P5506HVG

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 60 RDS(ON) 55mΩ ID 4.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS LIMITS 60 ±20 4.5 4 20 2 1.3 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V, TJ = 55 °C 60 1.0 1.5 2.5 ±100 1 10 µA V nA MIN TYP MAX UNIT 1 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free On-State Drain Current1 Drain-Source Resistance1 On-State ID(ON) VDS = 5V, VGS = 10V VGS = 4.5V, ID = 4A 20 55 42 14 75 55 A mΩ S RDS(ON) gfs VGS = 10V, ID = 4.5A VDS = 10V, ID = 4.5A Forward Transconductance1 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time2 Turn-Off Delay Time Fall Time2 2 2 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) VDD = 30V ID ≅ 1A, VGS = 10V, RGEN = 6Ω VDS = 0.5V(BR)DSS, VGS = 10V, ID = 4.5A VGS = 0V, VDS = 25V, f = 1MHz 650 80 35 12.5 2.4 2.6 11 8 19 6 20 18 35 15 nS 18 nC pF Continuous Current Pulsed Current 1 2 3 IS ISM VSD IF = IS A, VGS = 0V 1.3 2.6 1 A V Forward Voltage1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P5506HVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125° C 1 0.1 25° C 0.01 -55° C 0.001 0.0001 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 3 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free 4 AUG-19-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Dimension Min. A B C D E F G mm Dimension Max. 5.0 4.0 6.2 0.51 H I J K L 1.75 0.25 Typ. 4.9 3.9 6.0 0.445 1.27 Min. 0.5 0.18 Typ. 0.715 0.254 0.22 Max. 0.83 0.25 4.8 3.8 5.8 0.38 0° 4° 8° 1.35 0.1 1.55 0.175 M N J F D E G I H K B C A 5 AUG-19-2004