| IPT2508-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2506-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2506-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-DEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1606-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1606-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1606-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1606-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1606-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1606-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-TEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-TEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-BEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1206-TEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1206-TEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1206-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1206-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1206-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1206-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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