| VB1101M | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=100V VGS=±20V ID=3.6A RDS(ON)=141mΩ@4.5V SOT23 | | | 获取价格 |
| VB264K | VBsemi Electronics Co. Ltd | Vds=60V Id=185mA SOT-23-3 | | | 获取价格 |
| 2SK2232-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| VBJ1201K | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):1A;功率(Pd):3.1W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,580mA;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| IRFZ48NS-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):60A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,60A; | | | 获取价格 |
| PZ0703ED-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| RJE0605JPD-00-J3-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-;连续漏极电流(Id):-25A;导通电阻(RDS(on)@Vgs,Id):53mΩ@-10V,-25A; | | | 获取价格 |
| CEU6086-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):97A;导通电阻(RDS(on)@Vgs,Id):6.3mΩ@10V,97A; | | | 获取价格 |
| IRLR7843TRPBF&-2-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;导通电阻(RDS(on)@Vgs,Id):2mΩ@10V,100A; | | | 获取价格 |
| VBE1102M | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):20A;导通电阻(RDS(on)@Vgs,Id):200mΩ@10V,20A; | | | 获取价格 |
| FQD17P06-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| SUD70N03-04P-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;导通电阻(RDS(on)@Vgs,Id):2mΩ@10V,100A; | | | 获取价格 |
| FDD8770-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):65A;导通电阻(RDS(on)@Vgs,Id):6mΩ@4.5V,65A; | | | 获取价格 |
| AP18P10GH-HF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):20A;导通电阻(RDS(on)@Vgs,Id):100mΩ@10V,20A; | | | 获取价格 |
| IRFR3607TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):80V;连续漏极电流(Id):75A;导通电阻(RDS(on)@Vgs,Id):5.5mΩ@10V,75A; | | | 获取价格 |
| RU3560L-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):55A;导通电阻(RDS(on)@Vgs,Id):13mΩ@10V,55A; | | | 获取价格 |
| VBL1603 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):210A;功率(Pd):375W;导通电阻(RDS(on)@Vgs,Id):12mΩ@4.5V,20A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| VBL2610N | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):30A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):64mΩ@10V,30A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| NTR0202PLT1G-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):2.5W;导通电阻(RDS(on)@Vgs,Id):35mΩ@10V,5.1A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):6.4nC@2.5V;输入电容(Ciss@Vds):835pF@10V;反向传输电容(Crss@Vds):155pF@10V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| AO3414-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):28mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
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