| STN3NF06L-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=6A RDS(ON)=33mΩ@4.5V SOT223 | | | 获取价格 |
| SI4435DY-T1-E3-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=7A RDS(ON)=24mΩ@4.5V SOP-8 | | | 获取价格 |
| Si2338DS-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33mΩ@4.5V SOT23 | | | 获取价格 |
| SI2305ADS-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| SI2301DS-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=20V VGS=±12V ID=4.5A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| NTD25P03LG-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=12.9A RDS(ON)=46mΩ@4.5V TO252 | | | 获取价格 |
| IRF7341TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 Dual N-Channel VDS=60V VGS=±20V ID=7A RDS(ON)=30mΩ@4.5V SOP-8 | | | 获取价格 |
| FDN337N-NL-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=43mΩ@4.5V SOT23 | | | 获取价格 |
| BS170FTA-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT23 | | | 获取价格 |
| AP2306N-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±12V ID=5A RDS(ON)=28mΩ@4.5V SOT23 | | | 获取价格 |
| AO4606-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel, P-Channel VDS=30V VGS=±20V ID=6.8A,6.6A SOIC8_150MIL | | | 获取价格 |
| AO3422-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=3.1A RDS(ON)=86mΩ@4.5V SOT23 | | | 获取价格 |
| IRLML0060TRPBF-VB | VBsemi Electronics Co. Ltd | MOSFETs 1个N沟道 耐压:60V 电流:4A SOT-23 | | | 获取价格 |
| HM4410-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):13A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):8mΩ@10V,13A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| FDS6982AS-NL-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| AOD403-VB | VBsemi Electronics Co. Ltd | AOD403-VB | | | 获取价格 |
| 2SJ327-Z-E1-AZ-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
| CEM9956A-VB | VBsemi Electronics Co. Ltd | 类型:2个N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@10V,6.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AO4816-VB | VBsemi Electronics Co. Ltd | 类型:2个N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):7.2A;功率(Pd):2W;导通电阻(RDS(on)@Vgs,Id):16mΩ@10V,8A; | | | 获取价格 |
| AM2305PE-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.4A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):55mΩ@10V,4.4A; | | | 获取价格 |
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