AUIRF6215S

AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  P-Channel MOSFET  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * AUIRF6215S VDSS -150V RDS(on) max. 0.29 ID -13A D S G Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number AUIRF6215S Package Type D2-Pak D2 Pak AUIRF6215S G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRF6215S AUIRF6215STRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol ID @ TC = 25°C Parameter Continuous Drain Current, VGS @ -10V Max. -13 Units ID @ TC = 100°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Maximum Power Dissipation -9.0 -44 3.8 A PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) VGS EAS IAR EAR dv/dt TJ TSTG Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient ( PCB Mount, steady state)  RJA 110 0.71 ± 20 310 -6.6 11 -5.0 -55 to + 175 W W/°C V mJ A mJ V/ns °C 300 Typ. ––– Max. 1.4 40 Units °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 Rev. 2.3, 2020-12-17 AUIRF6215S Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -150 ––– ––– V VGS = 0V, ID = -250µA ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.29 VGS = -10V, ID = -6.6A   ––– ––– 0.58 VGS = -10V, ID = -6.6A,TJ =150°C  -2.0 ––– -4.0 V VDS = VGS, ID = -250µA 3.6 ––– ––– S VDS = -25V, ID = -6.6A ––– ––– -25 VDS = -150V, VGS = 0V µA ––– ––– -250 VDS = -120V,VGS = 0V,TJ =150°C ––– ––– -100 VGS = -20V nA ––– ––– 100 VGS = 20V Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 36 53 37 66 8.1 35 ––– ––– ––– ––– LS Internal Source Inductance ––– 7.5 ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 860 220 ––– ––– Crss Reverse Transfer Capacitance ––– 130 ––– Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = -6.6A nC VDS = -120V VGS = -10V VDD = -75V ID = -6.6A ns RG= 6.8 RD= 12 Between lead,6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = -25V ƒ = 1.0MHz, See Fig.5 Min. Typ. Max. Units ––– ––– -11 ––– ––– -44 ––– ––– ––– ––– 160 1.2 -1.6 240 1.7 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = -6.6A,VGS = 0V  ns TJ = 25°C ,IF = -6.6A µC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25°C, L = 14mH, RG = 25, IAS = -6.6A. (See fig.12) ISD -6.6A, di/dt 620A/µs, VDD V(BR)DSS, TJ  175°C. Pulse width 300µs; duty cycle  2%. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994  R is measured at TJ of approximately 90°C      2 Rev. 2.3, 2020-12-17 AUIRF6215S Fig. 1 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics 3 Fig. 2 Typical Output Characteristics Fig. 4 Normalized On-Resistance vs. Temperature Rev. 2.3, 2020-12-17 AUIRF6215S Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area Rev. 2.3, 2020-12-17 AUIRF6215S Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction -to-Case 5 Rev. 2.3, 2020-12-17 AUIRF6215S Fig 12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 13a. Gate Charge Waveform 6 Rev. 2.3, 2020-12-17 AUIRF6215S Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power 7 Rev. 2.3, 2020-12-17 AUIRF6215S D2 - Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2- Pak (TO-263AB) Part Marking Information Part Number AUIRF6215S YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging 8 Rev. 2.3, 2020-12-17 AUIRF6215S D2- Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging 9 Rev. 2.3, 2020-12-17 AUIRF6215S Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level D2-Pak Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant MSL1 Class M3 (+/- 400V)† AEC-Q101-002 Class H1B (+/- 1000V)† AEC-Q101-001 Class C5 (+/- 1125V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date Rev. Comments 11/13/2015 2.1   Updated datasheet with corporate template Corrected ordering table on page 1. 10/10/2017 2.2  Corrected typo error on part marking on page 8. 12/16/2020 2.3   Correct footer date (inconsistent date) on all pages Removed “HEXFET® Power MOSFET” -page1 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 Rev. 2.3, 2020-12-17