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STK14C88-5K45M

STK14C88-5K45M

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    CDIP32

  • 描述:

    IC NVSRAM 256KBIT PAR 32CDIP

  • 数据手册
  • 价格&库存
STK14C88-5K45M 数据手册
STK14C88 32 K x 8 AutoStore nvSRAM Features Description ■ 25 ns, 35 ns, and 45 ns read access and R/W cycle time The Cypress STK14C88 is a 256 Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. ■ Unlimited read/write endurance ■ Automatic nonvolatile STORE on power loss ■ Nonvolatile STORE under hardware or software control ■ Automatic RECALL to SRAM on power up ■ Unlimited RECALL cycles ■ 1-Million STORE cycles ■ 100-year nonvolatile data retention ■ Single 5 V + 10% power supply The Cypress nvSRAM is the first monolithic nonvolatile memory to offer unlimited writes and reads. It is the highest performance, most reliable nonvolatile memory available. ■ Commercial, industrial, military temperatures For a complete list of related documentation, click here. ■ 32-Pin 300 mil SOIC (RoHS-compliant) ■ 32-Pin CDIP and LCC packages The SRAM provides the fast access and cycle times, ease of use, and unlimited read and write endurance of a normal SRAM. Data automatically transfers to the nonvolatile storage cells when power loss is detected (the STORE operation). On power up, data is automatically restored to the SRAM (the RECALL operation). Both STORE and RECALL operations are also available under software control. Logic Block Diagram VCCX DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 POWER CONTROL STORE STATIC RAM ARRAY 512 x 512 STORE/ RECALL CONTROL RECALL SOFTWARE DETECT COLUMN I/O INPUT BUFFERS A5 A6 A7 A8 A9 A11 A12 A13 A14 ROW DECODER Quantum Trap 512 x 512 VCAP HSB A0 - A13 COLUMN DEC A0 A1 A2 A3 A4 A10 G E W Cypress Semiconductor Corporation Document Number: 001-52038 Rev. *F • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised March 31, 2015 STK14C88 Contents Pin Configurations ........................................................... 3 Pin Descriptions ............................................................... 3 Absolute Maximum Ratings ............................................ 4 DC Characteristics ........................................................... 4 AC Test Conditions .......................................................... 5 Capacitance ...................................................................... 5 SRAM Read Cycles #1 and #2 ......................................... 6 SRAM Write Cycle #1 and #2 ........................................... 7 Hardware Mode Selection................................................ 8 Hardware STORE Cycle ................................................... 8 AutoStore/Power up RECALL ......................................... 9 Software STORE/RECALL Mode Selection .................. 10 Software-Controlled STORE/RECALL Cycle................ 10 nvSRAM Operation......................................................... 11 Noise Considerations..................................................... 11 SRAM Read ..................................................................... 11 SRAM Write ..................................................................... 11 Power Up RECALL ......................................................... 11 Software Nonvolatile STORE......................................... 11 Software Nonvolatile RECALL ...................................... 11 Document Number: 001-52038 Rev. *F AutoStore Mode.............................................................. AutoStore INHIBIT Mode................................................ HSB Operation ................................................................ Best Practices................................................................. Preventing STORES ....................................................... Hardware Protect............................................................ Low Average Active Power............................................ Ordering Information...................................................... Commercial and Industrial Ordering Information....... Military Ordering Information ..................................... Package Diagrams.......................................................... Acronyms ........................................................................ Document Conventions ................................................. Units of Measure ....................................................... Document History Page ................................................ Sales, Solutions, and Legal Information ...................... Worldwide Sales and Design Support....................... Products .................................................................... PSoC Solutions ......................................................... 11 12 12 13 13 13 13 14 14 15 16 19 19 19 20 21 21 21 21 Page 2 of 21 STK14C88 Pin Configurations 27 A9 7 26 A11 8 25 NC A2 9 24 G NC 10 23 A10 A1 A0 11 22 12 21 E DQ7 DQ0 13 20 DQ1 DQ2 14 19 DQ6 DQ5 15 18 DQ4 VSS 16 17 DQ3 (TOP) W 6 HSB A5 A4 A3 A6 A13 A5 A8 A4 A3 A11 A9 NC G (TOP) A2 NC A1 A10 A0 E DQ0 DQ7 DQ6 5 W A13 A8 DQ5 A6 29 28 VCap 4 VCCx HSB 30 DQ4 31 3 DQ3 2 A12 A7 A14 A14 VSS VCC A7 32 DQ2 1 DQ1 VCAP Figure 2. Pin Diagram - 32-Pin 450 Mil LCC A12 Figure 1. Pin Diagram - 32-Pin 300 Mil SOIC/CDIP Pin Descriptions Pin Name I/O A14-A0 Input DQ7-DQ0 I/O E Input Chip Enable: The active low E input selects the device. W Input Write Enable: The active low W enables data on the DQ pins to be written to the address location latched by the falling edge of E. G Input Output Enable: The active low G input enables the data output buffers during read cycles. Deasserting G high caused the DQ pins to tristate. VCC HSB Description Address: The 15 address inputs select one of 32,768 bytes in the nvSRAM array. Data: Bidirectional 8-bit data bus for accessing the nvSRAM. Power Supply Power: 5.0 V +10%. I/O Hardware Store Busy: When low this output indicates a Store is in progress. When pulled low external to the chip, it initiates a nonvolatile STORE operation. A weak pull-up resistor keeps this pin high if not connected (optional connection). VCAP Power Supply AutoStore Capacitor: Supplies power to nvSRAM during power loss to store data from SRAM to nonvolatile storage elements. VSS Power Supply Ground. NC No Connect Unlabeled pins have no internal connections. Document Number: 001-52038 Rev. *F Page 3 of 21 STK14C88 Absolute Maximum Ratings Note Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Voltage on Input Relative to Ground...............–0.5 V to 7.0 V Voltage on Input Relative to VSS .........–0.6 V to (VCC + 0.5 V) Voltage on DQ0-7 or HSB ....................–0.5 V to (VCC + 0.5 V) Temperature under Bias ............................. –55 C to 125 C Storage Temperature .................................. –65 C to 150 C Power Dissipation............................................................ 1 W DC Output Current (1 output at a time, 1s duration).... 15 mA DC Characteristics Over the operating range (VCC = 5.0 V ± 10%)[4] Symbol Parameter Commercial Industrial/ Military Unit Notes Min Max Min Max Average VCC current – 97 80 70 – 100 85 70 mA mA mA tAVAV = 25 ns tAVAV = 35 ns tAVAV = 45 ns ICC2[2] Average VCC current during STORE – 3 – 3 mA All Inputs Don’t Care, VCC = max ICC3[1] Average VCC Current at tAVAV = 200 ns 5V, 25°C, Typical – 10 – 10 mA W  (V CC – 0.2 V) All others cycling, CMOS levels ICC4[2] Average VCAP current during AutoStore Cycle – 2 – 2 mA All Inputs Don’t Care ISB1[3] Average VCC current (Standby, Cycling TTL Input Levels) – 30 25 22 – 31 26 23 mA mA mA tAVAV = 25 ns, E  VIH tAVAV = 35 ns, E  VIH tAVAV = 45 ns, E  VIH ISB2[3] VCC Standby current (Standby, Stable CMOS Input Levels) – 1.5 – 1.5 mA E  (V CC – 0.2 V) All Others VIN  0.2 V or  (VCC – 0.2 V) IILK Input Leakage current – 1 – 1 A VCC = max VIN = VSS to VCC IOLK Off-State output leakage current – 5 – 5 A VCC = max VIN = VSS to VCC, E or G VIH VIH Input Logic “1” voltage 2.2 VCC + 0.5 2.2 VCC +0.5 V All inputs VIL Input Logic “0” voltage VSS – .5 0.8 VSS – .5 0.8 V All inputs VOH Output Logic “1” voltage 2.4 – 2.4 – V IOUT = – 4 mA except HSB VOL Output Logic “0” voltage – 0.4 – 0.4 V IOUT = 8 mA except HSB VBL Logic “0” voltage on HSB output – 0.4 – 0.4 V IOUT = 3 mA TA Operating temperature 0 70 –40/–55 85/125 C ICC1 [1] Notes 1. ICC1 and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded. 2. ICC2 and ICC4 are the average currents required for the duration of the respective STORE cycles (tSTORE). 3. E  VIH does not produce standby current levels until any nonvolatile cycle in progress has timed out. 4. VCC reference levels throughout this datasheet refer to VCC if that is where the power supply connection is made, or VCAP if VCC is connected to ground. Document Number: 001-52038 Rev. *F Page 4 of 21 STK14C88 AC Test Conditions Input pulse levels.................................................... 0 V to 3 V Input rise and fall times ...............................................
STK14C88-5K45M 价格&库存

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