PD - 97712A
AUTOMOTIVE GRADE
AUIRFS3306
Features
●
●
●
●
●
●
●
●
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
3.3m:
4.2m:
160A
ID (Package Limited)
120A
c
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
G
D
S
D2Pak
AUIRFS3306
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
d
d
e
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
f
dv/dt
TJ
TSTG
Units
c
c
160
110
120
620
230
1.5
± 20
184
See Fig. 14, 15, 22a, 22b
14
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
k
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Typ.
Max.
Units
–––
–––
0.65
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/05/11
AUIRFS3306
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60
–––
–––
2.0
230
–––
–––
–––
–––
–––
–––
0.07
3.3
–––
–––
0.7
–––
–––
–––
–––
–––
–––
4.2
4.0
–––
–––
20
250
100
-100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 150μA
S VDS = 50V, ID = 75A
Ω
μA VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Effective Output Capacitance (Energy Related) –––
–––
Effective Output Capacitance (Time Related)
h
85
20
26
59
15
76
40
77
4520
500
250
720
880
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
d
g
nC
Conditions
ID = 75A
VDS =30V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 30V
ID = 75A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V , See Fig. 11
VGS = 0V, VDS = 0V to 48V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
–––
–––
–––
c
620
Conditions
A
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
VR = 51V,
TJ = 125°C
IF = 75A
di/dt = 100A/μs
TJ = 25°C
S
g
––– –––
1.3
V
–––
31
–––
ns
–––
35
–––
–––
34
–––
nC
TJ = 125°C
–––
45
–––
–––
1.9
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.04mH
RG = 25Ω, IAS = 96A, VGS =10V. Part not recommended for use
above this value.
2
––– 160
g
ISD ≤ 75A, di/dt ≤ 1400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
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AUIRFS3306
Qualification Information
†
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
2
MSL1
D Pak
Class M4 (+/- >800V)
AEC-Q101-002
†††
Human Body Model
Class H2 (+/- 3000V)
AEC-Q101-001
Charged Device Model
Class C5 (+/- >2000V)
AEC-Q101-005
RoHS Compliant
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFS3306
1000
1000
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
BOTTOM
100
4.5V
≤ 60μs PULSE WIDTH
Tj = 175°C
≤ 60μs PULSE WIDTH
Tj = 25°C
10
10
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
2.5
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(Α)
100
Fig 2. Typical Output Characteristics
1000
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
≤ 60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
8.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
8000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
4000
2000
Coss
Crss
ID= 75A
VDS = 48V
VDS= 30V
VDS= 12V
16
12
8
4
0
0
1
20 40 60 80 100 120 140 160 180
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
10
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
0
20
40
60
80
100
120
140
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS3306
10000
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
TJ = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
1msec
100
10msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
DC
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
2.0
V(BR)DSS , Drain-to-Source Breakdown Voltage
180
Limited By Package
140
120
100
80
60
40
20
0
25
50
75
100
125
150
10
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
160
1
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
ID, Drain Current (A)
100μsec
80
ID = 5mA
70
60
50
-60 -40 -20 0
175
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
EAS, Single Pulse Avalanche Energy (mJ)
1.5
Energy (μJ)
1.0
0.5
0.0
800
I D
13A
18A
BOTTOM 96A
TOP
600
400
200
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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60
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
AUIRFS3306
1
Thermal Response ( ZthJC )
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
R1
R1
0.01
τJ
τJ
τ1
τC
τ1
τ2
τ2
Ri (°C/W)
τι (sec)
0.249761
0.00028
0.400239 0.005548
Ci= τi/Ri
C
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.01
0.05
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
200
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 96A
160
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFS3306
16
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 150μA
4.0
3.5
12
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
4.5
3.0
2.5
8
2.0
IF = 30A
VR = 51V
4
TJ = 125°C
1.5
TJ = 25°C
0
1.0
-75 -50 -25
0
25
50
75
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / μs)
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
16
350
300
250
QRR - (nC)
IRRM - (A)
12
8
IF = 45A
VR = 51V
4
200
150
IF = 30A
VR = 51V
100
TJ = 125°C
50
TJ = 125°C
TJ = 25°C
TJ = 25°C
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
350
300
QRR - (nC)
250
200
150
100
50
0
IF = 45A
VR = 51V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS3306
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD
Fig 22b. Unclamped Inductive Waveforms
VDS
VDS
+
90%
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
Fig 23a. Switching Time Test Circuit
tr
td(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS3306
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUFS3306
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
AUIRFS3306
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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AUIRFS3306
Ordering Information
Base part number
AUIRFS3306
www.irf.com
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRFS3306
AUIRFS3306TRL
AUIRFS3306TRR
11
AUIRFS3306
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
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any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
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12
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