| SI1967DH-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOS管 Dual P-Channel VDS=20V VGS=±12V ID=1.6A RDS(ON)=155mΩ@4.5V SC-70-6 | | | 获取价格 |
| NTR4170NT1G-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33mΩ@4.5V SOT23 | | | 获取价格 |
| NDS331N-NL-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±12V ID=5A RDS(ON)=28mΩ@4.5V SOT23 | | | 获取价格 |
| IRLR024NTRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=16.9A RDS(ON)=83mΩ@4.5V TO252 | | | 获取价格 |
| IRLML5203TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=5.4A RDS(ON)=54mΩ@4.5V SOT23 | | | 获取价格 |
| IRLML2244TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V ID=4.5A SOT-23 | | | 获取价格 |
| FDN340P-NL-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| FDC602P-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=4A RDS(ON)=54mΩ@4.5V TSOP6 | | | 获取价格 |
| AO3460-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT23 | | | 获取价格 |
| AO3404-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33mΩ@4.5V SOT23 | | | 获取价格 |
| FQD13N06-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| AP9575GM-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):50mΩ@10V,8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| FQT5P10-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| APM2309AC-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AM2308N-T1-PF-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| AOD482-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| SI9948AEY-T1-E3-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| 2SK2232-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| VBJ1201K | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):1A;功率(Pd):3.1W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,580mA;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| IRFZ48NS-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):60A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,60A; | | | 获取价格 |
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