| 2N7002BK,215 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):350mA;功率(Pd):370mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,500mA; | | | 获取价格 |
| PMBTA92,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):25@30mA,10V; | | | 获取价格 |
| PBSS4230T,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):300@1A,2V; | | | 获取价格 |
| PMV100ENEAR | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3A;功率(Pd):460mW；4.5W;导通电阻(RDS(on)@Vgs,Id):72mΩ@3A,10V; | | | 获取价格 |
| PMV45EN2R | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.1A;功率(Pd):510mW；5W;导通电阻(RDS(on)@Vgs,Id):42mΩ@10V,4.1A; | | | 获取价格 |
| BF820,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):50mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):50@25mA,20V; | | | 获取价格 |
| CJK8804 | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-; | | | 获取价格 |
| 2PD602ASL,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):170@150mA,10V; | | | 获取价格 |
| BC817K-25H,235 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):425mW;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):700mV@500mA,50mA;直流电流增益(hFE@Ic,Vce):160@100mA,1V;特征频率(fT):100MHz;工作温度:+175℃@(Tj); | | | 获取价格 |
| BF570,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):15V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):40@10mA,1V; | | | 获取价格 |
| PMBT2907,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@150mA,10V; | | | 获取价格 |
| PMBTA56,235 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@100mA,1V; | | | 获取价格 |
| BC807K-40R | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):250@100mA,1V; | | | 获取价格 |
| BCW32,215 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):32V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2mA,5V; | | | 获取价格 |
| BCX70J,235 | Rubycon Corporation | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):250@2mA,5V; | | | 获取价格 |
| PBSS5230T,215 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):200@1A,2V; | | | 获取价格 |
| PBLS6024D,115 | Rubycon Corporation | 晶体管类型:1个PNP-预偏置;功率(Pd):480mW;集电极电流(Ic):100mA；1.5A;集射极击穿电压(Vceo):50V；60V; | | | 获取价格 |
| PMN30XP,115 | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| PMN52XPX | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| PMN50EPEX | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
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