CY62148B

CY62148B MoBL™ 512K x 8 Static RAM Features • 4.5V–5.5V operation • Low active power — Typical active current: 2.5 mA @ f = 1 MHz • • • • • — Typical active current: 12.5 mA @ f = fmax Low standby current Automatic power-down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE and OE features CMOS for optimum speed/power an automatic power-down feature that reduces power consumption by more than 99% when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH for read. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY62148B is available in a standard 32-pin 450-mil-wide body width SOIC, 32-pin TSOP II, and 32-pin Reverse TSOP II packages. Functional Description The CY62148B is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has Logic Block Diagram Pin Configuration Top View SOIC TSOP II A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A18 WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 I/O0 INPUT BUFFER A0 A1 A4 A5 A6 A7 A12 A14 A16 A17 I/O1 ROW DECODER I/O2 SENSE AMPS 512 x 256 x 8 ARRAY I/O3 I/O4 I/O5 Top View Reverse TSOP II GND I/O2 I/O1 I/O0 A0 A1 A2 A3 A4 A5 A6 A7 A12 A14 A16 A17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 OE A11 A9 A8 A13 WE A18 A15 Vcc CE WE OE COLUMN DECODER POWER DOWN I/O6 I/O7 Cypress Semiconductor Corporation Document #: 38-05039 Rev. *B A2 A3 A15 A18 A13 A8 A9 A11 A10 • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 October 8, 2001 CY62148B MoBL™ Product Portfolio Power Dissipation Operating, Icc VCC Range Product CY62148BLL Min. 4.5 V Typ. 5.0V Max. 5.5V Speed 70 ns Temp. Com’l Ind’l Typ. f = fmax [3] Standby (ISB2) Typ.[3] 4 µA Max. 20 µA Max. 20 mA 12.5 mA Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND ....... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ..................................... –0.5V to VCC +0.5V DC Input Voltage[1] ................................. –0.5V to VCC +0.5V Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage...............................................2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA Operating Range Range Commercial Industrial Ambient Temperature[2] 0°C to +70°C –40°C to +85°C VCC 4.5V–5.5V Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “Instant On” case temperature 3. Typical values are measured at VCC = 5V, TA = 25°C, and are included for reference only and are not tested or guaranteed. Document #: 38-05039 Rev. *B Page 2 of 11 CY62148B MoBL™ Electrical Characteristics Over the Operating Range CY62148B-70 Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current — TTL Inputs Automatic CE Power-Down Current — CMOS Inputs GND ≤ VI ≤ VCC GND ≤ VI ≤ VCC, Output Disabled f = fMAX = 1/tRC f = 1 MHz Max. VCC, CE ≥ VIH VIN ≥ VIH or VIN ≤ VIL, f = fMAX Max. VCC, CE ≥ VCC – 0.3V, VIN ≥ VCC – 0.3V, or VIN ≤ 0.3V, f =0 Com/Ind’l IOUT =0 mA VCC = Max., Com/ Ind’l Test Conditions VCC = Min., IOH = – 1 mA VCC = Min., IOL = 2.1 mA 2.2 –0.3 –1 –1 12.5 2.5 1.5 Min. 2.4 0.4 VCC +0.3 0.8 +1 +1 20 Typ.[3] Max. Unit V V V V µA µA mA mA mA ISB1 ISB2 Com/ Ind’l 4 20 µA Capacitance[4] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. 6 8 Unit pF pF AC Test Loads and Waveforms R1 1800Ω 5V 100 pF INCLUDING JIG AND SCOPE OUTPUT R2 5 pF 990 Ω INCLUDING JIG AND SCOPE (b) 3.0V 90% R2 990 Ω GND ≤ 3 ns 10% 90% 10% ≤ 3 ns ALL INPUT PULSES R1 1800 Ω 5V OUTPUT (a) Equivalent to: THEVENIN EQUIVALENT 639 Ω 1.77V OUTPUT Note: 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05039 Rev. *B Page 3 of 11 CY62148B MoBL™ Switching Characteristics[5] Over the Operating Range 62148BLL-70 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD WRITE CYCLE tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE [8] Description Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z[6] OE HIGH to High Z CE LOW to Low Z CE HIGH to High Z [6, 7] [6] [6, 7] Min. 70 Max. Unit ns 70 10 70 35 5 25 10 25 0 70 70 60 60 0 0 55 30 0 5 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns CE LOW to Power-Up CE HIGH to Power-Down Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z [6] WE LOW to High Z[6, 7] Notes: 5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 100-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 38-05039 Rev. *B Page 4 of 11 CY62148B MoBL™ Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR tCDR[4] tR[9] Description VCC for Data Retention Data Retention Current Com’l Ind’l Operation Recovery Time LL LL No input may exceed VCC + 0.3V VCC = VDR = 3.0V CE > VCC – 0.3V VIN > VCC – 0.3V or VIN < 0.3V Conditions Min. 2.0 20 20 0 tRC Typ.[3] Max. Unit V µA µA ns ns Chip Deselect to Data Retention Time Data Retention Waveform DATA RETENTION MODE VCC 3.0V tCDR CE VDR > 2V 3.0V tR Switching Waveforms Read Cycle No.1[10, 11] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[11, 12] ADDRESS tRC CE tACE OE tDOE tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZOE tHZCE DATA VALID tPD 50% ISB HIGH IMPEDANCE DATA OUT Notes: 9. Full Device operatin requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at Vcc(min) > 100 µs. 10. Device is continuously selected. OE, CE = VIL. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE transition LOW. Document #: 38-05039 Rev. *B Page 5 of 11 CY62148B MoBL™ Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[13] tWC ADDRESS tSCE CE tSA tAW tPWE WE tSD DATA I/O DATA VALID tHD tHA Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[13, 14] tWC ADDRESS tSCE CE tHZCE tAW tSA WE tPWE tHA OE tSD DATA I/O NOTE 15 tHZOE Notes: 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 14. Data I/O is high-impedance if OE = VIH. 15. During this period the I/Os are in the output state and input signals should not be applied. tHD DATAIN VALID Document #: 38-05039 Rev. *B Page 6 of 11 CY62148B MoBL™ Switching Waveforms (continued) Write Cycle No.3 (WE Controlled, OE LOW)[13, 14] tWC ADDRESS tSCE CE tHZCE tAW tSA WE tSD DATA I/O NOTE 15 tHA tPWE tHD DATA VALID tHZWE tLZWE Truth Table CE H L L L OE X L X H WE X H L H I/O0 – I/O7 High Z Data Out Data In High Z Power-Down Read Write Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Ordering Information Speed (ns) 70 Ordering Code CY62148BLL-70SC CY62148BLL-70ZC CY62148BLL-70ZRC CY62148BLL-70SI CY62148BLL-70ZI CY62148BLL-70ZRI Package Name S34 ZS32 ZU32 S34 ZS32 ZU32 Package Type 32-Lead (450-Mil) Molded SOIC 32-Lead TSOP II 32-Lead RTSOP II 32-Lead (450-Mil) Molded SOIC 32-Lead TSOP II 32-Lead RTSOP II Industrial Operating Range Commercial Document #: 38-05039 Rev. *B Page 7 of 11 CY62148B MoBL™ Package Diagrams 32-Lead (450 MIL) Molded SOIC S34 51-85081-A Document #: 38-05039 Rev. *B Page 8 of 11 CY62148B MoBL™ Package Diagrams (continued) 32-Lead TSOP II ZS32 51-85095 Document #: 38-05039 Rev. *B Page 9 of 11 CY62148B MoBL™ Package Diagrams (continued) 32-Lead Reverse Thin Small Outline Package Type II ZU32 51-85138-** Document #: 38-05039 Rev. *B Page 10 of 11 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY62148B MoBL™ Document Title: CY62148B 512K x 8 Static RAM Document Number: 38-05039 REV. ** *A *B ECN NO. 106833 106970 109766 Issue Date 05/01/01 07/16/01 10/09/01 Orig. of Change SZV GAV MGN Description of Change Change from Spec number 38-01104 to 38-05039 Modified annotations on Pin Configurations; tSD = 30 ns Remove 55-ns devices Document #: 38-05039 Rev. *B Page 11 of 11