| KC2802-26-08Z1-08 | KEC[KEC(KoreaElectronics)] | KC2802-26-08Z1-08 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| KC2802-26-08J1-25 | KEC[KEC(KoreaElectronics)] | KC2802-26-08J1-25 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| KC2802-26-08J1-08 | KEC[KEC(KoreaElectronics)] | KC2802-26-08J1-08 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| KC2801-26-10J1-25 | KEC[KEC(KoreaElectronics)] | KC2801-26-10J1-25 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| KC2801-26-08Z1-18 | KEC[KEC(KoreaElectronics)] | KC2801-26-08Z1-18 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| KC2801-26-08J1-25 | KEC[KEC(KoreaElectronics)] | KC2801-26-08J1-25 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| KC2801-26-08J1-18 | KEC[KEC(KoreaElectronics)] | KC2801-26-08J1-18 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| KC2801-22-10Z1-08 | KEC[KEC(KoreaElectronics)] | KC2801-22-10Z1-08 - EMC CIRCULAR BACKSHEELS - KEC(Korea Electronics) | | | 获取价格 |
| TO-92M | KEC[KEC(KoreaElectronics)] | TO-92M - SEMICONDUCTOR PACKAGE DIMENSION - KEC(Korea Electronics) | | | 获取价格 |
| B1366 | KEC[KEC(KoreaElectronics)] | B1366 - TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE) - KEC(Korea Electronics) | | | 获取价格 |
| B10A60VIC | KEC[KEC(KoreaElectronics)] | B10A60VIC - TO-220IS PACKAGE - KEC(Korea Electronics) | | | 获取价格 |
| B10A45VIC_07 | KEC[KEC(KoreaElectronics)] | B10A45VIC_07 - SCHOTTKY BARRIER TYPE DIODE - KEC(Korea Electronics) | | | 获取价格 |
| B10A100VIC_05 | KEC[KEC(KoreaElectronics)] | B10A100VIC_05 - TO-220IS PACKAGE - KEC(Korea Electronics) | | | 获取价格 |
| B10A100VIC | KEC[KEC(KoreaElectronics)] | B10A100VIC - TO-220IS PACKAGE - KEC(Korea Electronics) | | | 获取价格 |
| TL431F | KEC[KEC(KoreaElectronics)] | TL431F - BIPOLAR LINEAR INTEGRATED CIRCUIT - KEC(Korea Electronics) | | | 获取价格 |
| BZX84C5V1-V | KEC[KEC(KoreaElectronics)] | BZX84C5V1-V - SILICON EPITAXIAL PLANAR DIODE - KEC(Korea Electronics) | | | 获取价格 |
| BZX84C3V6-V | KEC[KEC(KoreaElectronics)] | BZX84C3V6-V - SILICON EPITAXIAL PLANAR DIODE - KEC(Korea Electronics) | | | 获取价格 |
| BZX84C2V0-V | KEC[KEC(KoreaElectronics)] | BZX84C2V0-V - SILICON EPITAXIAL PLANAR DIODE - KEC(Korea Electronics) | | | 获取价格 |
| KTC1006-AT--P | KEC CORPORATION | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;特征频率(fT):-; | | | 获取价格 |
| KTA1042D-Y-RTF--P | KEC CORPORATION | 晶体管类型:-;集射极击穿电压(Vceo):100V;集电极电流(Ic):5A;功率(Pd):20W;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):2V@4A,400mA;直流电流增益(hFE@Ic,Vce):70@1A,5V;特征频率(fT):30MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
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