P2804HVG

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 40 RDS(ON) 28mΩ ID 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) 1 SYMBOL VDS VGS LIMITS 40 ±20 7 6 40 2 1.3 -55 to 150 275 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C 40 1 1.5 3 ±100 nA 1 10 µA V LIMITS UNIT MIN TYP MAX 1 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VDS = 5V, VGS = 10V VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A VDS = 10V, ID = 5A DYNAMIC 20 30 21 24 42 28 A mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 20V ID ≅ 1A, VGS = 10V, RGEN = 6Ω VDS = 0.5V(BR)DSS, VGS = 5V, ID = 7A VGS = 0V, VDS = 10V, f = 1MHz 790 175 65 16 2.5 2.1 2.2 7.5 4.4 15 nS nC pF Gate-Source Charge2 Gate-Drain Charge 2 2 Turn-On Delay Time2 Rise Time Turn-Off Delay Time2 Fall Time2 11.8 21.3 11 20 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Pulsed Current 3 IS ISM VSD trr Qrr IF = Is, VGS = 0V IF = 5A, dlF/dt = 100A / µS 15.5 7.9 1.3 2.6 1 A V nS Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge 1 2 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2804HVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125° C 1 25° C 0.1 -55° C 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 3 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free 4 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Dimension Min. A B C D E F G mm Dimension Max. 5.0 4.0 6.2 0.51 H I J K L 1.75 0.25 Typ. 4.9 3.9 6.0 0.445 1.27 Min. 0.5 0.18 Typ. 0.715 0.254 0.22 Max. 0.83 0.25 4.8 3.8 5.8 0.38 0° 4° 8° 1.35 0.1 1.55 0.175 M N J F D E G I H K B C A 5 AUG-19-2004