C460XR260-SXX00-A

XT™ Rectangular LEDs CxxxXR230-Sxx00-A Cree’s XT Rectangular LEDs are the next generation of solid-state LEDs that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 150 microns in height and require a low forward voltage. Cree’s XT Rectangular chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications for XT Rectangular LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required. FEATURES • XT Rectangular LED Performance – 460 nm & 470 nm  XR-18™ – 18.0 mW min.  XR-21™ – 21.0 mW min. Thin 150 µm Chip Low Forward Voltage – 3.2 Typical at 20 mA Single Wire Bond Structure Class 2 ESD Rating APPLICATIONS • • Mobile Appliance LCD Backlighting Digital Camera Flash • • • • CxxxXR230-Sxx00-A Chip Diagram Top View G•SiC LED Chip 230 x 380 μm Bottom View Die Cross Section PR3CZ Rev. Datasheet: C Gold Bond Pad 105 μm Diameter Backside Metalization Cathode (-) SiC Substrate t = 150 µm Anode (+) Subject to change without notice. www.cree.com  Maximum Ratings at TA = 25°C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Note 2 CxxxXR230-Sxx00-A 30 mA 100 mA 125°C 5V -40°C to +100°C -40°C to +100°C 1000 V Class 2 Note 3 Electrostatic Discharge Classification (MIL-STD-883E) Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Forward Voltage (Vf, V) Min. C460XR260-Sxx00-A C470XR260-Sxx00-A Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (µm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (µm) Back Contact Metal Thickness (μm) (Au/Sn) Note 4 Reverse Current [I(Vr=5V), μA] Max. 2 2 Full Width Half Max (λD, nm) Typ. 21 22 CxxxXR230-Sxx00-A Dimension 180 x 340 130 x 280 230 x 380 150 105 1.2 140 x 300 1.7 Tolerance ± 25 ± 25 ± 25 ± 15 -5, +15 ± 0.5 ± 15 ± 0.3 Typ. 3.2 3.2 Max. 3.7 3.7 2.7 2.7 Notes: 1. 2. 3. 4. 5. 6. 7. Maximum ratings are package-dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree XThin® Applications Note for more assembly process information. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright® Applications Note for detailed packaging recommendations. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. See Cree XThin Applications Note for more information. Specifications are subject to change without notice. XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XBright and XThin are registered trademarks, and XT, XR-18 and XR-21 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 2 CPR3CZ Rev. - Standard Bins for CxxxXR230-Sxx00-A LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (C460XR230-Sxx00-A) orders may be filled with any or all bins (C460XR230-01xx-A) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 20 mA. XR-2 Radiant Flux 24.0 mW 21.0 mW C460XR230-0117-A C460XR230-0113-A C460XR230-S200-A C460XR230-0118-A C460XR230-0114-A C460XR230-0119-A C460XR230-0115-A C460XR230-0120-A C460XR230-0116-A 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm Radiant Flux C470XR230-S200-A 21.0 mW 465 nm C470XR230-0113-A C470XR230-0114-A C470XR230-0115-A C470XR230-0116-A 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm XR-8 Radiant Flux 24.0 mW 21.0 mW 18.0 mW C460XR230-0117-A C460XR230-0113-A C460XR230-0109-A C460XR230-S800-A C460XR230-0118-A C460XR230-0114-A C460XR230-0110-A C460XR230-0119-A C460XR230-0115-A C460XR230-0111-A C460XR230-0120-A C460XR230-0116-A C460XR230-0112-A 455 nm 457.5 nm 460 nm Dominant Wavelength C470XR230-S800-A 462.5 nm 465 nm Radiant Flux 21.0 mW C470XR230-0113-A C470XR230-0109-A C470XR230-0114-A C470XR230-0110-A C470XR230-0115-A C470XR230-0111-A C470XR230-0116-A C470XR230-0112-A 18.0 mW 465 nm 467.5 nm 470 nm Dominant Wavelength 472.5 nm 475 nm Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XBright and XThin are registered trademarks, and XT, XR-18 and XR-21 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3CZ Rev. - Characteristic Curves These are representative measurements for the XThin product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage 6.00 30 Wavelength Shift vs Forward Current 5.00 25 4.00 20 Shift (nm) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3.00 If (mA) 15 2.00 10 1.00 5 0.00 0 0.0 -1.00 0 5 10 15 20 25 30 Vf (V) If (mA) Relative Intensity vs Forward Current 100 140 Relative Intensity vs Peak Wavelength 120 80 100 Relative Intensity (%) 0 5 10 15 20 25 30 % Intensity 60 80 60 40 40 20 20 0 400 500 600 If(mA) Wavelength (nm) Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC, XBright and XThin are registered trademarks, and XT, XR-18 and XR-21 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3CZ Rev. -