AUTOMOTIVE GRADE
AUIRFS8407-7P
Features
HEXFET® Power MOSFET
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
Description
S
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
1.0mΩ
1.3mΩ
306A
ID (Package Limited)
240A
D
S
Applications
G
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
Base part number
AUIRFS8407-7P
S
S
S
S
D2Pak 7 Pin
Package Type
D2Pak-7PIN
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Orderable Part Number
Quantity
50
800
800
AUIRFS8407-7P
AUIRFS8407-7TRL
AUIRFS8407-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, V GS @ 10V (Silicon Limited)
306
ID @ TC = 100°C
Continuous Drain Current, V GS @ 10V (Silicon Limited)
216
ID @ TC = 25°C
Continuous Drain Current, V GS @ 10V (Package Limited)
240
IDM
Pulsed Drain Current
1040
PD @TC = 25°C
Maximum Power Dissipation
231
W
Linear Derating Factor
1.5
Gate-to-Source Voltage
Single Pulse Avalanche Energy
± 20
W/°C
V
VGS
EAS (Thermally limited)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
EAS (tested)
Soldering Temperature, for 10 seconds (1.6mm from case)
A
344
508
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
-55 to + 175
°C
300
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS8407-7P
Thermal Resistance
Typ.
Max.
Units
R θJC
Symbol
Junction-to-Case
Parameter
–––
0.65
°C/W
R θJA
Junction-to-Ambient (PCB Mount)
–––
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min. Typ. Max. Units
40
–––
–––
2.2
–––
–––
–––
–––
–––
––– –––
0.035 –––
1.0
1.3
–––
3.9
–––
1.0
––– 150
––– 100
––– -100
2.2
–––
V
V/°C
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 100A
VDS = VGS, ID = 150μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
122
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
41
51
99
18
62
78
51
7437
1097
748
1314
1735
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
ID = 30A
R G = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
IS
Parameter
VSD
dv/dt
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 100A, di/dt ≤ 1288A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
www.irf.com © 2013 International Rectifier
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 306
showing the
A
G
integral reverse
––– ––– 1040
S
p-n junction diode.
–––
1.0
1.3
V TJ = 25°C, IS = 100A, VGS = 0V
–––
3.5
––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
–––
37
–––
TJ = 25°C
VR = 34V,
ns
–––
38
–––
TJ = 125°C
IF = 100A
di/dt = 100A/μs
–––
34
–––
TJ = 25°C
nC
–––
36
–––
TJ = 125°C
–––
1.8
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
April 30, 2013
AUIRFS8407-7P
10000
10000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1000
100
5.0V
10
≤60μs PULSE WIDTH
BOTTOM
100
5.0V
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
10000
1000
100
TJ = 175°C
T J = 25°C
10
VDS = 10V
≤60μs PULSE WIDTH
1.0
ID = 100A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2
3
4
5
6
7
8
9
Fig 3. Typical Transfer Characteristics
100000
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
10000
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Coss
Crss
1000
100
ID= 100A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
www.irf.com © 2013 International Rectifier
0
20 40 60 80 100 120 140 160 180 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRFS8407-7P
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10000
1000
T J = 175°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100
Limited by
package
10
1
0.1
VSD, Source-to-Drain Voltage (V)
300
250
200
150
100
50
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Limited By Package
50
10
100
VDS, Drain-toSource Voltage (V)
350
25
1
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
ID, Drain Current (A)
DC
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
49
Id = 1.0mA
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1.0
EAS , Single Pulse Avalanche Energy (mJ)
1400
0.9
ID
TOP
22A
46A
BOTTOM 100A
1200
0.8
0.7
Energy (μJ)
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
1000
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-0.1
800
600
400
200
0
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
100μsec
1msec
www.irf.com © 2013 International Rectifier
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013
AUIRFS8407-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
350
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
300
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = ΔT/ ZthJC
ΔT/ [1.3·BV·Zth]
Iav = 2Δ
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
www.irf.com © 2013 International Rectifier
April 30, 2013
4.0
5.0
ID = 100A
VGS(th) , Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (m Ω)
AUIRFS8407-7P
3.0
TJ = 125°C
2.0
T J = 25°C
1.0
4.0
3.0
ID = 150μA
ID = 1.0mA
2.0
ID = 1.0A
1.0
4
6
8
10
12
14
16
18
20
-75 -50 -25
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
300
8
TJ = 25°C
TJ = 125°C
QRR (nC)
10
IF = 60A
V R = 34V
6
250
IF = 60A
V R = 34V
200
TJ = 25°C
TJ = 125°C
150
4
100
2
50
0
0
0
200
400
600
800
0
1000
200
600
800
1000
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
300
12
10
IF = 100A
V R = 34V
8
TJ = 25°C
TJ = 125°C
QRR (nC)
IRRM (A)
400
diF /dt (A/μs)
diF /dt (A/μs)
6
250
IF = 100A
V R = 34V
200
TJ = 25°C
TJ = 125°C
150
4
100
2
50
0
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6
25 50 75 100 125 150 175
Fig 17. Threshold Voltage vs. Temperature
12
IRRM (A)
0
T J , Temperature ( °C )
www.irf.com © 2013 International Rectifier
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 30, 2013
RDS(on), Drain-to -Source On Resistance ( mΩ)
AUIRFS8407-7P
10.0
VGS = 6.0V
VGS = 7.0V
8.0
VGS = 8.0V
VGS =10V
6.0
4.0
2.0
0.0
0
200
400
600
800
1000
1200
ID, Drain Current (A)
Fig 22. Typical On-Resistance vs. Drain Current
7
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS8407-7P
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test
Circuit
R
D
VDS
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 μs
Duty Factor ≤ 0.1 %
td(on)
Fig 25a. Switching Time Test Circuit
tr
t d(off)
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
8
www.irf.com © 2013 International Rectifier
Qgs1 Qgs2
Qgd
Qgodr
Fig 26b. Gate Charge Waveform
April 30, 2013
AUIRFS8407-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUFS8407-7P
YWWA
IR Logo
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS8407-7P
D2Pak - 7 Pin Tape and Reel
10
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS8407-7P
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
2
MSL1
D PAK 7 Pin
ESD
Machine Model
Class M3 (+/- 400V)
AEC-Q101-002
Human Body Model
Class H2 (+/- 4000V)
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
AEC-Q101-005
RoHS Compliant
†
††
††
††
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
11
www.irf.com © 2013 International Rectifier
April 30, 2013
AUIRFS8407-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of
third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
www.irf.com © 2013 International Rectifier
April 30, 2013
工商网监
湘ICP备2023018690号
