25 -10V 20 -4.5V -3V
10 Vds=-5V 8
-Id (A)
-2.5V 10
-Id (A)
15
6 125°C
4
5
Vgs=-2V
2
25°C
0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 120
0 0 0.5 1 1.5 2 2.5 3 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6
100 Vgs=-2.5V
Normalized On-Resistance
1.4
Id=-5A Vgs=-4.5V Vgs=-10V
Rds(on) (m : )
80
1.2
Vgs=-2.5V Id=-2A
60 40
Vgs=-4.5V
1
Vgs=-10V 20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
190 170 150 Id=-2A
1.0E+01 1.0E+00 1.0E-01 125°C
Rds(on) (m : )
130
-Is (A)
125°C
110 90 70 50 30 25°C
1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05
1.0E-06 10 HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.0 0.2 0.4 0.6 1.0 0 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME0.8 LIABILITY1.2 S 2 4 6 8 10 OMPONENTS ANY ARI -Vsd (Volts) -Vgs (Volts) UT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Figure 6: Body-Diode Characteristics UNCTIONS Figure 5: On-Resistance vs. Gate-Source Voltage AND RELIABILITY WITHOUT NOTICE.
5 Vds=-15V Id=-4A 4
1400 1200
Capacitance (pF)
1000 800 600 400 Coss 200 Crss Ciss
-Vgs (Volts)
3
2
1
0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics
100.0
Tj(max)=150°C Ta=25°C Rds(on) limited 100 Ps 1ms 0.1s 10ms 10 Ps
40 Tj(max)=150°C Ta=25°C 30
-Id (Amps)
Power (W)
10.0
20
1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk =Ta+Pdm.ZTja .RTja RTja =90°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 Ton T Single Pulse
0.01 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.00001 0.0001 0.001 0.01 1 100 1000 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT0.1 AUTHORIZED. AOS DOES 10 NOT ASSUME ANY LIABILITY ARIS OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. PulseRESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, AOS Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10 125°C
250 f = 1MHz
1
200
Capacitance (pF)
25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2
If (Amps)
150
0.1
100
0.01
50
0.001 0 0 15 20 25 30 Vka (Volts) Figure 13: Schottky Capacitance Characteristics 5 10 Vf (Volts) Figure 12: Schottky Forward Characteristics
0.7 0.6 0.5
100 If=3A 10 1 Vr=30V 0.1 0.01 0.001 0 25 50 75 100 125 Temperature (°C) 150 175 0 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature
0.4 If=1A 0.3 0.2 0.1
Figure 14: Schottky Forward Drop vs. Junction Temperature 10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk =Ta+Pdm.ZTja .RTja RTja =90°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Leakage Current (mA)
Vf (Volts)
0.1
Pd Ton Single Pulse T
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
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