ELM7S32B

ELM7Sxx,ELM7SxxB SERIES ■ GENERAL DESCRIPTION CMOS LOGIC IC ・ELM7Sxx,ELM7SxxB Series are CMOS ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ・ELM7S66,ELM7S66B are CMOS analog switches. They realize a high speed operation with a low power consumption by CMOS features. With a low on resistance and a high transmission rate, they realize a wider input voltage range. ■ FEATURES ・ Very small SOT-25 (2.9 × 1.6 × 1.1mm) 5 - pin package SOT-26 (2.9 × 1.6 × 1.1mm) 6 - pin package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ SERIES Function NAND VCC AND VCC NOR VCC OR VCC D iagram (TOP VIEW) GND GND GND GND P roduct F unction ELM7S00 ELM7S00B INV VCC ELM7S08 ELM7S08B UNB. INV VCC ELM7S02 ELM7S02B UNB. INV×2 ELM7S32 ELM7S32B EX OR VCC D iagram (TOP VIEW) VCC GND GND GND GND P roduct F unction ELM7S04 ELM7S04B ANALOG SW VCC ELM7SU04 ELM7SU04B SMT. INV VCC ELM7SU04W ELM7SU04BW ELM7S86 ELM7S86B D iagram (TOP VIEW) GND GND P roduct ELM7S66 ELM7S66B ELM7S14 ELM7S14B 13 ELM7Sxx,ELM7SxxB ■ SELECTION GUIDE Symbol 00 08 02 32 Function 04 U04 86 66 14 NAND AND NOR OR INV UNB.INV EX OR Analog SW SMT. INV SERIES CMOS LOGIC ELM7S x x : Sn/Pb ↑↑ ↑↑ ab E L M 7 S x x B : Pb-Free a,b ↑↑ ↑↑ ab 14 ELM7S00,ELM7S00B ■ DESCRIPTION 2-input NAND Gate ELM7S00,ELM7S00B are CMOS 2-input NAND gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX High High High Low ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E 1 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S00, ELM7S00B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 15 CMOS LOGIC IC ELM7S00,ELM7S00B 2-input NAND Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Sym. VCC 2.0 VIH 4.5 6.0 2.0 VIL 4.5 6.0 2.0 4.5 VOH 6.0 4.5 6.0 2.0 4.5 VOL 6.0 4.5 6.0 IIN 6.0 ICC 6.0 Top = 25℃ Top = -40∼+85℃ Min. Typ. Ma x. Min. Ma x. Units Conditions 1.5 1.5 3.15 3.15 V 4.2 4.2 0.5 0.5 1.35 1.35 V 1.8 1.8 1.9 2.0 1.9 VIN= 4.4 4.5 4.4 VIH IOH = -20μA 5.9 6.0 5.9 V or 4.18 4.36 4.13 VIL IOH = -2mA 5.68 5.84 5.63 IOH = -2.6mA 0.0 0.1 0.1 VIN= 0.0 0.1 0.1 VIH IOL = 20μA 0.0 0.1 0.1 V 0.11 0.26 0.33 IOL = 2mA 0.13 0.26 0.33 IOL = 2.6mA -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 Conditions Refer to following test circuit Refer to following test circuit 16 CMOS LOGIC IC ELM7S00,ELM7S00B 2-input NAND Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 18 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 14 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 16 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 16 100 125 tPHL 4.5 6 20 25 ns 6.0 5 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC OUTPUT P uls e O s c ill a t o r IN P U T CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% INPUT 10% 90% 50% 10% GND tTHL OUTPUT 90% 50% 10% 10% tTLH 90% 50% VOL VOH tPHL tPLH 17 ELM7S08,ELM7S08B ■ DESCRIPTION 2-input AND Gate ELM7S08,ELM7S08B are CMOS 2-input AND gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX Low Low Low High ■ MARKING SOT-25 ①②③ No. ① ② ③ Mark E 2 A∼M (excepted I) Contents ELM7Sxx, ELM7Sxx series ELM7S08, ELM7S08B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 18 CMOS LOGIC IC ELM7S08,ELM7S08B 2-input AND Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V 4.5 4.18 4.36 4.13 IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V or 4.5 0.12 0.26 0.33 VIL IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 4 15 ns 5 15 Conditions Refer to following test circuit Refer to following test circuit 19 CMOS LOGIC IC ELM7S08,ELM7S08B 2-input AND Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 21 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 18 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 16 100 125 tPLH 4.5 6 20 25 ns 6.0 5 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 8 20 25 ns 6.0 7 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC OUTPUT Pulse Oscillator 50Ω INPUT CL * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% 90% 50% 10% INPUT 10% tPLH tPHL 90% 50% 10% 10% GND 90% 50% VOH OUTPUT VOL tTLH tTHL 20 ELM7S02,ELM7S02B ■ DESCRIPTION 2-input NOR Gate ELM7S02,ELM7S02B are CMOS 2-input NOR gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX High Low Low Low ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E 3 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S02, ELM7S02B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 21 CMOS LOGIC IC ELM7S02,ELM7S02B 2-input NOR Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIL IOH = -20μA VOH 6.0 5.9 6.0 5.9 V 4.5 4.18 4.35 4.13 IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V or 4.5 0.12 0.26 0.33 VIL IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 22 CMOS LOGIC IC ELM7S02,ELM7S02B 2-input NOR Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 21 125 155 tTLH 4.5 8 25 31 ns 6.0 7 21 26 Refer to test circuit 2.0 16 125 155 tTHL 4.5 7 25 31 ns 6.0 6 21 26 2.0 19 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's Inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator INPUT OUTPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% INPUT 10% 90% 50% 10% GND tTHL OUTPUT 90% 50% 10% 10% tTLH 90% 50% VOL VOH tPHL tPLH 23 ELM7S32,ELM7S32B ■ DESCRIPTION 2-input OR Gate ELM7S32,ELM7S32B are CMOS 2-input OR gate ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX Low High High High ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E 4 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S32, ELM7S32B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 24 CMOS LOGIC IC ELM7S32,ELM7S32B 2-input OR Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V or 4.5 4.18 4.36 4.13 VIL IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIL IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.12 0.26 0.33 IOL = 2mA 6.0 0.16 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 4 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 25 CMOS LOGIC IC ELM7S32,ELM7S32B 2-input OR Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 22 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 18 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 17 100 125 tPLH 4.5 7 20 25 ns 6.0 6 17 21 Refer to test circuit 2.0 18 100 125 tPHL 4.5 8 20 25 ns 6.0 7 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC OUTPUT Pulse Oscillator 50Ω INPUT CL * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% 90% 50% 10% INPUT 10% tPLH tPHL 90% 50% 10% 10% GND 90% 50% VOH OUTPUT VOL tTLH tTHL 26 ELM7S04,ELM7S04B ■ DESCRIPTION Inverter ELM7S04,ELM7S04B are CMOS inverter ICs. They realizes a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name NC INY GND OUTX VCC Input INA Low High Output OUTX High Low ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E 5 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S04, ELM7S04B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 27 CMOS LOGIC IC ELM7S04,ELM7S04B Inverter ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIL IOH = -20μA VOH 6.0 5.9 6.0 5.9 V 4.5 4.18 4.35 4.13 IOH = -2mA 6.0 5.68 5.83 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.12 0.26 0.33 IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 28 CMOS LOGIC IC ELM7S04,ELM7S04B Inverter ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 22 125 155 tTLH 4.5 8 25 31 ns 6.0 6 21 26 Refer to test circuit 2.0 16 125 155 tTHL 4.5 7 25 31 ns 6.0 6 21 26 2.0 18 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator 50Ω INPUT OUTPUT CL * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% INPUT 10% 90% 50% 10% GND tTHL OUTPUT 90% 50% 10% 10% tTLH 90% 50% VOL VOH tPHL tPLH 29 ELM7SU04,ELM7SU04B ■ DESCRIPTION Unbuffer Inverter ELM7SU04,ELM7SU04B are CMOS unbuffer inverter ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name NC INY GND OUTX VCC Input INA Low High Output OUTX High Low ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E 6 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7SU04, ELM7SU04B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 30 CMOS LOGIC IC ELM7SU04,ELM7SU04B Unbuffer Inverter ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.7 1.7 VIH 4.5 3.6 3.6 V 6.0 4.8 4.8 2.0 0.3 0.3 VIL 4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 1.8 2.0 1.8 VIN= 4.5 4.0 4.5 4.0 VIL IOH = -20μA VOH 6.0 5.5 6.0 5.5 V 4.5 4.18 4.31 4.13 IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.2 0.2 VIN= 4.5 0.0 0.5 0.2 VIH IOL = 20μA VOL 6.0 0.0 0.5 0.5 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 4 10 ns 3 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 31 CMOS LOGIC IC ELM7SU04,ELM7SU04B Unbuffer Inverter ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 29 125 155 tTLH 4.5 11 25 31 ns 6.0 11 21 26 Refer to test circuit 2.0 26 125 155 tTHL 4.5 9 25 31 ns 6.0 8 21 26 2.0 18 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Refer to test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator 50Ω INPUT OUTPUT CL * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% INPUT 10% 90% 50% 10% GND tTHL OUTPUT 90% 50% 10% 10% tTLH 90% 50% VOL VOH tPHL tPLH 32 ELM7SU04W,ELM7SU04BW ■ DESCRIPTION Unbuffer Inverter × 2 ELM7SU04W, ELM7SU04BW are CMOS unbuffer inverter ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. ■ FEATURES ・ Package : SOT-26 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Pin Name OUTA GND INB OUTB VCC INA Input INA INB Low High Output OUTA OUTB High Low ■ MARKING SOT-26 ①②③ No. ① ② ③ Ma rk E B A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7SU04W, ELM7SU04BW Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 33 CMOS LOGIC IC ELM7SU04W,ELM7SU04BW Unbuffer Inverter×2 ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.7 1.7 VIH 4.5 3.6 3.6 V 6.0 4.8 4.8 2.0 0.3 0.3 VIL 4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 1.8 2.0 1.8 VIN= 4.5 4.0 4.5 4.0 VIH IOH = -20μA VOH 6.0 5.5 6.0 5.5 V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.2 0.2 VIN= 4.5 0.0 0.5 0.5 VIH IOL = 20μA VOL 6.0 0.0 0.5 0.5 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 5 10 ns 5 10 5 15 ns 5 15 ( CL=15pF, tr=tf=6ns,VCC=5V ) Conditions Refer to following test circuit Refer to following test circuit 34 CMOS LOGIC IC ELM7SU04W,ELM7SU04BW Unbuffer Inverter×2 ( CL=50pF, tr=tf=6ns ) Top = 25℃ T op = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 Refer to test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 48 100 125 tPLH 4.5 12 20 25 ns 6.0 9 17 21 Refer to test circuit 2.0 48 100 125 tPHL 4.5 12 20 25 ns 6.0 9 17 21 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator 50Ω INPUT OUTPUT CL * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% INPUT 10% 90% 50% 10% GND tTHL OUTPUT 90% 50% 10% 10% tTLH 90% 50% VOL VOH tPHL tPLH 35 ELM7S86,ELM7S86B ■ DESCRIPTION 2-input EXCLUSIVE OR Gate ELM7S86,ELM7S86B are CMOS 2-input EXOR gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name INB INA GND OUTX VCC Input INA INB Low Low Low High High Low High High Output OUTX Low High High Low ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E 8 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S86, ELM7S86B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 36 CMOS LOGI IC ELM7S86,ELM7S86B 2-input EXCLUSIVE OR Gate ■SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Input Voltage Output Voltage Input Current Static Current ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL Propagation tPLH Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 7 10 ns 7 10 9 20 ns 9 20 Conditions Refer to following test circuit Refer to following test circuit 37 CMOS LOGI IC ELM7S86,ELM7S86B 2-input EXCLUSIVE OR Gate ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 Refer to test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 60 135 170 tPLH 4.5 16 27 34 ns 6.0 10 22 28 Refer to test circuit 2.0 60 135 170 tPHL 4.5 16 27 34 ns 6.0 10 22 28 CIN 5 10 10 pF CPD 10 pF Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC ■ TEST CIRCUIT VCC Pulse Oscillator INPUT OUTPUT CL 50Ω * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% 90% 50% 10% INPUT 10% tPLH tPHL 90% 50% 10% 10% GND 90% 50% VOH OUTPUT VOL tTLH tTHL 38 ELM7S66,ELM7S66B ■ DESCRIPTION Analog Switch ELM7S66,ELM7S66B are CMOS analog switches. They realize a high speed operation with low power consumption by CMOS features. With a low on resistance and a high transmission rate, they realize a wider input voltage range. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name IN/OUT OUT/IN GND Control VCC Control Low High Switch OFF ON ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E 9 A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S66, ELM7S66B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 39 CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ■ SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Sym. VIH Input Voltage VIL Top = 25℃ Top = -40∼+85℃ VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 1.5 1.5 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.5 0.5 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 2000 5000 6250 VCONT=VIH 4.5 100 200 250 Ω VIN=0∼VCC IIN/OUT=1mA 6.0 60 170 210 6.0 6.0 6.0 6.0 -0.1 -0.1 -0.1 0.1 0.1 0.1 1.0 -1.0 -1.0 -1.0 1.0 1.0 1.0 10.0 μA μA μA μA VCONT=VIL VIN=VCC, VOUT=GND VCONT=VIH VIN = VCC or GND VIN = VCC or GND VIN = VCC or GND ON-Resistor SW-Off Leak-Current RON IS (Off) IS SW-ON Leak-Current (On) Cont Input Current ICONT Static Current ICC 40 CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ■AC ELECTRICAL CHARACTERISTICS ( tr=tf=6ns ) Parameter Propagation Delay-time tPHL tZL Output Enable-Time tZH tLZ Output Disable-Time tHZ Maximum Control Input Frequency Control Iutput Capacity fIN CIN Sym. tPLH T a = - 4 0 ∼+ 8 5 ℃ Ta = 25℃ VCC Min. Typ. Max. Min. Max. Units 2.0 50 65 3.3 4 10 13 ns 5.0 9 11 2.0 - 115 145 3.3 10 23 29 ns 5.0 20 -25 2.0 - 115 145 4.5 14 23 29 ns 6.0 20 -25 2.0 20 4.5 30 MHz 6.0 30 5 10 10 pF Conditions CL=50pF RL=10kΩ CL=50pF RL=1kΩ CL=50pF RL=1kΩ RL=1kΩ CL=15pF VOUT=VCC/2 SW-Input/Output CIN/OUT Capacity Feed-Through Capacity CIN-OUT Equivalent Inner Capacity CPD - - 6 0.5 13 - - - pF pF pF Refer to test cicuit * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC 41 CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ■ TEST CIRCUIT ● RON : ON Resister VCONT=VIH VCC VCC VIN=VCC (ON) GND VOUT RON = VIN - VOUT (Ω) 10-3 1.OmA + v VIN-VOUT - ● IS(OFF) : SW-OFF leak, IS(ON) : SW-ON leak Current VCONT=VIL VIN= VCC or GND A VCC VCC (OFF) GND VOUT= GND or VC C VCONT=VIH VIN= VCC or GND A VCC VCC VOUT OPE N (OFF) GND ● tPLH, tPHL : Propagation dely-time (SW-input → SW-output) VCONT VCC VCC VIN Pulse Oscillator 50Ω tr 90% 90% 50% tf VC C 10% VOUT (ON) GND RL= 10kΩ 50% VIN 10% GN D VO H 50% CL= 50p F 50% VOUT tPLH tPHL VO L 42 CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch ● tZH, tZL/tHZ, tLZ : Output enable, Output disable time VCC Pulse Oscillator VIN S1 50Ω VCONT VCC VOUT RL= 1kΩ S2 GND CF= 50pF RL= 1kΩ tr 90% 50% 10% 90% 50% tf VC C 10% 90% 50% VCONT GN D VO H VO L VOUT 90% 50% 10% 10% VO H VO L tZH tZL tHZ tLZ S1 VCC GND VCC GND S2 GND VCC GND VCC tZH tHZ ● Maximum controlled input frequency VCONT VCC VCC VIN=VCC GND VOUT VCONT 10% 10% 6ns 90% 90% 6ns VC C GN D RL= 1kΩ CL= 50p F VOUT VCC/2 ● Feed-through capacity VCONT=VIL 0.1μF VCC VIN (OFF) GND RL= 600Ω CL= 50pF * VIN = VCC/2 VCC/2 0dB, f = 1MHz VCC fin 43 ELM7S14,ELM7S14B ■ DESCRIPTION SCHMITT Inverter ELM7S14,ELM7S14B are CMOS schmitt inverter ICs. They realizes a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output. ■ FEATURES ・ Package : SOT-25 package ・Same electrical characteristics as 74HC Series ・Power voltage range : 2.0 ∼ 6.0V ・Operation temp. range : -40 ∼ +85℃ ・ | IOH | = IOL = 2mA (min) ■ PIN CONFIGURATION TOP VIEW 5 4 1 2 3 Pin No. 1 2 3 4 5 Pin Name NC INY GND OUTX VCC Input INA Low High Output OUTX High Low ■ MARKING SOT-25 ①②③ No. ① ② ③ Ma rk E A A∼M (excepted I) Contents ELM7Sxx, ELM7SxxB series ELM7S14, ELM7S14B Lot No. ■MAXIMUM ABSOLUTE RATINGS Parameter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Symbol VCC VIN VOUT IIK IOK IOUT ICC, IGND Pd Tstg Value -0.5∼+7.0 -0.5∼VCC+0.5 -0.5∼VCC+0.5 ±20 ±20 ±25 ±25 200 -65∼+150 Units V V V mA mA mA mA mW ℃ 44 CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter ■ SUGGESTED OPERATING CONDITION Parameter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Symbol VCC VIN VOUT Top tr,tf Value 2.0∼6.0 0∼VCC 0∼VCC -40∼+85 0∼1000 (VCC=2.0V) 0∼500 (VCC=4.5V) 0∼400 (VCC=6.0V) Units V V V ℃ ns ■DC ELECTRICAL CHARACTERISTICS Parameter Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Ma x. Min. Ma x. Units Conditions 2.0 1.5 1.5 Vt+ 4.5 3.15 3.15 V 6.0 4.2 4.2 2.0 0.3 0.3 Vt4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 0.2 1.2 0.2 1.2 Vh 4.5 0.4 2.25 0.4 2.25 V 6.0 0.6 3.0 0.6 3.0 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20μA VOH 6.0 5.9 6.0 5.9 V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 5.68 5.80 5.63 IOH = -2.6mA 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20μA VOL 6.0 0.0 0.1 0.1 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA IIN 6.0 -0.1 0.1 -1.0 1.0 μA VIN = VCC or GND ICC 6.0 1.0 10.0 μA VIN = VCC or GND Threshold Voltage Hysteresis Voltage Output Voltage Input Current Static Current 45 CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter ■AC ELECTRICAL CHARACTERISTICS ( CL=15pF, tr=tf=6ns,VCC=5V ) Parameter Sym. High Output tTLH Down-time tTHL tPLH Propagation Delay-time tPHL Top = 25℃ Min. Typ. Ma x. Units 5 10 ns 5 10 7 15 ns 7 15 Conditions Refer to following test circuit Refer to following test circuit Parameter High-Output Down-time Propagation Delay-time Input Capacity Equivalent Inner Capacity ( CL=50pF, tr=tf=6ns ) Top = 25℃ Top = -40∼+85℃ Sym. VCC Min. Typ. Max. Min. Max. Units Conditions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 Refer to test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 48 100 125 tPLH 4.5 12 20 25 ns 6.0 9 17 21 Refer to test circuit 2.0 48 100 125 tPHL 4.5 12 20 25 ns 6.0 9 17 21 CIN 5 10 10 pF CPD 10 pF * CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current consumption at non-load is calculated as following formula; ICC (opr) = CPD ・ VCC ・ fIN + ICC 46 CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter ■ TEST CIRCUIT VCC Pulse Oscillator 50Ω INPUT OUTPUT CL * Output should be opened when measuring current consumption. ■ MEASURED WAVE PATTERN 6 ns 6 ns VCC 90% 50% INPUT 10% 90% 50% 10% GND tTHL OUTPUT 90% 50% 10% 10% tTLH 90% 50% VOL VOH tPHL tPLH 47