| IPT0806-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-DED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-DED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-AED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-AED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-SEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-SEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-DEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-DEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-AEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-AEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-AEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-AEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-35D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-10I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-10B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-35D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-25F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-25F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0106-XXU | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0106-XXU - suitable for low power AC Switching application - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS820-30F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS820-30F - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS820-30B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS820-30B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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