| BC857B,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):220@2mA,5V; | | | 获取价格 |
| BC856,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):65V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):125@2mA,5V; | | | 获取价格 |
| PBSS4240T,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):250@2A,2V; | | | 获取价格 |
| PBSS5320T,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):20V;集电极电流(Ic):2A;功率(Pd):1.2W;直流电流增益(hFE@Ic,Vce):200@1A,2V; | | | 获取价格 |
| BSR19A,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):160V;集电极电流(Ic):300mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):80@10mA,5V; | | | 获取价格 |
| BC846A,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):65V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):110@2mA,5V; | | | 获取价格 |
| PMBT2369,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):15V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):40@10mA,1V; | | | 获取价格 |
| BC847,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):110@2mA,5V; | | | 获取价格 |
| PBSS4140T,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):1A;功率(Pd):450mW; | | | 获取价格 |
| MMBT2222A,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,10V; | | | 获取价格 |
| PMV48XP,215 | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):3.5A;功率(Pd):510mW;导通电阻(RDS(on)@Vgs,Id):55mΩ@4.5V,2.4A; | | | 获取价格 |
| CJK3400A | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.8A;功率(Pd):450mW;导通电阻(RDS(on)@Vgs,Id):32mΩ@10V,5.8A; | | | 获取价格 |
| PMV65XP,215 | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):480mW;导通电阻(RDS(on)@Vgs,Id):74mΩ@4.5V,2.8A; | | | 获取价格 |
| BSH201,215 | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):417mW;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,160mA; | | | 获取价格 |
| BSS138P,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):360mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,300mA; | | | 获取价格 |
| BSH103,235 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):850mA;功率(Pd):540mW;导通电阻(RDS(on)@Vgs,Id):400mΩ@4.5V,500mA; | | | 获取价格 |
| BCX70H,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):180@2mA,5V; | | | 获取价格 |
| NX7002BKR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):270mA;功率(Pd):310mW；1.67W;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,200mA; | | | 获取价格 |
| PMBTA42,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):40@30mA,10V; | | | 获取价格 |
| PMV25ENEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.5A;功率(Pd):460mW；6.94W;导通电阻(RDS(on)@Vgs,Id):24mΩ@10V,5.5A; | | | 获取价格 |
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