BFR460L3E6327

BFR460L3 Low profile silicon NPN RF bipolar transistor Product description The BFR460L3 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use. Feature list • • • • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 5 mA High gain Gms = 16 dB at 1.8 GHz, 3 V, 20 mA OIP3 = 27 dBm at 1.8 GHz, 3 V, 20 mA High ESD performance, typical value 1.5 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Amplifier for remote keyless entry (RKE) Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR460L3 / BFR460L3E6327XTMA1 TSLP-3-1 1=B AB 15000 2=E 3=C Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Package information TSLP-3-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Datasheet 2 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.5 4.2 TA = -55 °C, open base Collector emitter voltage VCES 15 E-B short circuited Collector base voltage VCBO 15 Open emitter Emitter base voltage VEBO 1.5 Open collector Base current IB 5 Collector current IC 50 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 200 mW TS ≤ 108 °C 150 °C -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point Values RthJS Min. Typ. Max. – 210 – Unit Note or test condition K/W – 240 P tot mW 160 120 80 40 0 0 15 30 45 60 75 90 105 120 °C 150 TS Figure 1 Datasheet Total power dissipation Ptot = f(Ts) 4 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25°C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 4.5 5.8 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – – 10 2) μA VCE = 15 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 100 2) nA VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 1 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 90 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25°C Parameter Symbol 120 μA 160 Values Min. Typ. Max. VCE = 3 V, IC = 20 mA, pulse measured Unit Note or test condition Transition frequency fT 16 22 – GHz VCE = 3 V, IC = 30 mA, f = 1 GHz Collector base capacitance CCB – 0.28 0.45 pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.14 – Emitter base capacitance CEB 0.55 2 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C. 3 VC VB Bias-T Out RF-Out Bias-T RFIn In GND 1 2 Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin 1.1 Linearity • 3rd order intercept point at output • 1 dB compression point at output OIP3 OP1dB 27 11.5 Table 7 – Typ. Symbol Max. – dB IC = 20 mA IC = 5 mA dBm Values Min. Power gain • Maximum power gain • Transducer gain Gma |S21|2 Noise figure • Minimum noise figure NFmin Datasheet Note or test condition ZS = ZL = 50 Ω, IC = 20 mA AC characteristics, VCE = 3 V, f = 3 GHz Parameter Note: 16 14 Unit – Typ. 11 10 1.35 Unit Note or test condition Max. – dB IC = 20 mA IC = 5 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 6 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic AC diagrams 26 GHz 2 to 4 V 1V 22 20 fT 18 16 14 12 10 8 6 4 2 0 5 10 15 20 25 30 35 mA 45 IC Figure 3 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 0.8 pF Ccb 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 V 14 VCB Figure 4 Datasheet Collector base capacitance CCB = f(VCB), f = 1 MHz 7 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Electrical characteristics 50 dB 40 G 35 30 Gms 25 20 15 |S21|² Gma 10 5 0 0 1 2 3 GHz 4 6 f Figure 5 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 20 mA 24 0.9 dB 20 G 18 16 1.8 14 2.4 12 3 10 4 5 8 6 6 4 0 5 10 15 20 25 30 mA 40 IC Figure 6 Datasheet Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 8 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Electrical characteristics 24 dB 0.9 20 18 1.8 G 16 14 2.4 12 3 10 4 8 5 6 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE Figure 7 Note: Datasheet Maximum power gain Gmax = f(VCE), IC = 20 mA, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 9 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Package information TSLP-3-1 4 Package information TSLP-3-1 Figure 8 Package outline Figure 9 Foot print Figure 10 Marking layout example Figure 11 Tape information Note: Datasheet See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages . The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters. 10 Revision 2.0 2019-01-25 BFR460L3 Low profile silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 11 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-csm1525442426044 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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