| STU606S-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| IRFR3708TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,80A; | | | 获取价格 |
| 20N06HD-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;导通电阻(RDS(on)@Vgs,Id):25mΩ@10V,35A; | | | 获取价格 |
| ME85P03-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;导通电阻(RDS(on)@Vgs,Id):9mΩ@10V,80A; | | | 获取价格 |
| CMD50P06-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,50A; | | | 获取价格 |
| VBL2309 | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):75A;功率(Pd):250W;导通电阻(RDS(on)@Vgs,Id):8mΩ@10V,75A;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| VBL165R18 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):18A;功率(Pd):208W;导通电阻(RDS(on)@Vgs,Id):360mΩ@10V,11A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| VBL165R04 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):2.1Ω@10V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| MT2300ACTR-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):2.1W;导通电阻(RDS(on)@Vgs,Id):28mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):1V@250uA;栅极电荷(Qg@Vgs):8.8nC@4.5V;输入电容(Ciss@Vds):865pF@10V;反向传输电容(Crss@Vds):55pF@10V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| NTR4502PT1G-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=5.4A RDS(ON)=54mΩ@4.5V SOT23 | | | 获取价格 |
| SI2305CDS-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| DMP3099L-7-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-30V;连续漏极电流(Id):-5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@-10V,-5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AO3415-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| 2SJ168-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):500mA;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):3Ω@10V,0.5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AP2310N-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):85mΩ@10V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRLML6401GTRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| SI2333DS-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| FDV301N-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±12V ID=5A RDS(ON)=28mΩ@4.5V SOT23 | | | 获取价格 |
| 2N7002KB-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT23 | | | 获取价格 |
| DMC2038LVT-7-F-VB | VBsemi Electronics Co. Ltd | 类型:1个N沟道和1个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@4.5V,4.2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
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