6 Typical Characteristics
Unless otherwise stated: VDD = 12 V, VGG = 12 V, ZCD = 1 V, IFB = 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD
and GND, a 0.1-μF capacitor between VGG and GND, RCL = 33.2 kΩ, RMOT = 380 kΩ, –40°C < TA < +125°C, TJ = TA
4.0
900
IFB = 10 mA
850
VVGG = OPEN
IVDD – Bias Supply Current – mA
IVDD – Bias Supply Current – mA
IFB = 280.4 mA
VZCD = 1V
3.8
VVDD decreasing from 20 V
3.6
3.4
3.2
3.0
2.8
VVGG = OPEN
VVDD decreasing from 20 V
800
750
700
650
600
2.6
550
8
10
12
16
14
18
20
8
10
12
14
16
18
20
VDD – Bias Supply Voltage – V
Figure 2. Bias Supply Current vs Bias Supply Voltage
During Operation
Figure 3. Bias Supply Current vs Bias Supply Voltage
During Green Mode
900
3.5
850
3.0
IVDD – Bias Supply Current – mA
IVDD – Bias Supply Current – mA
VDD – Bias Supply Voltage – V
800
750
700
650
2.5
2.0
VDD rising
0 V to 20V
1.5
IFB= 10 mA,
VDD falling
20V to 0 V
1.0
IFB= 0 mA,
VDD falling
20V to 0 V
0.5
600
550
-40 -25 -10
0.0
5
20
35
50
65
80
0
95 110 125
5
10
15
20
TJ – Junction Temperature – °C
VDD – Bias Voltage – V
Figure 4. Bias Supply Current vs Temperature During Green
Mode
Figure 5. Operational IVDD – Bias Current vs Bias Voltage
8.0
160
tS,HF – Minimum Switching Period – ms
fS – Switching Frequency – kHz
140
120
100
80
60
40
7.8
7.6
7.4
7.2
20
0
8
50
100
150
200
250
300
7.0
-40 -25 -10
5
20
35
50
65
80
95 110 125
IFB – Feedback Control Current – mA
TA – Ambient Temperature – °C
Figure 6. Oscillator Frequency vs Feedback Current
Figure 7. Minimum Switching Period vs Temperature
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Typical Characteristics (continued)
38
3.5
37
3.0
IDRV(pk) – Peak DRV Current – A
tS(LF) – Minimum Switching Period – ms
Unless otherwise stated: VDD = 12 V, VGG = 12 V, ZCD = 1 V, IFB = 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD
and GND, a 0.1-μF capacitor between VGG and GND, RCL = 33.2 kΩ, RMOT = 380 kΩ, –40°C < TA < +125°C, TJ = TA
36
35
34
33
TA = –40°C
2.5
2.0
TA = 25°C
1.5
Ambient
Temperature
(°C)
–40
25
125
1.0
0.5
32
31
-40 -25 -10
0.0
5
20
35
50
65
80
95 110 125
0
50
100
Figure 8. Switching Period During Amplitude Modulaltion vs
Ambient Temperature
200
250
300
Figure 9. Peak DRV Current vs Feedback Current
3.2
5
Best Results
24.3 kW < RCL< 100 kW
IFB = 0 mA
4
IDRV(pk) – Peak DRV Current – A
IDRV(pk) – Peak DRV Current – A
150
IFB - Feedback Current - mA
TA – Ambient Temperature – °C
3
2
1
3.1
3.0
2.9
Avoid Operation Here
2.8
-40 -25 -10
0
0
10
20
30
40
50
5
20
35
50
65
80
95 110 125
1/RCL – mS
TA – Ambient Temperature – °C
Figure 10. Peak DRV Current vs Transconductance (1/RCL)
Figure 11. Peak DRV Current vs Ambient Temperature
4.3
6
4.2
tMOT – Maximum On-Time – ms
tMOT – Maximum On-Time – ms
5
4
3
2
MODE
Latch Off
Shutdown/Retry
1
0
100
200
300
400
500
RMOT = 383 kW
4.1
4.0
3.9
3.8
3.7
3.6
3.5
3.4
0
600
3.3
-40 -25 -10
5
20
35
50
65
80
95 110 125
TJ – Junction Temperature – °C
RMOT – Maximum On-Time Resistor – kW
Figure 12. Maximum On Time vs Maximum On-Time
Resistance
10
TA = 125°C
Figure 13. Maximum On Time vs Junction Temperature
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Typical Characteristics (continued)
Unless otherwise stated: VDD = 12 V, VGG = 12 V, ZCD = 1 V, IFB = 10 µA, GND = 0 V, a 0.1-μF capacitor between VDD
and GND, a 0.1-μF capacitor between VGG and GND, RCL = 33.2 kΩ, RMOT = 380 kΩ, –40°C < TA < +125°C, TJ = TA
180
12
RDS(on) – On-Time Resistance – W
RDS(on) – On-Time Resistance – mW
160
140
120
100
80
60
8
6
4
2
40
20
-40 -25 -10
5
20
35
50
65
80
High-Side Drive
VDD Switch
10
0
-40 -25 -10
95 110 125
5
20
35
50
65
80
95 110 125
TA – Ambient Temperature – °C
TA – Ambient Temperature – °C
Figure 14. Driver RDS(on) vs Ambient Temperature
Figure 15. RDS(on) of High Side Drive and VDD Switch vs
Temperature
60
2.0
qJB – Thermal Coefficient – °C/W
PDISS – Power Dissipation – W
2.5
1.5
1.0
0.5
0
-40
Package
SOIC (D)
DIP (P)
50
40
30
20
Package
SOIC (D)
DIP (P)
10
0.0
-20
0
20
40
60
80
100
0
120
0.25
0.50
0.75
1.00
TB – Board Temperature – °C
PDISS – Power Dissipation – W
Figure 16. Safe Operating Area vs Board Temperature
Figure 17. Thermal Coefficient – θJB vs Power Dissipation
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7 Detailed Description
7.1 Overview
The flyback converter is attractive for low power AC/DC applications because it provides output isolation and
wide input operating abilities using a minimum number of components. Operation of the flyback converter in
Discontinuous Conduction Mode (DCM) is especially attractive because it eliminates reverse recovery losses in
the output rectifier and it simplifies control.
The UCC28610 is a flyback controller for 12-W to 65-W, peak AC/DC power supply applications that require both
low AC line power during no-load operation and high average efficiency. This controller limits the converter to
DCM operation. It does not allow Continuous Conduction Mode (CCM) operation. Forced DCM operation results
in a uniquely safe current limit characteristic that is insensitive to AC line variations. The peak current mode
modulator does not need slope compensation because the converter operates in DCM.
The operation of the UCC28610 is facilitated by driving the external high voltage MOSFET through the source.
This configuration is called a cascode driver. It features fast start-up and low input power under no-load
conditions without having high voltage connections to the control device. The cascode driver has no effect on the
general operation of the flyback converter.
The feedback pin uses current rather than voltage. This unique feature minimizes primary side power
consumption during no-load operation by avoiding external resistive conversion from opto-coupler current to
voltage.
Average efficiency is optimized by the UCC28610 between peak power and 22% peak power with constant peak
current, variable off-time modulation. This modulation tends to make the efficiency constant between 22% and
100% peak load, eliminating the need to over-design to meet average efficiency levels that are required by
EnergyStar™.
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7.2 Functional Block Diagram
Fault Latch
Reset
13V
+
VGG
LDO
Reg
VDD
Switch
+
5
10V/6V
VDD
VGG
Shunt
8
14V
HS
Drive
UVLO
+
VGG
2V
10V/8V
Enable
PWM
IFB
FB
1
IFB
IFB
Feedback
Processing
0?A < IFB < 210?A
IFB > 210?A
ZCD
Green -mode
IFB
Enable
PWM
Overload
D
Zero Current
Detect
2
Q
V GATE
Driver
R
7.5k?
Bulk
Discharge
OV
Fault
Output
Voltage
Sense
DRV
1/t S
Modulators
IFB = 0
6
Freq. Modulator
tS
7
GND
3
CL
5V
Maximum On Time
& Fault Response
Control
IFB
Fault Timing&
Control
IMOT
VGATE
+
Latch
or
Retry
3V
1V
MOT
Shutdown
and
Restart
Current
Modulator
Fault
IP
Fault Latch
Reset
IFB
UVLO
4
Thermal
Shutdown
UCC28610
Block Diagram
7.3 Feature Description
7.3.1 Fault Recovery
The UCC28610 reacts with the programmed overload response if the overload lasts longer than tOL (nominally
250 ms). The overload fault responses are either (1) latch-off or (2) shutdown/retry after a retry delay of 750 ms.
The overload response is programmed with the MOT pin. The forced DCM feature prevents transformer
saturation and limits the average and RMS output currents of the secondary winding of the transformer. Even
under short circuit load conditions, the output current of the transformer is limited to the levels that are shown in
Equation 1, where NPS is the primary-to-secondary turns ratio. Typical behavior for a shorted load is shown in
Figure 18.
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Feature Description (continued)
ISECONDARY ,AVG (SHORTEDLOAD ) =
ISECONDARY ,RMS (SHORTEDLOAD ) =
NPS ´ IDRV ( PEAK )
2
NPS ´ IDRV ( PEAK )
3
(1)
In shutdown/retry mode switching will be re-enabled after the 750-ms retry delay. In latch-off mode, a 7.5-kΩ load
is activated at the DRV pin upon the activation by a fault condition. The internal 7.5-kΩ load draws current from
the bulk capacitor through the HVMOSFET and the transformer primary winding. The bias voltage, VDD, is also
regulated by the HVMOSFET during the latch-off state. Once the AC line is removed, a 2.8-mA current,
IDRV,DSCH, will discharge the bulk capacitor. Ultimately, VDD will discharge when the bulk voltage becomes
sufficiently low. A normal start-up cycle can occur if the input voltage is applied after VDD falls below the fault
reset level, VDD(FAULT RESET), which is approximately equal to 6 V.
tOL = 250ms
50
300
Figure 18. Overload Behavior with a Shorted Output
7.3.2 Maximum On-Time and Brown Out
The forced DCM feature provides protection against excessive primary currents in the event that the input
voltage becomes very low. The highest possible secondary currents can be described by Equation 1. The
UCC28610 adds further protection by allowing the user to program the maximum on-time.
The Maximum On-Time (MOT) function causes the converter to react as if there is an overload condition if the
load is sufficiently large during a line sag condition. During low line conditions the MOT function limits the on-time
of the primary switch which limits the peak current in the primary power stage. Figure 19 shows how the MOT
period, tMOT, is programmed over the range of 1.5 μs to 5 μs for either range of programming resistors. The
resistor range determines the controller’s response to a sustained overload fault – to either Latch-off or to
Shutdown/Retry, which is the same response for a line-sag, or brown out, condition.
7.3.3 External Shutdown Using the MOT Pin
Many applications require the ability to shutdown the power supply with external means. This feature is easily
implemented by connecting the collector and emitter of an NPN transistor between MOT and GND, respectively.
The NPN transistor can be the photo-transistor of an opto-isolator for isolated applications.
14
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Feature Description (continued)
t MOT
k
RMOT
k
k
k
Figure 19. Programming MOT and Overload Fault Response
For latch-off response to over-current or brownout:
Wö
æ
RMOT = tMOT ´ ç 1´ 1011 ÷
sø
è
(2)
where:
150 kW £ RMOT £ 500 kW
1.5 m s £ tMOT £ 5 m s
(3)
For shut-down/retry response to over-current or brownout:
Wö
æ
RMOT = tMOT ´ ç 2 ´ 1010 ÷
sø
è
(4)
where:
25 k W £ R MOT £ 100 k W
1.5 m s £ t MOT £ 5 m s
(5)
7.3.4 Overvoltage Detection
The UCC28610 controller monitors the output voltage by sampling the voltage at the auxiliary winding. The
sampling time has a fixed delay of 1 μs, tBLANK,OVP, after the internal driver turns off. This allows the auxiliary
winding to be sampled after the bias winding voltage settles from the transient. This same delay is used to blank
the ZCD input to avoid unintended zero crossing detection should the ringing be large enough to cross the ZCD
zero crossing threshold.
The output over-voltage (OV) threshold is set using the turn ratio of the auxiliary winding to the output secondary
and a resistive divider into the ZCD input pin. The UCC28610 will always enter a latched-off state if it detects an
OV condition. The VDD supply must cycle below the fault reset threshold to re-start in order to recover. The
functionality of the over-voltage detection function is shown in Figure 20.
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Feature Description (continued)
Figure 20. Output Over-Voltage Protection with ZCD Pin
7.3.5 Solving for High Frequency Ringing
Cascode drive circuits are well known for high speed voltage gain. This topology can have small signal
bandwidth well over 100 MHz and it can exhibit high frequency ringing. The internal HS Drive MOSFET shorts
the gate to source of the external HVMOSFET during the turn-off interval of the switch cycle. This prevents the
HVMOSFET from undesirably exciting the LC resonant circuit in the converter (the magnetizing inductance of the
transformer and the stray drain capacitance). High frequency ringing can appear within the built-in dead-time
between the turn-off of DRV and the turn-on of the HS Drive. A large amount of energy is transferred through the
power components during this dead-time. Excessive high frequency ringing can cause EMI problems and
become destructive in some situations.
7.3.5.1 Identification of High Frequency Ringing
The high frequency ringing is the result of stray capacitances ringing with the stray inductance between the
source of the HVMOSFET and the DRV pin. Low threshold voltage of the high voltage MOSFET and large peak
DRV current can make the ringing worse. In destructive ringing situations, the converter may easily power up and
attain regulation the first time, never to start-up again.
The ringing can be observed in either or both of the following conditions:
• The very first HVMOSFET turn-off event during a cold start of the converter (VGG > VDD).
• HVMOSFET turn-off edge under steady state, where the converter switches the HVMOSFET at the
programmed IDRV,PK level (VDD > VGG).
7.3.5.2 Avoid HF Ringing
High frequency ringing problems with cascode MOSFET drives can often be avoided. Many converters will not
have this problem because they use an HVMOSFET with a large Vth, large RDS(on), low transconductance gain, or
operate at low current. Ringing problems can also be avoided by minimizing stray inductance. The trace between
the HVMOSFET source and the DRV pin must be kept very short, less than 1 cm. Do not add current probe
loops to the source lead of the HVMOSFET. Do not place ferrite beads on the source lead of the HVMOSFET.
If ringing cannot be avoided, the most efficient and effective methods to solve ringing during switching transients
are:
1. A ferrite chip or bead connected to the gate of the HVMOSFET,
2. A small capacitor connected from DRV to GND and
3. A gate turn-off resistor. These three techniques can be used separately or combined, as shown in Figure 21.
16
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Feature Description (continued)
Bulk Voltage
Bulk Voltage
Primary
DG
VGG
Bulk Voltage
DG
R G-ON
UCC28610
Primary
DG
RG-ON
Ferrite chip
or bead
UCC28610
DRV
Primary
RG-OFF
RG-ON
UCC28610
VGG
VGG
DRV
DRV
CDRV
GND
GND
(a)
GND
(b)
(c)
Figure 21. High Frequency Ringing Solutions, (a) ferrite chip, (b) CDRV and (c) RG-OFF
7.3.5.3 Ferrite Chip or Bead Solution
The ferrite chip or bead connected to the gate of the HVMOSFET provides the best result because it suppresses
ringing in the gate, source, and drain circuits of the HVMOSFET with minimal added losses. Select the ferrite
chip for its resistance value in the ringing frequency range (for example, 60 Ω at 100 MHz). The peak current
rating of the ferrite chip or bead must be sufficient for the drain – gate discharge current that occurs during the
turn-off transient. Excessively large bead reactance can result in low frequency surges of VGG at peak load.
Normally, good results can be achieved with a 0603 ferrite chip device.
7.3.5.4 DRV Capacitor Solution
A capacitor between DRV and GND can reduce ringing on VGG. Select the DRV capacitor experimentally by
observing the effect on the VGG pin during the first turn-off edge and during the turn-off edge at full load
operation. The capacitor should be less than 3.3 nF so that it does not significantly reduce efficiency. Use a
capacitor with a low Q, such as one with Y5V dielectric. This technique will not completely damp the ringing yet it
can provide sufficient protection against stray inductance between the source of the HVMOSFET and the DRV
pin.
7.3.5.5 Gate Turn-Off Resistor Solution
A gate turn-off resistor in the range 0 Ω < RG-OFF < 5 Ω can damp ringing. The turn-off resistance is limited in
order to prevent the stray source inductance of the HVMOSFET from over charging VGG through the body diode
of the HS Drive MOSFET, in addition to any peak current error problems that would be caused by additional
delay. The damping effect of the gate resistor works better in applications with low current and small source
inductance.
A much larger resistance can be tolerated during the HVMOSFET turn-on transition due to DCM operation. The
recommended turn-on resistance range is 0 Ω 210uA
IFB = 0A
RFBfilter
1
FB
CFBfilter
RFB
Figure 26. FB Details
fFB =
1
2 ´ p ´ RFBfilter ´ CFBfilter
(16)
8.1.4 Modulation Modes
Under normal operating conditions, the FB current commands the operating mode of the UCC28610, as shown
in Figure 27 and Figure 28. The FB current commands the UCC28610 to operate the converter in one of three
modes: Frequency Modulation (FM) mode, Amplitude Modulation (AM) mode, and Green Mode (GM).
The converter operates in FM mode with a large power load (22% to 100% the peak regulated power). The peak
HVMOSFET current reaches its maximum programmed value and FB current regulates the output voltage by
varying the switching frequency, which is inversely proportional to tS. The switching frequency is modulated from
30 kHz (22% peak power) to 133 kHz (100% peak power), the on time is constant, and the IDRV peak current is
constant. The maximum programmable HVMOSFET current, IDRV,PK(max), is set by a resistor on the CL pin, as
described in Equation 15.
The converter operates in AM mode at moderate power levels (2.5% to 22% of the peak regulated power). The
FB current regulates the output voltage by modulating the amplitude of the peak HVMOSFET current from 33%
to 100% of the maximum programmed value while the switching frequency is fixed at approximately 30 kHz. The
UCC28610 modulates the voltage on the CL pin from 3 V to 1 V to vary the commanded peak current, as shown
in Figure 27 and Figure 28.
The converter operates in GM at light load (0% to 2.5% of the peak regulated power). The FB current regulates
the output voltage in the Green Mode with hysteretic bursts of pulses using FB current thresholds. The peak
HVMOSFET current is 33% of the maximum programmed value. The switching frequency within a burst of pulses
is approximately 30 kHz. The duration between bursts is regulated by the power supply control dynamics and the
FB hysteresis. The UCC28610 reduces internal bias power between bursts in order to conserve energy during
light-load and no-load conditions.
24
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Application Information (continued)
IFB
Current Modulator
Peak
Current
Control
3
R CL
IFB
Freq. Modulator
1/tS
TSW
VGATE
IFB
Figure 27. Modulation Control Blocks
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IDRV,PK - Percent of Maximum Peak DRV Current - %
Application Information (continued)
AM
FM
IFB,CNR1
(165mA)
100
GM
I FB,CNR2
(210mA)
IFB,CNR3
(280mA)
IFB,CNR3 - IFB,CNR2
(70mA)
33
133
IFB,CNR2 - IFB,CNR1
fS - Switching Frequency kHz
(45mA)
IGM,HYST
(25mA)
30
0
50
100
150
200
250
300
I FB - Feedback Current - μA
Figure 28. Control Diagram with Operating Modes
8.1.5 Primary Current Sense
The UCC28610 uses a current mirror technique to sense primary current in the Current Modulator. See Figure 29
for details. All of the primary current passes into the DRV pin, through the Driver MOSFET and out of the GND
pin. The Driver MOSFET current is scaled and reflected to the PWM Comparator where it is compared with the
CL current. At the beginning of each switching cycle a blanking pulse, tBLANK,(Ilim), of approximately 220 ns is
applied to the internal current limiter to allow the driver to turn on without false limiting on the leading edge
capacitive discharge currents normally present in the circuit.
26
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Application Information (continued)
Current Modulator
Peak
Current
Control
CL
IFB
IFB
ICL
1
3
FB
From Emitter
of OptoCoupler
IFB
RCL
ICL
IDRV
IDRV
100000
6
DRV From Source
of
HVMOSFET
PWM
Comparator
PWM FlipFlop CLR
Driver
GND
7
t BLANK,(Ilim)
Figure 29. CL pin and DRV Current Sense
8.1.6 Zero Crossing Detection
The modulator requires three conditions in order to initiate the next switching cycle:
1. The time since the last turn-on edge must be equal to or greater than the time that is requested by the
Feedback Processor as determined by the feedback current, IFB.
2. The time since the last turn-on edge must be longer than the minimum period that is built into the UCC28610
(nominally 7.5 μs which equals 133 kHz).
3. Immediately following a high-to-low zero crossing of the ZCD voltage. Or, it has been longer than tWAIT,ZCD
(~2.4 μs) since the last zero crossing has been detected.
Every switching cycle is preceded by at least one zero crossing detection by the ZCD pin. The modulator allows
the resonant ring to damp between pulses if the period needs to exceed the damping limit, allowing long pauses
between pulses during no-load operation.
The switching frequency is not allowed to exceed 133 kHz (nominally). This sets the maximum power limit so
that it will be constant for all bulk voltages that exceed the minimum line voltage value.
Figure 30 illustrates a set of switching cycle waveforms over a range of operating conditions. The UCC28610 is
designed to always keep the inductor current discontinuous. This prevents current tailing during start-up or short
circuit conditions and accommodates control of the maximum power delivered.
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Application Information (continued)
Figure 30. Switching Cycle Waveforms
Zero crossing is detected using a resistive divider across the bias winding, as shown in Figure 31. The bias
winding operates in phase with the output winding. The ZCD function detects transformer demagnetization when
the ZCD voltage has a high to low crossing of the 20-mV ZCD threshold, ZCDTH. The voltage at the ZCD pin is
internally clamped to contain negative excursions at -160mV (ZCDCLAMP). A small delay, 50 ns to 200 ns, can be
added with CZCD to align the turn-on of the primary switch with the resonant valley of the primary winding
waveform.
NP
NS
NB
RZ CD 1
ZCD
R ZC D 2
2
Zero
Current
Detect
PWM
Flip-Flop
CZ C D
OV
Fault
Output
Voltage
Sense
Fault Timing
and Control
5V
Figure 31. Zero Crossing Detection
28
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Application Information (continued)
VOUT + VF
N
´ B
100 m A
NS
R ZCD1 =
(17)
ZCD(ovp) ´ R ZCD1
R ZCD2 =
æ
NB ö
ç VOUT(pk) ×
÷ -ZCD(ovp)
NS ø
è
(18)
8.1.7 Green Mode Operation
During light load operation the UCC28610 cycles between two states: GM-on and GM-off. The details are shown
in Figure 32. During the GM-on state, the controller is active while the modulator issues a burst of one or more
pulses. During the GM-off state the controller reduces its operating current and switching action is inhibited. The
rate and duration of the on and off states are controlled by the current into the FB pin as it cycles between the
two hysteretic thresholds separated by IFB, GM_HYST, the load current, the output filter capacitor, and the details of
the feedback circuit.
During the GM-off state the VDD supply current is reduced to approximately 550 μA, IVDD(GM). The Enable PWM
signal goes low which inhibits switching, sets the VGG shunt regulation to ~16 V, VGG(DISABLED), and turns on the
VDD switch. The VGG node quickly charges to 16V and the low VDD current is supplied from the VDD capacitor.
During the GM-on state the UCC28610 controls the peak primary current to 33% of IDRV,PK(max), at a 30-kHz rate.
When switching, the VGG shunt regulator pulls the VGG voltage down to ~14 V. VDD is charged by the auxiliary
winding during this time as long as VDD does not discharge below 14 V. The converter’s output voltage is
charged until the feedback network forces the FB current to the GM off threshold, IFB,CNR3, and puts the controller
back into the GM off state.
At very light loads the time between PWM bursts can be long. To obtain the lowest no-load power, it is important
that VDD not discharge below 16 V by more than the threshold voltage of the HVMOSFET or the HVMOSFET
will turn-on and linearly supply the VDD current from the high-voltage bulk rail. The VDD voltage can be
extended by increasing the CVDD capacitance without significant impact on start-up time.
VGG
16
15
14
13
12
VDD
VGG
V OUT
12.1
12.0
11.9
11.8
VOUT
% IDRV, PK(MAX)
100
67
I(DRV)
33
0
250
260
270
Time (ms)
280
290
Figure 32. Green Mode Operation
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Application Information (continued)
8.1.8 Maximum Converter Power Limitation
The suggested peak power range of the UCC28610 is 12 W to 65 W based on a universal AC line converter (90VAC to 265-VAC input line voltage), using an external high voltage MOSFET with a voltage rating of 600 V. This
power range may depend on application and external MOSFET stress voltage. Ultimately, the peak primary
current is the limiting factor because this current must pass through the UCC28610. The limit on the peak
primary current imposes a limit on the peak primary power. The peak power must be less than 65 W, not the
average power. The peak power is defined as the highest power level where the controller must maintain
regulation.
At all power levels, program the UCC28610 to control the power limit with the primary inductance, peak current
and maximum switching frequency (133 kHz). The maximum peak input power level is given by Equation 19. The
accuracy of the power limit is twice as sensitive to IDRV(PK) errors than LM errors and fS(max) errors. If the load
demands more power than the programmed level, the power supply output voltage sags and the overload timer
is initiated.
PIN(max) =
Lm ´ IDRV(pk)2 ´ fS(max)
2
(19)
8.1.9 Minimum Converter Power Limitation
The dynamics of the DRV current sense imposes the 12-W minimum power level limit for this controller. The
power level limits are found from DRV current estimates for typical universal AC adapters that use a 600-V
MOSFET. The power range and its associated peak current range are given in Equation 20.
PIN ³ 12W
I DRV ,PK (min) ³ 1A
(20)
The minimum power level is due to a loss of linearity of the current mirror, as shown in Figure 33. A programmed
IDRV,PK level between 0.66 A and 1 A (by using 100 kΩ ≤ RCL ≤ 150 kΩ) allows only a 2:1 amplitude modulation
range of the peak DRV current. The amplitude of IDRV modulates linearly if IDRV,PK is programmed within its
recommended operating range (1.0 A < IDRV,PK < 4.1 A, corresponding to 100 kΩ > RCL > 24.3 kΩ respectively.
5
IDRV(pk) – Peak DRV Current – A
Best Results
24.3 kW < RCL< 100 kW
4
3
2
1
Avoid Operation Here
0
0
10
20
30
40
50
1/RCL – mS
Figure 33. Dynamic Operating Range
30
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8.2 Typical Application
CBULK
VIN
AC
NP
RSTART
+
NS
VOUT
-
CVGG
Q1
NB
UCC28610
RMOT
MOT VGG
RCL
CL
DRV
ZCD
GND
RZCD2
D1
RFB
CBP
FB
VDD
CVDD
RZCD1
DBIAS
Figure 34. Recommended Operating Conditions Application
8.2.1 Design Requirements
Table 1 illustrates a typical subset of high-level design requirements. Many of these parameter values are used
in the design equations contained in Table 2.
Table 1. UCC28610EVM-474 Electrical Performance Specifications
PARAMETER
CONDITIONS
MIN
NOM
MAX
UNIT
265
VRMS
INPUT CHARACTERISTICS
VIN
Input voltage
85
OUTPUT CHARACTERISTICS
VOUT
Output voltage
VIN = min to max, IOUT = min to max
Vripple
Output voltage ripple
VIN = 115 VRMS, IOUT = max
IOUT
Output current
VIN = min to max
IOCP
Output over current
inception point
VIN = max
VOVP
Output OVP
IOUT = min to max
Transient response
voltage over shoot
IOUT = min to max
10.8
12
13.2
V
80
120
mVpp
2.1
A
0
3
A
16
500
V
mV
SYSTEM CHARACTERISTICS
hPEAK
Peak efficiency
VIN = 115 VRMS, IOUT = 1.05 A
No load power
consumption
VIN = 115 VRMS
85.7%
67
VIN = 230 VRMS
107
mW
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For reference designators refer to Figure 34.
8.2.2 Detailed Design Procedure
Table 2. Pin Components (1) (2)
NAME
PIN
DESCRIPTION
R CL = 33.2k W ´
CL
IDRV(PK) =
3
K P ´ LM
PIN
100 kV
RCL
Where KP = 0.54W/ μH
LM is the minimum value of the primary inductance
PIN = POUT/η
η = efficiency
Q1, power MOSFET with adequate voltage and current ratings, VVGS must have at least 20-V static rating.
DRV
6
FB
1
RFB = 100 kΩ
GND
7
Bypass capacitor to VDD, CBP = 0.1-μF, ceramic
D1, Schottky diode, rated for at least 30 V, placed between DRV and VDD
For latch-off response to overcurrent faults:
tMOT = user programmable maximum on-time after 250-ms delay.
Wö
æ
R MOT = t MOT ´ ç 1 ´ 1011
s ÷ø
è
MOT
4
where
•
150 kΩ ≤ RMOT ≤ 500 kΩ
For shutdown-retry response to overcurrent faults:
Wö
æ
RMOT = tMOT ´ ç 2 ´ 1010 ÷
sø
è
•
25 kΩ ≤ RMOT ≤ 100 kΩ and tMOT ≤ 5 μs
CVDD =
IVDD(GM) ´ tBURST
DVDD(BURST )
where:
ΔVDD(BURST) is the allowed VDD ripple during burst operation
tBURST is the estimated burst period,
VDD
8
The typical CVDD value is approximately 47 μF
DBIAS must have a voltage rating greater than:
VDBIAS ³ VOUT
NPS VBULK (max )
+
NPB
NPB
where:
VDBIAS is the reverse voltage rating of diode D2
VBULK(max) is the maximum rectified voltage of CBULK at the highest line voltage
(1)
(2)
32
Refer to the Electrical Characteristics table for all constants and measured values, unless otherwise noted.
Refer to Figure 34 for all component locations in the Table 2.
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Table 2. Pin Components(1)(2) (continued)
NAME
PIN
DESCRIPTION
minimize the length of the CVGG connection to GND
VGG
5
CVGG = at least 10x CGS of HVMOSFET, usually
CVGG = 0.1 μF.
R ZCD1 =
R ZCD2 =
ZCD
2
VOUT + VF NPS
´
100 m A
NPB
ZCD(ovp) ´ R ZCD1
æ
NPS
ç VOUT(pk) ×
NPB
è
ö
÷ -ZCD(ovp)
ø
where:
ZCD(ovp) is the overvoltage fault threshold at ZCD
NPS is the primary to secondary turns ratio
NPB is the primary to bias turns ratio
VOUT is the average output voltage of the secondary
VF is the forward bias voltage of the secondary rectifier
VOUT,PEAK is the desired output overvoltage fault level
8.2.2.1 Input Bulk Capacitance and Minimum Bulk Voltage
Bulk capacitance may consist of one or more capacitors connected in parallel. The input power of the converter
based on target full-load efficiency, minimum input RMS voltage, minimum AC input frequency, and minimum
bulk capacitor voltage are used to determine the bulk capacitor value. Maximum input power is used in the CBULK
calculation and is determined by:
Pin(max) = VOUT x IOUT
η
(21)
Assume 30% voltage ripple on the bulk capacitor, the minimum bulk capacitor voltage is 70% of the minimum
input AC voltage at its peak value.
VBULK(min)= 0.7 x 2 x Vin(min)
(22)
Equation 23 provides an accurate solution for input capacitance needed to achieve a minimum bulk valley
voltage target VBULK(min), accounting for hold-up during any loss of AC power for a certain number of half cycles,
NHC, by an AC-line drop-out condition. Alternatively, if a given input capacitance value is prescribed, iterate the
VBULK(min) value until that target capacitance is obtained, which determines the VBULK(min) expected for that
capacitance.
CBULK≥
2Pin(max) x 0.25 + 0.5NHC + 1 x arcsin
2π
2
VBULK(min)
2 x Vin(min)
2
(2V IN(min) - V BULK(min)) x fLINE(min)
(23)
8.2.2.2 Transformer Selection
To begin a power supply design, the power supply designer needs to know the peak power to be delivered by
the converter, the input voltage range, the output voltage, and an estimate of the maximum allowable bulk
voltage ripple. Select the maximum allowable stress voltage for the external power MOSFET. The stress voltage,
VDS, determines the reflected secondary voltage that resets the flyback transformer and the turn ratio between
primary and secondary. A simplified diagram of the converter and its waveforms are shown in Figure 22.
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NPS
Figure 35. Basic Flyback Converter and Waveforms at Peak Load and Minimum VBULK Voltage
Peak power is the maximum power level that must be regulated by the converter control system. Loads that last
longer than the control loop time constant (100 μs - 300 μs) are directly considered “peak power”. Loads lasting
less than the control loop time constant can be averaged over the control loop time constant.
The minimum switching period is when the converter is operating in the Frequency Modulation (FM) mode,
referred to as tS(HF). This switching period must equal the sum of the switching intervals at minimum input
voltage, maximum load, as shown in Figure 35 and described in Equation 24. The switching intervals are tON, the
conduction time of the MOSFET; tDM the demagnetization time of the transformer and tDT, the duration of the
deadtime, equal to half of the resonant cycle, after the transformer is de-energized.
tS( HF ) = tON + tDM + tDT
(24)
Solve for the primary to secondary turn ratio, NPS, using the maximum allowable VDS, the maximum input line
voltage, the predicted voltage spike due to leakage inductance and the desired regulated output voltage of the
converter, VOUT.
NPS =
VDS - 2 VIN(max) - Vleakage_spike
VOUT
(25)
Assume a deadtime, tDT, of 5% of the total minimum switching period to allow for variations in the output
capacitance of the HVMOSFET and the leakage inductance value:
tDT = 0.05 ´ tS( HF )
(26)
Using volt-seconds balance, set the volt-seconds on equal to the volt-seconds for demagnetizing and solve for
the on-time:
VBULK (min) ´ tON = VOUT ´ NPS ´ tDM
(27)
tDM = tS( HF ) - tON - tDT
34
(28)
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tON =
VOUT ´ NPS ´ ( tS( HF ) - tDT )
VBULK (min) + (VOUT ´ NPS )
(29)
The maximum input power, PIN, to the converter, in addition to being equal to the output power divided by the
overall efficiency, is always equal to:
2
(VBULK(min) ´ tON )
POUT
PIN =
=
efficiency
2 ´ LM ´ t S(HF)
(30)
Solve for the primary inductance value:
LM
(V
=
2
BULK (min)
´ tON )
2 ´ PIN ´ tS( HF )
(31)
This equation is an approximation of the primary inductance value that is the best choice to minimize the primary
side RMS current. In the actual circuit, when the resonance and delay due to leakage inductance can be
measured, the magnetizing inductance value may need to be iterated for optimized low voltage switching.
Select the CL resistor, RCL, based upon the maximum power constant of the controller, KP, The tolerance of LM
should be considered (such as 10% lower for a typical inductor) and the minimum value of LM should be used to
calculate the value of the CL resistor.
To avoid tripping the overload protection feature of the controller during the normal operating range, use the
minimum value of KP from the Electrical Characteristics Table:
RCL = 33.2kW ´
K P ´ LM
PIN
(32)
Once RCL is selected, the peak DRV current is calculated using Equation 10:
IDRV(PK ) =
100kV
RCL
(33)
For high efficiency, the bias winding turn ratio, NPB, should be designed to maintain the VDD voltage above the
VGG clamp, which is equal to VGG(DISABLED), when the converter is in burst mode. If VDD discharges below this
value, minus the threshold voltage of the HVMOSFET, the HVMOSFET will turn on and linearly supply the VDD
current from the high voltage rail instead of from the bias windings. Adding a zener diode on VDD will protect
VDD from exceeding its absolute maximum rating in the event of a spike due to excess leakage inductance.
8.2.2.3 Feedback Function
Modulation and modes are controlled by applying current to the FB pin. The FB pin is usually used to feed back
the output error signal to the modulator. The UCC28610 uses internal current mirrors to apply the FB current to
the Feedback Processing block, and then to the Frequency Modulator and Current Modulator blocks. The voltage
of the FB pin is a constant 0.7 V. AC filtering of the output of the opto-coupler must be applied at the FB pin, as
shown in Figure 36. The corner frequency of the filter in Figure 36 should be at least a decade above the
maximum switching frequency of the converter, as given in Equation 34. A 100-kΩ resistor, RFB, between the
opto-coupler emitter and GND prevents ground noise from resetting the overload timer by biasing the FB pin with
a negative current. An opto-coupler with a low Current Transfer Ratio (CTR) is required to give better no-load
performance than a high CTR device due to the bias current of the secondary reference. The low CTR also
offers better noise immunity than a high CTR device.
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VDD
IFB
FeedBack Processing
To Modulators
GM
OverLoad
I FB
RFBfilter
1
0uA < I FB < 210uA
IFB > 210uA
IFB = 0A
FB
CFBfilter
RFB
Figure 36. FB Details
fFB =
1
2 ´ p ´ RFBfilter ´ CFBfilter
(34)
Zero crossing is detected using a resistive divider across the bias winding, as shown in Figure 37. The bias
winding operates in phase with the output winding. The ZCD function detects transformer demagnetization when
the ZCD voltage has a high to low crossing of the 20-mV ZCD threshold, ZCDTH. The voltage at the ZCD pin is
internally clamped to contain negative excursions at -160mV (ZCDCLAMP). A small delay, 50 ns to 200 ns, can be
added with CZCD to align the turn-on of the primary switch with the resonant valley of the primary winding
waveform.
NP
NS
NB
RZ CD 1
ZCD
R ZC D 2
2
Zero
Current
Detect
PWM
Flip-Flop
CZ C D
OV
Fault
Output
Voltage
Sense
Fault Timing
and Control
5V
Figure 37. Zero Crossing Detection
R ZCD1 =
R ZCD2 =
36
VOUT + VF
N
´ B
100 m A
NS
(35)
ZCD(ovp) ´ R ZCD1
æ
NB
ç VOUT(pk) ×
N
S
è
ö
÷ -ZCD(ovp)
ø
(36)
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8.2.3 Application Curves
No-Load Power Consumption vs. Line Voltage
0.870
140
0.860
120
0.850
100
265Vac
230Vac
85VAC
0.840
115VAC
230VAC
0.830
264VAC
0.820
In p u t P o w e r ( m W )
E F F IC IE N C Y
EFFICIENCY vs. LOAD CURRENT
80
115Vac
60
85Vac
40
0.810
20
0.800
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
80
100
LOAD (A)
120
140
160
180
200
220
240
260
280
Line Voltage (Vac)
Figure 38. Efficiency as a Function of Load Current and
Input Voltage
Figure 39. No-Load Input Power as a Function of Input
Voltage
OUTPUT VOLTAGEvs LOAD CURRENT
O UTPUT VO LTAG E (V)
12.8
12.3
85Vac
115Vac
230Vac
11.8
265Vac
11.3
10.8
0
0.5
1
1.5
2
2.5
3
LOAD CURRENT (A)
Note the Shutdown/Retry Threshold for Each Line Voltage
Figure 40. Output Voltage as a Function of Load Current
and Line Voltage
Input voltage = VAC, Full Load, fSW = 112 kHz. Ch.1 = IDRV, 500
mA/div., IDRV = 1.53 A, Ch. 2 = Drain of HV MOSFET, 100 V/div.,
Ch.3 = ZCD, 5V/div.
Figure 41. FM Mode Switching Cycle Waveform
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(Input voltage = 85 VAC , 0.3-A load, fSW = 28.2 kHz, Ch.1 = IDRV, 500 mA/div., IDRV = 1.1 A, Ch.2 = Drain of HV MOSFET, 100 V/div.,
Ch.3 = ZCD, 5 V/div., Ch. 4 = VDD, 10 V/div.)
Figure 42. AM Mode Switching Cycle Waveform
38
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9 Power Supply Recommendations
The UCC28610 VDD can be charged through high-voltage MOSFET directly from the high-voltage bus at
startup. Due to the nature of high loss, this charging path is intended for startup operation only. During normal
operation, the VDD voltage should be high enough to avoid this high-loss charging path.
In order to achieve the lowest possible no-load power, select the number of turns in the bias winding so that VDD
is higher than 16V-VTH of the high voltage MOSFET. A bias winding voltage between 17 V and 20 V usually
achieves minimum loss. The bias winding often tracks the primary leakage inductance turn-off voltage spike.
Place a 20-V Zener diode between VDD and GND in applications where the heavy loads cause excessive VDD
voltage.
10 Layout
10.1 Layout Guidelines
It is possible to design a power supply on a single layer board using the UCC28610. Figure 43 and Figure 44
show an example of a typical layout and design, respectively. Proper use of ground planes can solve EMI and
thermal problems. For best results, create a quiet ground plane for the components associated with pins 1
through 4. This offers shielding for the control signals. Also, do not extend the ground plane under heat sinks,
thermistors or snubbers so that these components do not heat the UCC28610.
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10.2 Layout Example
Figure 43. Typical Layout of the Device on a Single Layer PCB
NOTE
The reference designators correspond to the components shown in the schematic of
Figure 44.
40
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+
+
+
+
Figure 44. Typical Design Schematic
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11 Device and Documentation Support
11.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
42
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PACKAGE MATERIALS INFORMATION
www.ti.com
28-Sep-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
B0 W
Reel
Diameter
Cavity
A0
B0
K0
W
P1
A0
Dimension designed to accommodate the component width
Dimension designed to accommodate the component length
Dimension designed to accommodate the component thickness
Overall width of the carrier tape
Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
UCC28610DR
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
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28-Sep-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
W
L
H
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
UCC28610DR
SOIC
D
8
2500
340.5
336.1
25.0
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
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28-Sep-2022
TUBE
T - Tube
height
L - Tube length
W - Tube
width
B - Alignment groove width
*All dimensions are nominal
Device
Package Name
Package Type
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
UCC28610D
D
SOIC
8
75
507
8
3940
4.32
Pack Materials-Page 3
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
A
.004 [0.1] C
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.150
[3.81]
.189-.197
[4.81-5.00]
NOTE 3
4X (0 -15 )
4
5
B
8X .012-.020
[0.31-0.51]
.010 [0.25]
C A B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 -8
.016-.050
[0.41-1.27]
DETAIL A
(.041)
[1.04]
TYPICAL
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
6X (.050 )
[1.27]
SYMM
5
4
(R.002 ) TYP
[0.05]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
METAL
SOLDER MASK
OPENING
EXPOSED
METAL
.0028 MAX
[0.07]
ALL AROUND
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
EXPOSED
METAL
.0028 MIN
[0.07]
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
6X (.050 )
[1.27]
SYMM
5
4
(R.002 ) TYP
[0.05]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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