CY7C1007BN-15VXCT

CY7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed — tAA = 15 ns • CMOS for optimum speed/power • Automatic power-down when deselected • TTL-compatible inputs and outputs Writing to the devices is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19). Reading from the devices is accomplished by taking Chip Enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the data output (DOUT) pin. The output pin (DOUT) is placed in a high-impedance state when the device is deselected (CE HIGH) or during a write operation (CE and WE LOW). The CY7C107BN is available in a standard 400-mil-wide SOJ; the CY7C1007BN is available in a standard 300-mil-wide SOJ Logic Block Diagram Pin Configuration SOJ Top View DIN A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 512 x 2048 ARRAY DOUT POWER DOWN DOUT WE GND 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A9 A8 A7 A6 A5 A4 NC A3 A2 A1 A0 DIN CE CE A9 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 A 19 COLUMN DECODER SENSE AMPS ROW DECODER INPUT BUFFER A0 A1 A2 A3 A4 A5 A6 A7 A8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 WE Selection Guide 7C107BN-15 7C1007BN-15 15 80 2 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current ISB2 (mA) Cypress Semiconductor Corporation Document #: 001-06426 Rev. ** • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised February 1, 2006 [+] Feedback CY7C107BN CY7C1007BN Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..................................-65°C to +150°C Static Discharge Voltage............................................ >2001V (per MIL-STD-883, Method 3015) Latch-Up Current ..................................................... >200 mA Ambient Temperature with Power Applied..............................................-55°C to +125°C Operating Range Supply Voltage on VCC Relative to GND[1] ..... -0.5V to +7.0V Range Commercial Industrial DC Voltage Applied to Outputs in High Z State[1] .................................... -0.5V to VCC + 0.5V DC Input Voltage[1]..................................-0.5V to VCC + 0.5V Ambient Temperature[2] 0°C to +70°C -40°C to +85°C VCC 5V ± 10% 5V ± 10% Electrical Characteristics Over the Operating Range 7C107BN-15 7C1007BN-15 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage Voltage[1] Min. Max. Unit 2.4 V 0.4 V 2.2 VCC + 0.3 V -0.3 0.8 V VIL Input LOW IIX Input Leakage Current GND < VI < VCC -1 +1 mA IOZ Output Leakage Current GND < VI < VCC, Output Disabled –5 +5 mA IOS Output Short Circuit Current[3] VCC = Max., VOUT = GND -300 mA ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 80 mA ISB1 Automatic CE Power-Down Current— TTL Inputs Max. VCC, CE > VIH, VIN >VIH or VIN < VIL, f = f MAX 20 mA ISB2 Automatic CE Power-Down Current — CMOS Inputs Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V, f = 0 2 mA Capacitance[4] Parameter CIN: Addresses Description Input Capacitance CIN: Controls COUT Test Conditions TA = 25 × C, f = 1 MHz, VCC = 5.0V Output Capacitance Max. Unit 7 pF 10 pF 10 pF Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “Instant On” case temperature. 3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-06426 Rev. ** Page 2 of 7 [+] Feedback CY7C107BN CY7C1007BN AC Test Loads and Waveforms R1 480Ω 5V R1 480Ω 5V OUTPUT R2 255Ω 30 pF INCLUDING JIG AND SCOPE (a) Equivalent to: ALL INPUT PULSES 3.0V OUTPUT 5 pF R2 255Ω INCLUDING JIG AND SCOPE (b) GND 10% 90% 90% 10% ≤ 3 ns ≤ 3 ns THÉVENIN EQUIVALENT 167Ω OUTPUT 1.73V Switching Characteristics[5] Over the Operating Range 7C107BN-15 7C1007BN-15 Parameter Description Min. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid Z[6] tLZCE CE LOW to Low tHZCE CE HIGH to High Z[6, 7] tPU CE LOW to Power-Up ns 15 3 ns ns 15 ns 7 ns 3 ns 0 CE HIGH to Power-Down tPD WRITE CYCLE 15 ns 15 ns [8] tWC Write Cycle Time 15 ns tSCE CE LOW to Write End 12 ns tAW Address Set-Up to Write End 12 ns tHA Address Hold from Write End 0 ns tSA Address Set-Up to Write Start 0 ns tPWE WE Pulse Width 12 ns tSD Data Set-Up to Write End 8 ns tHD Data Hold from Write End 0 ns tLZWE WE HIGH to Low Z[6] 3 ns tHZWE WE LOW to High Z[6, 7] 7 ns Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE and tHZWE is less than tLZWE for any given device. 7. tHZCE and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 001-06426 Rev. ** Page 3 of 7 [+] Feedback CY7C107BN CY7C1007BN Switching Waveforms Read Cycle No. 1[10, 11] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2[11, 12] ADDRESS tRC CE tACE tHZCE tLZCE DATA OUT VCC SUPPLY CURRENT HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tPD tPU 50% 50% ICC ISB Write Cycle No. 1 (CE Controlled)[13] tWC ADDRESS tSA tSCE CE tHA tAW tPWE WE tSD DATA IN DATA OUT tHD DATA VALID HIGH IMPEDANCE Notes: 9. No input may exceed VCC + 0.5V. 10. Device is continuously selected, CE = VIL. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE transition LOW. 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 001-06426 Rev. ** Page 4 of 7 [+] Feedback CY7C107BN CY7C1007BN Switching Waveforms (continued) Write Cycle No. 2 (WE Controlled)[13] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE tSD DATA IN tHD DATA VALID tHZWE tLZWE HIGH IMPEDANCE DATA OUT DATA UNDEFINED Truth Table CE WE DOUT Mode Power H X High Z Power-Down Standby (ISB) L H Data Out Read Active (ICC) L L High Z Write Active (ICC) Ordering Information Speed (ns) 15 Ordering Code CY7C107BN-15VC CY7C1007BN-15VC CY7C1007BN-15VXC CY7C107BN-15VI Package Diagram 51-85032 51-85031 51-85031 51-85032 Package Type 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ (Pb-free) 28-Lead (400-Mil) Molded SOJ Operating Range Commercial Industrial Please contact local sales representative regarding availability of these parts Document #: 001-06426 Rev. ** Page 5 of 7 [+] Feedback CY7C107BN CY7C1007BN Package Diagrams 28-Lead (400-Mil) Molded SOJ (51-85032) PIN 1 I.D 14 1 .395 .405 15 MIN. MAX. DIMENSIONS IN INCHES .435 .445 28 .720 .730 SEATING PLANE .128 .148 0.004 .026 .032 .050 TYP. .007 .013 .360 .380 .025 MIN. .015 .020 51-85032.*B 51-85032-*B 28-Lead (300-Mil) Molded SOJ (51-85031) NOTE : 1. JEDEC STD REF MO088 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.006 in (0.152 mm) PER SIDE MIN. MAX. 3. DIMENSIONS IN INCHES DETAIL A EXTERNAL LEAD DESIGN PIN 1 ID 14 1 0.291 0.300 15 0.330 0.350 28 OPTION 1 0.697 0.713 0.014 0.020 OPTION 2 SEATING PLANE 0.120 0.140 0.050 TYP. 0.026 0.032 0.013 0.019 A 0.007 0.013 0.004 0.025 MIN. 0.262 0.272 51-85031-*C All product or company names mentioned in this document may be the trademarks of their respective holders. Document #: 001-06426 Rev. ** Page 6 of 7 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback CY7C107BN CY7C1007BN Document History Page Document Title: CY7C107BN/CY7C1007BN 1M x 1 Static RAM Document Number: 001-06426 REV. ECN NO. Issue Date Orig. of Change ** 423847 See ECN NXR Document #: 001-06426 Rev. ** Description of Change New Data Sheet Page 7 of 7 [+] Feedback