CEM8401

CEM8401 Feb. 2003 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) 5 FEATURES 30V , 7.5A , RDS(ON)=21m Ω @VGS=10V. RDS(ON)=30mΩ @VGS=4.5V. -30V , -5.0A , RDS(ON)=50m Ω @VGS=-10V. RDS(ON)=75mΩ @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. SO-8 1 1 2 3 4 D1 8 D1 7 D2 6 D2 5 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG N-Channel P-Channel 30 20 7.5 30 2.3 2.0 -55 to 150 -30 20 5.0 20 -2.3 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 62.5 C/W 5-190 CEM8401 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7.4A VDS = 5V, VGS = 10V VDS = 15V, ID = 9A Min Typ C Max Unit 5 30 1 V µA 100 nA 1 18 25 15 16 857 343 105 3 21 30 V mΩ mΩ A S PF PF PF ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c VDS =25V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 15V, ID = 3.5A, VGS = 10V, RGEN = 6 Ω 22 34 43 18 28 45 70 90 35 35 ns ns ns ns nC nC nC VDS =15V, ID = 4.7A, VGS =10V 5-191 4 7.5 CEM8401 P-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS = 0V, ID = 250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250µA VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.4A VDS = -5V, VGS = -10V VDS = -15V, ID = -4.2A Min Typ C Max Unit -30 -1 V µA 100 nA -1 40 65 -15 7 1124 488 150 -3 50 75 V mΩ mΩ A S PF PF PF OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c VDS =-15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -15V, ID = -4.2A, VGEN = -10V, RGEN = 6 Ω 21 23 33 60 30 40 45 65 100 36 ns ns ns ns nC nC nC VDS =-15V, ID = -4.2A, VGS =-10V 5-192 4 7.5 CEM8401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = 5.1A N-Ch VGS = 0V, Is =-3.6A P-Ch Min Typ Max Unit 5 0.8 -0.8 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 VGS=10 thru 4V 30 -55 C 24 16 ID, Drain Current (A) 12 ID, Drain Current (A) 18 8 VGS=3V 12 25 C 6 0 Tj=125 C 4 0 0 0.5 1.0 1.5 2.0 1 2 3 4 5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 Ciss Figure 2. Transfer Characteristics 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150 ID=9.0A VGS=10V C, Capacitance (pF) 800 600 Coss 400 200 0 0 5 10 15 20 25 30 Crss VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 5-193 CEM8401 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 ID=250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 5 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 25 Figure 6. Breakdown Voltage Variation with Temperature 20 10 VGS=0V gFS, Transconductance (S) 15 Is, Source-drain current (A) 20 20 10 5 VDS=15V 0 0 5 10 15 1 0.1 0.4 0.6 0.8 1.0 1.2 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 VGS, Gate to Source Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current 8 6 4 2 0 VDS=15V ID=4.7A ID, Drain Current (A) 10 1 S RD (O N) Lim it 1m s 10 10 1s 0 ms 0m s 10 10 DC s 10 -1 -2 10 TA=25 C Tj=150 C Single Pulse 10 1 10 0 10 1 0 8 16 24 32 10 -1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 5-194 Figure 10. Maximum Safe Operating Area CEM8401 P-Channel -ID, Drain Current (A) 20 -VGS=10 thru 5V 15 -55 C 16 -VGS=4V 12 12 -ID, Drain Current (A) 9 8 6 25 C 3 0 Tj=125 C 5 -VGS=3V 4 0 0 1 2 3 4 5 6 1 2 3 4 5 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 11. Output Characteristics Figure 12. Transfer Characteristics RDS(ON), On-Resistance(Ohms) 1800 1500 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150 ID=-4.2A VGS=-10V C, Capacitance (pF) 1200 900 600 300 0 0 5 10 15 Ciss Coss Crss 20 25 30 -VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C) Figure 13. Capacitance Figure 14. On-Resistance Variation with Temperature 1.15 ID=-250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 VDS=VGS ID=-250 A BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 75 100 125 150 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 15. Gate Threshold Variation with Temperature 5-195 Figure 16. Breakdown Voltage Variation with Temperature CEM8401 P-Channel 20 1.15 20 10 VGS=0V 1.10 ID=250 A 1.05 1.00 1 0.95 0.90 0.1 0.85 16 0.4 -25 0 25 0.6 50 75 100 125 150 1.2 1.0 0.8 5 gFS, Transconductance (S) 12 8 4 VDS=-15V 0 0 4 8 12 -Is, Source-drain current (A) 16 -IDS, Drain-Source Current (A) -VSD, Body Diode Forward Voltage (V) Figure 17. Transconductance Variation with Drain Current Figure 18. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage (V) -ID, Drain Current (A) 8 6 4 2 0 0 VDS=-15V ID=-4.2A 10 1 RD S(O N) Lim it 10 1m s 10 0 ms 0m 1s 10 DC s s 10 10 -1 -2 10 TA=25 C Tj=150 C Single Pulse 10 1 10 0 10 1 8 16 24 32 10 -1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 19. Gate Charge Figure 20. Maximum Safe Operating Area 5-196 CEM8401 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 5 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 21. Switching Test Circuit Figure 22. Switching Waveforms 10 2 0 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 Duty Cycle=0.5 0.2 10 -1 0.1 0.2 0.05 0.1 10 -2 0.1 0.02 0.05 0.01 0.02 Single Pulse Single Pulse PDM t1 PDM t2 t1 t2 1. R JA (t)=r (t) *JA (t)=r (t) * R JA 1. R R JA 2. R JA=See R JA=See Datasheet 2. Datasheet P* R J (t) 3. TJM-TA =3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 D=t1/t2 4. Duty Cycle, 10 10 -2 -2 0.01 10 -3 10 -4 10 10 -3-3 10 -1 10 -1 10 0 1 10 1 10 10 2 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 23. 5-197