CY7C1441KV25
36-Mbit (1M × 36) Flow-Through SRAM
36-Mbit (1M × 36) Flow-Through SRAM
Features
Functional Description
■
Supports 133-MHz bus operations
■
1M × 36 common I/O
■
2.5-V core power supply
■
2.5-V I/O power supply
■
Fast clock-to-output times
❐ 6.5 ns (133-MHz version)
■
Provide high performance 2-1-1-1 access rate
■
User selectable burst counter supporting interleaved or linear
burst sequences
■
Separate processor and controller address strobes
■
Synchronous self timed write
■
Asynchronous output enable
■
CY7C1441KV25 available in Pb-free 165-ball FBGA package.
■
JTAG boundary scan for FBGA package
■
ZZ sleep mode option
The CY7C1441KV25 is a 2.5 V, 1M × 36 synchronous flow-through
SRAM, designed to interface with high-speed microprocessors
with minimum glue logic. Maximum access delay from clock rise
is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automatically
for the rest of the burst access. All synchronous inputs are gated
by registers controlled by a positive edge-triggered Clock (CLK)
input. The synchronous inputs include all addresses, all data
inputs, address pipelining Chip Enable (CE1), depth expansion
Chip Enables (CE2 and CE3), Burst Control inputs (ADSC,
ADSP, and ADV), Write Enables (BWx and BWE), and Global
Write (GW). Asynchronous inputs include the Output Enable
(OE) and the ZZ pin.
The CY7C1441KV25 allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects an
interleaved burst sequence and a LOW selects a linear burst
sequence. Burst accesses can be initiated with the Processor
Address Strobe (ADSP) or the cache Controller Address Strobe
(ADSC) inputs. Address advancement is controlled by the
Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either ADSP or ADSC are active. Subsequent burst
addresses can be internally generated as controlled by the ADV.
The CY7C1441KV25 operates from a +2.5 V core power
supply while all outputs may operate with either a +2.5 V supply.
All inputs and outputs are JEDEC-standard JESD8-5
compatible.
Selection Guide
Description
133 MHz
Maximum Access Time
Maximum Operating Current
Cypress Semiconductor Corporation
Document Number: 001-94722 Rev. *E
× 36
•
198 Champion Court
•
Unit
6.5
ns
170
mA
San Jose, CA 95134-1709
•
408-943-2600
Revised January 3, 2018
CY7C1441KV25
Logic Block Diagram – CY7C1441KV25
ADDRESS
REGISTER
A 0, A1, A
A [1:0]
MODE
BURST Q1
COUNTER
AND LOGIC
Q0
CLR
ADV
CLK
ADSC
ADSP
DQ D , DQP D
BW D
BYTE
WRITE REGISTER
DQ C, DQP C
BW C
BYTE
WRITE REGISTER
DQ D , DQP D
BYTE
WRITE REGISTER
DQ C, DQP C
BYTE
WRITE REGISTER
DQ B , DQP B
BW B
DQ B , DQP B
BYTE
BYTE
WRITE REGISTER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQ s
DQP A
DQP B
DQP C
DQP D
WRITE REGISTER
DQ A , DQP A
BW A
BWE
DQ A , DQPA
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
GW
ENABLE
REGISTER
CE1
CE2
INPUT
REGISTERS
CE3
OE
ZZ
SLEEP
CONTROL
Document Number: 001-94722 Rev. *E
Page 2 of 29
CY7C1441KV25
Contents
Pin Configurations ........................................................... 4
Pin Definitions .................................................................. 5
Functional Overview ........................................................ 6
Single Read Accesses ................................................ 6
Single Write Accesses Initiated by ADSP ................... 6
Single Write Accesses Initiated by ADSC ................... 7
Burst Sequences ......................................................... 7
Sleep Mode ................................................................. 7
Interleaved Burst Address Table ................................. 7
Linear Burst Address Table ......................................... 7
ZZ Mode Electrical Characteristics .............................. 7
Truth Table ........................................................................ 8
Partial Truth Table for Read/Write .................................. 9
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 10
Disabling the JTAG Feature ...................................... 10
Test Access Port (TAP) ............................................. 10
Performing a TAP Reset ........................................... 10
TAP Registers ........................................................... 10
TAP Instruction Set ................................................... 11
Tap Controller State Diagram ........................................ 12
Tap Controller Block Diagram ....................................... 13
TAP Timing ...................................................................... 13
TAP AC Switching Characteristics ............................... 14
2.5-V TAP AC Test Conditions ...................................... 15
2.5-V TAP AC Output Load Equivalent ......................... 15
TAP DC Electrical Characteristics
and Operating Conditions ............................................. 15
Document Number: 001-94722 Rev. *E
Identification Register Definitions ................................ 16
Scan Register Sizes ....................................................... 16
Identification Codes ....................................................... 16
Boundary Scan Order .................................................... 17
Maximum Ratings ........................................................... 18
Operating Range ............................................................. 18
Neutron Soft Error Immunity ......................................... 18
Electrical Characteristics ............................................... 18
Capacitance .................................................................... 19
Thermal Resistance ........................................................ 19
AC Test Loads and Waveforms ..................................... 19
Switching Characteristics .............................................. 20
Timing Diagrams ............................................................ 21
Ordering Information ...................................................... 25
Ordering Code Definitions ......................................... 25
Package Diagram ............................................................ 26
Acronyms ........................................................................ 27
Document Conventions ................................................. 27
Units of Measure ....................................................... 27
Document History Page ................................................. 28
Sales, Solutions, and Legal Information ...................... 29
Worldwide Sales and Design Support ....................... 29
Products .................................................................... 29
PSoC®Solutions ....................................................... 29
Cypress Developer Community ................................. 29
Technical Support ..................................................... 29
Page 3 of 29
CY7C1441KV25
Pin Configurations
Figure 1. 165-ball FBGA (15 × 17 × 1.4 mm) Pinout
CY7C1441KV25 (1M × 36)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
A
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC
NC/144M
A
CE2
BWD
BWA
CLK
GW
OE
ADSP
A
NC/576M
DQPC
DQC
NC
DQC
VDDQ
VSS
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VDDQ
VDDQ
NC/1G
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
DQC
NC
DQD
DQC
VDD
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
DQB
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
DQC
NC
DQD
VDDQ
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
NC/72M
A
A
TDI
A
A1
VSS
NC
TDO
A
A
A
A
R
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
Document Number: 001-94722 Rev. *E
Page 4 of 29
CY7C1441KV25
Pin Definitions
Name
I/O
Description
A0, A1, A
Input-Synchronous
Address Inputs. Used to select one of the address locations. Sampled at the rising
edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled
active. A[1:0] feed the 2-bit counter.
BWA, BWB, BWC,
BWD
Input-Synchronous
Byte Write Select Inputs, Active LOW. Qualified with BWE to conduct byte writes to
the SRAM. Sampled on the rising edge of CLK.
GW
Input-Synchronous
Global Write Enable Input, Active LOW. When asserted LOW on the rising edge of
CLK, a global write is conducted (ALL bytes are written, regardless of the values on
BWX and BWE).
CLK
Input-Clock
Clock Input. Used to capture all synchronous inputs to the device. Also used to
increment the burst counter when ADV is asserted LOW during a burst operation.
CE1
Input-Synchronous
Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE2 and CE3 to select or deselect the device. ADSP is ignored if CE1
is HIGH. CE1 is sampled only when a new external address is loaded.
CE2
Input-Synchronous
Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE3 to select or deselect the device. CE2 is sampled only
when a new external address is loaded.
CE3
Input-Synchronous
Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE2 to select or deselect the device. CE3 is sampled only
when a new external address is loaded.
OE
Input-Asynchronous Output Enable, Asynchronous Input, Active LOW. Controls the direction of the I/O
pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are
tri-stated and act as input data pins. OE is masked during the first clock of a read cycle
when emerging from a deselected state.
ADV
Input-Synchronous
Advance Input Signal. Sampled on the rising edge of CLK. When asserted, it automatically increments the address in a burst cycle.
ADSP
Input-Synchronous
Address Strobe from Processor. Sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both
asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
Input-Synchronous
Address Strobe from Controller. Sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both
asserted, only ADSP is recognized.
BWE
Input-Synchronous
Byte Write Enable Input, Active LOW. Sampled on the rising edge of CLK. This signal
must be asserted LOW to conduct a byte write.
ZZ
Input-Asynchronous ZZ Sleep Input, Active HIGH. When asserted HIGH places the device in a non
time-critical “sleep” condition with data integrity preserved. For normal operation, this
pin must be LOW or left floating. ZZ pin has an internal pull down.
DQs
I/O-Synchronous
Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the read cycle. The
direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave
as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition.The outputs
are automatically tri-stated during the data portion of a write sequence, during the first
clock when emerging from a deselected state, and when the device is deselected,
regardless of the state of OE.
DQPX
I/O-Synchronous
Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs.
During write sequences, DQPx is controlled by BWX correspondingly.
Document Number: 001-94722 Rev. *E
Page 5 of 29
CY7C1441KV25
Pin Definitions (continued)
Name
MODE
VDD
VDDQ
VSS
VSSQ
TDO
I/O
Description
Input-Static
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to
VDD or left floating selects interleaved burst sequence. This is a strap pin and should
remain static during device operation. Mode pin has an internal pull up.
Power Supply
I/O Power Supply
Ground
I/O Ground
Power Supply Inputs to the Core of the Device.
Power Supply for I/O Circuitry.
Ground for the Core of the Device.
Ground for I/O Circuitry.
JTAG Serial Output Serial Data-Out to the JTAG Circuit. Delivers data on the negative edge of TCK. If the
Synchronous
JTAG feature is not utilized, this pin should be left unconnected.
TDI
JTAG Serial Input
Synchronous
Serial Data-In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not utilized, this pin can be left floating or connected to VDD through a pull up
resistor.
TMS
JTAG Serial Input
Synchronous
Serial Data-In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not utilized, this pin can be disconnected or connected to VDD.
TCK
JTAG-Clock
Clock Input to the JTAG Circuitry. If the JTAG feature is not utilized, this pin must be
connected to VSS.
NC
–
No Connects. Not internally connected to the die.
NC/72M, NC/144M,
NC/288M,
NC/576M, NC/1G
–
No Connects. Not internally connected to the die. NC/72M, NC/144M, NC/288M,
NC/576M, and NC/1G are address expansion pins and are not internally connected to
the die.
Functional Overview
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. Maximum access delay from the
clock rise (t CDV) is 6.5 ns (133 MHz device).
The CY7C1441KV25 supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium processors. The burst
order is user selectable and is determined by sampling the
MODE input. Accesses are initiated with either ADSP or ADSC.
Address advancement through the burst sequence is controlled
by the ADV input. A two-bit on-chip wraparound burst counter
captures the first address in a burst sequence and automatically
increments the address for the rest of the burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWx) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to all
four bytes. All writes are simplified with on-chip synchronous self
timed write circuitry.
Three synchronous chip selects (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE1 is
HIGH.
Document Number: 001-94722 Rev. *E
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted
active and (2) ADSP or ADSC is asserted LOW (if the access is
initiated by ADSC, the write inputs must be deasserted during
this first cycle). The address presented to the address inputs is
latched into the address register and the burst counter or control
logic and presented to the memory core. If the OE input is
asserted LOW, the requested data is available as the data
outputs a maximum to tCDV after clock rise. ADSP is ignored if
CE1 is HIGH.
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, CE3 are all asserted active
and (2) ADSP is asserted LOW. The addresses presented are
loaded into the address register and the burst inputs (GW, BWE,
and BWX) are ignored during this first clock cycle. If the write
inputs are asserted active (see Truth Table on page 8 for
appropriate states that indicate a write) on the next clock rise, the
appropriate data is latched and written into the device. Byte
writes are allowed. All I/Os are tri-stated during a byte write.
Because this is a common I/O device, the asynchronous OE
input signal must be deasserted and the I/Os must be tri-stated
prior to the presentation of data to DQs. As a safety precaution,
the data lines are tri-stated when a write cycle is detected,
regardless of the state of OE.
Page 6 of 29
CY7C1441KV25
Single Write Accesses Initiated by ADSC
This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted
active, (2) ADSC is asserted LOW, (3) ADSP is deasserted
HIGH, and (4) the write input signals (GW, BWE, and BWX)
indicate a write access. ADSC is ignored if ADSP is active LOW.
The addresses presented are loaded into the address register
and the burst counter or control logic and delivered to the
memory core. The information presented to DQS is written into
the specified address location. Byte writes are allowed. All I/Os
are tri-stated when a write is detected, even a byte write.
Because this is a common I/O device, the asynchronous OE
input signal must be deasserted and the I/Os must be tri-stated
prior to the presentation of data to DQs. As a safety precaution,
the data lines are tri-stated when a write cycle is detected,
regardless of the state of OE.
completion of the operation guaranteed. The device must be
deselected prior to entering the sleep mode. CE1, CE2, CE3,
ADSP, and ADSC must remain inactive for the duration of tZZREC
after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Burst Sequences
The CY7C1441KV25 provides an on-chip two-bit wraparound
burst counter inside the SRAM. The burst counter is fed by A[1:0],
and can follow either a linear or interleaved burst order. The burst
order is determined by the state of the MODE input. A LOW on
MODE selects a linear burst sequence. A HIGH on MODE
selects an interleaved burst order. Leaving MODE unconnected
causes the device to default to a interleaved burst sequence.
Linear Burst Address Table
(MODE = GND)
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation sleep mode. Two clock cycles
are required to enter into or exit from this sleep mode. When in
this mode, data integrity is guaranteed. Accesses pending when
entering the sleep mode are not considered valid nor is the
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD– 0.2 V
–
75
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2 V
–
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2 V
2tCYC
–
ns
tZZI
ZZ active to sleep current
This parameter is sampled
–
2tCYC
ns
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
0
–
ns
Document Number: 001-94722 Rev. *E
Page 7 of 29
CY7C1441KV25
Truth Table
The truth table for CY7C1441KV25 follows. [1, 2, 3, 4, 5]
Cycle Description
Address Used CE1 CE2 CE3 ZZ
ADSP
ADSC ADV WRITE OE CLK
DQ
Deselected Cycle, Power Down
None
H
X
X
L
X
L
X
X
X
L–H Tri-State
Deselected Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L–H Tri-State
Deselected Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L–H Tri-State
Deselected Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L–H Tri-State
Deselected Cycle, Power Down
None
X
X
H
L
H
L
X
X
X
L–H Tri-State
Sleep Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L–H
Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L–H Tri-State
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L–H
D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L–H
Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L–H Tri-State
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L–H
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L–H Tri-State
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L–H
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L–H Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L–H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L–H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L–H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L–H Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L–H
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L–H Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L–H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L–H
D
Q
Q
Q
Notes
1. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
2. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW = L. WRITE = H when all Byte write enable signals, BWE, GW = H.
3. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
4. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX.
Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC.
As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the write cycle.
5. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is inactive
or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document Number: 001-94722 Rev. *E
Page 8 of 29
CY7C1441KV25
Partial Truth Table for Read/Write
The partial truth table for read/write for CY7C1441KV25 follows. [6, 7]
Function (CY7C1441KV25)
GW
BWE
BWD
BWC
BWB
BWA
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A (DQA, DQPA)
H
L
H
H
H
L
Write Byte B(DQB, DQPB)
H
L
H
H
L
H
Write Bytes A, B (DQA, DQB, DQPA, DQPB)
H
L
H
H
L
L
Write Byte C (DQC, DQPC)
H
L
H
L
H
H
Write Bytes C, A (DQC, DQA, DQPC, DQPA)
H
L
H
L
H
L
Write Bytes C, B (DQC, DQB, DQPC, DQPB)
H
L
H
L
L
H
Write Bytes C, B, A (DQC, DQB, DQA, DQPC, DQPB,
DQPA)
H
L
H
L
L
L
Write Byte D (DQD, DQPD)
H
L
L
H
H
H
Write Bytes D, A (DQD, DQA, DQPD, DQPA)
H
L
L
H
H
L
Write Bytes D, B (DQD, DQA, DQPD, DQPA)
H
L
L
H
L
H
Write Bytes D, B, A (DQD, DQB, DQA, DQPD, DQPB,
DQPA)
H
L
L
H
L
L
Write Bytes D, B (DQD, DQB, DQPD, DQPB)
H
L
L
L
H
H
Write Bytes D, B, A (DQD, DQC, DQA, DQPD, DQPC,
DQPA)
H
L
L
L
H
L
Write Bytes D, C, A (DQD, DQB, DQA, DQPD, DQPB,
DQPA)
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Notes
6. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
7. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write is done based on which byte write is active.
8. BWx represents any byte write signal BWX.To enable any byte write BWx, a logic LOW signal should be applied at clock rise. Any number of bye writes can be enabled
at the same time for any given write.
Document Number: 001-94722 Rev. *E
Page 9 of 29
CY7C1441KV25
IEEE 1149.1 Serial Boundary Scan (JTAG)
TAP Registers
The CY7C1441KV25 contains a TAP controller, instruction
register, boundary scan register, bypass register, and ID register.
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test circuitry.
Only one register can be selected at a time through the
instruction register. Data is serially loaded into the TDI ball on the
rising edge of TCK. Data is output on the TDO ball on the falling
edge of TCK.
Disabling the JTAG Feature
Instruction Register
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternately be connected to VDD through a pull up resistor. TDO
must be left unconnected. On power up, the device comes up in
a reset state, which does not interfere with the operation of the
device.
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO balls as shown in the Tap Controller Block Diagram on
page 13. On power up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as described
in the previous section.
The CY7C1441KV25 incorporates a serial boundary scan test
access port (TAP). This part is fully compliant with 1149.1. The
TAP operates using JEDEC-standard 2.5 V I/O logic level.
Test Access Port (TAP)
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary ‘01’ pattern to allow fault
isolation of the board level serial test data path.
Test Clock (TCK)
Bypass Register
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This ball can be left
unconnected if the TAP is not used. The ball is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see Tap Controller State Diagram
on page 12. TDI is internally pulled up and can be unconnected
if the TAP is unused in an application. TDI is connected to the
most significant bit (MSB) of any register.
Test Data-Out (TDO)
The TDO output ball is used to serially clock data out from the
registers. The output is active depending on the current state of
the TAP state machine (see Identification Codes on page 16).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A RESET is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating.
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that is placed between the TDI and
TDO balls. This allows data to be shifted through the SRAM with
minimal delay. The bypass register is set LOW (VSS) when the
BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR state.
It is then placed between the TDI and TDO balls when the
controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions are used to
capture the contents of the I/O ring.
The Boundary Scan Order tables show the order in which the bits
are connected. Each bit corresponds to one of the bumps on the
SRAM package. The MSB of the register is connected to TDI and
the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in the Identification Register Definitions on
page 16.
At power-up, the TAP is reset internally to ensure that TDO
comes up in a High Z state.
Document Number: 001-94722 Rev. *E
Page 10 of 29
CY7C1441KV25
TAP Instruction Set
Overview
Eight different instructions are possible with the three bit
instruction register.All combinations are listed in the Identification
Codes on page 16. Three of these instructions are listed as
RESERVED and should not be used. The other five instructions
are described in detail below.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO balls. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
IDCODE
The IDCODE instruction causes a vendor specific, 32-bit code to
be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
still possible to capture all other signals and simply ignore the
value of the clock captured in the boundary scan register.
When the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells prior
to the selection of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required – that is, while data captured
is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The IDCODE instruction is loaded into the instruction register on
power up or whenever the TAP controller is given a test logic
reset state.
The EXTEST instruction enables the preloaded data to be driven
out through the system output pins. This instruction also selects
the boundary scan register to be connected for serial access
between the TDI and TDO in the Shift-DR controller state.
SAMPLE Z
EXTEST OUTPUT BUS TRI-STATE
The SAMPLE Z instruction causes the boundary scan register to
be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High Z state until the next command is given
during the “Update IR” state.
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output may undergo a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
Document Number: 001-94722 Rev. *E
The boundary scan register has a special bit located at bit #89
(for 165-ball FBGA package). When this scan cell, called the
“extest output bus tri-state”, is latched into the preload register
during the Update-DR state in the TAP controller, it directly
controls the state of the output (Q-bus) pins when the EXTEST
is entered as the current instruction. When HIGH, it enables the
output buffers to drive the output bus. When LOW, this bit places
the output bus into a High Z condition.
This bit can be set by entering the SAMPLE/PRELOAD, or
EXTEST command and then shifting the desired bit into that cell
during the Shift-DR state. During Update-DR, the value loaded
into that shift register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is preset HIGH to enable the
output when the device is powered up and also when the TAP
controller is in the Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 11 of 29
CY7C1441KV25
TAP Controller State Diagram
1
TEST-LOGIC
RESET
0
0
RUN-TEST/
IDLE
1
SELECT
DR-SCAN
1
SELECT
IR-SCAN
0
1
0
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-IR
0
1
0
PAUSE-DR
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-DR
UPDATE-IR
1
0
1
EXIT1-DR
0
1
0
1
0
The 0/1 next to each state represents the value of TMS at the rising edge of TCK.
Document Number: 001-94722 Rev. *E
Page 12 of 29
CY7C1441KV25
TAP Controller Block Diagram
TAP Timing
Figure 2. TAP Timing
1
2
Test Clock
(TCK)
3
t
t TH
t TMSS
t TMSH
t TDIS
t TDIH
TL
4
5
6
t CYC
Test Mode Select
(TMS)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CARE
Document Number: 001-94722 Rev. *E
UNDEFINED
Page 13 of 29
CY7C1441KV25
TAP AC Switching Characteristics
Over the Operating Range
Parameter [9, 10]
Parameter
Min
Max
Unit
Clock
tTCYC
TCK Clock Cycle Time
50
–
ns
tTF
TCK Clock Frequency
–
20
MHz
tTH
TCK Clock HIGH time
20
–
ns
tTL
TCK Clock LOW time
20
–
ns
tTDOV
TCK Clock LOW to TDO Valid
–
10
ns
tTDOX
TCK Clock LOW to TDO Invalid
0
–
ns
tTMSS
TMS Setup to TCK Clock Rise
5
–
ns
tTDIS
TDI Setup to TCK Clock Rise
5
–
ns
tCS
Capture SetUp to TCK Rise
5
–
ns
tTMSH
TMS Hold after TCK Clock Rise
5
–
ns
tTDIH
TDI Hold after Clock Rise
5
–
ns
tCH
Capture Hold after Clock Rise
5
–
ns
Output Times
Setup Times
Hold Times
Notes
9. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
10. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 2 V/ns (Slew Rate).
Document Number: 001-94722 Rev. *E
Page 14 of 29
CY7C1441KV25
2.5-V TAP AC Test Conditions
Input pulse levels ...............................................VSS to 2.5 V
2.5-V TAP AC Output Load Equivalent
Input rise and fall times (Slew Rate) ........................... 2 V/ns
1.25V
Input timing reference levels ....................................... 1.25 V
Output reference levels .............................................. 1.25 V
50Ω
Test load termination supply voltage .......................... 1.25 V
TDO
Z O = 50 Ω
20p F
TAP DC Electrical Characteristics and Operating Conditions
(0 °C < TA < +70 °C; VDD = 2.5 V ± 0.125 V unless otherwise noted)
Parameter [11]
Min
Max
Unit
VOH1
Output HIGH Voltage
Description
IOH = –1.0 mA
Description
VDDQ = 2.5 V
1.7
–
V
VOH2
Output HIGH Voltage
IOH = –100 µA
VDDQ = 2.5 V
2.1
–
V
VOL1
Output LOW Voltage
IOL = 1.0 mA
VDDQ = 2.5 V
–
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
VDDQ = 2.5 V
–
0.2
V
VIH
Input HIGH Voltage
VDDQ = 2.5 V
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
VDDQ = 2.5 V
–0.3
0.7
V
IX
Input Load Current
–5
5
µA
GND < VIN < VDDQ
Conditions
Note
11. All voltages referenced to VSS (GND).
Document Number: 001-94722 Rev. *E
Page 15 of 29
CY7C1441KV25
Identification Register Definitions
Bit Configuration
CY7C1441KV25 (1M × 36)
Instruction Field
Revision Number (31:29)
000
Device Depth (28:24)
01011
Description
Describes the version number.
Reserved for internal use.
Architecture and Memory Type (23:18)
000001
Defines memory type and architecture.
Bus Width and Density (17:12)
100111
Defines width and density.
Cypress JEDEC ID Code (11:1)
00000110100
ID Register Presence Indicator (0)
1
Allows unique identification of SRAM
vendor.
Indicates the presence of an ID register.
Scan Register Sizes
Register Name
Bit Size (× 36)
Instruction Bypass
3
Bypass
1
ID
32
Boundary Scan Order (165-ball FBGA package)
89
Identification Codes
Instruction
EXTEST
Code
Description
000
Captures I/O ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operations.
SAMPLE Z
010
Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces
all SRAM output drivers to a High Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does
not affect SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Document Number: 001-94722 Rev. *E
Page 16 of 29
CY7C1441KV25
Boundary Scan Order
165-ball FBGA [12, 13]
CY7C1441KV25 (1M × 36)
Bit #
Ball ID
Bit #
Ball ID
Bit #
Ball ID
Bit #
Ball ID
1
N6
26
E11
51
A3
76
N1
2
N7
N10
27
D11
52
A2
77
N2
3
28
G10
53
B2
78
P1
4
P11
29
F10
54
C2
79
R1
5
P8
30
E10
55
B1
80
R2
6
R8
31
D10
56
A1
81
P3
7
R9
32
C11
57
C1
82
R3
8
P9
33
A11
58
D1
83
P2
9
P10
34
B11
59
E1
84
R4
10
R10
35
A10
60
F1
85
P4
11
R11
36
B10
61
G1
86
N5
12
H11
37
A9
62
D2
87
P6
13
N11
38
B9
63
E2
88
R6
14
M11
39
C10
64
F2
89
Internal
15
L11
40
A8
65
G2
16
K11
41
B8
66
H1
17
J11
42
A7
67
H3
18
M10
43
B7
68
J1
19
L10
44
B6
69
K1
20
K10
45
A6
70
L1
21
J10
46
B5
71
M1
22
H9
47
J2
H10
48
A5
A4
72
23
73
K2
24
G11
49
B4
74
L2
25
F11
50
B3
75
M2
Notes
12. Balls which are NC (No Connect) are preset LOW.
13. Bit# 89 is preset HIGH.
Document Number: 001-94722 Rev. *E
Page 17 of 29
CY7C1441KV25
Maximum Ratings
Operating Range
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 °C to +150 °C
Ambient
Temperature
VDD
VDDQ
–40 °C to +85 °C
2.5 V+ 5%
2.5 V – 5%
to VDD
Range
Industrial
Ambient Temperature with
Power Applied ......................................... –55 °C to +125 °C
Supply Voltage on VDD Relative to GND .....–0.5 V to +3.6 V
Supply Voltage on VDDQ Relative to GND .... –0.5 V to +VDD
DC Voltage Applied to Outputs
in Tri-State ........................................–0.5 V to VDDQ + 0.5 V
DC Input Voltage ................................ –0.5 V to VDD + 0.5 V
Neutron Soft Error Immunity
Parameter
Latch Up Current ................................................... > 200 mA
Test
Conditions Typ Max*
Unit
LSBU
Logical
Single-Bit
Upsets
25 °C
2001 V
Description
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 2, 95% confidence limit calculation. For more details refer to Application
Note AN54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial
Failure Rates”.
Electrical Characteristics
Over the Operating Range
Parameter [14, 15]
Description
Test Conditions
Min
Max
Unit
–
2.375
2.625
V
2.375
VDD
V
2.0
–
V
–
0.4
V
1.7
VDD + 0.3 V
V
-0.3
0.7
V
VDD
Power Supply Voltage
VDDQ
I/O Supply Voltage
for 2.5 V I/O
VOH
Output HIGH Voltage
for 2.5 V I/O, IOH = –1.0 mA
VOL
Output LOW Voltage
for 2.5 V I/O, IOL = 1.0 mA
VIH
Input HIGH Voltage [14]
for 2.5 V I/O
for 2.5 V I/O
[14]
VIL
Input LOW Voltage
IX
Input Leakage Current except ZZ GND VI VDDQ
and MODE
-5
5
A
Input Current of MODE
Input = VSS
-30
–
A
Input = VDD
–
5
A
Input = VSS
-5
–
A
Input = VDD
–
30
A
Input Current of ZZ
IOZ
Output Leakage Current
GND VI VDDQ, Output Disabled
-5
5
A
IDD
VDD Operating Supply Current
VDD = Max, IOUT = 0 mA,
f = fMAX = 1/tCYC
–
170
mA
7.5 ns cycle,
133 MHz
Notes
14. Overshoot: VIH(AC) < VDD +1.5 V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2 V (Pulse width less than tCYC/2).
15. TPower-up: Assumes a linear ramp from V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document Number: 001-94722 Rev. *E
Page 18 of 29
CY7C1441KV25
Electrical Characteristics (continued)
Over the Operating Range
Parameter [14, 15]
Description
Test Conditions
Min
Max
Unit
ISB1
Automatic CE Power Down
Current – TTL Inputs
Max VDD, Device Deselected,
VIN VIH or VIN VIL, f = fMAX,
Inputs Switching
7.5 ns cycle,
133 MHz
–
90
mA
ISB2
Automatic CE Power Down
Current – CMOS Inputs
Max VDD, Device Deselected,
7.5 ns cycle,
VIN VDD – 0.3 V or VIN 0.3 V, 133 MHz
f = 0, Inputs Static
–
80
mA
ISB3
Automatic CE Power Down
Current – CMOS Inputs
7.5 ns cycle,
Max VDD, Device Deselected,
VIN VDDQ – 0.3 V or VIN 0.3 V, 133 MHz
f = fMAX, Inputs Switching
–
90
mA
ISB4
Automatic CE Power Down
Current – TTL Inputs
7.5 ns cycle,
Max VDD, Device Deselected,
VIN VDD – 0.3 V or VIN 0.3 V, 133 MHz
f = 0, Inputs Static
–
80
mA
Capacitance
Parameter [16]
Description
165-ball FBGA Unit
Max
Test Conditions
TA = 25 C, f = 1 MHz,
VDD = 2.5 V, VDDQ = 2.5 V
CIN
Input capacitance
CCLK
Clock input capacitance
CI/O
Input/Output capacitance
5
pF
5
pF
5
pF
Thermal Resistance
Parameter [16]
JA
Description
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
JB
Thermal resistance
(junction to board)
165-ball FBGA Unit
Package
Test Conditions
Test conditions follow standard test With Still Air (0 m/s)
methods and procedures for
With Air Flow (1 m/s)
measuring thermal impedance,
per EIA/JESD51.
With Air Flow (3 m/s)
–
14.24
°C/W
12.47
°C/W
11.40
°C/W
3.92
°C/W
7.19
°C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
2.5 V I/O Test Load
2.5V
OUTPUT
R = 1667
Z0 = 50
VT = 1.25V
(a)
5 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50
GND
R = 1538
(b)
10%
90%
10%
90%
1 ns
2 V/ns
(c)
Note
16. Tested initially and after any design or process change that may affect these parameters.
Document Number: 001-94722 Rev. *E
Page 19 of 29
CY7C1441KV25
Switching Characteristics
Over the Operating Range
Parameter [17, 18]
tPOWER
Description
VDD(typical) to the first access [19]
-133
Unit
Min
Max
1
–
ms
Clock
tCYC
Clock cycle time
7.5
–
ns
tCH
Clock HIGH
2.5
–
ns
tCL
Clock LOW
2.5
–
ns
Output Times
tCDV
Data output valid after CLK rise
–
6.5
ns
tDOH
Data output hold after CLK rise
2.5
–
ns
2.5
–
ns
–
3.8
ns
–
3.0
ns
0
–
ns
–
3.0
ns
[20, 21, 22]
tCLZ
Clock to low Z
tCHZ
Clock to high Z [20, 21, 22]
tOEV
OE LOW to output valid
tOELZ
tOEHZ
OE LOW to output low Z
[20, 21, 22]
OE HIGH to output high Z
[20, 21, 22]
Setup Times
tAS
Address setup before CLK rise
1.5
–
ns
tADS
ADSP, ADSC setup before CLK rise
1.5
–
ns
tADVS
ADV setup before CLK rise
1.5
–
ns
tWES
GW, BWE, BWX setup before CLK rise
1.5
–
ns
tDS
Data input setup before CLK rise
1.5
–
ns
tCES
Chip enable setup
1.5
–
ns
tAH
Address hold after CLK rise
0.5
–
ns
tADH
ADSP, ADSC hold after CLK rise
0.5
–
ns
tWEH
GW, BWE, BWX hold after CLK rise
0.5
–
ns
tADVH
ADV hold after CLK rise
0.5
–
ns
tDH
Data input hold after CLK rise
0.5
–
ns
tCEH
Chip enable hold after CLK rise
0.5
–
ns
Hold Times
Notes
17. Timing reference level is 1.25 V when VDDQ = 2.5 V and 0.9 V.
18. Test conditions shown in (a) of Figure 3 on page 19 unless otherwise noted.
19. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation can
be initiated.
20. tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of Figure 3 on page 19. Transition is measured ±200 mV from steady-state voltage.
21. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data
bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
High Z prior to Low Z under the same system conditions.
22. This parameter is sampled and not 100% tested.
Document Number: 001-94722 Rev. *E
Page 20 of 29
CY7C1441KV25
Timing Diagrams
Figure 4. Read Cycle Timing [23]
tCYC
CLK
t
t ADS
CH
t CL
tADH
ADSP
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
t
GW, BWE,BW
WES
t
WEH
X
t CES
Deselect Cycle
t CEH
CE
t
ADVS
t
ADVH
ADV
ADV suspends burst
OE
t OEV
t OEHZ
t CLZ
Data Out (Q)
High-Z
Q(A1)
t CDV
t OELZ
t CHZ
t DOH
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
t CDV
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Burst wraps around
to its initial state
Single READ
BURST
READ
DON’T CARE
UNDEFINED
Note
23. In this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document Number: 001-94722 Rev. *E
Page 21 of 29
CY7C1441KV25
Timing Diagrams (continued)
Figure 5. Write Cycle Timing [24, 25]
t CYC
CLK
t
t ADS
CH
t
CL
tADH
ADSP
t ADS
ADSC extends burst
tADH
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
A3
Byte write signals are ignored for first cycle when
ADSP initiates burst
t WES tWEH
BWE,
BW
X
t
WES
t
WEH
GW
t CES
tCEH
CE
t ADVS tADVH
ADV
ADV suspends burst
OE
t
Data in (D)
High-Z
t
DS
t
DH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
OEHZ
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Notes
24. In this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
25. Full width write is initiated by either GW LOW; or by GW HIGH, BWE LOW, and BWX LOW.
Document Number: 001-94722 Rev. *E
Page 22 of 29
CY7C1441KV25
Timing Diagrams (continued)
Figure 6. Read/Write Cycle Timing [26, 27, 28]
tCYC
CLK
t
t ADS
CH
t
CL
tADH
ADSP
ADSC
t AS
ADDRESS
A1
tAH
A2
A3
A4
t
WES
t
A5
A6
WEH
BWE, BW X
t CES
tCEH
CE
ADV
OE
t DS
Data In (D)
Data Out (Q)
High-Z
t
OEHZ
Q(A1)
tDH
t OELZ
D(A3)
D(A5)
Q(A2)
Back-to-Back READs
D(A6)
t CDV
Q(A4)
Single WRITE
Q(A4+1)
BURST READ
DON’T CARE
Q(A4+2)
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes
26. In this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
27. The data bus (Q) remains in high Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.
28. GW is HIGH.
Document Number: 001-94722 Rev. *E
Page 23 of 29
CY7C1441KV25
Timing Diagrams (continued)
Figure 7. ZZ Mode Timing [29, 30]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes
29. Device must be deselected when entering ZZ mode. See Truth Table on page 8 for all possible signal conditions to deselect the device.
30. DQs are in high Z when exiting ZZ sleep mode.
Document Number: 001-94722 Rev. *E
Page 24 of 29
CY7C1441KV25
Ordering Information
Table 1 lists the ordering codes. The table contains only the parts that are currently available. If you do not see what you are looking
for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the
product summary page at http://www.cypress.com/products.
Table 1. Ordering Information
Speed (MHz)
133
Ordering Code
Package Diagram
Part and Package Type
Operating Range
51-85195
165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
lndustrial
CY7C1441KV25-133BZXI
Ordering Code Definitions
CY
7
C 144X K V25 - 133 BZ
X
I
Temperature Grade:
I = Industrial
Pb-free
Package Type:
BZ = 165-ball FBGA
Speed Grade: 133 MHz
V25 = 2.5 V
Process Technology: K > 65 nm
Part Identifier: 144X = 1441
1441 = FT, 1M × 36 (36Mb)
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-94722 Rev. *E
Page 25 of 29
CY7C1441KV25
Package Diagram
Figure 8. 165-ball FBGA ((15 × 17 × 1.40 mm) 0.50 Ball Diameter) Package Outline, 51-85195
51-85195 *D
Document Number: 001-94722 Rev. *E
Page 26 of 29
CY7C1441KV25
Acronyms
Document Conventions
Table 2. Acronyms Used in this Document
Units of Measure
Acronym
Description
Table 3. Units of Measure
CE
Chip Enable
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
EIA
Electronic Industries Alliance
MHz
megahertz
FBGA
Fine-Pitch Ball Grid Array
µA
microampere
I/O
Input/Output
mA
milliampere
JEDEC
Joint Electron Devices Engineering Council
mm
millimeter
JTAG
Joint Test Action Group
ms
millisecond
OE
Output Enable
mV
millivolt
SRAM
Static Random Access Memory
ns
nanosecond
TAP
Test Access Port
ohm
TCK
Test Clock
%
percent
TDI
Test Data-In
pF
picofarad
TDO
Test Data-Out
V
volt
TMS
Test Mode Select
W
watt
TTL
Transistor-Transistor Logic
Document Number: 001-94722 Rev. *E
Symbol
Unit of Measure
Page 27 of 29
CY7C1441KV25
Document History Page
Document Title: CY7C1441KV25, 36-Mbit (1M × 36) Flow-Through SRAM
Document Number: 001-94722
Revision
ECN
Orig. of
Change
Submission
Date
*B
4680529
PRIT
04/10/2015
Changed status from Preliminary to Final.
*C
4757974
DEVM
05/07/2015
Updated Functional Overview:
Updated ZZ Mode Electrical Characteristics:
Changed maximum value of IDDZZ parameter from 89 mA to 75 mA.
*D
5333501
PRIT
07/01/2016
Updated Truth Table.
Updated Neutron Soft Error Immunity:
Updated values in “Typ” and “Max” columns corresponding to LSBU parameter.
Updated to new template.
*E
6006641
AESATMP9
01/03/2018
Updated logo and copyright.
Document Number: 001-94722 Rev. *E
Description of Change
Page 28 of 29
CY7C1441KV25
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC®Solutions
Products
Arm® Cortex® Microcontrollers
Automotive
cypress.com/arm
cypress.com/automotive
Clocks & Buffers
Interface
cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
Cypress Developer Community
Community | Projects | Video | Blogs | Training | Components
Technical Support
cypress.com/support
cypress.com/pmic
Touch Sensing
cypress.com/touch
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2014-2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. No computing
device can be absolutely secure. Therefore, despite security measures implemented in Cypress hardware or software products, Cypress does not assume any liability arising out of any security breach,
such as unauthorized access to or use of a Cypress product. In addition, the products described in these materials may contain design defects or errors known as errata which may cause the product
to deviate from published specifications. To the extent permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any
liability arising out of the application or use of any product or circuit described in this document. Any information provided in this document, including any sample design information or programming
code, is provided only for reference purposes. It is the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this
information and any resulting product. Cypress products are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons
systems, nuclear installations, life-support devices or systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances
management, or other uses where the failure of the device or system could cause personal injury, death, or property damage ("Unintended Uses"). A critical component is any component of a device
or system whose failure to perform can be reasonably expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you
shall and hereby do release Cypress from any claim, damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from
and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-94722 Rev. *E
Revised January 3, 2018
Page 29 of 29
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