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CTLT3410-M621

CTLT3410-M621

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    CTLT3410-M621 - SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS - Central Semiconductor...

  • 数据手册
  • 价格&库存
CTLT3410-M621 数据手册
CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT3410-M621 and CTLT7410-M621 are Low VCE(SAT) transistors in a very small leadless 1x2mm surface mount package, designed for applications where small size, operational efficiency, and low energy consumption are prime requirements. Due to the leadless package design, these devices are capable of dissipating up to 3 times the power of similar devices in comparable sized surface mount packages. MARKING CODES: CTLT3410-M621: CB CTLT7410-M621: CD FEATURES: • • • • • High Operational Efficiency High Power to Footprint Ratio VCE(SAT) @ 1.0A = 250mV TYP High Collector Current Small TLM621 1x2mm Package SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA UNITS V V V A A W °C °C/W TLM621 CASE APPLICATIONS: • • • • DC/DC Converters Switching Circuits LCD Backlighting Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) 40 25 6.0 1.0 1.5 0.9 -65 to +150 139 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TYP SYMBOL TEST CONDITIONS MIN PNP NPN ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100µA 40 BVCEO IC=10mA 25 BVEBO IE=100µA 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 25 VCE(SAT) IC=100mA, IB=10mA 35 40 VCE(SAT) IC=200mA, IB=20mA 75 80 VCE(SAT) IC=500mA, IB=50mA 130 150 VCE(SAT) IC=800mA, IB=80mA 200 220 VCE(SAT) IC=1.0A, IB=100mA 250 275 Notes (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2 MAX 100 100 50 75 150 250 400 450 UNITS nA nA V V V mV mV mV mV mV mV R2 (2-December 2010) CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) TEST CONDITIONS MIN IC=800mA, IB=80mA VCE=1.0V, IC=10mA VCE=1.0V, IC=10mA 100 VCE=1.0V, IC=100mA 100 VCE=1.0V, IC=500mA 100 VCE=1.0V, IC=1.0A 50 VCE=10V, IC=50mA, f=100MHz 100 VCB=10V, IE=0, f=1.0MHz SYMBOL VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob NPN TYP PNP MAX 1.1 0.9 300 UNITS V V 10 15 MHz pF TLM621 CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS (Dimensions in mm) R0 PIN CONFIGURATIONS LEAD CODES: 1) Collector 2) Collector 3) Base 4) Emitter 5) Collector 6) Collector MARKING CODES: CTLT3410-M621: CB CTLT7410-M621: CD * Exposed pad P connects pins 1, 2, 5, and 6. CTLT3410-M621 CTLT7410-M621 R2 (2-December 2010) w w w. c e n t r a l s e m i . c o m
CTLT3410-M621 价格&库存

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