WSA753
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
◇ Low Speed Switching ◇ Complement to WSC752
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse)* Base Current Collector Power Dissipation(Tc=25℃) Collector Power Dissipation(Ta=25℃) Junction Temperature Storage Temperature
*PW≤ 10ms,Duty Cycle≤ 50%
(Ta=25℃)
Symbol VCBO VCEO VEBO IC Ic IB PC PC Tj Tstg
Value -40 -30 -5 -2 -7 -0.6 15 1.2 150 -55~ +150
Unit V V V A A A W W ℃ ℃
1. Base 2. Collector 3. Emitter
3 1 2
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO #hFE
(Ta=25℃, unless otherwise specified)
Test Condition Ic=-100㎂ ,IE=0 Ic=-10mA, IB=0 Ic=-1mA ,IC=0 VCB=-40V ,IE=0 VEB=-5V ,IC=0 VCE=-2V, IC=-500mA
Min TYP MAX Unit -40 -30 -5 -0.1 -0.1 100 -0.5 400 -0.8 -2 V MHZ pF V V V ㎂ ㎂
VCE(sat)(1) IC=-2.0A, IB=-200㎃ VCE(sat)(2) IC=-1.5A, IB=-30㎃
Current Gain Bandwith Product Output Capacitance
* Pulse test:PW≤ 350us,Duty cycle≤ 2% # hFE Classification:
Classification hFE O 100~200 Y 160~320
fT Cob
VCE=-5V,IC=-500mA VCB=-10V ,IE=0 f=1MHZ
120 13
G 200~400
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
1
WSA753
Static Characteristics
2.2 2.0 1000
DC Current Gain
VCE=-2V
300
hFE ,DC Current Gain
1.6 1.2 0.8
IB=-10mA IB=-8mA IB=-6mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA
-4 -8 -12 -16
Ic, Collector Current, A VBE(sat) VCE(sat),Saturation Voltage,V 、 Pc(W),Power Dissipation
100
30 10
0.4 0
-1
-10
-100
-1000
-10000
Vce,Collector-Emitter Voltage ,V
IC,Collector Current,mA
Base Emitter Saturation Voltage Collector Emitter Saturation Voltage
IC=10IB
1000
Current Gain-Bandwidth Product
VCE=-5V
Current Gain Bandwidth Product,fT(MHZ) -
300 100 50 30 10
-1000
VBE(sat)
-100
-10
VCE(sat)
1
-1
-10
-100
-1000
-0.01
-0.1
-1
IC,Collector Current,mA
IC,Collector Current,A
-10
Power Derating
16 14 12 8
Safe Operating Area
Ic Max(Pulse) 100uS
1mS -3 10mS Ic Max(DC)
-1
Ic(A)Collector Current
-0.3 -0.1
4
50
100
150
200
250
-0.01 -1 -3 -10 -30 -100 -300 -1000
Tc(℃), Case Temperature
VCE(V),Collector Emitter Voltage JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
2
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