AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
AUIRLS3034
VDSS
40V
RDS(on) typ.
1.4mΩ
max.
1.7mΩ
ID (Silicon Limited)
343A
ID (Package Limited) 195A
D
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
c
G
S
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base Part Number
Package Type
AUIRLS3034
D2-Pak
S
G
D2Pak
AUIRLS3034
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Tape and Reel Right
800
Orderable Part Number
AUIRLS3034
AUIRLS3034TRL
AUIRLS3034TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
Max.
343
243
195
1372
375
2.5
±20
255
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
d
f
d
e
A
W
See Fig. 14, 15, 22a, 22b,
4.6
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
dv/dt
TJ
TSTG
Units
c
c
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
W/°C
V
mJ
A
mJ
V/ns
-55 to + 175
°C
300
x
x
10lbf in (1.1N m)
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kl
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Typ.
Max.
Units
–––
–––
0.4
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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AUIRLS3034
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
RG(int)
IDSS
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40
–––
–––
–––
1.0
286
–––
–––
–––
–––
–––
–––
0.04
1.4
1.6
–––
–––
2.1
–––
–––
–––
–––
Conditions
–––
V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 5mA
1.7
VGS = 10V, ID = 195A
mΩ
2.0
VGS = 4.5V, ID = 172A
2.5
V VDS = VGS, ID = 250μA
–––
S VDS = 10V, ID = 195A
–––
Ω
20
VDS = 40V, VGS = 0V
μA
250
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
100
nA
-100
VGS = -20V
g
g
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
i
h
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
d
––– 108 162
–––
29
–––
–––
54
–––
–––
54
–––
–––
65
–––
––– 827 –––
–––
97
–––
––– 355 –––
––– 10315 –––
––– 1980 –––
––– 935 –––
––– 2378 –––
––– 2986 –––
Conditions
ID = 185A
VDS = 20V
nC
VGS = 4.5V
ID = 185A, VDS =0V, VGS = 4.5V
VDD = 26V
ID = 195A
ns
RG = 2.1Ω
VGS = 4.5V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
g
g
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.013mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 195A, di/dt ≤ 841A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
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Min. Typ. Max. Units
–––
–––
–––
–––
343
c
1372
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
S
p-n junction diode.
––– –––
1.3
V TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
VR = 34V,
–––
39
–––
ns
TJ = 125°C
IF = 195A
–––
41
–––
di/dt = 100A/μs
TJ = 25°C
–––
39
–––
nC
TJ = 125°C
–––
46
–––
–––
1.7
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to applocation note # AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
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AUIRLS3034
100000
100000
TOP
ID, Drain-to-Source Current (A)
10000
BOTTOM
1000
TOP
≤60μs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
10000
100
10
BOTTOM
≤60μs PULSE WIDTH
Tj = 175°C
1000
100
2.5V
2.5V
10
1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
10000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 25V
≤60μs PULSE WIDTH
ID = 195A
VGS = 10V
1.5
1.0
0.5
0.1
1
2
3
4
5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Ciss
10000
C oss = C ds + C gd
Coss
Crss
1000
5.0
ID= 185A
4.5
VGS, Gate-to-Source Voltage (V)
100000
C, Capacitance (pF)
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
VDS= 32V
VDS= 20V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRLS3034
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10000
1000
T J = 175°C
100
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
1msec
LIMITED BY PACKAGE
10msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1.0
0.0
0.5
1.0
1.5
2.0
0.1
2.5
Limited By Package
ID, Drain Current (A)
250
200
150
100
50
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
350
25
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
2.5
EAS , Single Pulse Avalanche Energy (mJ)
1200
ID
38.9A
65.3A
BOTTOM 195A
TOP
1000
2.0
Energy (μJ)
100
50
T C , Case Temperature (°C)
1.5
1.0
0.5
0.0
800
600
400
200
0
0
5
10
15
20
25
30
35
40
45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
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25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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AUIRLS3034
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
R1
R1
0.05
τJ
0.02
0.01
0.01
τJ
τ1
1E-005
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R2
R2
0.0001
τ4
τ4
0.02477
0.08004
τi (sec)
0.000025
0.000077
0.19057
0.001656
0.10481
0.008408
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
300
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 195A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5
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AUIRLS3034
14
IF = 78A
V R = 34V
12
2.5
TJ = 25°C
TJ = 125°C
10
2.0
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
3.0
1.5
ID = 250μA
1.0
8
6
ID = 1.0mA
4
ID = 1.0A
0.5
2
0.0
-75 -50 -25
0
0
25 50 75 100 125 150 175
0
100
T J , Temperature ( °C )
300
400
500
diF /dt (A/μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
400
14
IF = 78A
VR = 34V
IF = 117A
V R = 34V
12
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
300
QRR (nC)
10
IRRM (A)
200
8
6
4
200
100
2
0
0
0
100
200
300
400
0
500
100
200
300
400
500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
400
IF = 117A
VR = 34V
TJ = 25°C
TJ = 125°C
QRR (nC)
300
200
100
0
0
100
200
300
400
500
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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AUIRLS3034
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
7
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Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRLS3034
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRLS3034
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRLS3034
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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AUIRLS3034
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
D2Pak
MSL1
Class M4 (+/- 800V)†††
AEC-Q101-002
Human Body Model
ESD
Class H3A (+/- 6000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
10
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AUIRLS3034
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all
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IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
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any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any
such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications
intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or
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International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses,
and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
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to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR
products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are
solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR
as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use
any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
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www.irf.com © 2014 International Rectifier
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April 09, 2014
AUIRLS3034
Revision History
Date
3/20/2014
4/9/2014
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Comments
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Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
Updated package outline and part marking on page 8.
Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.
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April 09, 2014
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