| PMV19XNEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):610mW；8.3W;导通电阻(RDS(on)@Vgs,Id):24mΩ@6A,4.5V; | | | 获取价格 |
| PMV280ENEA | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| PMV65XPER | Rubycon Corporation | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):480mW；6.25W;导通电阻(RDS(on)@Vgs,Id):78mΩ@2.8A,4.5V; | | | 获取价格 |
| PMBT3906,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10mA,1V; | | | 获取价格 |
| MMBT2907A | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):600mA;功率(Pd):225mW; | | | 获取价格 |
| BC807-25,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@100mA,1V; | | | 获取价格 |
| BC847B,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2mA,5V; | | | 获取价格 |
| PMBS3906,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):100mA;功率(Pd):250mW; | | | 获取价格 |
| PBSS4032PT | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):2.4A;功率(Pd):390mW;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):220mV@2A,200mA;直流电流增益(hFE@Ic,Vce):230@1A,2V;特征频率(fT):160MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
| BC807,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@100mA,1V; | | | 获取价格 |
| BFS20,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):20V;集电极电流(Ic):25mA;功率(Pd):250mW; | | | 获取价格 |
| PMMT591A,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):1A;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):300@100mA,5V; | | | 获取价格 |
| BC817,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@100mA,1V; | | | 获取价格 |
| BC846,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):65V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):110@2mA,5V; | | | 获取价格 |
| PBSS9110T,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):150@500mA,5V; | | | 获取价格 |
| BC858B,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):220@2mA,5V; | | | 获取价格 |
| BSN20BKR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):265mA;功率(Pd):310mW;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,200mA; | | | 获取价格 |
| PMV40UN2R | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3.7A;功率(Pd):490mW;导通电阻(RDS(on)@Vgs,Id):44mΩ@4.5V,3.7A; | | | 获取价格 |
| PMV213SN,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):1.9A;功率(Pd):280mW;导通电阻(RDS(on)@Vgs,Id):250mΩ@10V,500mA; | | | 获取价格 |
| BSS138 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):50V;连续漏极电流(Id):220mA;功率(Pd):360mW;导通电阻(RDS(on)@Vgs,Id):3.5Ω@10V,220mA; | | | 获取价格 |
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