| AO3402-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6.5A; | | | 获取价格 |
| AP2310GN-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):85mΩ@10V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| BSN20-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):250mA;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):2.8Ω@10V,0.25A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AO3419-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-20V;连续漏极电流(Id):-5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@-4.5V,-5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| SI2302DS-T1-GE3-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):2.1W;导通电阻(RDS(on)@Vgs,Id):28mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):1V@250uA;栅极电荷(Qg@Vgs):8.8nC@4.5V;输入电容(Ciss@Vds):865pF@10V;反向传输电容(Crss@Vds):55pF@10V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| VB1240B | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):7A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,7A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IM2132-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| APM2701ACC-TRG-VB | VBsemi Electronics Co. Ltd | 类型:N+P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@4.5V,4.2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRF5805TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,4.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NTGD3148NT1G-VB | VBsemi Electronics Co. Ltd | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AP2625GY-VB | VBsemi Electronics Co. Ltd | 类型:2个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):75mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| FDC6306P-VB | VBsemi Electronics Co. Ltd | 类型:2个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):75mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| VBFB165R04 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):2Ω@10V,4.5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AOD484-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NTD24N06LT4G-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):25mΩ@10V,35A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRLR3110ZPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):85A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):7.5mΩ@10V,85A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| SUD50P06-15L-GE3-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRFR5305TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRF7103TRPBF-VB | VBsemi Electronics Co. Ltd | MOSFETs 2个N沟道 耐压:60V 电流:7A SO-8 | | | 获取价格 |
| FDN5630-NL-VB | VBsemi Electronics Co. Ltd | MOSFETs N沟道 耐压:60V 电流:4A SOT-23 | | | 获取价格 |
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