| BCW71,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):110@2mA,5V; | | | 获取价格 |
| BCW72,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2mA,5V; | | | 获取价格 |
| BCX71H,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):180@2mA,5V; | | | 获取价格 |
| PBHV9050T,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):500V;集电极电流(Ic):150mA;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):80@50mA,10V; | | | 获取价格 |
| BF840,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):25mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):67@1mA,10V; | | | 获取价格 |
| BC806-16R | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,2V; | | | 获取价格 |
| BC807-25LVL | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):160@100mA,1V; | | | 获取价格 |
| BC817K-16HVL | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):425mW;直流电流增益(hFE@Ic,Vce):100@100mA,1V; | | | 获取价格 |
| BC846B,235 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):65V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2mA,5V; | | | 获取价格 |
| BC849B,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2mA,5V; | | | 获取价格 |
| BC857B,235 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):220@2mA,5V; | | | 获取价格 |
| BCW61B,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):32V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):180@2mA,5V; | | | 获取价格 |
| BCW66HVL | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):800mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):250@100mA,1V; | | | 获取价格 |
| 2PD601ARL,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):210@2mA,10V; | | | 获取价格 |
| 2PD601ART,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):210@2mA,10V; | | | 获取价格 |
| BC857C,235 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):420@2mA,5V; | | | 获取价格 |
| CJK2333 | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):12V;连续漏极电流(Id):6A;功率(Pd):400mW;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,5A; | | | 获取价格 |
| PMV48XPAR | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):3.5A;功率(Pd):510mW；4.15W;导通电阻(RDS(on)@Vgs,Id):55mΩ@2.4A,4.5V; | | | 获取价格 |
| PBSS4350TVL | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):540mW;直流电流增益(hFE@Ic,Vce):300@1A,2V; | | | 获取价格 |
| PBSS5250T,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):200@1A,2V; | | | 获取价格 |
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