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GBU810

GBU810

  • 厂商:

    EIC

  • 封装:

  • 描述:

    GBU810 - Glass Passivated - EIC discrete Semiconductors

  • 数据手册
  • 价格&库存
GBU810 数据手册
GBU8005 ~ GBU810 PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * Surge overload rating - 200 Amperes peak * Ideal for printed circuit boards * Reliable low cost construction utilizing molded plastic technique * Plastic material has Underwriters Laboratory Flammability Classification 94V-0 * Mounting Position : Any * Pb / RoHS Free Glass Passivated Single-Phase Bridge Rectifiers 0.88 (22.3) 0.86 (21.8) 0.740 (18.8) 0.720 (18.3) 0.310 (7.9) 0.290 (7.4) 0.085 (2.16) 0.065 (1.65) 0.100 (2.54) 0.850 (2.16) 0.080 (2.03) 0.065 (1.65) 0.187 (4.7) 0.148 (3.8) o 9 Typ. ~~+ 0.210 0.190 (5.33) (4.83) 0.210 0.190 (5.33) (4.83) 0.210 0.190 (5.33) (4.83) Dimensions in inches and ( millimeter ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current Tc=100°C (with heatsink note2) (without heatsink ) SYMBOL VRRM VRMS VDC IF(AV) IFSM I2 t VF IR IR(H) CJ RθJC TJ TSTG TJ = 25 °C TJ = 100 °C GBU 8005 50 35 50 GBU 801 100 70 100 GBU 802 200 140 200 GBU 804 400 280 400 8.0 3.2 200 166 1.0 5.0 500 60 2.2 GBU 806 600 420 600 0.080 (2.03) 0.060 (1.52) GBU 808 800 560 800 0.720 (18.29) 0.680 (17.27) 0.060 (1.52) 0.045 (1.14) GBU 810 1000 700 1000 UNIT V V V A A A2S V µA pF °C/W °C °C Peak Forward Surge Current, 8.3ms Single half sinewave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.3 ms. ) Maximum Instantaneous Forward Voltage at IF = 4 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range Typical Junction capacitance per element (Note1) - 50 to + 150 - 50 to + 150 Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC (2) Device mounted on 100mm x 100mm x 1.6mm Cu. Plate heatsink. Page 1 of 2 Rev. 02 : March 25, 2005 R ATING AND CHARACTERISTIC CURVES ( GBU8005 - GBU810 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 8.0 200 w ith heatsink FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES 175 150 125 100 75 50 25 0 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 1 2 4 6 10 20 40 60 100 6.0 without heatsink 4.0 2.0 Single phase have 60 Hz, Resistive or inductive load. 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES T J = 1 00 ° C INSTANTANEOUS FORWARD CURRENT, AMPERES 10 10 1.0 1.0 T J = 25 °C T J = 25 °C 0.1 Pulse W idth = 300 µ s 1 % Duty Cycle 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 .4 06 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS P age 2 of 2 R ev. 02 : March 25, 2005
GBU810 价格&库存

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GBU810
  •  国内价格
  • 1+0.7
  • 30+0.675
  • 100+0.65
  • 500+0.6
  • 1000+0.575
  • 2000+0.56

库存:279

GBU810
  •  国内价格
  • 1+1.43551
  • 30+1.38601
  • 100+1.28701
  • 500+1.188
  • 1000+1.1385

库存:13

GBU810
  •  国内价格
  • 1+1.05001
  • 30+1.01251
  • 100+0.97501
  • 500+0.9
  • 1000+0.8625
  • 2000+0.84

库存:245

GBU810A
  •  国内价格
  • 1+1.66608
  • 10+1.53792
  • 30+1.51229
  • 100+1.43539

库存:20