CZT3019_10

CZT3019 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA UNITS V V V A A W °C °C/W 140 80 7.0 1.0 1.5 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=90V IEBO VEB=5.0V BVCBO IC=100μA 140 BVCEO IC=30mA 80 BVEBO IE=100μA 7.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA hFE VCE=10V, IC=0.1mA 50 hFE VCE=10V, IC=10mA 90 hFE VCE=10V, IC=150mA 100 hFE VCE=10V, IC=500mA 50 hFE VCE=10V, IC=1.0A 15 fT VCE=10V, IC=50mA, f=20MHz 100 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz MAX 10 10 0.2 0.5 1.1 UNITS nA nA V V V V V V 300 400 12 60 4.0 MHz pF pF dB R6 (9-November 2010) CZT3019 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R6 (9-November 2010) w w w. c e n t r a l s e m i . c o m