BFR460L3
Low profile silicon NPN RF bipolar transistor
Product description
The BFR460L3 is a low noise device based on a grounded emitter (SIEGET™) that is part of
Infineon’s established fourth generation RF bipolar transistor family. Its transition
frequency fT of 22 GHz, low current and low voltage characteristics make the device
suitable for amplifiers. It remains cost competitive without compromising on ease of
use.
Feature list
•
•
•
•
Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 5 mA
High gain Gms = 16 dB at 1.8 GHz, 3 V, 20 mA
OIP3 = 27 dBm at 1.8 GHz, 3 V, 20 mA
High ESD performance, typical value 1.5 kV (HBM)
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
•
Amplifier for remote keyless entry (RKE)
Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
LNAs for sub-1 GHz ISM band applications
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BFR460L3 / BFR460L3E6327XTMA1
TSLP-3-1
1=B
AB
15000
2=E
3=C
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 2.0
2019-01-25
BFR460L3
Low profile silicon NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
3.3
3.4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Package information TSLP-3-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Datasheet
2
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
VCEO
–
Unit
Note or test condition
V
Open base
Max.
4.5
4.2
TA = -55 °C, open base
Collector emitter voltage
VCES
15
E-B short circuited
Collector base voltage
VCBO
15
Open emitter
Emitter base voltage
VEBO
1.5
Open collector
Base current
IB
5
Collector current
IC
50
Total power dissipation 1)
Ptot
Junction temperature
TJ
Storage temperature
TStg
mA
–
200
mW
TS ≤ 108 °C
150
°C
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Junction - soldering point
Values
RthJS
Min.
Typ.
Max.
–
210
–
Unit
Note or test condition
K/W
–
240
P tot
mW
160
120
80
40
0
0
15
30
45
60
75
90 105 120 °C
150
TS
Figure 1
Datasheet
Total power dissipation Ptot = f(Ts)
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25°C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Collector emitter breakdown voltage
V(BR)CEO
4.5
5.8
–
V
IC = 1 mA, IB = 0,
open base
Collector emitter leakage current
ICES
–
–
10 2)
μA
VCE = 15 V, VBE = 0,
E-B short circuited
Collector base leakage current
ICBO
100 2) nA
VCB = 5 V, IE = 0,
open emitter
Emitter base leakage current
IEBO
1 2)
VEB = 0.5 V, IC = 0,
open collector
DC current gain
hFE
90
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25°C
Parameter
Symbol
120
μA
160
Values
Min.
Typ.
Max.
VCE = 3 V, IC = 20 mA,
pulse measured
Unit
Note or test condition
Transition frequency
fT
16
22
–
GHz
VCE = 3 V, IC = 30 mA,
f = 1 GHz
Collector base capacitance
CCB
–
0.28
0.45
pF
VCB = 3 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance
CCE
0.14
–
Emitter base capacitance
CEB
0.55
2
VCE = 3 V, VBE = 0,
f = 1 MHz,
base grounded
VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
Maximum values not limited by the device but by the short cycle time of the 100% test.
Datasheet
5
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C.
3
VC
VB
Bias-T
Out
RF-Out
Bias-T
RFIn
In
GND
1
2
Figure 2
Testing circuit
Table 6
AC characteristics, VCE = 3 V, f = 1.8 GHz
Parameter
Symbol
Values
Min.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
Noise figure
•
Minimum noise figure
NFmin
1.1
Linearity
•
3rd order intercept point at output
•
1 dB compression point at output
OIP3
OP1dB
27
11.5
Table 7
–
Typ.
Symbol
Max.
–
dB
IC = 20 mA
IC = 5 mA
dBm
Values
Min.
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
Noise figure
• Minimum noise figure
NFmin
Datasheet
Note or test condition
ZS = ZL = 50 Ω, IC = 20 mA
AC characteristics, VCE = 3 V, f = 3 GHz
Parameter
Note:
16
14
Unit
–
Typ.
11
10
1.35
Unit
Note or test condition
Max.
–
dB
IC = 20 mA
IC = 5 mA
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
6
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic AC diagrams
26
GHz
2 to 4 V
1V
22
20
fT
18
16
14
12
10
8
6
4
2
0
5
10
15
20
25
30
35
mA
45
IC
Figure 3
Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter
0.8
pF
Ccb
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
V
14
VCB
Figure 4
Datasheet
Collector base capacitance CCB = f(VCB), f = 1 MHz
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
50
dB
40
G
35
30
Gms
25
20
15
|S21|²
Gma
10
5
0
0
1
2
3
GHz
4
6
f
Figure 5
Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 20 mA
24
0.9
dB
20
G
18
16
1.8
14
2.4
12
3
10
4
5
8
6
6
4
0
5
10
15
20
25
30
mA
40
IC
Figure 6
Datasheet
Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
24
dB
0.9
20
18
1.8
G
16
14
2.4
12
3
10
4
8
5
6
6
4
2
0
0.5
1
1.5
2
2.5
3
3.5
V
4.5
VCE
Figure 7
Note:
Datasheet
Maximum power gain Gmax = f(VCE), IC = 20 mA, f = parameter in GHz
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Package information TSLP-3-1
4
Package information TSLP-3-1
Figure 8
Package outline
Figure 9
Foot print
Figure 10
Marking layout example
Figure 11
Tape information
Note:
Datasheet
See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages .
The marking layout is an example. For the real marking code refer to the device information on the
first page. The number of characters shown in the layout example is not necessarily the real one. The
marking layout can consist of less characters.
10
Revision 2.0
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BFR460L3
Low profile silicon NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
Revision 2.0
2019-01-25
New datasheet layout.
Datasheet
11
Revision 2.0
2019-01-25
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2019-01-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-csm1525442426044
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
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non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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in question please contact your nearest Infineon
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