AUIRFS8403
AUIRFSL8403
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
l
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l
123A
D
D
S
G
G
D
S
TO-262
AUIRFSL8403
D2Pak
AUIRFS8403
Applications
3.3mΩ
ID (Silicon Limited)
S
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
2.6mΩ
max.
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
l
40V
RDS(on) typ.
Description
l
VDSS
G
D
S
Gate
Drain
Source
Ordering Information
Base part number
Package Type
AUIRFSL8403
AUIRFS8403
TO-262
D2Pak
Standard Pack
Form
Quantity
Complete Part Number
Tube
Tube
Tape and Reel Left
Tape and Reel Right
50
50
800
800
AUIRFSL8403
AUIRFS8403
AUIRFS8403TRL
AUIRFS8403TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
TJ
T STG
Parameter
d
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
c
Thermal Resistance
Symbol
RθJC
RθJA
Junction-to-Case i
Parameter
Junction-to-Ambient (PCB Mount) D2 Pak
A
W
W/°C
V
°C
300
111
160
mJ
See Fig. 14, 15 , 24a, 24b
A
mJ
j
c
Units
123
87
492
99
0.66
± 20
-55 to + 175
c
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
EAR
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Typ.
Max.
Units
–––
–––
1.52
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
Conditions
VGS = 0V, ID = 250μA
c
Δ V(BR)DSS /ΔT J
Breakdown Voltage Temp. Coefficient
–––
0.033
–––
V/°C Reference to 25°C, ID = 5mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.6
3.3
mΩ
VGS(th)
Gate Threshold Voltage
2.2
3.0
3.9
V
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Internal Gate Resistance
–––
1.6
–––
IGSS
RG
μA
nA
VGS = 10V, ID = 70A
f
VDS = VGS , ID = 100μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, T J = 125°C
VGS = 20V
VGS = -20V
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Min.
Typ. Max. Units
gfs
Symbol
Forward Transconductance
Parameter
269
–––
–––
S
Conditions
VDS = 10V, ID = 70A
Qg
Total Gate Charge
–––
62
93
ID = 70A
Qgs
Gate-to-Source Charge
–––
16
–––
VDS =20V
Qgd
Gate-to-Drain ("Miller") Charge
–––
20
–––
Qsync
Total Gate Charge Sync. (Q g - Qgd)
–––
42
–––
nC
VGS = 10V
f
ID = 70A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 26V
tr
Rise Time
–––
77
–––
ID = 70A
td(off)
Turn-Off Delay Time
–––
26
–––
tf
Fall Time
–––
43
–––
VGS = 10V
Ciss
Input Capacitance
–––
3183
–––
VGS = 0V
Coss
Output Capacitance
–––
475
–––
Crss
Reverse Transfer Capacitance
–––
331
–––
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
–––
596
–––
VGS = 0V, VDS = 0V to 32V
Coss eff. (TR)
Effective Output Capacitance (Time Related)
–––
688
–––
VGS = 0V, VDS = 0V to 32V
Min.
Typ. Max. Units
ns
RG =1Ω
f
VDS = 25V
pF
ƒ = 1.0 MHz, See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode)
Diode Forward Voltage
–––
0.9
1.3
dv/dt
Peak Diode Recovery
–––
7.6
–––
trr
Reverse Recovery Time
–––
22
–––
–––
24
–––
15
–––
c
e
–––
–––
–––
118
472
Qrr
Reverse Recovery Charge
–––
–––
15
–––
IRRM
Reverse Recovery Current
–––
1.0
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50Ω,
IAS = 70A, VGS =10V.
ISD ≤ 70A, di/dt ≤ 1174A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
2
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© 2013 International Rectifier
Conditions
MOSFET symbol
A
–––
h, See Fig. 11
g
V
D
showing the
integral reverse
G
p-n junction diode.
T J = 25°C, IS = 70A, VGS = 0V
S
f
V/ns T J = 175°C, IS = 70A, VDS = 40V
ns
nC
A
T J = 25°C
VR = 34V,
T J = 125°C
IF = 70A
di/dt = 100A/μs
T J = 25°C
f
T J = 125°C
T J = 25°C
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L=0.046mH, R G = 50Ω, IAS = 70A, VGS =10V.
May 08 2013
AUIRFS/SL8403
1000
1000
100
BOTTOM
100
10
4.5V
1
≤60μs PULSE WIDTH
BOTTOM
4.5V
10
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.2
T J = 175°C
100
10
TJ = 25°C
1
VDS = 10V
≤60μs PULSE WIDTH
0.1
2
4
6
8
ID = 70A
VGS = 10V
1.8
1.4
1.0
0.6
10
-60
-20
Fig 3. Typical Transfer Characteristics
100000
60
100
140
180
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
10000
Ciss
Coss
1000
20
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss
ID= 70A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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© 2013 International Rectifier
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
May 08 2013
AUIRFS/SL8403
1000
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100
TJ = 25°C
10
1
1000
100μsec
100
1msec
DC
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
0.1
2.0
ID, Drain Current (A)
100
75
50
25
0
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
125
75
50
Id = 5.0mA
49
48
47
46
45
44
43
42
41
40
-60
-20
Fig 9. Maximum Drain Current vs.
Case Temperature
60
100
140
180
Fig 10. Drain-to-Source Breakdown Voltage
0.6
EAS , Single Pulse Avalanche Energy (mJ)
500
VDS= 0V to 32V
0.5
0.4
Energy (μJ)
20
T J , Temperature ( °C )
T C , Case Temperature (°C)
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
35
40
45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
50
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
25
1
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© 2013 International Rectifier
ID
12A
23A
BOTTOM 70A
450
TOP
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
May 08 2013
AUIRFS/SL8403
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart = 25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
120
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 70A
80
40
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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© 2013 International Rectifier
May 08 2013
4.5
8
ID = 70A
VGS(th) , Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFS/SL8403
6
T J = 125°C
4
2
T J = 25°C
3.5
2.5
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.5
0.5
0
2
4
6
8
10
12
14
16
18
-75
20
25
Fig 16. On-Resistance vs. Gate Voltage
175
225
70
4
TJ = 25°C
TJ = 125°C
IF = 46A
V R = 34V
60
TJ = 25°C
TJ = 125°C
50
QRR (nC)
5
IF = 46A
V R = 34V
3
2
40
30
20
1
10
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
60
5
4
IF = 70A
V R = 34V
50
IF = 70A
V R = 34V
TJ = 25°C
TJ = 125°C
40
TJ = 25°C
TJ = 125°C
3
QRR (nC)
IRRM (A)
125
Fig 17. Threshold Voltage vs. Temperature
6
2
30
20
1
10
0
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
75
T J , Temperature ( °C )
VGS, Gate -to -Source Voltage (V)
IRRM (A)
-25
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© 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
May 08 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFS/SL8403
20.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
15.0
10.0
5.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
7
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
Driver Gate Drive
D.U.T
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24a. Unclamped Inductive Test Circuit
RD
V DS
Fig 24b. Unclamped Inductive Waveforms
VDS
90%
V GS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
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© 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
May 08 2013
AUIRFS/SL8403
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRFS8403
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUIRFSL8403
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive level.
2
3L-TO-262-PAK
Machine Model
ESD
N/A
Class M4 (+/- 600)
AEC-Q101-002
Human Body Model
Charged Device Model
RoHS Compliant
MSL1
3L-D PAK
Moisture Sensitivity Level
††
Class H1C (+/- 2000)
AEC-Q101-001
Class C5 (+/- 2000)
AEC-Q101-005
††
††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
12
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
IMPORTANT NOTICE
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at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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www.irf.com
© 2013 International Rectifier
May 08 2013
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