| IPT0408-10D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-10A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS825-40B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS825-40B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS812-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS812-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS808-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS808-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS620-30B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS608-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS608-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-08D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-08D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-03I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-03I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CS2N60A4H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):4Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CR7N65A4K | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):7A;功率(Pd):108W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):24nC@10V;输入电容(Ciss@Vds):1.08nF@25V;反向传输电容(Crss@Vds):3.2pF@25V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CR4N60A4K | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST085N15N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):120A;功率(Pd):227W;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):4.217nF@75V;反向传输电容(Crss@Vds):38pF@75V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CRSD082N10L2 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):78A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):8.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):2.2V@250uA; | | | 获取价格 |
| CRJQ80N65F | Wuxi China Resources Microelectronics Limited | MOSFETs N-CH 650V 43A 77mΩ TO247-3L | | | 获取价格 |
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